1674-4926
2016 Issue 9
Photodetectors based on two dimensional materials
Lou Zheng;Liang Zhongzhu;Shen Guozhen;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory of Applied Optics;Changchun Institute of Optics;Fine Mechanics and Physics;Chinese Academy of Sciences;
Lou Zheng;Liang Zhongzhu;Shen Guozhen;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory of Applied Optics;Changchun Institute of Optics;Fine Mechanics and Physics;Chinese Academy of Sciences;
..............page:5-15
Scaling relation of domain competition on(2+1)-dimensional ballistic deposition model with surface diffusion
Kenyu Osada;Hiroyasu Katsuno;Toshiharu Irisawa;Yukio Saito;Department of Physics;Gakushuin University;Computer Centre;Gakushuin University;Department of Physical Science;Ritsumeikan University;Department of Physics;Keio University;
Kenyu Osada;Hiroyasu Katsuno;Toshiharu Irisawa;Yukio Saito;Department of Physics;Gakushuin University;Computer Centre;Gakushuin University;Department of Physical Science;Ritsumeikan University;Department of Physics;Keio University;
..............page:16-21
Thermoelectric properties of Al-doped ZnO: experiment and simulation
S.Jantrasee;P.Moontragoon;S.Pinitsoontorn;Materials Science and Nanotechnology Program;Faculty of Science;Khon Kaen University;Department of Physics;Faculty of Science;Khon Kaen University;
S.Jantrasee;P.Moontragoon;S.Pinitsoontorn;Materials Science and Nanotechnology Program;Faculty of Science;Khon Kaen University;Department of Physics;Faculty of Science;Khon Kaen University;
..............page:22-29
Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling
Ken K.Chin;Zimeng Cheng;Department of Physics and CNBM New Energy Materials Research Center;New Jersey Institute of Technology;
Ken K.Chin;Zimeng Cheng;Department of Physics and CNBM New Energy Materials Research Center;New Jersey Institute of Technology;
..............page:30-36
Magnetopolaron effects on the optical absorptions in a parabolic quantum dot
Chen Shihua;Department of Electrical Engineering;Huzhou Vocational Technology College;
Chen Shihua;Department of Electrical Engineering;Huzhou Vocational Technology College;
..............page:37-40
Steady-state solution growth of microcrystalline silicon on nanocrystalline seed layers on glass
R.Bansen;C.Ehlers;Th.Teubner;T.Boeck;Leibniz Institute for Crystal Growth;
R.Bansen;C.Ehlers;Th.Teubner;T.Boeck;Leibniz Institute for Crystal Growth;
..............page:41-44
Optoelectronic properties and Seebeck coefficient in SnSe thin films
K S Urmila;T A Namitha;J Rajani;R R Philip;B Pradeep;Solid State Physics Laboratory;Department of Physics;Cochin University of Science and Technology;Thin Film Research Laboratory;Department of Physics;Union Christian College;
K S Urmila;T A Namitha;J Rajani;R R Philip;B Pradeep;Solid State Physics Laboratory;Department of Physics;Cochin University of Science and Technology;Thin Film Research Laboratory;Department of Physics;Union Christian College;
..............page:45-50
Bulk heterojunction thin film formation by single and dual feed ultrasonic spray method for application in organic solar cells
D.M.Marathe;H.S.Tarkas;M.S.Mahajan;G.S.Lonkar;S.R.Tak;J.V.Sali;Organic Photovoltaic Laboratory;North Maharashtra University;
D.M.Marathe;H.S.Tarkas;M.S.Mahajan;G.S.Lonkar;S.R.Tak;J.V.Sali;Organic Photovoltaic Laboratory;North Maharashtra University;
..............page:51-54
A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity
Lai Shumei;Mao Danfeng;Huang Zhiwei;Xu Yihong;Chen Songyan;Li Cheng;Huang Wei;Tang Dingliang;Department of Physics;Xiamen University;College of Chemistry and Chemical Engineering;Xiamen University;
