1674-4926
2015 Issue 7
Electric and magnetic optical polaron in quantum dot—Part 1: strong coupling
A.J.Fotue;N.Issofa;M.Tiotsop;S.C.Kenfack;M.P.Tabue Djemmo;H.Fotsin;and L.C.Fai;Mesoscopic and Multilayers Structures Laboratory;Department of Physics;Faculty of Science;University of Dschang;Laboratory of Mechanics and Modeling of Physical Systems;Faculty of Science;University of Dschang;Laboratory of Electronics and Signal Processing;Department of Physics;Faculty of Science;University of Dschang;
A.J.Fotue;N.Issofa;M.Tiotsop;S.C.Kenfack;M.P.Tabue Djemmo;H.Fotsin;and L.C.Fai;Mesoscopic and Multilayers Structures Laboratory;Department of Physics;Faculty of Science;University of Dschang;Laboratory of Mechanics and Modeling of Physical Systems;Faculty of Science;University of Dschang;Laboratory of Electronics and Signal Processing;Department of Physics;Faculty of Science;University of Dschang;
..............page:5-10
Optimized geometry and electronic structure of three-dimensional β-graphyne
Pei Yang;Wu Haibin;Liu Jingmin;State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Beijing Orient Institute of Measurement & Test;
Pei Yang;Wu Haibin;Liu Jingmin;State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Beijing Orient Institute of Measurement & Test;
..............page:11-16
Scattering mechanism of hole in（001）,（101）,（111） biaxially-strained Si and Si1-xGex materials
Zhao Lixia;Yang Chao;Zhu He;Song Jianjun;Hebei Poshing Electronics Technology Co.Ltd.;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;
Zhao Lixia;Yang Chao;Zhu He;Song Jianjun;Hebei Poshing Electronics Technology Co.Ltd.;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;
..............page:17-20
Growth-temperature-dependent optical and acetone detection properties of ZnO thin films
P.S.Shewale;Y.S.Yu;Convergence of IT Devices Institute;Dong-Eui University;Department of Radiological Science;Dong-Eui University;
P.S.Shewale;Y.S.Yu;Convergence of IT Devices Institute;Dong-Eui University;Department of Radiological Science;Dong-Eui University;
..............page:21-25
Magnetic polarization of a Mn-doped semiconductor nanostructure controlled by an external bias
P.Paradeo;Unstituto de Fisica;Universidad Nacional Autonoma de Mexico;
P.Paradeo;Unstituto de Fisica;Universidad Nacional Autonoma de Mexico;
..............page:26-32
Photocatalytic degradation of RhB and TNT and photocatalytic water splitting with CZTS microparticles
S.S.Shinde;Hanyang University;
S.S.Shinde;Hanyang University;
..............page:33-37
Temperature sensor based on composite film of vanadium complex（VO2（3-fl））and CNT
Kh.S.Karimov;M.Mahroof-Tahir;M.Saleem;M.Tariq Saeed Chani;A.Khan Niaz;GIK Institute of Engineering Sciences and Technology;Center for Innovative Development of Science and New Technologies;Academy of Sciences;Department of Chemistry and Earth Sciences;Qatar University;Government College of Science;Center of Excellence for Advanced Materials Research;King Abdulaziz University;
Kh.S.Karimov;M.Mahroof-Tahir;M.Saleem;M.Tariq Saeed Chani;A.Khan Niaz;GIK Institute of Engineering Sciences and Technology;Center for Innovative Development of Science and New Technologies;Academy of Sciences;Department of Chemistry and Earth Sciences;Qatar University;Government College of Science;Center of Excellence for Advanced Materials Research;King Abdulaziz University;
..............page:38-42
Effect of Ge–GeO2 co-doping on non-ohmic behaviour of TiO2–V2O5–Y2O3 varistor ceramics
Kang Kunyong;Gan Guoyou;Yan Jikang;Yi Jianhong;Zhang Jiamin;Du Jinghong;Zhao Wenchao;Rong Xuequan;Faculty of Materials Science and Engineering;Kunming University of Science and Technology;Key Laboratory of Advance Materials of Yunnan Province;Key Laboratory of Advance Materials of Precious-Nonferrous Metals;Ministry of Education;
Kang Kunyong;Gan Guoyou;Yan Jikang;Yi Jianhong;Zhang Jiamin;Du Jinghong;Zhao Wenchao;Rong Xuequan;Faculty of Materials Science and Engineering;Kunming University of Science and Technology;Key Laboratory of Advance Materials of Yunnan Province;Key Laboratory of Advance Materials of Precious-Nonferrous Metals;Ministry of Education;
..............page:43-48
Chemical and electrical properties of（NH4）2S passivated GaSb surface
