1674-4926
2015 Issue 6
Electrical properties of 70Ge:Ga near the metal–insulator transition
M Errai;A El kaaouachi;H El idrissi;Laboratoire MSTI;Ecole Supérieure de tecchnologie d’Agadir;B.P: 33/S University Ibn Zohr;Faculty of Sciences;Agadir;Morocco;Laboratoire Electronique;électrotechnique;Automatique et Traitement de l’Information;Département Génie Electrique;Faculté des Sciences et Techniques de Mohammedia;Université Hassan II Mohammedia Casablanca;BP 146 Quartier Yasmina;Mohammedia;
M Errai;A El kaaouachi;H El idrissi;Laboratoire MSTI;Ecole Supérieure de tecchnologie d’Agadir;B.P: 33/S University Ibn Zohr;Faculty of Sciences;Agadir;Morocco;Laboratoire Electronique;électrotechnique;Automatique et Traitement de l’Information;Département Génie Electrique;Faculté des Sciences et Techniques de Mohammedia;Université Hassan II Mohammedia Casablanca;BP 146 Quartier Yasmina;Mohammedia;
..............page:5-9
Leakage of photocurrent: an alternative view on I–V curves of solar cells
Zhou Taofei;Xiong Kanglin;Zhang Min;Liu Lei;Tian Feifei;Zhang Zhiqiang;Gu Hong;Huang Jun;Wang Jianfeng;Dong Jianrong;Xu Ke;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;
Zhou Taofei;Xiong Kanglin;Zhang Min;Liu Lei;Tian Feifei;Zhang Zhiqiang;Gu Hong;Huang Jun;Wang Jianfeng;Dong Jianrong;Xu Ke;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;
..............page:10-14
Sub-stoichiometric functionally graded titania fibres for water-splitting applications
Vaia Adamaki;A.Sergejevs;C.Clarke;F.Clemens;F.Marken;C.R.Bowen;Mechanical Engineering Department;University of Bath;Electronic and Electrical Engineering Department;University of Bath;High Performance Ceramics;EMPA Materials Science and Technology;Chemistry Department;University of Bath;
Vaia Adamaki;A.Sergejevs;C.Clarke;F.Clemens;F.Marken;C.R.Bowen;Mechanical Engineering Department;University of Bath;Electronic and Electrical Engineering Department;University of Bath;High Performance Ceramics;EMPA Materials Science and Technology;Chemistry Department;University of Bath;
..............page:15-20
Crystallization kinetics of Sn40Se60 thin films for phase change memory applications
Joshua M.Kundu;Patrick M.Karimi;Walter K.Njoroge;Department of Physics;Kenyatta University;
Joshua M.Kundu;Patrick M.Karimi;Walter K.Njoroge;Department of Physics;Kenyatta University;
..............page:21-24
Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon
Zhao Danmei;Zhao Degang;Jiang Desheng;Liu Zongshun;Zhu Jianjun;Chen Ping;Liu Wei;Li Xiang;Shi Ming;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;
Zhao Danmei;Zhao Degang;Jiang Desheng;Liu Zongshun;Zhu Jianjun;Chen Ping;Liu Wei;Li Xiang;Shi Ming;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:25-28
Effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si
Feng Shuai;Zhao Lichuan;Zhang Qingzhu;Yang Pengpeng;Tang Zhaoyun;Yan Jiang;Wu Cinan;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;College of Big Data and Information Engineering;Guizhou University;
Feng Shuai;Zhao Lichuan;Zhang Qingzhu;Yang Pengpeng;Tang Zhaoyun;Yan Jiang;Wu Cinan;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;College of Big Data and Information Engineering;Guizhou University;
..............page:29-32
β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering
Li Hong;Pu Hongbin;Zheng Chunlei;Chen Zhiming;Department of Electronic Engineering;Xi’an University of Technology;
Li Hong;Pu Hongbin;Zheng Chunlei;Chen Zhiming;Department of Electronic Engineering;Xi’an University of Technology;
..............page:33-38
