1674-4926
2015 Issue 1
..............page:2
An analytic model to describe the relationship between conductance and frequency of heterojunction
Liu Changshi;Nan Hu College;Jiaxing University;
Liu Changshi;Nan Hu College;Jiaxing University;
..............page:5-9
Thermionic emission theory and diffusion theory applied to CdTe PV devices
Zhang Rumin;Ruan Yu;Li Zhengyi;Cheng Sichong;Liu Dijun;School of Electronic and Information Engineering;Beijing University of Aeronautics & Astronautics;State Key Laboratory of Wireless Mobile Communications;China Academy of Telecommunications Technology;Leadcore Technology Co;Ltd;Datang Telecom Technology & Industry Group;
Zhang Rumin;Ruan Yu;Li Zhengyi;Cheng Sichong;Liu Dijun;School of Electronic and Information Engineering;Beijing University of Aeronautics & Astronautics;State Key Laboratory of Wireless Mobile Communications;China Academy of Telecommunications Technology;Leadcore Technology Co;Ltd;Datang Telecom Technology & Industry Group;
..............page:10-14
First-principles study on electronic structure and conductivity of Sn-doped Ga1:375In0:625O3
Zhao Yinnü;Yan Jinliang;Xu Chengyang;Dean’s Office;Ludong University;School of Physics and Optoelectronic Engineering;Ludong University;
Zhao Yinnü;Yan Jinliang;Xu Chengyang;Dean’s Office;Ludong University;School of Physics and Optoelectronic Engineering;Ludong University;
..............page:15-20
The calculation of band gap energy in zinc oxide films
Ali Arif;Okba Belahssen;Salim Gareh;Said Benramache;Electrical Engineering Department;Faculty of Technology;University of Biskra;Algeria;Laboratoire de Physique des Couches Minces et Applications;Université de Biskra;Algeria;Mechanical Engineering Department;Faculty of Technology;University of Biskra;Algeria;
Ali Arif;Okba Belahssen;Salim Gareh;Said Benramache;Electrical Engineering Department;Faculty of Technology;University of Biskra;Algeria;Laboratoire de Physique des Couches Minces et Applications;Université de Biskra;Algeria;Mechanical Engineering Department;Faculty of Technology;University of Biskra;Algeria;
..............page:21-26
Structural, optical and electrical properties of zinc oxide thin films deposited by a spray pyrolysis technique
Yacine Aoun;Boubaker Benhaoua;Brahim Gasmi;Said Benramache;Mechanical Department;Faculty of Technology;University of Biskra;Biskra 07000;Algeria;VTRS Laboratory;Institute of Technology;University of El-Oued;El-Oued 39000;Algeria;Laboratoire de Physique des Couches Minces et Application;University of Biskra;Biskra 07000;Algeria;Material Sciences Department;Faculty of Science;University of Biskra;Biskra 07000;Algeria;
Yacine Aoun;Boubaker Benhaoua;Brahim Gasmi;Said Benramache;Mechanical Department;Faculty of Technology;University of Biskra;Biskra 07000;Algeria;VTRS Laboratory;Institute of Technology;University of El-Oued;El-Oued 39000;Algeria;Laboratoire de Physique des Couches Minces et Application;University of Biskra;Biskra 07000;Algeria;Material Sciences Department;Faculty of Science;University of Biskra;Biskra 07000;Algeria;
..............page:27-31
Effect of defects on the electronic properties of WS2 armchair nanoribbon
Bahniman Ghosh;Aayush Gupta;Microelectronics Research Center;10100;Burnet Road;Bldg. 160;University of Texas at Austin;Austin;TX;78758;USA;Department of Electrical Engineering;Indian Institute of Technology Kanpur;Kanpur 208016;India;
Bahniman Ghosh;Aayush Gupta;Microelectronics Research Center;10100;Burnet Road;Bldg. 160;University of Texas at Austin;Austin;TX;78758;USA;Department of Electrical Engineering;Indian Institute of Technology Kanpur;Kanpur 208016;India;
