1674-4926
2016 Issue 4
Fabrication techniques and applications of flexible graphene-based electronic devices
Tao Luqi;Wang Danyang;Jiang Song;Liu Ying;Xie Qianyi;Tian He;Deng Ningqin;Wang Xuefeng;Yang Yi;Ren Tian-Ling;Institute of Microelectronics;Tsinghua University;Tsinghua National Laboratory for Information Science and Technology;Tsinghua University;Ming Hsieh Department of Electrical Engineering;University of Southern California;
Tao Luqi;Wang Danyang;Jiang Song;Liu Ying;Xie Qianyi;Tian He;Deng Ningqin;Wang Xuefeng;Yang Yi;Ren Tian-Ling;Institute of Microelectronics;Tsinghua University;Tsinghua National Laboratory for Information Science and Technology;Tsinghua University;Ming Hsieh Department of Electrical Engineering;University of Southern California;
..............page:5-15
Hybrid functional calculations on the band gap bowing parameters of InxGa1-xN
Lin Mei;Xu Yixu;Zhang Jianhua;Wu Shunqing;Zhu Zizhong;Department of Physics and Institute of Theoretical Physics and Astrophysics;Xiamen University;Institute of Electromagnetics and Acoustics;Department of Electronic Science;Xiamen University;Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry;Xiamen University;
Lin Mei;Xu Yixu;Zhang Jianhua;Wu Shunqing;Zhu Zizhong;Department of Physics and Institute of Theoretical Physics and Astrophysics;Xiamen University;Institute of Electromagnetics and Acoustics;Department of Electronic Science;Xiamen University;Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry;Xiamen University;
..............page:16-20
Electronic structure and optical properties of F-doped β-Ga2O3 from first principles calculations
Yan Jinliang;Qu Chong;School of Physics and Optoelectronic Engineering;Ludong University;
Yan Jinliang;Qu Chong;School of Physics and Optoelectronic Engineering;Ludong University;
..............page:21-27
Low substrate temperature deposition of transparent and conducting ZnO:Al thin films by RF magnetron sputtering
Ravindra Waykar;Amit Pawbake;Rupali Kulkarni;Ashok Jadhavar;Adinath Funde;Vaishali Waman;Rupesh Dewan;Habib Pathan;Sandesh Jadkar;School of Energy Studies;Savitribai Phule Pune University;Modern College of Arts;Science and Commerce;Department of Physics;Savitribai Phule Pune University;
Ravindra Waykar;Amit Pawbake;Rupali Kulkarni;Ashok Jadhavar;Adinath Funde;Vaishali Waman;Rupesh Dewan;Habib Pathan;Sandesh Jadkar;School of Energy Studies;Savitribai Phule Pune University;Modern College of Arts;Science and Commerce;Department of Physics;Savitribai Phule Pune University;
..............page:28-35
Characteristic diode parameters in thermally annealed Ni/p-InP contacts
A.Turut;K.Ejderha;N.Yildirim;B.Abay;Istanbul Medeniyet University;Faculty of Sciences;Department of Engineering Physics;Department of Electricity and Energy;Vocational High School of Technical Sciences;Bingol University;Bing?l University;Faculty of Sciences and Arts;Department of Physics;Department of Physics;Faculty of Sciences and Arts;Ataturk University;
A.Turut;K.Ejderha;N.Yildirim;B.Abay;Istanbul Medeniyet University;Faculty of Sciences;Department of Engineering Physics;Department of Electricity and Energy;Vocational High School of Technical Sciences;Bingol University;Bing?l University;Faculty of Sciences and Arts;Department of Physics;Department of Physics;Faculty of Sciences and Arts;Ataturk University;
..............page:36-42
Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications
Nacereddine Lakhdar;Brahim Lakehal;Department of Electronics;University of El Oued;LEA;Department of Electronics;University of Batna;Department of Electronics;University of Kasdi Merbah Ouargla;
Nacereddine Lakhdar;Brahim Lakehal;Department of Electronics;University of El Oued;LEA;Department of Electronics;University of Batna;Department of Electronics;University of Kasdi Merbah Ouargla;
..............page:43-47
Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT
J.Panda;K.Jena;R.Swain;T.R.Lenka;Microelectronics and VLSI Design Group;Department of Electronics and Communication Engineering;National Institute of Technology Silchar;
J.Panda;K.Jena;R.Swain;T.R.Lenka;Microelectronics and VLSI Design Group;Department of Electronics and Communication Engineering;National Institute of Technology Silchar;
..............page:48-53
A physical model of hole mobility for germanium-on-insulator pMOSFETs
Yuan Wenyu;Xu Jingping;Liu Lu;Huang Yong;Cheng Zhixiang;School of Optical and Electronic Information;Huazhong University of Science and Technology;
Yuan Wenyu;Xu Jingping;Liu Lu;Huang Yong;Cheng Zhixiang;School of Optical and Electronic Information;Huazhong University of Science and Technology;
..............page:54-60
High current gain 4H-SiC bipolar junction transistor
Zhang Yourun;Shi Jinfei;Liu Ying;Sun Chengchun;Guo Fei;Zhang Bo;State Key Laboratory of Electronic Thin Film and Integrated Device;University of Electronic Science and Technology of China;School of Energy Science and Engineering;
Zhang Yourun;Shi Jinfei;Liu Ying;Sun Chengchun;Guo Fei;Zhang Bo;State Key Laboratory of Electronic Thin Film and Integrated Device;University of Electronic Science and Technology of China;School of Energy Science and Engineering;