Synthesis and electroluminescence properties of tris-[5-choloro-8-hydroxyquinoline]aluminum Al（5-Clq）3
Rahul Kumar;Parag Bhargava;Ritu Srivastava;Priyanka Tyagi;Indian Institute of Technology Bombay;National Physical Laboratory;
Rahul Kumar;Parag Bhargava;Ritu Srivastava;Priyanka Tyagi;Indian Institute of Technology Bombay;National Physical Laboratory;
..............page:39-42
Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/Ga N material system
Suranjana Banerjee;Monojit Mitra;Academy of Technology;West Bengal University of Technology;Indian Institute of Engineering Science and Technology;
Suranjana Banerjee;Monojit Mitra;Academy of Technology;West Bengal University of Technology;Indian Institute of Engineering Science and Technology;
..............page:43-50
Analysis of charge density and Fermi level of Al In Sb/In Sb single-gate high electron mobility transistor
S.Theodore Chandra;N.B.Balamurugan;M.Bhuvaneswari;N.Anbuselvan;N.Mohankumar;National Instruments Electronics Laboratory;Department of ECE;Thiagarajar College of Engineering;Department of ECE;SKP Engineering College;
S.Theodore Chandra;N.B.Balamurugan;M.Bhuvaneswari;N.Anbuselvan;N.Mohankumar;National Instruments Electronics Laboratory;Department of ECE;Thiagarajar College of Engineering;Department of ECE;SKP Engineering College;
..............page:51-56
Numerical investigation of a double-junction a:Si Ge thin-film solar cell including the multi-trench region
K.Kacha;F.Djeffal;H.Ferhati;D.Arar;M.Meguellati;LEA;Department of Electronics;University of Batna;LEPCM;University of Batna;
K.Kacha;F.Djeffal;H.Ferhati;D.Arar;M.Meguellati;LEA;Department of Electronics;University of Batna;LEPCM;University of Batna;
..............page:57-61
Si/Si C-based DD hetero-structure IMPATTs as MM-wave power-source:a generalized large-signal analysis
Moumita Mukherjee;P.R.Tripathy;S.P.Pati;Centre for MM-wave Semiconductor Devices and Systems;DRDO;Hi-Tech College of Engineering;Former Professor of Sambalpur University;
Moumita Mukherjee;P.R.Tripathy;S.P.Pati;Centre for MM-wave Semiconductor Devices and Systems;DRDO;Hi-Tech College of Engineering;Former Professor of Sambalpur University;
..............page:62-67
Comparison of on-wafer calibrations for THz In P-based PHEMTs applications
Wang Zhiming;Huang Hui;Hu Zhifu;Zhao Zhuobin;Wang Xudong;Luo Xiaobin;Liu Jun;Yang Songyuan;Lü Xin;Beijing Key Laboratory of Millimeter Wave and Terahertz Technology;Beijing Institute of Technology;National Institute of Metrology;Hebei Semiconductor Research Institute;
Wang Zhiming;Huang Hui;Hu Zhifu;Zhao Zhuobin;Wang Xudong;Luo Xiaobin;Liu Jun;Yang Songyuan;Lü Xin;Beijing Key Laboratory of Millimeter Wave and Terahertz Technology;Beijing Institute of Technology;National Institute of Metrology;Hebei Semiconductor Research Institute;
..............page:68-71
Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates
Zhao Qifeng;Zhuang Yiqi;Bao Junlin;Hu Wei;School of Microelectronics;Xidian University;School of Mechano-Electronic Engineering;Xidian University;
Zhao Qifeng;Zhuang Yiqi;Bao Junlin;Hu Wei;School of Microelectronics;Xidian University;School of Mechano-Electronic Engineering;Xidian University;
..............page:72-75
Estimation of the optical loss in bent-waveguide superluminescent diodes by an analytical method
An Qi;Jin Peng;Wang Zhanguo;China Electronics Standardization Institute;Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices;Institute of Semiconductors;Chinese Academy of Sciences;
An Qi;Jin Peng;Wang Zhanguo;China Electronics Standardization Institute;Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:76-79