..............page:32-35
Preparation and thermal-sensitive characteristic of copper doped n-type silicon material
Fan Yanwei;Zhou Bukang;Wang Junhua;Chen Zhaoyang;Chang Aimin;Key Laboratory of Functional Materials and Devices for Special Environments of CAS;Xinjiang Key Laboratory of Electronic Information Materials and Devices;Xinjiang Technical Institute of Physics & Chemistry of CAS;University of Chinese Academy of Sciences;
Fan Yanwei;Zhou Bukang;Wang Junhua;Chen Zhaoyang;Chang Aimin;Key Laboratory of Functional Materials and Devices for Special Environments of CAS;Xinjiang Key Laboratory of Electronic Information Materials and Devices;Xinjiang Technical Institute of Physics & Chemistry of CAS;University of Chinese Academy of Sciences;
..............page:36-39
Redistribution of carbon atoms in Pt substrate for high quality monolayer graphene synthesis
Li Yinying;Wu Xiaoming;Wu Huaqiang;Qian He;Institute of Microelectronics;Tsinghua University;
Li Yinying;Wu Xiaoming;Wu Huaqiang;Qian He;Institute of Microelectronics;Tsinghua University;
..............page:40-45
Influence of N-type doping on the oxidation rate in n-type 6H-SiC
Guo Hui;Zhao Yaqiu;Zhang Yuming;Ling Xianbao;Microelectronics School;Xidian University;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices;Xidian University;
Guo Hui;Zhao Yaqiu;Zhang Yuming;Ling Xianbao;Microelectronics School;Xidian University;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices;Xidian University;
..............page:46-50
Numerical simulation of the effect of gold doping on the resistance to neutron irradiation of silicon diodes
K.Bekhouche;N.Sengouga;B.K.Jones;Laboratory of Metallic and Semiconducting Materials;Université de Biskra;07000 Biskra;Algeria;Department of Physics;Lancaster University;Lancaster;LA5 9LX;UK;
K.Bekhouche;N.Sengouga;B.K.Jones;Laboratory of Metallic and Semiconducting Materials;Université de Biskra;07000 Biskra;Algeria;Department of Physics;Lancaster University;Lancaster;LA5 9LX;UK;
..............page:51-55
Computer modelling and analysis of the photodegradation effect in a-Si:H p–i–n solar cell
A.F Bouhdjar;L.Ayat;AM.Meftah;N.Sengouga;AF.Meftah;Faculté des Sciences;Laboratoire des Matériaux Semi-conducteurs et Métalliques;Université Mohammed Khider;B.P. 145;Biskra 07000;Algérie;Laboratory of Semiconductor Devices Physics;Physics Department;University of Béchar;P.O. Box 417;Béchar 08000;Algeria;
A.F Bouhdjar;L.Ayat;AM.Meftah;N.Sengouga;AF.Meftah;Faculté des Sciences;Laboratoire des Matériaux Semi-conducteurs et Métalliques;Université Mohammed Khider;B.P. 145;Biskra 07000;Algérie;Laboratory of Semiconductor Devices Physics;Physics Department;University of Béchar;P.O. Box 417;Béchar 08000;Algeria;
..............page:56-63
Performance analysis of InSb based QWFET for ultra high speed applications
T.D.Subash;T.Gnanasekaran;C.Divya;K.N.S.K College of Engineering;Nagercoil-629901;India;Department of IT;RMK College of Engineering and Technology;629401;India;Centre for IT & Eng;Manonmaniam Sundaranar University;627012;India;
T.D.Subash;T.Gnanasekaran;C.Divya;K.N.S.K College of Engineering;Nagercoil-629901;India;Department of IT;RMK College of Engineering and Technology;629401;India;Centre for IT & Eng;Manonmaniam Sundaranar University;627012;India;
..............page:64-67
An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects
M.Hema Lata Rao;N.V.L.Narasimha Murty;School of Electrical Sciences;IIT Bhubaneswar;Bhubaneswar 751013;India;
