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Chinese Journal of Semiconductors
1674-4926
2016 Issue 7
CMOS mm-wave transceivers for Gbps wireless communication
Chi Baoyong;Song Zheng;Kuang Lixue;Jia Haikun;Meng Xiangyu;Wang Zhihua;Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology;Tsinghua University;
..............page:5-15
Electronic structures and optical properties of Nb-doped SrTiO3 from first principles
Jiao Shujuan;Yan Jinliang;Sun Guipeng;Zhao Yinn;School of Physics and Optoelectronic Engineering;Ludong University;
..............page:16-20
First-principles study on the electronic,elastic and thermodynamic properties of three novel germanium nitrides
Cang Yuping;Yao Xiaoling;Chen Dong;Yang Fan;Yang Huiming;College of Physics and Electronic Engineering;Xinyang Normal University;School of Architecture and Civil Engineering;Xinyang Vocational and Technical College;
..............page:21-27
Effects of defect states on the performance of perovskite solar cells
Si Fengjuan;Tang Fuling;Xue Hongtao;Qi Rongfei;State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals;Department of Materials Science and Engineering;Lanzhou University of Technology;
..............page:28-34
Influence of GaInP ordering on the performance of GaInP solar cells
Yu Shuzhen;Dong Jianrong;Zhao Yongming;Sun Yurun;Li Kuilong;Zeng Xulu;Yang Hui;Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
..............page:35-38
Modeling and simulation of carbon nanotube field effect transistor and its circuit application
Amandeep Singh;Dinesh Kumar Saini;Dinesh Agarwal;Sajal Aggarwal;Mamta Khosla;Balwinder Raj;Department of Electronics & Communication;National Institute of Technology;
..............page:39-44
Photovoltaic performance of hybrid ITO/PEDOT:PSS/n-SnS/Al solar cell structure
Priyal Jain;P.Arun;Department of Electronic Science;University of Delhi;South Campus;Material Science Research Lab;S.G.T.B.Khalsa College;University of Delhi;
..............page:45-52
fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm
Wang Qing;Ding Peng;Su Yongbo;Ding Wuchang;Muhammad Asif;Tang Wu;Jin Zhi;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Department of Microwave IC;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:53-59
Advanced BCD technology with vertical DMOS based on a semi-insulation structure
Ma Kui;Fu Xinghua;Lin Jiexin;Yang Fashun;Department of Electronics;Guizhou University;
..............page:60-66
Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs
Teng Yuan;Zhu Yangjun;Han Zhengsheng;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:67-71
An improved temperature-dependent large signal model of microwave GaN HEMTs
Wang Changsi;Xu Yuehang;Wen Zhang;Chen Zhikai;Xu Ruimin;EHF Key Laboratory of Fundamental Science;University of Electronic Science and Technology of China;
..............page:72-79
Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors
Ye Wei;Ren Wei;Shi Peng;Jiang Zhuangde;Electronic Materials Research Laboratory;Key Laboratory of the Ministry of Education & International Center for Dielectric Research;Xi’an Jiaotong University;State Key Laboratory for Manufacturing Systems Engineering;Xi’an Jiaotong University;
..............page:80-85
Metal-to-metal antifuse with low programming voltage and low on-state resistance
Jiang Yang;Tian Min;Long Huang;Zhao Jie;Chen Shuai;Zhong Huicai;Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics of Chinese Academy of Sciences;
..............page:86-89
Simulation and fabrication of thin film bulk acoustic wave resonator
Han Xixi;Ou Yi;Li Zhigang;Ou Wen;Chen Dapeng;Ye Tianchun;Institute of Microelectronics of Chinese Academy of Sciences;Key Laboratory of Microelectronics Devices and Integrated Technology;
..............page:90-95
The establishment of reliability model for LED lamps
Hao Jian;Jing Lei;Wang Yao;Gao Qun;Ke Hongliang;Wang xiaoxun;Zhang Yanchao;Sun Qiang;Xu Zhijun;Opto-Electronics Technology Center;Changchun Institute of Optics;Fine Mechanics and Physics;Chinese Academy of Sciences;University of Chinese Academy of Science;
..............page:96-101
A high efficiency all-PMOS charge pump for 3D NAND flash memory
Fu Liyin;Wang Yu;Wang Qi;Huo Zongliang;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:102-107
A load balancing bufferless deflection router for network-on-chip
Zhou Xiaofeng;Zhu Zhangming;Zhou Duan;School of Microelectronics;Xidian University;
..............page:108-115
A dual-mode secure UHF RFID tag with a crypto engine in 0.13-μm CMOS
Yang Tao;Zhu Linghao;Tan Xi;Wang Junyu;Zheng Lirong;Min Hao;State Key Laboratory of ASIC & System;Fudan University;
..............page:116-120
Improvements in performance and reliability for segmented linear LED drivers
Liu Cong;Lai Xinquan;Du Hanxiao;Institute of Electronic CAD;Xidian University;Key Laboratory of High-Speed Circuit Design and EMC;Ministry of Education;Xidian University;
..............page:121-127
A 1 V 186-μW 50-MS/s 10-bit subrange SAR ADC in 130-nm CMOS process
Yu Mingyuan;Li Ting;Yang Jiaqi;Zhang Shuangshuang;Lin Fujiang;He Lin;Department of Electronic Science and Technology;University of Science and Technology of China;Science and Technology on Analog Integrated Circuit Laboratory;
..............page:128-134