1671-4776
2009 Issue 4
..............page:193-200,253
Reserch on the Etching Selectivity of GaN/SiO2
Xiao Guohua;Fu Tieli;Zheng Juechen;Tang Lanxiang
Xiao Guohua;Fu Tieli;Zheng Juechen;Tang Lanxiang
..............page:250-253
Measurement System of Precision Stage for E-Beam Aligner
Yan Wei;Hu Song;Yang Yong;Zhou Shaolin;Jiang Wenbo;Li Yanli;Qiao Junxian
Yan Wei;Hu Song;Yang Yong;Zhou Shaolin;Jiang Wenbo;Li Yanli;Qiao Junxian
..............page:244-249
Review on Electroosmotic Pumps
Bai Zhuchuan;Gao Yang;Liu Tingting;Chen Yingduan
Bai Zhuchuan;Gao Yang;Liu Tingting;Chen Yingduan
..............page:236-243
Three-Axis Micro-Force Sensor Based on a Mechanical Probe
Lin Qijing;Zhao Yulong;Jiang Zhuangde;Wang Xinyao;Wang Weizhong
Lin Qijing;Zhao Yulong;Jiang Zhuangde;Wang Xinyao;Wang Weizhong
..............page:231-235
Effects of Geometry of Piezoelectric Actuator on Coupling Characteristics of Micro Nebulizer
Yang Mingwei;Zhou Zhaoying
Yang Mingwei;Zhou Zhaoying
..............page:226-230
Influence of Channel Strain on the Electronic Property of GaAs PHEMT Materials
Bu Xiazheng;Wu Yibin;Shang Yaohui;Niu Chenliang;Zhao Hui;Cui Qi
Bu Xiazheng;Wu Yibin;Shang Yaohui;Niu Chenliang;Zhao Hui;Cui Qi
..............page:221-225,230
Comparation of13C NMR Spectrum Characters of C20 Fullerene Isomers
Zhang Xiumei;Wang Liguang;Huo Xinxia;Qi Wenhui
Zhang Xiumei;Wang Liguang;Huo Xinxia;Qi Wenhui
..............page:217-220
Preparation and Photoluminescence Properties of Cr Doped SiC Films
Zhu Xiaojian;Hong Bo;Jin Chenggang;Wu Xuemei
Zhu Xiaojian;Hong Bo;Jin Chenggang;Wu Xuemei
..............page:213-216
1.06 μm High Power CW Semiconductor Lasers
Ren Yongxiao;Chen Hongtai;Zhang Shizu;Yang Hongwei;Hua Jizhen
Ren Yongxiao;Chen Hongtai;Zhang Shizu;Yang Hongwei;Hua Jizhen
..............page:209-212
Quantum Effects
Characterizing in Nanoelectronic Devices and Structures by Means of Shot Noise
Chen Hua
Chen Hua
..............page:201-208