Preface
Lv Min;

..............page:5-6

Single event soft error in advanced integrated circuit
Zhao Yuanfu;Yue Suge;Zhao Xinyuan;Lu Shijin;Bian Qiang;Wang Liang;Sun Yongshu;Beijing Microelectronics Technology Institute;Beijing University of Aeronautics & Astronautics;

..............page:7-20

Modeling and simulation of single-event effect in CMOS circuit
Yue Suge;Zhang Xiaolin;Zhao Yuanfu;Liu Lin;Wang Hanning;Beijing University of Aeronautics & Astronautics;Beijing Microelectronics Technology Institute;

..............page:21-30

Line-edge roughness induced single event transient variation in SOI Fin FETs
Wu Weikang;An Xia;Jiang Xiaobo;Chen Yehua;Liu Jingjing;Zhang Xing;Huang Ru;Key Laboratory of Microelectronic Devices and Circuits;Institute of Microelectronics;Peking University;

..............page:31-35

Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices
Chen Yehua;An Xia;Wu Weikang;Zhang Yao;Liu Jingjing;Zhang Xing;Huang Ru;Peking University Shenzhen Graduate School;Key Laboratory of Microelectronic Devices and Circuits;Institute of Microelectronics;Peking University;School of Software and Microelectronics;Peking University;

..............page:36-39

Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening
Hong Xinhong;Pan Liyang;Zhang Wendi;Ji Dongmei;Wu Dong;Shen Chen;Xu Jun;Institute of Microelectronics;Tsinghua University;Cogenda Co Ltd;

..............page:40-44

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices
Wu Weikang;An Xia;Tan Fei;Feng Hui;Chen Yehua;Liu Jingjing;Zhang Xing;Huang Ru;Key Laboratory of Microelectronic Devices and Circuits;Institute of Microelectronics;Peking University;

..............page:45-49

The investigation on sensitive mapping of memory cell in microprocessor
Yu Chunqing;Fan Long;Yue Suge;Chen Maoxin;Du Shougang;Zheng Hongchao;Beijing Microelectronics Technology Institute;Beijing University of Aeronautics & Astronautics;

..............page:50-53

Multi-bit upset aware hybrid error-correction for cache in embedded processors
Dong Jiaqi;Qiu Keni;Zhang Weigong;Wang Jing;Wang Zhenzhen;Ding Lihua;College of Information Engineering;Capital Normal University;Beijing Center for Mathematics and Information Interdisciplinary Sciences;Beijing Key Laboratory of Electronic System Reliability and Prognostics;

..............page:54-58

Radiation effects on scientific CMOS image sensor
Zhao Yuanfu;Liu Liyan;Liu Xiaohui;Jin Xiaofeng;Li Xiang;Beijing Microelectronics Technology Institute;

..............page:59-63

Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture
Zhao Yuanfu;Zheng Hongchao;Fan Long;Yue Suge;Chen Maoxin;Du Shougang;Beijing Microelectronics Technology Institute;Beijing University of Aeronautics & Astronautics;

..............page:64-68

Impacts of test factors on heavy ion single event multiple-cell upsets in nanometer-scale SRAM
Luo Yinhong;Zhang Fengqi;Guo Hongxia;Xiao Yao;Zhao Wen;Ding Lili;Wang Yuanming;State Key Laboratory of Intense Pulsed Radiation Simulation and Effect;Northwest Institute of Nuclear Technology;

..............page:69-74

Predictions for proton and heavy ions induced SEUs in 65 nm SRAMs
Du Shougang;Yue Suge;Liu Hongxia;Fan Long;Zheng Hongchao;School of Microelectronics;Xidian University;Beijing Microelectronics Technology Institute;Beijing University of Aeronautics & Astronautics;

..............page:75-78

Analysis and RHBD technique of single event transients in PLLs
Han Zhiwei;Wang Liang;Yue Suge;Han Bing;Du Shougang;Beijing Microelectronics Technology Institute;Beijing University of Aeronautics & Astronautics;

..............page:79-82

The single-event effect evaluation technology for nano integrated circuits
Zheng Hongchao;Zhao Yuanfu;Yue Suge;Fan Long;Du Shougang;Chen Maoxin;Yu Chunqing;Beijing Microelectronics Technology Institute;Beijing University of Aeronautics & Astronautics;

..............page:83-87

A prediction technique for single-event effects on complex integrated circuits
Zhao Yuanfu;Yu Chunqing;Fan Long;Yue Suge;Chen Maoxin;Du Shougang;Zheng Hongchao;Beijing Microelectronics Technology Institute;Beijing University of Aeronautics & Astronautics;

..............page:88-92

Design of high performance and radiation hardened SPARC-V8 processor
Zhao Yuanfu;Qin Hui;Peng Heping;Yu Lixin;Beijing Microelectronics Technology Institute;

..............page:93-95

Low cost design of microprocessor EDAC circuit
Hao Li;Yu Lixin;Peng Heping;Zhuang Wei;Beijing Microelectronic Technology Institute;

..............page:96-100

Single event transient pulse width measurement of 65-nm bulk CMOS circuits
Yue Suge;Zhang Xiaolin;Zhao Xinyuan;Beijing University of Aeronautics & Astronautics;Beijing Microelectronics Technology Institute;

..............page:101-104

A four-interleaving HBD SRAM cell based on dual DICE for multiple node collection mitigation
Liu Lin;Yue Suge;Lu Shijin;Beijing Microelectronics Technology Institute;Beijing University of Aeronautics & Astronautics;

..............page:105-108

Experimental study on the single event effects in pulse width modulators by laser testing
Zhao Wen;Guo Xiaoqiang;Chen Wei;Guo Hongxia;Lin Dongsheng;Wang Hanning;Luo Yinhong;Ding Lili;Wang Yuanming;State Key Laboratory of Intense Pulsed Radiation Simulation and Effect;Northwest Institute of Nuclear Technology;Beijing Microelectronics Technology Institute;

..............page:109-113

Multi-bits error detection and fast recovery in RISC cores
Wang Jing;Yang Xing;Zhao Yuanfu;Zhang Weigong;Shen Jiao;Qiu Keni;College of Information Engineering;Capital Normal University;Beijing Engineering Research Center of High Reliable Embedded System;Beijing Microelectronics Technology Institute;Beijing Key Laboratory of Electronic System Reliability and Prognostics;

..............page:114-121

Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter
He Anlin;Guo Gang;Shi Shuting;Shen Dongjun;Liu Jiancheng;Cai Li;Fan Hui;China Institute of Atomic Energy;

..............page:122-126