1674-4926
2015 Issue 9
Energy levels of magneto-optical polaron in spherical quantum dot—Part 1:Strong coupling
A.J.Fotue;S.C.Kenfack;N.Issofa;M.Tiotsop;H.Fotsin;E.Mainimo;L.C.Fai;Mesoscopic and Multilayers Structures Laboratory;Department of Physics;Faculty of Science;University of Dschang;Laboratory of Electronics and Signal Processing;Department of Physics;Faculty of Science;University of Dschang;
A.J.Fotue;S.C.Kenfack;N.Issofa;M.Tiotsop;H.Fotsin;E.Mainimo;L.C.Fai;Mesoscopic and Multilayers Structures Laboratory;Department of Physics;Faculty of Science;University of Dschang;Laboratory of Electronics and Signal Processing;Department of Physics;Faculty of Science;University of Dschang;
..............page:5-12
Polarization effects and tests for crystalline silicon solar cells
Lu Weiming;Wang Zhigang;Hu Hui;Enterprise Technology Center;Taizhou Detong Electric. Co. Ltd;
Lu Weiming;Wang Zhigang;Hu Hui;Enterprise Technology Center;Taizhou Detong Electric. Co. Ltd;
..............page:13-18
Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies
T.Tibermacine;A.Merazga;M.Ledra;N.Ouhabab;Laboratory of Metallic and Semi-conducting Materials;University of Biskra;Physics Department;Faculty of Science;Taif University;
T.Tibermacine;A.Merazga;M.Ledra;N.Ouhabab;Laboratory of Metallic and Semi-conducting Materials;University of Biskra;Physics Department;Faculty of Science;Taif University;
..............page:19-23
The effect of random dopant fluctuation on threshold voltage and drain current variation in junctionless nanotransistors
Arash Rezapour;Pegah Rezapour;Electrical Engineering Department;Faculty of Engineering;Islamic Azad University of Arak;MSc;Electrical Engineering Department;Faculty of Engineering;Islamic Azad University of Khomein;
Arash Rezapour;Pegah Rezapour;Electrical Engineering Department;Faculty of Engineering;Islamic Azad University of Arak;MSc;Electrical Engineering Department;Faculty of Engineering;Islamic Azad University of Khomein;
..............page:24-29
Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon
Mao Qinghua;Liu Junlin;Wu Xiaoming;Zhang Jianli;Xiong Chuanbing;Mo Chunlan;Zhang Meng;Jiang Fengyi;National Engineering Technology Research Center for LED on Si Substrate;Nanchang University;
Mao Qinghua;Liu Junlin;Wu Xiaoming;Zhang Jianli;Xiong Chuanbing;Mo Chunlan;Zhang Meng;Jiang Fengyi;National Engineering Technology Research Center for LED on Si Substrate;Nanchang University;
..............page:30-33
Characteristics of sputtered Y-doped IZO thin films and devices
Wang Dandan;Wang Qingpu;Wang Hanbin;Zhang Xijian;Wu Liwei;Li Fujie;Yuan Shuai;School of Physics;Shandong University;
Wang Dandan;Wang Qingpu;Wang Hanbin;Zhang Xijian;Wu Liwei;Li Fujie;Yuan Shuai;School of Physics;Shandong University;
..............page:34-39
Effects of N concentration on electronic and optical properties of N-doped PbTiO3
Zhao Yinnü;Yan Jinliang;Dean’s Office;Ludong University;School of Physics and Optoelectronic Engineering;Ludong University;
Zhao Yinnü;Yan Jinliang;Dean’s Office;Ludong University;School of Physics and Optoelectronic Engineering;Ludong University;
..............page:40-44
Effect of Cr/In-doping on the crystalline quality of bulk ZnTe crystals grown from Te solution by temperature gradient solution growth(TGSG) method
Yang Rui;Jie Wanqi;Sun Xiaoyan;Yang Min;State Key Laboratory of Solidification Processing;School of Materials Science and Engineering;Northwestern Polytechnical University;
Yang Rui;Jie Wanqi;Sun Xiaoyan;Yang Min;State Key Laboratory of Solidification Processing;School of Materials Science and Engineering;Northwestern Polytechnical University;
..............page:45-50
The impact of gate misalignment on the analog performance of a dual-material double gate junctionless transistor
S.Intekhab Amin;R.K.Sarin;Department of Electronics and Communication Engineering;Dr.B.R.Ambedkar National Institute of Technology Jalandhar;
S.Intekhab Amin;R.K.Sarin;Department of Electronics and Communication Engineering;Dr.B.R.Ambedkar National Institute of Technology Jalandhar;
..............page:51-57
Design and fabrication of a 3.3 kV 4H-SiC MOSFET