Micro packaged MEMS pressure sensor for intracranial pressure measurement
Liu Xiong;Yao Yan;Ma Jiahao;Zhang Yanhang;Wang Qian;Zhang Zhaohua;Ren Tianling;Beijing Institute of Nanoenergy and Nanosystems;Chinese Academy of Sciences;Institute of Microelectronics;Tsinghua University;
Liu Xiong;Yao Yan;Ma Jiahao;Zhang Yanhang;Wang Qian;Zhang Zhaohua;Ren Tianling;Beijing Institute of Nanoenergy and Nanosystems;Chinese Academy of Sciences;Institute of Microelectronics;Tsinghua University;
..............page:80-83
Characteristics of HfO2/Hf-based bipolar resistive memories
Bi Jinshun;Han Zhengsheng;Institute of Microelectronics;Chinese Academy of Sciences;
Bi Jinshun;Han Zhengsheng;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:84-88
Thermal simulation of flexible LED package enhanced with copper pillars
Liu Yang;Stanley Y.Y.Leung;Cell K.Y.Wong;Cadmus A.Yuan;Zhang Guoqi;Sun Fenglian;School of Material Science and Engineering;Harbin University of Science and Technology;Beijing Research Centre;Delft University of Technology;State Key Laboratory of Solid State Lighting;Institute of Semiconductors;Chinese Academy of Sciences;DIMES Center for SSL Technologies;Delft University of Technology;
Liu Yang;Stanley Y.Y.Leung;Cell K.Y.Wong;Cadmus A.Yuan;Zhang Guoqi;Sun Fenglian;School of Material Science and Engineering;Harbin University of Science and Technology;Beijing Research Centre;Delft University of Technology;State Key Laboratory of Solid State Lighting;Institute of Semiconductors;Chinese Academy of Sciences;DIMES Center for SSL Technologies;Delft University of Technology;
..............page:89-92
Direct-bonded four-junction Ga As solar cells
Shen Jingman;Sun Lijie;Chen Kaijian;Zhang Wei;Wang Xunchun;Center for Photovoltaic Engineering;Shanghai Institute of Space Power Sources;
Shen Jingman;Sun Lijie;Chen Kaijian;Zhang Wei;Wang Xunchun;Center for Photovoltaic Engineering;Shanghai Institute of Space Power Sources;
..............page:93-96
Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy
Xu Xiangming;Huang Jingfeng;Yu Han;Qian Wensheng;Zhou Zhengliang;Han Bo;Wang Yong;Wang Pengfei;David Wei Zhang;State Key Laboratory of ASIC and System;School of Microelectronics;Fudan University;HuaHong Grace Semiconductor Manufacturing Corporation;School of Computer and Information Engineering;Fuyang Teachers College;
Xu Xiangming;Huang Jingfeng;Yu Han;Qian Wensheng;Zhou Zhengliang;Han Bo;Wang Yong;Wang Pengfei;David Wei Zhang;State Key Laboratory of ASIC and System;School of Microelectronics;Fudan University;HuaHong Grace Semiconductor Manufacturing Corporation;School of Computer and Information Engineering;Fuyang Teachers College;
..............page:97-102
Propagation delay and power dissipation for different aspect ratio of single-walled carbon nanotube bundled TSV
Tanu Goyal;Manoj Kumar Majumder;Brajesh Kumar Kaushik;Department of ECE;IEC College of Engineering and Technology;Department of E&CE;Indian Institute of Technology Roorkee;
Tanu Goyal;Manoj Kumar Majumder;Brajesh Kumar Kaushik;Department of ECE;IEC College of Engineering and Technology;Department of E&CE;Indian Institute of Technology Roorkee;
..............page:103-108
Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes
Yao Changfei;Zhou Ming;Luo Yunsheng;Xu Conghai;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute;Department of Microwave and Millimeter Wave Modules;Nanjing Electronic Devices Institute;