Tao Dongyan;Cheng Yu;Liu Jingming;Su Jie;Liu Tong;Yang Fengyun;Wang Fenghua;Cao Kewei;Dong Zhiyuan;Zhao Youwen;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;
Tao Dongyan;Cheng Yu;Liu Jingming;Su Jie;Liu Tong;Yang Fengyun;Wang Fenghua;Cao Kewei;Dong Zhiyuan;Zhao Youwen;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:49-53
Dopingless impact ionization MOS(DL-IMOS)—a remedy for complex process flow
Sangeeta Singh;P.N.Kondekar;Department of Electronics and Communication Engineering;PDPM-Indian Institute of Information Technology;Design and Manufacturing Jabalpur Jabalpur;MP;India;
Sangeeta Singh;P.N.Kondekar;Department of Electronics and Communication Engineering;PDPM-Indian Institute of Information Technology;Design and Manufacturing Jabalpur Jabalpur;MP;India;
..............page:54-62
Numerical simulation of the effect of the free carrier motilities on light-soaked a-Si:H p–i–n solar cell
L.Ayat;A.F.Bouhdjar;AF.Meftah;N.Sengouga;Laboratory of Semiconductor Devices Physics;Physics Department;University of Béchar;Faculté des Sciences de la matière;Laboratoire des Matériaux Semi-conducteurs et Métalliques;Université Mohammed Khider;
L.Ayat;A.F.Bouhdjar;AF.Meftah;N.Sengouga;Laboratory of Semiconductor Devices Physics;Physics Department;University of Béchar;Faculté des Sciences de la matière;Laboratoire des Matériaux Semi-conducteurs et Métalliques;Université Mohammed Khider;
..............page:63-72
Hydrolysis preparation of the compact TiO2 layer using metastable TiCl4 isopropanol/water solution for inorganic–organic hybrid heterojunction perovskite solar cells
Dai Xiaoyan;Shi Chengwu;Zhang Yanru;Wu Ni;School of Chemistry and Chemical Engineering;Hefei University of Technology;Key Laboratory of Novel Thin Film Solar Cells;Chinese Academy of Sciences;
Dai Xiaoyan;Shi Chengwu;Zhang Yanru;Wu Ni;School of Chemistry and Chemical Engineering;Hefei University of Technology;Key Laboratory of Novel Thin Film Solar Cells;Chinese Academy of Sciences;
..............page:73-76
A new method for calculation of majority carrier compensation in photovoltaics
Zhang Rumin;Liu Peng;Liu Dijun;Su Guobin;School of Electronic and Information Engineering;Beihang University;State Key Laboratory of Wireless Mobile Communications;China Academy of Telecommunications Technology;Leadcore Technology Co.Ltd.;
Zhang Rumin;Liu Peng;Liu Dijun;Su Guobin;School of Electronic and Information Engineering;Beihang University;State Key Laboratory of Wireless Mobile Communications;China Academy of Telecommunications Technology;Leadcore Technology Co.Ltd.;
..............page:77-81
Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress
Shi Lei;Feng Shiwei;Liu Kun;Zhang Yamin;College of Electronic Information and Control Engineering;Beijing University of Technology;
Shi Lei;Feng Shiwei;Liu Kun;Zhang Yamin;College of Electronic Information and Control Engineering;Beijing University of Technology;
..............page:82-86
Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications
Pongthavornkamol Tiwat;Pang Lei;Wang Xinhua;Huang Sen;Liu Guoguo;Yuan Tingting;Liu Xinyu;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
Pongthavornkamol Tiwat;Pang Lei;Wang Xinhua;Huang Sen;Liu Guoguo;Yuan Tingting;Liu Xinyu;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:87-93
Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT
Lei Yong;Lu Hai;School of Physics and Optoelectronic Engineering;Nanjing University of Information Science and Technology;School of Electronic Science and Engineering;Nanjing University;
Lei Yong;Lu Hai;School of Physics and Optoelectronic Engineering;Nanjing University of Information Science and Technology;School of Electronic Science and Engineering;Nanjing University;
..............page:94-97
High performance AlGaN/GaN HEMTs with AlN/SiN_x passivation
Tan Xin;Lü Yuanjie;Gu Guodong;Wang Li;Dun Shaobo;Song Xubo;Guo Hongyu;Yin Jiayun;Cai Shujun;Feng Zhihong;National Key Laboratory of Application Specific Integrated Circuit;Hebei Semiconductor Research Institute;China National Defense Sciences Technology Information Center;
Tan Xin;Lü Yuanjie;Gu Guodong;Wang Li;Dun Shaobo;Song Xubo;Guo Hongyu;Yin Jiayun;Cai Shujun;Feng Zhihong;National Key Laboratory of Application Specific Integrated Circuit;Hebei Semiconductor Research Institute;China National Defense Sciences Technology Information Center;