M.Hema Lata Rao;N.V.L.Narasimha Murty;School of Electrical Sciences;IIT Bhubaneswar;Bhubaneswar 751013;India;
..............page:68-79
Insights into channel potentials and electron quasi-Fermi potentials for DG tunnel FETs
Menka;Anand Bulusu;S.Dasgupta;Department of Electronics and Communication Engineering;Indian Institute of Technology Roorkee;Roorkee;Uttarakhand;India;
Menka;Anand Bulusu;S.Dasgupta;Department of Electronics and Communication Engineering;Indian Institute of Technology Roorkee;Roorkee;Uttarakhand;India;
..............page:80-85
Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation
Li Leilei;Zhou Xinjie;Yu Zongguang;Feng Qing;School of Microelectronics;Xidian University;The 58th Research Institute of China Electronics Technology Group Corporation;
Li Leilei;Zhou Xinjie;Yu Zongguang;Feng Qing;School of Microelectronics;Xidian University;The 58th Research Institute of China Electronics Technology Group Corporation;
..............page:86-89
Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process
Ren Shangqing;Yang Hong;Tang Bo;Xu Hao;Luo Weichun;Tang Zhaoyun;Xu Yefeng;Xu Jing;Wang Dahai;Li Junfeng;Yan Jiang;Zhao Chao;Chen Dapeng;Ye Tianchun;Wang Wenwu;Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
Ren Shangqing;Yang Hong;Tang Bo;Xu Hao;Luo Weichun;Tang Zhaoyun;Xu Yefeng;Xu Jing;Wang Dahai;Li Junfeng;Yan Jiang;Zhao Chao;Chen Dapeng;Ye Tianchun;Wang Wenwu;Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:90-93
GaN HEMT with AlGaN back barrier for high power MMIC switch application
Ren Chunjiang;Shen Hongchang;Li Zhonghui;Chen Tangsheng;Zhang Bin;Gao Tao;National Key Laboratory of Monolithic Integrated Circuits and Modules;Nanjing Electron Devices Institute;
Ren Chunjiang;Shen Hongchang;Li Zhonghui;Chen Tangsheng;Zhang Bin;Gao Tao;National Key Laboratory of Monolithic Integrated Circuits and Modules;Nanjing Electron Devices Institute;
..............page:94-98
An improved trench gate super-junction IGBT with double emitter
Dai Weinan;Zhu Jing;Sun Weifeng;Du Yicheng;Huang Keqin;National ASIC System Engineering Research Center;Southeast University;
Dai Weinan;Zhu Jing;Sun Weifeng;Du Yicheng;Huang Keqin;National ASIC System Engineering Research Center;Southeast University;
..............page:99-104
Performance enhancement of c-CESL-strained 95-nm-gate NMOSFET using trench-based structure
Zhao Di;Luo Qian;Wang Xiangzhan;Yu Qi;Cui Wei;Tan Kaizhou;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Science and Technology on Analog Integrated Circuit Laboratory;
Zhao Di;Luo Qian;Wang Xiangzhan;Yu Qi;Cui Wei;Tan Kaizhou;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Science and Technology on Analog Integrated Circuit Laboratory;
..............page:105-108
Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer
Zhu Zhen;Zhang Xin;Li Peixu;Wang Gang;Xu Xiangang;School of Physics and Engineering;Sun Yat-Sen University;Shandong Huaguang Optoelectronics Co.;Ltd;State Key Laboratory of Crystal Material;Shandong University;
Zhu Zhen;Zhang Xin;Li Peixu;Wang Gang;Xu Xiangang;School of Physics and Engineering;Sun Yat-Sen University;Shandong Huaguang Optoelectronics Co.;Ltd;State Key Laboratory of Crystal Material;Shandong University;
..............page:109-111
A novel lateral cavity surface emitting laser with top sub-wavelength grating
Qi Aiyi;Wang Yufei;Guo Xiaojie;Zheng Wanhua;State key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;Laboratory of Solid-State Optoelectronics Information Technology;Institute of Semiconductors;Chinese Academy of Sciences;