..............page:61-64
GaN-on-Si blue/white LEDs: epitaxy, chip, and package
Sun Qian;Yan Wei;Feng Meixin;Li Zengcheng;Feng Bo;Zhao Hanmin;Yang Hui;Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;Lattice Power Corporation;Lattice Power Corporation;University of Chinese Academy of Sciences;
Sun Qian;Yan Wei;Feng Meixin;Li Zengcheng;Feng Bo;Zhao Hanmin;Yang Hui;Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;Lattice Power Corporation;Lattice Power Corporation;University of Chinese Academy of Sciences;
..............page:65-72
AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications
Song Xubo;Lü Yuanjie;Gu Guodong;Wang Yuangang;Tan Xin;Zhou Xingye;Dun Shaobo;Xu Peng;Yin Jiayun;Wei Bihua;Feng Zhihong;Cai Shujun;National Key Laboratory of ASIC;Hebei Semiconductor Research Institute;
Song Xubo;Lü Yuanjie;Gu Guodong;Wang Yuangang;Tan Xin;Zhou Xingye;Dun Shaobo;Xu Peng;Yin Jiayun;Wei Bihua;Feng Zhihong;Cai Shujun;National Key Laboratory of ASIC;Hebei Semiconductor Research Institute;
..............page:73-76
A sensitive charge scanning probe based on silicon single electron transistor
Su Lina;Li Xinxing;Qin Hua;Gu Xiaofeng;Engineering Research Center of Io T Technology Applications;Department of Electronic Engineering;Jiangnan University;Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;
Su Lina;Li Xinxing;Qin Hua;Gu Xiaofeng;Engineering Research Center of Io T Technology Applications;Department of Electronic Engineering;Jiangnan University;Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;
..............page:77-80
Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer
Feng Jiangmei;Shen Huajun;Ma Xiaohua;Bai Yun;Wu Jia;Li Chengzhan;Liu Kean;Liu Xinyu;School of Advanced Materials and Nanotechnology;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;Xidian University;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Zhuzhou CSR Times Electric Co.;Ltd;
Feng Jiangmei;Shen Huajun;Ma Xiaohua;Bai Yun;Wu Jia;Li Chengzhan;Liu Kean;Liu Xinyu;School of Advanced Materials and Nanotechnology;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;Xidian University;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Zhuzhou CSR Times Electric Co.;Ltd;
..............page:81-85
Temperature-variable high-frequency dynamic modeling of PIN diode
Ye Shangbin;Zhang Jiajia;Zhang Yicheng;Yao Yongtao;Tongji University;
Ye Shangbin;Zhang Jiajia;Zhang Yicheng;Yao Yongtao;Tongji University;
..............page:86-91
Thermal analysis in high power GaAs-based laser diodes
Gong Xueqin;Feng Shiwei;Yue Yuan;Yang Junwei;Li Jingwe;School of Electronic Information and Control Engineering;Beijing University of Technology;
Gong Xueqin;Feng Shiwei;Yue Yuan;Yang Junwei;Li Jingwe;School of Electronic Information and Control Engineering;Beijing University of Technology;
..............page:92-96
A novel measuring method of clamping force for electrostatic chuck in semiconductor devices
Wang Kesheng;Cheng Jia;Zhong Yin;Ji Linhong;Department of Mechanical Engineering;Tsinghua University;Department of Mechanical Engineering;Academy of Armored Force Engineering;Institute of Robotics;Carnegie Mellon University;
Wang Kesheng;Cheng Jia;Zhong Yin;Ji Linhong;Department of Mechanical Engineering;Tsinghua University;Department of Mechanical Engineering;Academy of Armored Force Engineering;Institute of Robotics;Carnegie Mellon University;
..............page:97-103
A low power CMOS VCO using inductive-biasing with high performance FoM
Liu Weihao;Huang Lu;Department of Electronic Science and Technology;University of Science and Technology of China;
Liu Weihao;Huang Lu;Department of Electronic Science and Technology;University of Science and Technology of China;
..............page:104-109
Design of power balance SRAM for DPA-resistance
Zhou Keji;Wang Pengjun;Wen Liang;Institute of Circuits and Systems;Ningbo University;State Key Laboratory of ASIC & System;Fudan University;
Zhou Keji;Wang Pengjun;Wen Liang;Institute of Circuits and Systems;Ningbo University;State Key Laboratory of ASIC & System;Fudan University;
..............page:110-116
Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer
Ren Xiaoli;Pang Cheng;Qin Zheng;Ping Ye;Jiang Feng;Xue Kai;Liu Haiyan;Yu Daquan;National Center for Advanced Packaging;Institute of Microelectronics;Chinese Academy of Sciences;
Ren Xiaoli;Pang Cheng;Qin Zheng;Ping Ye;Jiang Feng;Xue Kai;Liu Haiyan;Yu Daquan;National Center for Advanced Packaging;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:117-123
Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET
Zhang Jin;Liu Yuling;Yan Chenqi;He Yangang;Gao Baohong;Tianjin Key Laboratory of Electronic Materials and Devices;School of Electronic and Information Engineering;Hebei University of Technology;
Zhang Jin;Liu Yuling;Yan Chenqi;He Yangang;Gao Baohong;Tianjin Key Laboratory of Electronic Materials and Devices;School of Electronic and Information Engineering;Hebei University of Technology;
..............page:124-128