..............page:14-19+30
..............page:20-24+36
..............page:37-41+68
..............page:54-58+63
ICP-RIE Dry Etching of 4H-SiC Materials in SF6/O2/HBr
Wang Jinze;Yang Xiang;Niu Yingxi;Yang Fei;He Zhi;Liu Shengbei;Yan Wei;Liu Min;Wang Xiaodong;Yang Fuhua;Research Center of Semiconductor Integration Technology;Institute of Semiconductors;Chinese Academy of Science;SiC Power Device Center;Electrical Engineering New Mat and Microelectrical Department;State Grid Smart Grid Research Institute;
..............page:59-63