1674-4926
2015 Issue 2
Monte-Carlo simulation studies of the effect of temperature and diameter variation on spin transport in Ⅱ–Ⅵ semiconductor nanowires
Sabiq Chishti;Bahniman Ghosh;Bhupesh Bishnoi;Department of Electrical Engineering;Indian Institute of Technology Kanpur;Microelectronics Research Center;10100 Burnet Road;University of Texas at Austin;
Sabiq Chishti;Bahniman Ghosh;Bhupesh Bishnoi;Department of Electrical Engineering;Indian Institute of Technology Kanpur;Microelectronics Research Center;10100 Burnet Road;University of Texas at Austin;
..............page:5-9
Quantum pump effect in a four-terminal mesoscopic structure
Wang Kaikai;SKLSM;Institute of Semiconductors;Chinese Academy of Sciences;
Wang Kaikai;SKLSM;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:10-13
Oriented colloidal-crystal thin films of polystyrene spheres via spin coating
S.S.Shinde;S.Park;Korea Research Institute of Standards and Science;
S.S.Shinde;S.Park;Korea Research Institute of Standards and Science;
..............page:14-21
Synthesis of metal oxide composite nanosheets and their pressure sensing properties
Muhammad Tariq Saeed Chani;Sher Bahadar Khan;Kh.S.Karimov;M.Abid;Abdullah M.Asiri;Kalsoom Akhtar;Center of Excellence for Advanced Materials Research;King Abdulaziz University;Chemistry Department;Faculty of Science;King Abdulaziz University;Interdisciplinary Research Center;COMSATS Institute of Information Technology;Physical Technical Institute of Academy of Sciences;Division of Nano Sciences and Department of Chemistry;Ewha Womans University;
Muhammad Tariq Saeed Chani;Sher Bahadar Khan;Kh.S.Karimov;M.Abid;Abdullah M.Asiri;Kalsoom Akhtar;Center of Excellence for Advanced Materials Research;King Abdulaziz University;Chemistry Department;Faculty of Science;King Abdulaziz University;Interdisciplinary Research Center;COMSATS Institute of Information Technology;Physical Technical Institute of Academy of Sciences;Division of Nano Sciences and Department of Chemistry;Ewha Womans University;
..............page:22-27
Electronic structures and phase transition characters of β-, P61-, P62- and δ-Si3N4 under extreme conditions: a density functional theory study
Chen Dong;Cang Yuping;Luo Yongsong;College of Physics and Electronic Engineering;Xinyang Normal University;
Chen Dong;Cang Yuping;Luo Yongsong;College of Physics and Electronic Engineering;Xinyang Normal University;
..............page:28-32
Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition
Cao Yong;Zhang Hailong;Liu Fengzhen;Zhu Meifang;Dong Gangqiang;University of Chinese Academy of Sciences;
Cao Yong;Zhang Hailong;Liu Fengzhen;Zhu Meifang;Dong Gangqiang;University of Chinese Academy of Sciences;
..............page:33-37
Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE
Cao Junsong;Lü Xin;Zhao Lubing;Qu Shuang;Gao Wei;State Key Laboratory of Solid-State Lighting;Beijing Solid-State Lighting Science and Technology Promotion Center;Institute of Semiconductors;Chinese Academy of Sciences;Shandong Inspur Huaguang Optoelectronics Co.;LTD.;
Cao Junsong;Lü Xin;Zhao Lubing;Qu Shuang;Gao Wei;State Key Laboratory of Solid-State Lighting;Beijing Solid-State Lighting Science and Technology Promotion Center;Institute of Semiconductors;Chinese Academy of Sciences;Shandong Inspur Huaguang Optoelectronics Co.;LTD.;
..............page:38-41
Enhanced photovoltaic performance in TiO2/P3HT hybrid solar cell by interface modification
Wang Duofa;Tao Haizheng;Zhao Xiujian;Ji Meiyan;Zhang Tianjin;State Key Laboratory of Silicate Materials for Architecture;Wuhan University of Technology;Faculty of Materials Science and Engineering;Hubei University;
Wang Duofa;Tao Haizheng;Zhao Xiujian;Ji Meiyan;Zhang Tianjin;State Key Laboratory of Silicate Materials for Architecture;Wuhan University of Technology;Faculty of Materials Science and Engineering;Hubei University;
..............page:42-45
Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect
Shoubhik Gupta;Bahniman Ghosh;Shiromani Balmukund Rahi;Department of Electrical Engineering;Indian Institute of Technology Kanpur;
Shoubhik Gupta;Bahniman Ghosh;Shiromani Balmukund Rahi;Department of Electrical Engineering;Indian Institute of Technology Kanpur;
