1674-4926
2014 Issue 9
The infrared transmission through gold films on ordered two-dimensional non-close-packed colloidal crystals
Ju Jing;Zhou Yuqin;Dong Gangqiang;University of Chinese Academy of Sciences;
Ju Jing;Zhou Yuqin;Dong Gangqiang;University of Chinese Academy of Sciences;
..............page:5-9
Sheet carrier density dependent Rashba spin splitting in the Al0.5Ga0.5N/GaN/Al0.5Ga0.5N quantum well
Cai Ziliang;Li Ming;Fan Libo;College of Electrical and Information Engineering;Xuchang University;
Cai Ziliang;Li Ming;Fan Libo;College of Electrical and Information Engineering;Xuchang University;
..............page:10-14
A susceptor with a ^-shaped slot in a vertical MOCVD reactor by induction heating
Li Zhiming;Li Hailing;Gan Xiaobing;Jiang Haiying;Li Jinping;Fu Xiaoqian;Han Yanbin;Xia Yingjie;Yin Jianqin;Huang Yimei;Hu Shigang;Shandong Provincial Key Laboratory of Network Based Intelligent Computing;School of Information Science and Engineering;University of Jinan;Shandong College of Electronic Technology;College of Management;Shenzhen University;School of Information and Electrical Engineering;Hunan University of Science and Technology;
Li Zhiming;Li Hailing;Gan Xiaobing;Jiang Haiying;Li Jinping;Fu Xiaoqian;Han Yanbin;Xia Yingjie;Yin Jianqin;Huang Yimei;Hu Shigang;Shandong Provincial Key Laboratory of Network Based Intelligent Computing;School of Information Science and Engineering;University of Jinan;Shandong College of Electronic Technology;College of Management;Shenzhen University;School of Information and Electrical Engineering;Hunan University of Science and Technology;
..............page:15-19
Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys
Li Wei;Jin Peng;Wang Weiying;Mao Defeng;Liu Guipeng;Wang Zhanguo;Wang Jiaming;Xu Fujun;Shen Bo;Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory of Artificial Microstructure and Mesoscopic Physics;School of Physics;Peking University;
Li Wei;Jin Peng;Wang Weiying;Mao Defeng;Liu Guipeng;Wang Zhanguo;Wang Jiaming;Xu Fujun;Shen Bo;Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory of Artificial Microstructure and Mesoscopic Physics;School of Physics;Peking University;
..............page:20-24
Growth and properties of GaAs nanowires on fused quartz substrate
Zhao Yufeng;Li Xinhua;Wang Wenbo;Zhou Bukang;Duan Huahua;Shi Tongfei;Zeng Xuesong;Li Ning;Wang Yuqi;Key Laboratory of Material Physics;Institute of Solid State Physics;Chinese Academy of Sciences;
Zhao Yufeng;Li Xinhua;Wang Wenbo;Zhou Bukang;Duan Huahua;Shi Tongfei;Zeng Xuesong;Li Ning;Wang Yuqi;Key Laboratory of Material Physics;Institute of Solid State Physics;Chinese Academy of Sciences;
..............page:25-30
Significant improvement of ZnS film electrical and optical performance by indium incorporation
Chen Jinhuo;Li Wenjian;School of Physics and Information Engineering;Fuzhou University;
Chen Jinhuo;Li Wenjian;School of Physics and Information Engineering;Fuzhou University;
..............page:31-33
Synthesis and luminescence characteristics of ZnO nanotubes
Wang Fuxue;Cai Xiaolong;Yan Dawei;Zhu Zhaomin;Xiao Shaoqing;Gu Xiaofeng;Key Laboratory of Advanced Process Control for Light Industry;Department of Electronic Engineering;Jiangnan University;
Wang Fuxue;Cai Xiaolong;Yan Dawei;Zhu Zhaomin;Xiao Shaoqing;Gu Xiaofeng;Key Laboratory of Advanced Process Control for Light Industry;Department of Electronic Engineering;Jiangnan University;
..............page:34-38
Resistive humidity sensor based on vanadium complex films
Kh.S.Karimov;M.Saleem;M.Mahroof-Tahir;R.Akram;M.T.Saeed Chanee;A.K.Niaz;GIK Institute of Engineering Sciences and Technology;Topi-23640;District Swabi;KPK;Pakistan;Physical Technical Institute of Academy of Sciences;Rudaki Ave.33;Dushanbe;734025;Tajikistan;Government College of Science;Wahdat Road;Lahore-54570;Pakistan;Saint Cloud State University;720 Fourth Avenue South;Saint Cloud;MN 56301-4498;USA;Center of Excellence for Advanced Materials Research;King Abdul Aziz University;Jeddah 21589;P.O.Box 80203;Saudi Arabia;
Kh.S.Karimov;M.Saleem;M.Mahroof-Tahir;R.Akram;M.T.Saeed Chanee;A.K.Niaz;GIK Institute of Engineering Sciences and Technology;Topi-23640;District Swabi;KPK;Pakistan;Physical Technical Institute of Academy of Sciences;Rudaki Ave.33;Dushanbe;734025;Tajikistan;Government College of Science;Wahdat Road;Lahore-54570;Pakistan;Saint Cloud State University;720 Fourth Avenue South;Saint Cloud;MN 56301-4498;USA;Center of Excellence for Advanced Materials Research;King Abdul Aziz University;Jeddah 21589;P.O.Box 80203;Saudi Arabia;
..............page:39-42