Yao Changfei;Zhou Ming;Luo Yunsheng;Xu Conghai;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute;Department of Microwave and Millimeter Wave Modules;Nanjing Electronic Devices Institute;
..............page:109-113
A novel dual-feed low-dropout regulator
Duan Zhikui;Hu Jianguo;Ding Yi;Lu Chong;Ding Yanyu;Wang Deming;Tan Hongzhou;School of Information Science and Technology;Sun Yat-Sen University;
Duan Zhikui;Hu Jianguo;Ding Yi;Lu Chong;Ding Yanyu;Wang Deming;Tan Hongzhou;School of Information Science and Technology;Sun Yat-Sen University;
..............page:114-118
A high linearity X-band SOI CMOS digitally-controlled phase shifter
Chen Liang;Chen Xinyu;Zhang Youtao;Li Zhiqun;Yang Lei;Nanjing Electronic Devices Institute;Guobo Electronics Co. Ltd;RF & OE IC Institute;Southeast University;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;
Chen Liang;Chen Xinyu;Zhang Youtao;Li Zhiqun;Yang Lei;Nanjing Electronic Devices Institute;Guobo Electronics Co. Ltd;RF & OE IC Institute;Southeast University;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;
..............page:119-126
A low-power CMOS WIA-PA transceiver with a high sensitivity GFSK demodulator
Yang Tao;Jiang Yu;Liu Shengyou;Guo Guiliang;Yan Yuepeng;Institute of Microelectronics;Chinese Academy of Sciences;
Yang Tao;Jiang Yu;Liu Shengyou;Guo Guiliang;Yan Yuepeng;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:127-134
A high speed direct digital frequency synthesizer based on multi-channel structure
Yuan Ling;Zhang Qiang;Shi Yin;Institute of Semiconductors;Chinese Academy of Sciences;
Yuan Ling;Zhang Qiang;Shi Yin;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:135-139
A 320 mV,6 kb subthreshold 10T SRAM employing voltage lowering techniques
Cai Jiangzheng;Zhang Sumin;Yuan Jia;Shang Xinchao;Chen Liming;Hei Yong;Institute of Microelectronics;Chinese Academy of Sciences;
Cai Jiangzheng;Zhang Sumin;Yuan Jia;Shang Xinchao;Chen Liming;Hei Yong;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:140-145
14-bit 100 MS/s 121 mW pipelined ADC
Chen Yongzhen;Chen Chixiao;Feng Zemin;Ye Fan;Ren Junyan;State Key Laboratory of ASIC and System;Fudan University;
Chen Yongzhen;Chen Chixiao;Feng Zemin;Ye Fan;Ren Junyan;State Key Laboratory of ASIC and System;Fudan University;
..............page:146-151
A fully integrated CMOS VCXO-IC with low phase noise, wide tuning range and high tuning linearity
Yang Yanjun;Zeng Yun;School of Physics and Electronics;Hunan University;
Yang Yanjun;Zeng Yun;School of Physics and Electronics;Hunan University;
..............page:152-159
A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technology
Zhang Jincan;Zhang Yuming;Lü Hongliang;Zhang Yimen;Liu Bo;Zhang Leiming;Xiang Fei;Electrical Engineering College;Henan University of Science and Technology;School of Microelectronics;Xidian University;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;
Zhang Jincan;Zhang Yuming;Lü Hongliang;Zhang Yimen;Liu Bo;Zhang Leiming;Xiang Fei;Electrical Engineering College;Henan University of Science and Technology;School of Microelectronics;Xidian University;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;
..............page:160-164
Benzotriazole removal on post-Cu CMP cleaning
Tang Jiying;Liu Yuling;Sun Ming;Fan Shiyan;and Li Yan;Institute of Microelectronics;Hebei University of Technology;Electrical Engineering Department;Tianjin Metallurgical Vocation-Technology Institute;
Tang Jiying;Liu Yuling;Sun Ming;Fan Shiyan;and Li Yan;Institute of Microelectronics;Hebei University of Technology;Electrical Engineering Department;Tianjin Metallurgical Vocation-Technology Institute;
..............page:165-168