..............page:46-51
A novel approach for justification of box-triangular germanium profile in SiGe HBTs
Gagan Khanduri;Brishbhan Panwar;Centre for Applied Research in Electronics;Indian Institute of Technology Delhi;
Gagan Khanduri;Brishbhan Panwar;Centre for Applied Research in Electronics;Indian Institute of Technology Delhi;
..............page:52-59
High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply
Pranav Kumar Asthana;Department of Electrical Engineering;Indian Institute of Technology Kanpur;
Pranav Kumar Asthana;Department of Electrical Engineering;Indian Institute of Technology Kanpur;
..............page:60-65
X-parameter measurement on a GaN HEMT device: complexity reduction study of load-pull characterization test setup
Wang Yelin;Department of Electronic Systems;Aalborg University;
Wang Yelin;Department of Electronic Systems;Aalborg University;
..............page:66-75
Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz
Wang Zhiming;Lü Xin;Luo Xiaobin;Cui Yuxing;Sun Xiguo;Mo Jianghui;Fu Xingchang;Li Liang;He Dawei;Beijing Key Laboratory of Millimeter Wave and Terahertz Technology;Beijing Institute of Technology;National Key Laboratory of Application Specific Integrated Circuit;Hebei Semiconductor Research Institute;
Wang Zhiming;Lü Xin;Luo Xiaobin;Cui Yuxing;Sun Xiguo;Mo Jianghui;Fu Xingchang;Li Liang;He Dawei;Beijing Key Laboratory of Millimeter Wave and Terahertz Technology;Beijing Institute of Technology;National Key Laboratory of Application Specific Integrated Circuit;Hebei Semiconductor Research Institute;
..............page:76-80
Frequency stability of InP HBT over 0.2 to 220 GHz
Zhou Zhijiang;Ren Kun;Liu Jun;Cheng Wei;Lu Haiyan;Sun Lingling;The Key Laboratory for RF Circuits and Systems of Ministry of Education;Hangzhou Dianzi University;Science and Technology on Monolithic Integrated Circuit and Modules Laboratory;Nanjing Electronic Devices Institute;
Zhou Zhijiang;Ren Kun;Liu Jun;Cheng Wei;Lu Haiyan;Sun Lingling;The Key Laboratory for RF Circuits and Systems of Ministry of Education;Hangzhou Dianzi University;Science and Technology on Monolithic Integrated Circuit and Modules Laboratory;Nanjing Electronic Devices Institute;
..............page:81-85
Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor
Liang Yongye;Kyungsoo Jang;S.Velumani;Cam Phu Thi Nguyen;Junsin Yi;National Key Laboratory for Electronic Measurement Technology;North University of China;College of Information and Communication Engineering;Sungkyunkwan University;Department of Electrical Engineering;CINVESTAV-IPN;Avenida IPN 6508;San Pedro Zacatenco;Mexico D.F.;
Liang Yongye;Kyungsoo Jang;S.Velumani;Cam Phu Thi Nguyen;Junsin Yi;National Key Laboratory for Electronic Measurement Technology;North University of China;College of Information and Communication Engineering;Sungkyunkwan University;Department of Electrical Engineering;CINVESTAV-IPN;Avenida IPN 6508;San Pedro Zacatenco;Mexico D.F.;
..............page:86-90
Novel 700 V high-voltage SOI LDMOS structure with folded drift region
Li Qi;Li Haiou;Zhai Jianghui;Tang Ning;Guangxi Experiment Center of Information Science;Guilin University of Electronic Technology;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
Li Qi;Li Haiou;Zhai Jianghui;Tang Ning;Guangxi Experiment Center of Information Science;Guilin University of Electronic Technology;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:91-95
A transmission line-type electrical model for tapered TSV considering MOS effect and frequency-dependent behavior
Liu Song;Shan Guangbao;Xie Chengmin;Du Xinrong;Department of Postgraduates;Xian Microelectronics Technology Research Institute;
Liu Song;Shan Guangbao;Xie Chengmin;Du Xinrong;Department of Postgraduates;Xian Microelectronics Technology Research Institute;
..............page:96-102
Ultralow specific on-resistance high voltage trench SOI LDMOS with enhanced RESURF effect
Xu Qing;Luo Xiaorong;Zhou Kun;Tian Ruichao;Wei Jie;Fan Yuanhang;Zhang Bo;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
Xu Qing;Luo Xiaorong;Zhou Kun;Tian Ruichao;Wei Jie;Fan Yuanhang;Zhang Bo;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:103-109
Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector
Zuo Zhiyuan;Xia Wei;Wang Gang;Xu Xiangang;School of Physics and Engineering;Sun Yat-Sen University;INSPUR GROUP Shandong Inspur Huaguang Optoelectronics Co.;Ltd;State Key Laboratory of Crystal Material;Shandong University;
Zuo Zhiyuan;Xia Wei;Wang Gang;Xu Xiangang;School of Physics and Engineering;Sun Yat-Sen University;INSPUR GROUP Shandong Inspur Huaguang Optoelectronics Co.;Ltd;State Key Laboratory of Crystal Material;Shandong University;
..............page:110-114
A novel hybrid Ⅲ–Ⅴ/silicon deformed micro-disk single-mode laser
Feng Peng;Zhang Yejin;Wang Yufei;Liu Lei;Zhang Siriguleng;Wang Hailing;Zheng Wanhua;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;Laboratory of Solid-State Optoelectronics Information Technology;Institute of Semiconductors;Chinese Academy of Sciences;
Feng Peng;Zhang Yejin;Wang Yufei;Liu Lei;Zhang Siriguleng;Wang Hailing;Zheng Wanhua;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;Laboratory of Solid-State Optoelectronics Information Technology;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:115-119
Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode
Wang Yongshun;Rui Li;Adnan Ghaffar;Wang Zaixing;Liu Chunjuan;School of Electronic and Information Engineering;Lanzhou Jiaotong University;
Wang Yongshun;Rui Li;Adnan Ghaffar;Wang Zaixing;Liu Chunjuan;School of Electronic and Information Engineering;Lanzhou Jiaotong University;
..............page:120-123
Low phase noise GaAs HBT VCO in Ka-band
Yan Ting;Zhang Yuming;Lü Hongliang;Zhang Yimen;Wu Yue;Liu Yifeng;School of Microelectronics;Xidian University;Key Laboratory of Wide-Gap Semiconductor Materials and Devices;
Yan Ting;Zhang Yuming;Lü Hongliang;Zhang Yimen;Wu Yue;Liu Yifeng;School of Microelectronics;Xidian University;Key Laboratory of Wide-Gap Semiconductor Materials and Devices;
..............page:124-127
Design of a high linearity and high gain accuracy analog baseband circuit for DAB receiver
Ma Li;Wang Zhigong;Xu Jian;Wu Yiqiang;Wang Junliang;Tian Mi;Chen Jianping;Institute of RF-and OE-ICs;Southeast University;
Ma Li;Wang Zhigong;Xu Jian;Wu Yiqiang;Wang Junliang;Tian Mi;Chen Jianping;Institute of RF-and OE-ICs;Southeast University;
..............page:128-133
A low power 11-bit 100 MS/s SAR ADC IP
Wang Ya;Xue Chunying;Li Fule;Zhang Chun;Wang Zhihua;Institute of Microelectronics;Tsinghua University;
Wang Ya;Xue Chunying;Li Fule;Zhang Chun;Wang Zhihua;Institute of Microelectronics;Tsinghua University;
..............page:134-138
A novel dimmable LED driver with soft-start and UVLO circuits
Jiang Jinguang;Tan Gaojian;Zhang Zeyu;Zhou Xifeng;GNSS Research Center;Wuhan University;School of Physics and Technology;Wuhan University;Suzhou Institute;Wuhan University;School of Electronic Information and Electrical Engineering;Shanghai Jiao Tong University;
Jiang Jinguang;Tan Gaojian;Zhang Zeyu;Zhou Xifeng;GNSS Research Center;Wuhan University;School of Physics and Technology;Wuhan University;Suzhou Institute;Wuhan University;School of Electronic Information and Electrical Engineering;Shanghai Jiao Tong University;
..............page:139-147
A 5 Gb/s low area CDR for embedded clock serial links
Li You;Lü Junsheng;Zhou Yumei;Zhao Jianzhong;Chen Yuhu;Zhang Feng;Institute of Microelectronics;Chinese Academy of Sciences;
Li You;Lü Junsheng;Zhou Yumei;Zhao Jianzhong;Chen Yuhu;Zhang Feng;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:148-154
Synergic effect of chelating agent and oxidant on chemical mechanical planarization
Liu Weijuan;Liu Yuling;Institute of Microelectronics;Hebei University of Technology;
Liu Weijuan;Liu Yuling;Institute of Microelectronics;Hebei University of Technology;
..............page:155-159
Non-ionic surfactant on particles removal in post-CMP cleaning
Sun Mingbin;Gao Baohong;Wang Chenwei;Miao Yingxin;Duan Bo;Tan Baimei;Institute of Microelectronics;Hebei University of Technology;
Sun Mingbin;Gao Baohong;Wang Chenwei;Miao Yingxin;Duan Bo;Tan Baimei;Institute of Microelectronics;Hebei University of Technology;
..............page:160-164