..............page:98-101
Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching
Li Xiang;Zhao Degang;Jiang Desheng;Chen Ping;Liu Zongshun;Zhu Jianjun;Shi Ming;Zhao Danmei;Liu Wei;Zhang Shuming;Yang Hui;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;
Li Xiang;Zhao Degang;Jiang Desheng;Chen Ping;Liu Zongshun;Zhu Jianjun;Shi Ming;Zhao Danmei;Liu Wei;Zhang Shuming;Yang Hui;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;
..............page:102-106
Frequency stability of an RF oscillator with an MEMS-based encapsulated resonator
Peng Bohua;Luo Wei;Zhao Jicong;Yuan Quan;Yang Jinling;Yang Fuhua;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory of Transducer Technology;
Peng Bohua;Luo Wei;Zhao Jicong;Yuan Quan;Yang Jinling;Yang Fuhua;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory of Transducer Technology;
..............page:107-111
A 0.75 dB NF LNA in GaAs pHEMT utilizing gate–drain capacitance and gradual inductor
Wang Shuo;Zheng Xinnian;Yang Hao;Zhang Haiying;Institute of Microelectronics;Chinese Academy of Sciences;
Wang Shuo;Zheng Xinnian;Yang Hao;Zhang Haiying;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:112-117
Novel pre-equalization transimpedance amplifier for 10 Gb/s optical interconnects
Song Qiwei;Mao Luhong;Xie Sheng;Kang Yuzhuo;School of Electronic Information Engineering;Tianjin University;Inspur Electronic Information Industry Co.Ltd;
Song Qiwei;Mao Luhong;Xie Sheng;Kang Yuzhuo;School of Electronic Information Engineering;Tianjin University;Inspur Electronic Information Industry Co.Ltd;
..............page:118-122
LTE turbo decoder design
Yang Le;Ye Tianchun;Wu Bin;Zhang Ruiqi;Institute of Microelectronics;Chinese Academy of Sciences;
Yang Le;Ye Tianchun;Wu Bin;Zhang Ruiqi;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:123-127
A CMOS analog front-end chip for amperometric electrochemical sensors
Li Zhichao;Liu Yuntao;Chen Min;Xiao Jingbo;Chen Jie;Institute of Microelectronics;Chinese Academy of Sciences;College of Information and Communication Engineering;Harbin Engineering University;
Li Zhichao;Liu Yuntao;Chen Min;Xiao Jingbo;Chen Jie;Institute of Microelectronics;Chinese Academy of Sciences;College of Information and Communication Engineering;Harbin Engineering University;
..............page:128-133
Design of a reliable PUF circuit based on R–2R ladder digital-to-analog convertor
Wang Pengjun;Zhang Xuelong;Zhang Yuejun;Li Jianrui;Institute of Circuits and Systems;Ningbo University;
Wang Pengjun;Zhang Xuelong;Zhang Yuejun;Li Jianrui;Institute of Circuits and Systems;Ningbo University;
..............page:134-137
A current-mode DAC unit circuit with smooth transition
Ye Yidie;Xia Yinshui;Faculty of Electrical Engineering and Computer Science;Ningbo University;
Ye Yidie;Xia Yinshui;Faculty of Electrical Engineering and Computer Science;Ningbo University;
..............page:138-143
Design and test of a capacitance detection circuit based on a transimpedance amplifier
Mu Linfeng;Zhang Wendong;He Changde;Zhang Rui;Song Jinlong;Xue Chenyang;Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;North University of China;Key Laboratory of Science and Technology on Electronic Test & Measurement;North University of China;
Mu Linfeng;Zhang Wendong;He Changde;Zhang Rui;Song Jinlong;Xue Chenyang;Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;North University of China;Key Laboratory of Science and Technology on Electronic Test & Measurement;North University of China;
..............page:144-151
Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer
Luan Xiaodong;Liu Yuling;Niu Xinhuan;Wang Juan;Institute of Microelectronics;Hebei University of Technology;
Luan Xiaodong;Liu Yuling;Niu Xinhuan;Wang Juan;Institute of Microelectronics;Hebei University of Technology;
..............page:152-157
Effect of FA/O complexing agents and H2O2 on chemical mechanical polishing of ruthenium in weakly alkaline slurry
Duan Bo;An Weijing;Zhou Jianwei;Wang Shuai;Institute of Microelectronics;Hebei University of Technology;
Duan Bo;An Weijing;Zhou Jianwei;Wang Shuai;Institute of Microelectronics;Hebei University of Technology;
..............page:158-162