1000-3819
2015 Issue 2
Optimization Research of Nano FinFET′s Fin Shape
YU Zhihao;CHANG Sheng;WANG Hao;HE Jin;HUANG Qijun;School of Physics and Technology;Wuhan University;
YU Zhihao;CHANG Sheng;WANG Hao;HE Jin;HUANG Qijun;School of Physics and Technology;Wuhan University;
..............page:105-108
Two-dimensional Analytical Model of Fully-depleted Stepped Channel Doping Cylindrical Gate-all-around MOSFET
ZHOU Airong;WANG Dong;GAO Shan;CHEN Junning;Department of Electronic and Information Engineering;Anhui University;
ZHOU Airong;WANG Dong;GAO Shan;CHEN Junning;Department of Electronic and Information Engineering;Anhui University;
..............page:109-114
Analog of High-performance Double-gate Multiple-layer ZnO Thin-film Transistors
WANG Zhao;YAO Yang;ZHONG Chuanjie;School of Internet of Things;Jiangnan University;
WANG Zhao;YAO Yang;ZHONG Chuanjie;School of Internet of Things;Jiangnan University;
..............page:115-119
Assembly of CuO Nanowire RRAM and Its Resistive Switching Characteristics
YANG Bin;TANG Haitao;YANG Zhao;LIU An;LIU Hongwu;Department of Electronic Engineering;College of Information Science and Technology;Jinan University;
YANG Bin;TANG Haitao;YANG Zhao;LIU An;LIU Hongwu;Department of Electronic Engineering;College of Information Science and Technology;Jinan University;
..............page:120-123
An Analytical Model for Small Size MOSFETs Inversion Layer Using Potential Well Approximation
XU Huoxi;LAN Zhigao;LUO Chunya;Department of Electronic Information;Huanggang Normal University;Department of Optics & Electronics;Huazhong University of Science and Technology;
XU Huoxi;LAN Zhigao;LUO Chunya;Department of Electronic Information;Huanggang Normal University;Department of Optics & Electronics;Huazhong University of Science and Technology;
..............page:124-128
Charging Dynamic Characteristics of the Dielectric Sample under Electron Beam Irradiation
WANG Chunhua;Xi′an Aeronautical University;
WANG Chunhua;Xi′an Aeronautical University;
..............page:129-134+155
Analysis and Application of EVM on the Microwave Transmitter
LIU Wei;PAN Bei;GE Peihu;Nanjing Electronic Devices Institute;Militery Deputy Office of Air Force in Jiangsu Area;
LIU Wei;PAN Bei;GE Peihu;Nanjing Electronic Devices Institute;Militery Deputy Office of Air Force in Jiangsu Area;
..............page:135-138
The Study of the Linearity of SiGe HBT
ZHANG Guiheng;ZHANG Wei;FU Jun;WANG Yudong;School of Electronic Information Engineering;Tianjin University;Institute of Microelectronics;Tsinghua University;
ZHANG Guiheng;ZHANG Wei;FU Jun;WANG Yudong;School of Electronic Information Engineering;Tianjin University;Institute of Microelectronics;Tsinghua University;
..............page:139-144
A 0.7~4.0GHz SOI CMOS Active Down-mixer for Digital Phased-array Radar T/R Module
CHEN Liang;CHEN Xinyu;ZHANG Youtao;YANG Lei;Nanjing Guobo Electronics Co.Ltd;Nanjing Electronic Devices Institute;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;
CHEN Liang;CHEN Xinyu;ZHANG Youtao;YANG Lei;Nanjing Guobo Electronics Co.Ltd;Nanjing Electronic Devices Institute;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;
..............page:145-149+160
A Low Phase Noise and Wide-band VCO for UHF RFID Reader
ZHANG Qifan;WANG Jianwei;SHI Chunqi;ZHANG Runxi;IMCS;East China Normal University;
ZHANG Qifan;WANG Jianwei;SHI Chunqi;ZHANG Runxi;IMCS;East China Normal University;
..............page:150-155
Design of a Miniaturized LTCC Low-pass Filter with Wide Stop-band Suppression
ZHENG Kun;WANG Ziliang;DAI Lei;YAN Rong;XU Li;CHEN Yuhui;Nanjing Electronic Devices Institute;Science and Technology on Monolithic Integrated Circuit and Modules Laboratory;
ZHENG Kun;WANG Ziliang;DAI Lei;YAN Rong;XU Li;CHEN Yuhui;Nanjing Electronic Devices Institute;Science and Technology on Monolithic Integrated Circuit and Modules Laboratory;
..............page:156-160
