1671-4776
2014 Issue 5
Research Progresses on GaN-Based Schottky Barrier Diode Power Devices
Li Di;Jia Lifang;He Zhi;Fan Zhongchao;Wang Xiaodong;Yang Fuhua;Engineering Research Center for Semiconductor Integrated Technology Institute of Semiconductors;Chinese Academy of Science;
Li Di;Jia Lifang;He Zhi;Fan Zhongchao;Wang Xiaodong;Yang Fuhua;Engineering Research Center for Semiconductor Integrated Technology Institute of Semiconductors;Chinese Academy of Science;
..............page:277-285+296
Numerical Simulation of Quantum Dot Superluminescent Diodes with the Two-Section Structure
Chen Hongmei;An Qi;Wu Yanhua;Wang Feifei;Hu Fajie;Li Xinkun;Jin Peng;Wu Ju;Wang Zhanguo;Key Laboratory of Semiconductor Materials Science Institute of Semiconductors;Chinese Academy of Sciences;Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices Institute of Semiconductors;Chinese Academy of Sciences;
Chen Hongmei;An Qi;Wu Yanhua;Wang Feifei;Hu Fajie;Li Xinkun;Jin Peng;Wu Ju;Wang Zhanguo;Key Laboratory of Semiconductor Materials Science Institute of Semiconductors;Chinese Academy of Sciences;Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices Institute of Semiconductors;Chinese Academy of Sciences;
..............page:286-296
Micro Actuation Performance of the Magnetic Fluid
Guo Yan;Liu Tonggang;Wu Jian;College of Mechanical and Electrical Engineering;China University of Mining and Technology;
Guo Yan;Liu Tonggang;Wu Jian;College of Mechanical and Electrical Engineering;China University of Mining and Technology;
..............page:297-301
Shock Resistance Design of a High-Performance MEMS Tuning-Fork Gyroscope
Si Chaowei;Han Guowei;Ning Jin;Zhao Yongmei;Yang Fuhua;Department of Electronic Engineering;Tsinghua University;Institute of Semiconductors Chinese Academy of Sciences;State Key Laboratories of Transducer Technology Chinese Academy of Sciences;
Si Chaowei;Han Guowei;Ning Jin;Zhao Yongmei;Yang Fuhua;Department of Electronic Engineering;Tsinghua University;Institute of Semiconductors Chinese Academy of Sciences;State Key Laboratories of Transducer Technology Chinese Academy of Sciences;
..............page:302-307
Streaming Potential and Electrokinetic Effect of the Pressure-Driven Flow in the Circular Microchannels
Liu Ying;Wang Lupeng;Tan Dekun;School of Mechanical and Electrical Engineering;Nanchang University;School of Information Engineering Nanchang Institute of Technology;
Liu Ying;Wang Lupeng;Tan Dekun;School of Mechanical and Electrical Engineering;Nanchang University;School of Information Engineering Nanchang Institute of Technology;
..............page:308-314
Research Development of the Plasma Etching for Phase Change Materials
Li Juntao;Liu Bo;Song Zhitang;Feng Gaoming;Zhu Nanfei;Ren Jiadong;Feng Songlin;State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Micro-System and Information Technology Chinese Academy of Sciences;University of the Chinese Academy of Sciences;Semiconductor Manufacturing International Corporation;
Li Juntao;Liu Bo;Song Zhitang;Feng Gaoming;Zhu Nanfei;Ren Jiadong;Feng Songlin;State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Micro-System and Information Technology Chinese Academy of Sciences;University of the Chinese Academy of Sciences;Semiconductor Manufacturing International Corporation;
..............page:315-323
Preparation,Structure and Photoluminescence Properties of CdS Thin Films
Wang Junchao;Zhu Yanyan;Shanghai University of Electric Power;
Wang Junchao;Zhu Yanyan;Shanghai University of Electric Power;
..............page:324-327
A Novel Self-Aligned Source/Drain Contact Technology
Zhang Qin;Hong Peizhen;Cui Hushan;Lu Yihong;Jia Cheng;Zhong Huicai;Sciences Integrated Circuit Advanced Process Center Institute of Microelectronics;Chinese Academy of Sciences;
Zhang Qin;Hong Peizhen;Cui Hushan;Lu Yihong;Jia Cheng;Zhong Huicai;Sciences Integrated Circuit Advanced Process Center Institute of Microelectronics;Chinese Academy of Sciences;
..............page:328-332
Effects of Each Component Volume Fraction on the Storage Time of the Alkaline Slurry
Chen Guodong;Liu Yuling;Jiang Mengting;Liu Weijuan;Yuan Haobo;Institute ofMicroelectronics;Hebei University of Technology;
Chen Guodong;Liu Yuling;Jiang Mengting;Liu Weijuan;Yuan Haobo;Institute ofMicroelectronics;Hebei University of Technology;
..............page:333-336+340
Effects of Process Parameters in the Chemical Mechanical Polishing on the Removal Rate of TiO2 Thin Films
Li Yanlei;Duan Bo;Zhou Jianwei;Yang Ruixia;Niu Xinhuan;College of Information Engineering;Hebei University of Technology;Institute of Microelectronics;Hebei University of Technology;
Li Yanlei;Duan Bo;Zhou Jianwei;Yang Ruixia;Niu Xinhuan;College of Information Engineering;Hebei University of Technology;Institute of Microelectronics;Hebei University of Technology;
..............page:337-340
..............page:341-342
..............page:342
..............page:343-344