1674-4926
2016 Issue 6
Advances and prospects in nitrides based light-emitting-diodes
Li Jinmin;Liu Zhe;Liu Zhiqiang;Yan Jianchang;Wei Tongbo;Yi Xiaoyan;Wang Junxi;Research and Development Center for Solid State Lighting;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory of Solid State Lighting;Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application;
Li Jinmin;Liu Zhe;Liu Zhiqiang;Yan Jianchang;Wei Tongbo;Yi Xiaoyan;Wang Junxi;Research and Development Center for Solid State Lighting;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory of Solid State Lighting;Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application;
..............page:5-18
Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD
Yan Guoguo;Zhang Feng;Niu Yingxi;Yang Fei;Liu Xingfang;Wang Lei;Zhao Wanshun;Sun Guosheng;Zeng Yiping;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices;State Grid Smart Grid Research Institute;Dongguan Tianyu Semiconductor;Inc.;
Yan Guoguo;Zhang Feng;Niu Yingxi;Yang Fei;Liu Xingfang;Wang Lei;Zhao Wanshun;Sun Guosheng;Zeng Yiping;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices;State Grid Smart Grid Research Institute;Dongguan Tianyu Semiconductor;Inc.;
..............page:19-24
Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell
Cao Kewei;Liu Tong;Liu Jingming;Xie Hui;Tao Dongyan;Zhao Youwen;Dong Zhiyuan;Hui Feng;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese academy of Sciences;
Cao Kewei;Liu Tong;Liu Jingming;Xie Hui;Tao Dongyan;Zhao Youwen;Dong Zhiyuan;Hui Feng;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese academy of Sciences;
..............page:25-30
Cubic AlN thin film formation on quartz substrate by pulse laser deposition
Zheng Biju;Hu Wen;Faculty of Materials Science and Engineering;Kunming University of Science and Technology;
Zheng Biju;Hu Wen;Faculty of Materials Science and Engineering;Kunming University of Science and Technology;
..............page:31-36
Influence of tension-twisting deformations and defects on optical and electrical properties of B,N doped carbon nanotube superlattices
Liu Guili;Jiang Yan;Song Yuanyuan;Zhou Shuang;Wang Tianshuang;Shenyang University of Technology;Chinese Construction Third Engineering Bureau Ltd.;
Liu Guili;Jiang Yan;Song Yuanyuan;Zhou Shuang;Wang Tianshuang;Shenyang University of Technology;Chinese Construction Third Engineering Bureau Ltd.;
..............page:37-42
Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices
Patrick W.C.Ho;Firas Odai Hatem;Haider Abbas F.Almurib;T.Nandha Kumar;Department of Electrical and Electronic Engineering;University of Nottingham Malaysia Campus;
Patrick W.C.Ho;Firas Odai Hatem;Haider Abbas F.Almurib;T.Nandha Kumar;Department of Electrical and Electronic Engineering;University of Nottingham Malaysia Campus;
..............page:43-55
Large signal and noise properties of heterojunction AlxGa1-xAs/GaAs DDR IMPATTs
Suranjana Banerjee;Monojit Mitra;Indian Institute of Engineering Science and Technology;
Suranjana Banerjee;Monojit Mitra;Indian Institute of Engineering Science and Technology;
..............page:56-63
Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs
Pramod Kumar Tiwari;Mukesh Kumar;Ramavathu Sakru Naik;Gopi Krishna Saramekala;Department of Electronics and Communication Engineering;National Institute of Technology;
Pramod Kumar Tiwari;Mukesh Kumar;Ramavathu Sakru Naik;Gopi Krishna Saramekala;Department of Electronics and Communication Engineering;National Institute of Technology;
..............page:64-67
Enhancement of solar cells parameters by periodic nanocylinders
Najdia Benaziez;Abdelhamid Ounissi;Safia Benaziez;Department of Physics;Hadj Lakhdar University;Department of Electronics;Batna University;
Najdia Benaziez;Abdelhamid Ounissi;Safia Benaziez;Department of Physics;Hadj Lakhdar University;Department of Electronics;Batna University;
..............page:68-75
Finite element analysis of expansion-matched submounts for high-power laser diodes packaging
Ni Yuxi;Ma Xiaoyu;Jing Hongqi;Liu Suping;National Engineering Research Center for Optoelectronic Devices;Institute of Semiconductors;Chinese Academy of Sciences;