Design of a Bandpass Filter Based on the T-resonator
LU Jianhua;TANG Zongxi;School of Electronic Engineering;University of Electronic Science and Technology of China;
LU Jianhua;TANG Zongxi;School of Electronic Engineering;University of Electronic Science and Technology of China;
..............page:161-163+206
Effect of Strain on the Photoelectric Properties of Cr-Se Co-doped Monolayer MoS2
FAN Menghui;CAI Xunming;CEN Weifu;LUO Zuifen;YAN Wanjun;XIE Quan;Polytechnic College;Guizhou Minzu University;College of Electronics and Information Engineering;Guizhou University;
FAN Menghui;CAI Xunming;CEN Weifu;LUO Zuifen;YAN Wanjun;XIE Quan;Polytechnic College;Guizhou Minzu University;College of Electronics and Information Engineering;Guizhou University;
..............page:164-170
The Design and Optimization for Deep Submicron SOC Power Mesh
WANG Chenglong;ZHANG Wanrong;LIN Pingfen;WAN Peiyuan;ZHU Xuefei;College of Electronic Information & Control Engineering;Beijing University of Technology;
WANG Chenglong;ZHANG Wanrong;LIN Pingfen;WAN Peiyuan;ZHU Xuefei;College of Electronic Information & Control Engineering;Beijing University of Technology;
..............page:171-175
Design of a Quick Response and High Performance LDO
JIN Jiawei;WU Yu;WAN Peiyuan;LIN Pingfen;School of Electronic Information and Control Engineering;Beijing University of Technology;
JIN Jiawei;WU Yu;WAN Peiyuan;LIN Pingfen;School of Electronic Information and Control Engineering;Beijing University of Technology;
..............page:176-179
Effects of Process Parameters on Breakdown Voltage of Low Capacitance TVS Devices
CHEN Tian;GU Jian;ZHENG E;BCD Semiconductor Manufacturing Ltd;
CHEN Tian;GU Jian;ZHENG E;BCD Semiconductor Manufacturing Ltd;
..............page:180-186
Simulation of Total Ionizing Dose on NMOS Transistors
YANG Bianxia;LI Ping;LIU Yang;State Key Lab of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
YANG Bianxia;LI Ping;LIU Yang;State Key Lab of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:187-190+201
Effects of Electron Cyclotron Resonance Nitrogen Plasma Post-oxidation Annealing on the TDDB Characteristics of 4H-SiC MOS Capacitors
TANG Bin;LI Wenbo;LIU Bingbing;LIU Daosen;QIN Fuwen;WANG Dejun;Faculty of Electronic Information and Electrical Engineering School of Electronic Science and Technology;Dalian University of Technology;State Key Laboratory of Materials Modification by Laser;Ion and Electron Beams;Dalian University of Technology;
TANG Bin;LI Wenbo;LIU Bingbing;LIU Daosen;QIN Fuwen;WANG Dejun;Faculty of Electronic Information and Electrical Engineering School of Electronic Science and Technology;Dalian University of Technology;State Key Laboratory of Materials Modification by Laser;Ion and Electron Beams;Dalian University of Technology;
..............page:191-196+201
Improvement of Ohmic Contact Characteristics on GaAs HEMT/PHEMT by Composite Cap Layer Design
HUANG Nianning;HAN Kefeng;GAO Xiqing;ZOU Penghui;GAO Jianfeng;Nanjing Electronic Devices Institute;
HUANG Nianning;HAN Kefeng;GAO Xiqing;ZOU Penghui;GAO Jianfeng;Nanjing Electronic Devices Institute;
..............page:197-201
The Influences of Solvent Vapor Pressure on the PVP Films by Solution Process
LIU Quanshui;HAN Xianhu;QIAN Feng;ZHONG Chuanjie;College of Internet of Things;Jiangnan University;
LIU Quanshui;HAN Xianhu;QIAN Feng;ZHONG Chuanjie;College of Internet of Things;Jiangnan University;
..............page:202-206
SOI CMOS RFICs for Radar T/R Module
CHEN Liang;CHEN Xinyu;ZHANG Youtao;YANG Lei;Guobo Eelectronics Co.;Ltd;Nanjing Electronics Devices Institute;Science and Technology on Monolithic Inter grated Circuits and Modules laboratory;
CHEN Liang;CHEN Xinyu;ZHANG Youtao;YANG Lei;Guobo Eelectronics Co.;Ltd;Nanjing Electronics Devices Institute;Science and Technology on Monolithic Inter grated Circuits and Modules laboratory;
..............page:207