Lai Shumei;Mao Danfeng;Huang Zhiwei;Xu Yihong;Chen Songyan;Li Cheng;Huang Wei;Tang Dingliang;Department of Physics;Xiamen University;College of Chemistry and Chemical Engineering;Xiamen University;
..............page:55-60
A transformed analytical model for thermal noise of FinFET based on fringing field approximation
Savitesh Madhulika Sharma;S.Dasgupta;M.V.Kartikeyan;Microelectonics and VLSI Group;Department of Electronics and Communication Engineering;Indian Institute of Technology;
Savitesh Madhulika Sharma;S.Dasgupta;M.V.Kartikeyan;Microelectonics and VLSI Group;Department of Electronics and Communication Engineering;Indian Institute of Technology;
..............page:61-68
Investigation of Coulomb scattering on sSi/Si0.5Ge0.5/sSOI quantum-well p-MOSFETs
Wen Jiao;Liu Qiang;Liu Chang;Wang Yize;Zhang Bo;Xue Zhongying;Di Zengfeng;Yu Wenjie;Zhao Qingtai;School of Materials Science and Engineering;Shanghai University;State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Peter Grünberg Institute 9;JARA-FIT;Forschungszentrum Jülich;
Wen Jiao;Liu Qiang;Liu Chang;Wang Yize;Zhang Bo;Xue Zhongying;Di Zengfeng;Yu Wenjie;Zhao Qingtai;School of Materials Science and Engineering;Shanghai University;State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Peter Grünberg Institute 9;JARA-FIT;Forschungszentrum Jülich;
..............page:69-72
Vertical-dual-source tunnel FETs with steeper subthreshold swing
Jiang Zhi;Zhuang Yiqi;Li Cong;Wang Ping;Liu Yuqi;School of Microelectronic;Xidian University;
Jiang Zhi;Zhuang Yiqi;Li Cong;Wang Ping;Liu Yuqi;School of Microelectronic;Xidian University;
..............page:73-79
A novel HBT trigger SCR in 0.35 μm SiGe BiCMOS technology
Liao Changjun;Liu Jizhi;Liu Zhiwei;School of Communication and Information Engineering;University of Electronic Science and Technology of China;State Key Laboratory of Electronic Thin Films and Integrate Devices;University of Electronic Science and Technology of China;
Liao Changjun;Liu Jizhi;Liu Zhiwei;School of Communication and Information Engineering;University of Electronic Science and Technology of China;State Key Laboratory of Electronic Thin Films and Integrate Devices;University of Electronic Science and Technology of China;
..............page:80-85
A fully integrated CMOS super-regenerative wake-up receiver for EEG applications
Mao Yiqi;Gao Tongqiang;Xu Xiaodong;Yang Haigang;Cai Xinxia;Institute of Electronics;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
Mao Yiqi;Gao Tongqiang;Xu Xiaodong;Yang Haigang;Cai Xinxia;Institute of Electronics;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
..............page:86-91
A low-noise widely tunable Gm-C filter with frequency calibration
Wang Yu;Liu Jing;Yan Na;Min Hao;State Key Laboratory of ASIC and System;Fudan University;
Wang Yu;Liu Jing;Yan Na;Min Hao;State Key Laboratory of ASIC and System;Fudan University;
..............page:92-99
A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission
Zhang Zhang;Tan Ye;Zeng Jianmin;Han Xu;Cheng Xin;Xie Guangjun;School of Electronics Science and Applied Physics;Hefei University of Technology;
Zhang Zhang;Tan Ye;Zeng Jianmin;Han Xu;Cheng Xin;Xie Guangjun;School of Electronics Science and Applied Physics;Hefei University of Technology;
..............page:100-103
Low-noise sub-harmonic injection locked multiloop ring oscillator
Xu Weilin;Wu Di;Wei Xueming;Wei Baolin;Duan Jihai;Gui Fadi;Guangxi Key Laboratory of Precision Navigation Technology and Application;Guilin University of Electronic Technology;
Xu Weilin;Wu Di;Wei Xueming;Wei Baolin;Duan Jihai;Gui Fadi;Guangxi Key Laboratory of Precision Navigation Technology and Application;Guilin University of Electronic Technology;
..............page:104-108