Chinese Journal of Luminescence 2001 Issue z1 Close Coupled Showerhead Reactors for the Growth of Group Ⅲ Nitrides

Close Coupled Showerhead Reactors for the Growth of Group Ⅲ Nitrides
Thrush E J;Considine L;Mullins J T;Saywell V;Bentham F C;Sharma N;Humphreys C J;Kappers M

..............page:103-106

TurboDisc MOCVD Theory and Applications:A Fluid Dynamics Approach
Li S;Ramer J;Walker R C;Fabiano P

..............page:99-102

MOVPE Growth of Ⅲ-N Materials with Large Area (21 × 2") Vertical Rotating Disk Reactors
Ramer J;Parekh R;Ronan B;Loftus C;Gurary A

..............page:95-98

Fabrication and Properties of White Luminescence Conversion LEDs
tang ying jie ; wang yu fang ; yang zhi jian ; zhang guo yi

..............page:91-94

GaN-based Ultraviolet Photodetectors Fabricated by Metalorganic Chemical Vapor Deposition
yang hui ; zhao de gang ; zhang shu ming ; zhu jian jun ; feng zhi hong ; duan li hong ; liu su ying

..............page:87-90

Photoluminescence and Absorption in InGaN Films with InN Segregation
Chen Zhizhong;QIN Zhixin;YANG Zhijian;TONG Yuzhen;DING Xiaomin;ZHANG Guoyi

..............page:38-42

Investigation on Polarity of GaN/Al2O3 Heterostructure Grown by MOVPE
HAN Peide;LIU Xianglin;WANG Xiaohui;Wang Du;Lu Dacheng;WANG Zhanguo

..............page:33-37

Observation of Morphology Development in Initial Growth Stage of GaN
Yuan Hairong;CHEN Zhen;Lu Dacheng;LIU Xianglin;HAN Peide;WANG Xiaohui;Wang Du

..............page:29-32

Effects of GaAs Substrate Nitridation with N2-H2 Plasma on c-GaN Epitaxy Growth by ECR-PEMOCVD
wang san sheng ; gu biao ; xu yin ; qin fu wen ; sui yu ; yang da zhi

..............page:24-28

Preparation and Luminescence of Blue Light Conversion Material YAG: Ce
Yao Guangqing;DUAN Jiefei;REN Min;YU Haidong;Lin Jianhua

..............page:21-23

Effect of TMGa Molar Flow Rate of GaN Buffer on Subsequent GaN Epilayers and the Buffer Growth ModelCHEN Zhen, YUAN Hai-rong, LU Da-cheng, WANG Xiao-hui,
chen zhen ; yuan hai rong ; lu da cheng ; wang xiao zuo ; liu xiang lin ; han pei de ; wang du ; wang zhan guo

..............page:17-20

Thermodynamic Consideration of Nitride Quaternary Grown by MOVPE
Lu Dacheng;DUAN Shukun

..............page:13-16

Increasing Hole Concentration of p-type GaN by Mg Implantation
YANG Zhijian;LONG Tao;ZHANG Guoyi

..............page:10-12

Residual Strain Control in AIN and GaN Epilayer Grown on 6H-SiC Substrate Using (GaN/AIN) Multi Buffer Layers by Low-pressure MOVPE
Ishihara Y;Kawanishi H;Takano T;Horie M

..............page:5-9

Si-doped Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
WU Jun;ZHAO F H;Ito Y;Yoshida S;Onabe K;Shiraki Y

..............page:1-4

AlGaInN High Power Lasers Grown on ELO-GaN
Ikeda M;Uchida S

..............page:83-86

X-ray Analysis of GaN Film Grown by Hydride Vapor Phase Epitaxy
zhou jin ; yang zhi jian ; tang ying jie ; zhang guo yi

..............page:79-82

XPS and AES Investigation of GaN Films Grown by MBE
yuan jin she ; qi ming ; li ai zhen ; xu zhuo ; chen guang de

..............page:75-78

A Modified Dynamical Theory Model of X-ray Diffraction for GaN
guo wen ping ; hao zhi biao ; luo yi

..............page:71-74

Investigation of the Magnetotransport Properties of the Two-dimentional Electron Gas in AlxGa1-xN/GaN Heterostructures
zheng ze wei ; shen bo ; liu jie ; zhou hui mei ; qian yue ; zhang rong ; shi yi ; zheng you ; jiang chun ping ; guo shao ling ; zheng guo zhen ; zuo jun hao ;someya t;arakawa y

..............page:67-70

Piezoelectric Polarization Effect in AlxGa1-xN/GaNHeterostructures through Capacitance-Voltage Method
zhou yu gang ; shen bo ; yu hui qiang ; zhang rong ; liu jie ; zhou hui mei ; shi yi ; zheng you ;someya t;arakawa y

..............page:61-66

Capacitance-Voltage Properties of a Pb(Zro.53Tio.47)O3Ferroelectric Film on AlxGa1-x N/GaN Heterostructure
shen bo ; li wei ping ; zhou yu gang ; bi chao xia ; zhang rong ; zheng ze wei ; liu jie ; zhou hui mei ; shi yi ; liu zhi guo ; zheng you ;someya t;arakawa y

..............page:57-60

Structural Properties of Laterally Overgrown GaN
zhang rong ; gu shu lin ; xiu xiang qian ; lu dian qing ; shen bo ; shi yi ; zheng you ;kuan t s

..............page:53-56

InGaN-based Light-Emitting Diodes and Laser Diodes
Mukai T;Nagahama S;Iwasa N;Senoh M;Matsushita T;Sugimoto Y;Kiyoku H;Kozaki T;Sano M;Matsumura H;Umimoto H;Chocho K

..............page:48-52

InN Segregation in InGaN Layers Grownby Metalorganic Chemical Vapor Deposition
QIN Zhixin;Chen Zhizhong;TONG Yuzhen;LU Shu;ZHANG Guoyi

..............page:43-47