Qi Aiyi;Wang Yufei;Guo Xiaojie;Zheng Wanhua;State key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;Laboratory of Solid-State Optoelectronics Information Technology;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:112-116
All-optical NRZ wavelength conversion using a Sagnac loop with optimized SOA characteristics
Jiang Xiyan;Wang Jin;Gao Chen;Xu Ji;Wan Hongdan;College of Opto-Electronic Engineering;Nanjing University of Posts and Telecommunications;
Jiang Xiyan;Wang Jin;Gao Chen;Xu Ji;Wan Hongdan;College of Opto-Electronic Engineering;Nanjing University of Posts and Telecommunications;
..............page:117-123
A novel SOI pressure sensor for high temperature application
Li Sainan;Liang Ting;Wang Wei;Hong Yingping;Zheng Tingli;Xiong Jijun;Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;Ministry of Education and Science Technology on Electronic Test & Measurement Laboratory. Department of Electronic Science and technology;North University of China;
Li Sainan;Liang Ting;Wang Wei;Hong Yingping;Zheng Tingli;Xiong Jijun;Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;Ministry of Education and Science Technology on Electronic Test & Measurement Laboratory. Department of Electronic Science and technology;North University of China;
..............page:124-128
A 0.8–4.2 GHz monolithic all-digital PLL based frequency synthesizer for wireless communications
Zhao Yuanxin;Gao Yuanpei;Li Wei;Li Ning;Ren Junyan;State Key Laboratory of ASIC & System;Fudan University;
Zhao Yuanxin;Gao Yuanpei;Li Wei;Li Ning;Ren Junyan;State Key Laboratory of ASIC & System;Fudan University;
..............page:129-143
A 9–12 GHz 5-bit active LO phase shifter with a new vector sum method
Chen Changming;Li Wei;Li Ning;Ren Junyan;State Key Laboratory of ASIC & System;Fudan University;
Chen Changming;Li Wei;Li Ning;Ren Junyan;State Key Laboratory of ASIC & System;Fudan University;
..............page:144-153
A 3 Gb/s multichannel transceiver in 65 nm CMOS technology
Zhang Feng;Qiu Yusong;Institute of Microelectronics;Chinese Academy of Sciences;College of Physics and Microelectronics Science;Hunan University;
Zhang Feng;Qiu Yusong;Institute of Microelectronics;Chinese Academy of Sciences;College of Physics and Microelectronics Science;Hunan University;
..............page:154-161
High accuracy digital aging monitor based on PLL-VCO circuit
Zhang Yuejun;Jiang Zhidi;Wang Pengjun;Zhang Xuelong;Institute of Circuits and Systems;Ningbo University;
Zhang Yuejun;Jiang Zhidi;Wang Pengjun;Zhang Xuelong;Institute of Circuits and Systems;Ningbo University;
..............page:162-166
Effect of H2O2 and nonionic surfactant in alkaline copper slurry
Yuan Haobo;Liu Yuling;Jiang Mengting;Chen Guodong;Liu Weijuan;Wang Shengli;Institute of Microelectronics;Hebei University of Technology;
Yuan Haobo;Liu Yuling;Jiang Mengting;Chen Guodong;Liu Weijuan;Wang Shengli;Institute of Microelectronics;Hebei University of Technology;
..............page:167-171
Next generation barrier CMP slurry with novel weakly alkaline chelating agent
Fan Shiyan;Liu Yuling;Sun Ming;Tang Jiying;Yan Chenqi;Li Hailong;Wang Shengli;Institute of Microelectronics;Hebei University of Technology;School of Computer Science and Engineering;Hebei University of Technology;
Fan Shiyan;Liu Yuling;Sun Ming;Tang Jiying;Yan Chenqi;Li Hailong;Wang Shengli;Institute of Microelectronics;Hebei University of Technology;School of Computer Science and Engineering;Hebei University of Technology;
..............page:172-176