1672-5468
2011 Issue 6
ESD Failure of MOS Device
LAI Zhong-you;XU Qing-ping
LAI Zhong-you;XU Qing-ping
..............page:64-67
..............page:后插1-后插2,9,18,28,38,42,47,52
..............page:53-55
..............page:48-52
..............page:10-18
Reliability Assessment for Zero Failure Data in Weibull Distribution
LU Zu-jian;ZHANG Shi-nian;ZHANG Guo-bin;YI Dang-xiang
LU Zu-jian;ZHANG Shi-nian;ZHANG Guo-bin;YI Dang-xiang
..............page:6-9
Development of Burn-in System for Digital Array Module
HE Hong-ping;ZHANG Wei
HE Hong-ping;ZHANG Wei
..............page:39-42
..............page:56-60
Statistical Analysis of Triple Hybrid Model with Two-parameter Weibull Distribution under the Full Sample Size
XU Xiao-ling;WANG Rong-hua;GU Bei-qing;WANG Yi-fan
XU Xiao-ling;WANG Rong-hua;GU Bei-qing;WANG Yi-fan
..............page:29-38
..............page:23-28
..............page:19-22
Mission Capable Rate Model
DING Ding-hao
DING Ding-hao
..............page:1-5
Calibration of Instant Break Tester
WEI Wu;KAN Fei
WEI Wu;KAN Fei
..............page:43-47
Simulation of Kalman Filtering Based on MATLAB
FENG Gang;LV Mao-ting;QIN Tian
FENG Gang;LV Mao-ting;QIN Tian
..............page:61-63