1674-4926
2015 Issue 4
The effect of multi-intermediate bands on the behavior of an InAs1-xNx/GaAs（1-y）Sby quantum dot solar cell
Abou El-Maaty M.Aly;A.Nasr;Power Electronics and Energy Conversion Department;ERI;NRCB;College of Computer;Qassim University;Radiation Engineering Department;NCRRT;Atomic Energy Authority;
Abou El-Maaty M.Aly;A.Nasr;Power Electronics and Energy Conversion Department;ERI;NRCB;College of Computer;Qassim University;Radiation Engineering Department;NCRRT;Atomic Energy Authority;
..............page:5-10
Analytical formulas for carrier density and Fermi energy in semiconductors with a tight-binding band
Cao Wenhan;Department of Communication Science and Engineering;Fudan University;
Cao Wenhan;Department of Communication Science and Engineering;Fudan University;
..............page:11-14
An ab initio study of strained two-dimensional MoSe2
Bahniman Ghosh;Naval Kishor;Microelectronics Research Center;10100 Burnet Road;Bldg. 160;University of Texas at Austin;Department of Electrical Engineering;Indian Institute of Technology Kanpur;
Bahniman Ghosh;Naval Kishor;Microelectronics Research Center;10100 Burnet Road;Bldg. 160;University of Texas at Austin;Department of Electrical Engineering;Indian Institute of Technology Kanpur;
..............page:15-19
Spin synthesis of monolayer of SiO2 thin films
S.S.Shinde;S.Park;J.Shin;Korea Research Institute of Standards and Science;
S.S.Shinde;S.Park;J.Shin;Korea Research Institute of Standards and Science;
..............page:20-29
GaN grown on nano-patterned sapphire substrates
Kong Jing;Feng Meixin;Cai Jin;Wang Hui;Wang Huaibing;Yang Hui;Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
Kong Jing;Feng Meixin;Cai Jin;Wang Hui;Wang Huaibing;Yang Hui;Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
..............page:30-33
The effects of N-doping and oxygen vacancy on the electronic structure and conductivity of PbTiO3
Niu Peijiang;Yan Jinliang;Meng Delan;School of Physics and Optoelectronic Engineering;Ludong University;
Niu Peijiang;Yan Jinliang;Meng Delan;School of Physics and Optoelectronic Engineering;Ludong University;
..............page:34-39
Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate
Subhra Chowdhury;Swarnabha Chattaraj;Dhrubes Biswas;Advanced Technology Development Center;Indian Institute of Technology Kharagpur;Electronics and Electrical Communication Engineering;Indian Institute of Technology Kharagpur;
Subhra Chowdhury;Swarnabha Chattaraj;Dhrubes Biswas;Advanced Technology Development Center;Indian Institute of Technology Kharagpur;Electronics and Electrical Communication Engineering;Indian Institute of Technology Kharagpur;
..............page:40-43
Top gate ZnO–Al2O3 thin film transistors fabricated using a chemical bath deposition technique
Paragjyoti Gogoi;Rajib Saikia;Sanjib Changmai;Thin Film Laboratory;Department of Physics;Sibsagar College;
Paragjyoti Gogoi;Rajib Saikia;Sanjib Changmai;Thin Film Laboratory;Department of Physics;Sibsagar College;
..............page:44-47
Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs
Mini Bhartia;Arun Kumar Chatterjee;Electronics and Communication Department;Thapar Institute of Engineering and Technology;
Mini Bhartia;Arun Kumar Chatterjee;Electronics and Communication Department;Thapar Institute of Engineering and Technology;
..............page:48-54
The effects of drain scatterings on the electron transport properties of strained-Si diodes with ballistic and non-ballistic channels
Yasenjan Ghupur;Mamtimin Geni;Mamatrishat Mamat;Abudukelimu Abudureheman;School of Mechanical Engineering;Xinjiang University;School of Physics Science and Technology;Xinjiang University;UMC Japan;
Yasenjan Ghupur;Mamtimin Geni;Mamatrishat Mamat;Abudukelimu Abudureheman;School of Mechanical Engineering;Xinjiang University;School of Physics Science and Technology;Xinjiang University;UMC Japan;
..............page:55-60
Collector optimization for improving the product of the breakdown voltage–cutoff frequency in SiGe HBT