Huang Runhua;Tao Yonghong;Bai Song;Chen Gang;Wang Ling;Liu Ao;Wei Neng;Li Yun;Zhao Zhifei;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute;
Huang Runhua;Tao Yonghong;Bai Song;Chen Gang;Wang Ling;Liu Ao;Wei Neng;Li Yun;Zhao Zhifei;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute;
..............page:58-61
Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation
Li Yanyue;Deng Xiaochuan;Liu Yunfeng;Zhao Yanli;Li Chengzhan;Chen Xixi;Zhang Bo;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Institute of Optics and Electronics;Chinese Academy of Sciences;Power Electronics Business Unit;Zhuzhou CSR Times Electric Co.;Ltd.;
Li Yanyue;Deng Xiaochuan;Liu Yunfeng;Zhao Yanli;Li Chengzhan;Chen Xixi;Zhang Bo;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Institute of Optics and Electronics;Chinese Academy of Sciences;Power Electronics Business Unit;Zhuzhou CSR Times Electric Co.;Ltd.;
..............page:62-65
Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator
Wang Zheli;Zhou Jianjun;Kong Yuechan;Kong Cen;Dong Xun;Yang Yang;Chen Tangsheng;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute;
Wang Zheli;Zhou Jianjun;Kong Yuechan;Kong Cen;Dong Xun;Yang Yang;Chen Tangsheng;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute;
..............page:66-69
Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs
Fang Wen;Eddy Simoen;Li Chikang;Marc Aoulaiche;Luo Jun;Zhao Chao;Cor Claeys;IMEC;E.E. Depart. KU Leuven;Key Laboratory of Microelectronic Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Graduate Institute of Photonics and Optoelectronics and Department of Electrical;Engineering;National Taiwan University;Micron Technology Belgium;IMEC Campus;
Fang Wen;Eddy Simoen;Li Chikang;Marc Aoulaiche;Luo Jun;Zhao Chao;Cor Claeys;IMEC;E.E. Depart. KU Leuven;Key Laboratory of Microelectronic Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Graduate Institute of Photonics and Optoelectronics and Department of Electrical;Engineering;National Taiwan University;Micron Technology Belgium;IMEC Campus;
..............page:70-74
Physical origin investigation of the flatband voltage roll off for metal–oxide–semiconductor device with high-k/metal gate structure
Han Kai;Wang Xiaolei;Wang Wenwu;Department of Physics and Electronic Science;Weifang University;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
Han Kai;Wang Xiaolei;Wang Wenwu;Department of Physics and Electronic Science;Weifang University;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:75-78
4500 V SPT~+ IGBT optimization on static and dynamic losses
Dai Qingyun;Tian Xiaoli;Zhang Wenliang;Lu Shuojin;Zhu Yangjun;Jiangsu R&D Center for Internet of Things;Institute of Microelectronics;Chinese Academy of Sciences;Junshine CAS-IGBT Technology Co.;Ltd;
Dai Qingyun;Tian Xiaoli;Zhang Wenliang;Lu Shuojin;Zhu Yangjun;Jiangsu R&D Center for Internet of Things;Institute of Microelectronics;Chinese Academy of Sciences;Junshine CAS-IGBT Technology Co.;Ltd;
..............page:79-82
Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trapping memory
Li Xinkai;Huo Zongliang;Jin Lei;Jiang Dandan;Hong Peizhen;Xu Qiang;Tang Zhaoyun;Li Chunlong;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;
Li Xinkai;Huo Zongliang;Jin Lei;Jiang Dandan;Hong Peizhen;Xu Qiang;Tang Zhaoyun;Li Chunlong;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:83-88
Free-space communication based on quantum cascade laser
Liu Chuanwei;Zhai Shenqiang;Zhang Jinchuan;Zhou Yuhong;Jia Zhiwei;Liu Fengqi;Wang Zhanguo;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;
Liu Chuanwei;Zhai Shenqiang;Zhang Jinchuan;Zhou Yuhong;Jia Zhiwei;Liu Fengqi;Wang Zhanguo;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:89-92
Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser
Ke Qing;Tan Shaoyang;Liu Songtao;Lu Dan;Zhang Ruikang;Wang Wei;Ji Chen;Key Laboratory of Semiconductors Materials;Institute of Semiconductors;Chinese Academy of Sciences;
Ke Qing;Tan Shaoyang;Liu Songtao;Lu Dan;Zhang Ruikang;Wang Wei;Ji Chen;Key Laboratory of Semiconductors Materials;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:93-96
A novel PIN photodetector with double linear arrays for rainfall prediction