Simulation of electrical characteristics and structural optimization for small-scaled dual-gate GeOI MOSFET with high-k gate dielectric
Bai Yurong;Xu Jingping;Liu Lu;Fan Minmin;School of Optical and Electronic Information;Huazhong University of Science & Technology;
Bai Yurong;Xu Jingping;Liu Lu;Fan Minmin;School of Optical and Electronic Information;Huazhong University of Science & Technology;
..............page:43-48
Hysteresis analysis of graphene transistor under repeated test and gate voltage stress
Yang Jie;Jia Kunpeng;Su Yajuan;Chen Yang;Zhao Chao;Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;College of Science;China University of Petroleum;
Yang Jie;Jia Kunpeng;Su Yajuan;Chen Yang;Zhao Chao;Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;College of Science;China University of Petroleum;
..............page:49-53
Fabrication and characterization of the split-drain MAGFET based on the nano-polysilicon thin film transistor
Zhao Xiaofeng;Wen Dianzhong;Lü Meiwei;Guan Hanyu;Liu Gang;Key Laboratory of Electronics Engineering;College of Heilongjiang Province;Heilongjiang University;
Zhao Xiaofeng;Wen Dianzhong;Lü Meiwei;Guan Hanyu;Liu Gang;Key Laboratory of Electronics Engineering;College of Heilongjiang Province;Heilongjiang University;
..............page:54-59
Investigation of the trigger voltage walk-in effect in LDMOS for high-voltage ESD protection
Liang Hailian;Dong Shurong;Gu Xiaofeng;Zhong Lei;Wu Jian;Yu Zongguang;Key Laboratory of Advanced Process Control for Light Industry;Department of Electronic Engineering;Jiangnan University;ESD Laboratory;Department of Information Science and Electronic Engineering;Zhejiang University;China Electronic Technology Group Corporation;No.58 Research Institute;
Liang Hailian;Dong Shurong;Gu Xiaofeng;Zhong Lei;Wu Jian;Yu Zongguang;Key Laboratory of Advanced Process Control for Light Industry;Department of Electronic Engineering;Jiangnan University;ESD Laboratory;Department of Information Science and Electronic Engineering;Zhejiang University;China Electronic Technology Group Corporation;No.58 Research Institute;
..............page:60-63
Evaluation of the drain–source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method
Ma Lin;Feng Shiwei;Zhang Yamin;Deng Bing;Yue Yuan;Institute of Semiconductor Device Reliability Physics;College of Electronic Information & Control Engineering;Beijing University of Technology;
Ma Lin;Feng Shiwei;Zhang Yamin;Deng Bing;Yue Yuan;Institute of Semiconductor Device Reliability Physics;College of Electronic Information & Control Engineering;Beijing University of Technology;
..............page:64-68
Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors
Luan Chongbiao;Lin Zhaojun;Lü Yuanjie;Feng Zhihong;Zhao Jingtao;Zhou Yang;Yang Ming;School of Physics;Shandong University;National Key Laboratory of Application Specific Integrated Circuit;Hebei Semiconductor Research Institute;
Luan Chongbiao;Lin Zhaojun;Lü Yuanjie;Feng Zhihong;Zhao Jingtao;Zhou Yang;Yang Ming;School of Physics;Shandong University;National Key Laboratory of Application Specific Integrated Circuit;Hebei Semiconductor Research Institute;
..............page:69-74
The expression correction of transistor current gain and its application in reliability assessment
Qi Haochun;Zhang Xiaoling;Xie Xuesong;Zhao Li;Chen Chengju;Lü Changzhi;Department of Electronic Information and Control Engineering;Beijing University of Technology;The Chinese People’s Liberation Army 68129 Troops;
Qi Haochun;Zhang Xiaoling;Xie Xuesong;Zhao Li;Chen Chengju;Lü Changzhi;Department of Electronic Information and Control Engineering;Beijing University of Technology;The Chinese People’s Liberation Army 68129 Troops;
..............page:75-79
Improved two-dimensional responsivity physical model of a CMOS UV and blue-extended photodiode
Chen Changping;Tian Manfang;Jiang Zhenyu;Jin Xiangliang;Luo Jun;Faculty of Materials;Optoelectronics and Physics;Xiangtan University;Hunan Engineering Laboratory for Microelectronics;Optoelectronics and System on a Chip;Department of Precision Mechanical Engineering;Shanghai University;
Chen Changping;Tian Manfang;Jiang Zhenyu;Jin Xiangliang;Luo Jun;Faculty of Materials;Optoelectronics and Physics;Xiangtan University;Hunan Engineering Laboratory for Microelectronics;Optoelectronics and System on a Chip;Department of Precision Mechanical Engineering;Shanghai University;
..............page:80-86
A 2.05 eV AlGaInP sub-cell used in next generation solar cells
Lu Hongbo;Li Xinyi;Zhang Wei;Zhou Dayong;Shi Mengqi;Sun Lijie;Chen Kaijian;Research Center for Photovoltaics;Shanghai Institute of Space Power-Source;