Fu Qiang;Zhang Wanrong;Jin Dongyue;Zhao Yanxiao;Zhang Lianghao;College of Electronic Information and Control Engineering;Beijing University of Technology;College of Physics;Liaoning University;
Fu Qiang;Zhang Wanrong;Jin Dongyue;Zhao Yanxiao;Zhang Lianghao;College of Electronic Information and Control Engineering;Beijing University of Technology;College of Physics;Liaoning University;
..............page:61-64
An analysis of the dynamic avalanche mechanism of an improved FCE diode with a deep p~+ adjusting region
Wang Cailin;Zhang Lei;Xi’an University of Technology;
Wang Cailin;Zhang Lei;Xi’an University of Technology;
..............page:65-69
Device parameter optimization for sub-20nm node HK/MG-last bulk FinFETs
Xu Miao;Yin Huaxiang;Zhu Huilong;Ma Xiaolong;Xu Weijia;Zhang Yongkui;Zhao Zhiguo;Luo Jun;Yang Hong;Li Chunlong;Meng Lingkuan;Hong Peizhen;Xiang Jinjuan;Gao Jianfeng;Xu Qiang;Xiong Wenjuan;Wang Dahai;Li Junfeng;Zhao Chao;Chen Dapeng;Yang Simon;Ye Tianchun;Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
Xu Miao;Yin Huaxiang;Zhu Huilong;Ma Xiaolong;Xu Weijia;Zhang Yongkui;Zhao Zhiguo;Luo Jun;Yang Hong;Li Chunlong;Meng Lingkuan;Hong Peizhen;Xiang Jinjuan;Gao Jianfeng;Xu Qiang;Xiong Wenjuan;Wang Dahai;Li Junfeng;Zhao Chao;Chen Dapeng;Yang Simon;Ye Tianchun;Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:70-73
Beam multiplexing of diode laser arrays
Liu Ruicong;Liu Yuanyuan;Chen Xue;Yang Fuhua;Institute of Semiconductors;Chinese Academy of Sciences;
Liu Ruicong;Liu Yuanyuan;Chen Xue;Yang Fuhua;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:74-77
Influence of selenium evaporation temperature on the structure of Cu2ZnSnSe4 thin film deposited by a co-evaporation process
Sun Ding;Xu Shengzhi;Zhang Li;Chen Ze;Ge Yang;Wang Ning;Liang Xuejiao;Wei Changchun;Zhao Ying;Zhang Xiaodan;Institute of Photo Electronics Thin Film Devices and Technology;Nankai University;Key Laboratory of Photoelectronic Thin Film Devices and Technology;
Sun Ding;Xu Shengzhi;Zhang Li;Chen Ze;Ge Yang;Wang Ning;Liang Xuejiao;Wei Changchun;Zhao Ying;Zhang Xiaodan;Institute of Photo Electronics Thin Film Devices and Technology;Nankai University;Key Laboratory of Photoelectronic Thin Film Devices and Technology;
..............page:78-81
Simulation of a high-efficiency silicon-based heterojunction solar cell
Liu Jian;Huang Shihua;He Lü;Physics Department;Zhejiang Normal University;
Liu Jian;Huang Shihua;He Lü;Physics Department;Zhejiang Normal University;
..............page:82-89
InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells
Zhao Yongming;Dong Jianrong;Li Kuilong;Sun Yurun;Zeng Xulu;He Yang;Yu Shuzhen;Yang Hui;Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
Zhao Yongming;Dong Jianrong;Li Kuilong;Sun Yurun;Zeng Xulu;He Yang;Yu Shuzhen;Yang Hui;Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
..............page:90-93
The design and analysis of a MEMS electrothermal actuator
Wang Suocheng;Hao Yongping;Liu Shuangjie;Technology Center of CAD/CAM;Shenyang Ligong University;
Wang Suocheng;Hao Yongping;Liu Shuangjie;Technology Center of CAD/CAM;Shenyang Ligong University;
..............page:94-98
Adder design using a 5-input majority gate in a novel “multilayer gate design paradigm” for quantum dot cellular automata circuits
Rohit Kumar;Bahniman Ghosh;Shoubhik Gupta;Department of Electrical Engineering;Indian Institute of Technology Kanpur;Microelectronics Research Center;10100;Burnet Road;Bldg. 160;University of Texas at Austin;University of Glasgow;
Rohit Kumar;Bahniman Ghosh;Shoubhik Gupta;Department of Electrical Engineering;Indian Institute of Technology Kanpur;Microelectronics Research Center;10100;Burnet Road;Bldg. 160;University of Texas at Austin;University of Glasgow;
..............page:99-107
The impact of process variations on input impedance and mitigation using a circuit technique in FinFET-based LNA
D.Suresh;K.K.Nagarajan;R.Srinivasan;ECE Department;Sri Sivasubramaniya Nadar College of Engineering;IT Department;Sri Sivasubramaniya Nadar College of Engineering;