Ni Yuxi;Ma Xiaoyu;Jing Hongqi;Liu Suping;National Engineering Research Center for Optoelectronic Devices;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:76-80
Electrical properties of Ge metal–oxide–semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti
Xu Huoxi;Xu Jingping;Department of Electronic Information;Huanggang Normal University;School of Optical & Electronic Information;Huazhong University of Science and Technology;
Xu Huoxi;Xu Jingping;Department of Electronic Information;Huanggang Normal University;School of Optical & Electronic Information;Huazhong University of Science and Technology;
..............page:81-84
p~+–n~-–n~+-type power diode with crystalline/nanocrystalline Si mosaic electrodes
Wei Wensheng;Zhang Chunxi;College of Physics & Electronic Information Engineering;Wenzhou University;School of Instrumentation Science and Opto-Electronics Engineering;Beihang University;
Wei Wensheng;Zhang Chunxi;College of Physics & Electronic Information Engineering;Wenzhou University;School of Instrumentation Science and Opto-Electronics Engineering;Beihang University;
..............page:85-90
Load-pull measurement analysis of AlGaN/GaN HEMT taking into account number of gate fingers
Pongthavornkamol Tiwat;Liu Guoguo;Yuan Tingting;Zheng Yingkui;Liu Xinyu;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
Pongthavornkamol Tiwat;Liu Guoguo;Yuan Tingting;Zheng Yingkui;Liu Xinyu;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:91-95
Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT
Wang Chong;Wei Xiaoxiao;He Yunlong;Zheng Xuefeng;Ma Xiaohua;Zhang Jincheng;Hao Yue;Key Lab of Wide Band Gap Semiconductor Materials and Devices;Institute of Microelectronics;Xidian University;
Wang Chong;Wei Xiaoxiao;He Yunlong;Zheng Xuefeng;Ma Xiaohua;Zhang Jincheng;Hao Yue;Key Lab of Wide Band Gap Semiconductor Materials and Devices;Institute of Microelectronics;Xidian University;
..............page:96-100
Junction-temperature estimation in AlGaInP light-emitting diodes using the luminescence spectra method
Wen Jing;Wen Yumei;Li Ping;Wang Sanshan;Research Center of Sensors and Instruments;College of Optoelectronic Engineering;Chongqing University;
Wen Jing;Wen Yumei;Li Ping;Wang Sanshan;Research Center of Sensors and Instruments;College of Optoelectronic Engineering;Chongqing University;
..............page:101-104
The investigation of the zero temperature coefficient point of power MOSFET
Zhang Bowen;Zhang Xiaoling;Xiong Wenwen;She Shuojie;Xie Xuesong;College of Electronic Information & Control Engineering;Beijing University of Technology;
Zhang Bowen;Zhang Xiaoling;Xiong Wenwen;She Shuojie;Xie Xuesong;College of Electronic Information & Control Engineering;Beijing University of Technology;
..............page:105-109
Low-frequency noise characteristics in the MOSFETs processed in 65 nm technology
Liu Yuan;Liu Yurong;He Yujuan;Li Bin;En Yunfei;Fang Wenxiao;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory;CEPREI;School of Electronic and Information Engineering;South China University of Technology;
Liu Yuan;Liu Yurong;He Yujuan;Li Bin;En Yunfei;Fang Wenxiao;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory;CEPREI;School of Electronic and Information Engineering;South China University of Technology;
..............page:110-115
High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer
Gao Tao;Xu Ruimin;Zhang Kai;Kong Yuechan;Zhou Jianjun;Kong Cen;Yu Xinxin;Dong Xun;Chen Tangsheng;Fundamental Science on EHF Laboratory;University of Electronic Science and Technology of China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute;
Gao Tao;Xu Ruimin;Zhang Kai;Kong Yuechan;Zhou Jianjun;Kong Cen;Yu Xinxin;Dong Xun;Chen Tangsheng;Fundamental Science on EHF Laboratory;University of Electronic Science and Technology of China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute;
..............page:116-119
A superjunction structure using high-k insulator for power devices:theory and optimization
Huang Mingmin;Chen Xingbi;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
Huang Mingmin;Chen Xingbi;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:120-125