Yao Yan;Liu Xiong;Yuan Li;Zhang Zhaohua;Ren Tianling;Integrated Micro/Nano Systems Laboratory;Beijing Institute of Nanoenergy and Nanosystems;Chinese Academy of Sciences;Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology;Tsinghua University;
Yao Yan;Liu Xiong;Yuan Li;Zhang Zhaohua;Ren Tianling;Integrated Micro/Nano Systems Laboratory;Beijing Institute of Nanoenergy and Nanosystems;Chinese Academy of Sciences;Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology;Tsinghua University;
..............page:97-100
Comment on “Chen et al., Fabrication and photovoltaic conversion enhancement...”,Electrochimica Acta,2014
Lara Valentic;Nima E.Gorji;Department of Environment Sciences;University of Nova Gorica;Department of Physics;Brown University;
Lara Valentic;Nima E.Gorji;Department of Environment Sciences;University of Nova Gorica;Department of Physics;Brown University;
..............page:101-102
A full W-band low noise amplifier module for millimeter-wave applications
Zhao Hua;Yao Hongfei;Ding Peng;Su Yongbo;Ning Xiaoxi;Jin Zhi;Liu Xinyu;Institute of Microelectronics;Chinese Academy of Sciences;
Zhao Hua;Yao Hongfei;Ding Peng;Su Yongbo;Ning Xiaoxi;Jin Zhi;Liu Xinyu;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:103-108
On-chip power-combining techniques for watt-level linear power amplifiers in 0.18 μm CMOS
Ren Zhixiong;Zhang Kefeng;Liu Lanqi;Li Cong;Chen Xiaofei;Liu Dongsheng;Liu Zhenglin;Zou Xuecheng;School of Optical and Electronic Information;Huazhong University of Science and Technology;
Ren Zhixiong;Zhang Kefeng;Liu Lanqi;Li Cong;Chen Xiaofei;Liu Dongsheng;Liu Zhenglin;Zou Xuecheng;School of Optical and Electronic Information;Huazhong University of Science and Technology;
..............page:109-118
A class-CVCO based Σ–Δ fraction-N frequency synthesizer with AFC for 802.11ah applications
Yu Xiaobao;Han Siyang;Jin Zongming;Wang Zhihua;Chi Baoyong;Institute of Microelectronics;Tsinghua University;
Yu Xiaobao;Han Siyang;Jin Zongming;Wang Zhihua;Chi Baoyong;Institute of Microelectronics;Tsinghua University;
..............page:119-124
A novel pressure sensor calibration system based on a neural network
Peng Xiaojun;Yang Kuntao;Yuan Xiuhua;School of Optical and Electronic Information;Huazhong University of Science and Technology;Wuhan Second Ship Design Research Institute;
Peng Xiaojun;Yang Kuntao;Yuan Xiuhua;School of Optical and Electronic Information;Huazhong University of Science and Technology;Wuhan Second Ship Design Research Institute;
..............page:125-128
Millimeter wave band ultra wideband transmitter MMIC
Jin Ling;Nathalie Rolland;SVA Communication Technology Co.;Ltd;Institut d’Electronique;de Microélectronique et de Nanotechnologie;USTL;Villeneuve d’Ascq Cedex;France;
Jin Ling;Nathalie Rolland;SVA Communication Technology Co.;Ltd;Institut d’Electronique;de Microélectronique et de Nanotechnologie;USTL;Villeneuve d’Ascq Cedex;France;
..............page:129-134
An extremely low power voltage reference with high PSRR for power-aware ASICs
Duan Jihai;Deng Dongyu;Xu Weilin;Wei Baolin;Guangxi Key Laboratory of Precision Navigation Technology and Application;Guilin University of Electronic Technology;
Duan Jihai;Deng Dongyu;Xu Weilin;Wei Baolin;Guangxi Key Laboratory of Precision Navigation Technology and Application;Guilin University of Electronic Technology;
..............page:135-139
Modeling of channel mismatch in time-interleaved SAR ADC
Li Dengquan;Zhang Liang;Zhu Zhangming;Yang Yintang;School of Microelectronics;Xidian University;
Li Dengquan;Zhang Liang;Zhu Zhangming;Yang Yintang;School of Microelectronics;Xidian University;
..............page:140-146
A quantitative investigation of the influence with the components of the CMP alkali slurry on the polishing rate
Fan Shiyan;Liu Enhai;Zhang Jun;Liu Yuling;Wang Lei;Lin Kai;Sun Ming;Shi Lukui;Institute of Microelectronics;Hebei University of Technology;School of Computer Science and Engineering;Hebei University of Technology;National Ocean Technology Center;
Fan Shiyan;Liu Enhai;Zhang Jun;Liu Yuling;Wang Lei;Lin Kai;Sun Ming;Shi Lukui;Institute of Microelectronics;Hebei University of Technology;School of Computer Science and Engineering;Hebei University of Technology;National Ocean Technology Center;
..............page:147-152