D.Suresh;K.K.Nagarajan;R.Srinivasan;ECE Department;Sri Sivasubramaniya Nadar College of Engineering;IT Department;Sri Sivasubramaniya Nadar College of Engineering;
..............page:108-113
A monolithic 60GHz balanced low noise amplifier
Yang Xue;Yang Hao;Zhang Haiying;Zheng Xinnian;Dai Zhiwei;Li Zhiqiang;Du Zebao;Institute of Microelectronics;Chinese Academy of Sciences;
Yang Xue;Yang Hao;Zhang Haiying;Zheng Xinnian;Dai Zhiwei;Li Zhiqiang;Du Zebao;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:114-118
Design of a 1.12Gb/s 11.3mW low-voltage differential signaling transmitter
Su Yuan;Xiang Jixuan;Shen Xiaoying;Ye Fan;Ren Junyan;State Key Laboratory of ASIC & System;Microelectronics Science and Technology Innovation Platform;Fudan University;
Su Yuan;Xiang Jixuan;Shen Xiaoying;Ye Fan;Ren Junyan;State Key Laboratory of ASIC & System;Microelectronics Science and Technology Innovation Platform;Fudan University;
..............page:119-125
A low power, low noise figure quadrature demodulator for a 60GHz receiver in 65-nm CMOS technology
Najam Muhammad Amin;Wang Zhigong;Li Zhiqun;Li Qin;Liu Yang;Engineering Research Center of RF-ICs and RF-Systems;Ministry of Education;
Najam Muhammad Amin;Wang Zhigong;Li Zhiqun;Li Qin;Liu Yang;Engineering Research Center of RF-ICs and RF-Systems;Ministry of Education;
..............page:126-134
A low power wide tuning range baseband filter for multistandard transceivers
Geng Zhiqing;Wu Nanjian;School of Information and Electrical Engineering;Hebei University of Engineering;State Key Laboratory for Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;
Geng Zhiqing;Wu Nanjian;School of Information and Electrical Engineering;Hebei University of Engineering;State Key Laboratory for Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:135-146
A 12-bit 1MS/s SAR-ADC for multi-channel CdZnTe detectors
Liu Wei;Wei Tingcun;Li Bo;Guo Panjie;Hu Yongcai;School of Computer Science and Technology;Northwestern Polytechnical University;
Liu Wei;Wei Tingcun;Li Bo;Guo Panjie;Hu Yongcai;School of Computer Science and Technology;Northwestern Polytechnical University;
..............page:147-154
Two-dimensional parasitic capacitance extraction for integrated circuit with dual discrete geometric methods
Ren Dan;Xu Xiaoyu;Qu Hui;Ren Zhuoxiang;Institute of Microelectronics;Chinese Academy of Sciences;University of Chinese Academy of Sciences;Institute of Electrical Engineering;Chinese Academy of Sciences;
Ren Dan;Xu Xiaoyu;Qu Hui;Ren Zhuoxiang;Institute of Microelectronics;Chinese Academy of Sciences;University of Chinese Academy of Sciences;Institute of Electrical Engineering;Chinese Academy of Sciences;
..............page:155-161
Design of a low power 10 bit 300 ksps multi-channel SAR ADC for wireless sensor network applications
Hong Hui;Li Shiliang;Zhou Tao;Institute of Microelectronic CAD;Hangzhou Dianzi University;
Hong Hui;Li Shiliang;Zhou Tao;Institute of Microelectronic CAD;Hangzhou Dianzi University;
..............page:162-168
A high efficiency and power factor, segmented linear constant current LED driver
Li Yongyuan;Guo Wei;Zhu Zhangming;School of Microelectronics;Xidian University;
Li Yongyuan;Guo Wei;Zhu Zhangming;School of Microelectronics;Xidian University;
..............page:169-175
Analysis and optimization of TSV–TSV coupling in three-dimensional integrated circuits
Zhao Yingbo;Dong Gang;Yang Yintang;School of Microelectronics;Xidian University;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;
Zhao Yingbo;Dong Gang;Yang Yintang;School of Microelectronics;Xidian University;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;
..............page:176-183
A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs
Feng Shuai;Zhao Lichuan;Zhang Qingzhu;Yang Pengpeng;Tang Zhaoyun;Wu Cinan;Yan Jiang;College of Big Data and Information Engineering;Guizhou University;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
Feng Shuai;Zhao Lichuan;Zhang Qingzhu;Yang Pengpeng;Tang Zhaoyun;Wu Cinan;Yan Jiang;College of Big Data and Information Engineering;Guizhou University;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:184-188