Evaluation of light extraction efficiency for the light-emitting diodes based on the transfer matrix formalism and ray-tracing method
An Pingbo;Wang Li;Lu Hongxi;Yu Zhiguo;Liu Lei;Xi Xin;Zhao Lixia;Wang Junxi;Li Jinmin;Semiconductor Lighting Research & Development Center;Institute of Semiconductors;Chinese Academy of Sciences;
An Pingbo;Wang Li;Lu Hongxi;Yu Zhiguo;Liu Lei;Xi Xin;Zhao Lixia;Wang Junxi;Li Jinmin;Semiconductor Lighting Research & Development Center;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:126-132
Total dose responses and reliability issues of 65 nm NMOSFETs
Yu Dezhao;Zheng Qiwen;Cui Jiangwei;Zhou Hang;Yu Xuefeng;Guo Qi;Key Laboratory of Functional Materials and Devices for Special Environments;Xinjiang Technical Institute of Physics and Chemistry;Chinese Academy of Sciences;Xinjiang Key Laboratory of Electronic Information Material and Device;University of Chinese Academy of Sciences;
Yu Dezhao;Zheng Qiwen;Cui Jiangwei;Zhou Hang;Yu Xuefeng;Guo Qi;Key Laboratory of Functional Materials and Devices for Special Environments;Xinjiang Technical Institute of Physics and Chemistry;Chinese Academy of Sciences;Xinjiang Key Laboratory of Electronic Information Material and Device;University of Chinese Academy of Sciences;
..............page:133-139
A 10 b 50 MS/s two-stage pipelined SAR ADC in 180 nm CMOS
Shen Yi;Liu Shubin;Zhu Zhangming;School of Microelectronics;Xidian University;
Shen Yi;Liu Shubin;Zhu Zhangming;School of Microelectronics;Xidian University;
..............page:140-144
A 14-bit 40-MHz analog front end for CCD application
Wang Jingyu;Zhu Zhangming;Liu Shubin;School of Microelectronics;Xidian University;
Wang Jingyu;Zhu Zhangming;Liu Shubin;School of Microelectronics;Xidian University;
..............page:145-155
DSOI—a novel structure enabling adjust circuit dynamically
Gao Chuang;Zhao Xing;Zhao Kai;Gao Jiantou;Xie Bingqing;Yu Fang;Luo Jiajun;Institute of Microelectronics of Chinese Academy of Sciences;Key Laboratory of Special Devices Technologies;
Gao Chuang;Zhao Xing;Zhao Kai;Gao Jiantou;Xie Bingqing;Yu Fang;Luo Jiajun;Institute of Microelectronics of Chinese Academy of Sciences;Key Laboratory of Special Devices Technologies;
..............page:156-159
A CMOS detection chip for amperometric sensors with chopper stabilized incremental △∑ ADC
Chen Min;Liu Yuntao;Xiao Jingbo;Chen Jie;Institute of Microelectronics;Chinese Academy of Sciences;College of Information and Communication Engineering;Harbin Engineering University;
Chen Min;Liu Yuntao;Xiao Jingbo;Chen Jie;Institute of Microelectronics;Chinese Academy of Sciences;College of Information and Communication Engineering;Harbin Engineering University;
..............page:160-165
An S/H circuit with parasitics optimized for IF-sampling
Zheng Xuqiang;Li Fule;Wang Zhijun;Li Weitao;Jia Wen;Wang Zhihua;Yue Shigang;Tsinghua National Laboratory for Information Science and Technology;Institute of Microelectronics;Tsinghua University;School of Computer Science;University of Lincoln;Research Institute of Tsinghua University in Shenzhen;
Zheng Xuqiang;Li Fule;Wang Zhijun;Li Weitao;Jia Wen;Wang Zhihua;Yue Shigang;Tsinghua National Laboratory for Information Science and Technology;Institute of Microelectronics;Tsinghua University;School of Computer Science;University of Lincoln;Research Institute of Tsinghua University in Shenzhen;
..............page:166-170
A double-stage start-up structure to limit the inrush current used in current mode charge pump
Liu Cong;Lai Xinquan;Du Hanxiao;Chi Yuan;Institute of Electronic CAD;Xidian University;Key Laboratory of High-Speed Circuit Design and EMC;Ministry of Education;Xidian University;
Liu Cong;Lai Xinquan;Du Hanxiao;Chi Yuan;Institute of Electronic CAD;Xidian University;Key Laboratory of High-Speed Circuit Design and EMC;Ministry of Education;Xidian University;
..............page:171-180
Design and performances of a low-noise and radiation-hardened readout ASIC for CdZnTe detectors
Gan Bo;Wei Tingcun;Gao Wu;Hu Yongcai;School of Computer Science and Technology;Northwestern Polytechnical University;
Gan Bo;Wei Tingcun;Gao Wu;Hu Yongcai;School of Computer Science and Technology;Northwestern Polytechnical University;
..............page:181-187