Lu Hongbo;Li Xinyi;Zhang Wei;Zhou Dayong;Shi Mengqi;Sun Lijie;Chen Kaijian;Research Center for Photovoltaics;Shanghai Institute of Space Power-Source;
..............page:87-90
Finite element analysis on factors influencing the clamping force in an electrostatic chuck
WangXingkuo;ChengJia;WangKesheng;YangYiyong;Sun Yuchun;Cao Minglu;Ji Linhong;School of Engineering and Technology;China University of Geosciences;Department of Mechanical Engineering;Tsinghua University;Department of Mechanical Engineering;Academy of Armored Force Engineering of PLA;
WangXingkuo;ChengJia;WangKesheng;YangYiyong;Sun Yuchun;Cao Minglu;Ji Linhong;School of Engineering and Technology;China University of Geosciences;Department of Mechanical Engineering;Tsinghua University;Department of Mechanical Engineering;Academy of Armored Force Engineering of PLA;
..............page:91-95
Selected area growth integrated wavelength converter based on PD-EAM optical logic gate
Niu Bin;Qiu Jifang;Zhou Daibing;Zhang Can;Liang Song;Lu Dan;Zhao Lingjuan;Wu Jian;Wang Wei;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory of Information Photonics and Optical Communications;Beijing University of Posts and Telecommunications;
Niu Bin;Qiu Jifang;Zhou Daibing;Zhang Can;Liang Song;Lu Dan;Zhao Lingjuan;Wu Jian;Wang Wei;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory of Information Photonics and Optical Communications;Beijing University of Posts and Telecommunications;
..............page:96-100
Performance analysis of a complete adiabatic logic system driven by the proposed power clock generator
Jitendra Kanungo;S.Dasgupta;Department of Electronics & Communication Engineering;Jaypee University of Engineering & Technology;Microelectronics & VLSI Group;Department of Electronics & Communication Engineering Indian Institute of Technology;
Jitendra Kanungo;S.Dasgupta;Department of Electronics & Communication Engineering;Jaypee University of Engineering & Technology;Microelectronics & VLSI Group;Department of Electronics & Communication Engineering Indian Institute of Technology;
..............page:101-107
A compact PE memory for vision chips
Shi Cong;Chen Zhe;Yang Jie;Wu Nanjian;Wang Zhihua;State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Department of Electronic Engineering;Tsinghua University;Institute of Microelectronics;Tsinghua University;
Shi Cong;Chen Zhe;Yang Jie;Wu Nanjian;Wang Zhihua;State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Department of Electronic Engineering;Tsinghua University;Institute of Microelectronics;Tsinghua University;
..............page:108-114
A reconfigurable CBP/LP active RC filter with noise-shaping technique for wireless receivers
Liu Qiongbing;Yu Xiaobao;Zhang Junfeng;Xu Yang;Chi Baoyong;Institute of Microelectronics;Tsinghua University;
Liu Qiongbing;Yu Xiaobao;Zhang Junfeng;Xu Yang;Chi Baoyong;Institute of Microelectronics;Tsinghua University;
..............page:115-120
116 dB dynamic range CMOS readout circuit for MEMS capacitive accelerometer
Long Shanli;Liu Yan;He Kejun;Tang Xinggang;Chen Qian;Huadong Photoelectric Integrated Device Research Institute;Nanjing University of Science & Technology;
Long Shanli;Liu Yan;He Kejun;Tang Xinggang;Chen Qian;Huadong Photoelectric Integrated Device Research Institute;Nanjing University of Science & Technology;
..............page:121-125
A CMOS fifth-derivative Gaussian pulse generator for UWB applications
He Jin;Luo Jiang;Wang Hao;Chang Sheng;Huang Qijun;Zhang Yueping;School of Physics and Technology;Wuhan University;School of Electrical and Electronic Engineering;Nanyang Technological University;
He Jin;Luo Jiang;Wang Hao;Chang Sheng;Huang Qijun;Zhang Yueping;School of Physics and Technology;Wuhan University;School of Electrical and Electronic Engineering;Nanyang Technological University;
..............page:126-129
A low-power current self-adjusted VCO using a bottom PMOS current source
Sheng Zhixiong;Yu Fengqi;Department of Integrated Electronics;Shenzhen Institutes of Advanced Technology;Chinese Academy of Sciences;Institute of Microelectronics;Chinese Academy of Sciences;The Chinese University of Hong Kong;University of Chinese Academy of Sciences;
Sheng Zhixiong;Yu Fengqi;Department of Integrated Electronics;Shenzhen Institutes of Advanced Technology;Chinese Academy of Sciences;Institute of Microelectronics;Chinese Academy of Sciences;The Chinese University of Hong Kong;University of Chinese Academy of Sciences;
..............page:130-134
Low noise frequency synthesizer with self-calibrated voltage controlled oscillator and accurate AFC algorithm
Qin Peng;Li Jinbo;Kang Jian;Li Xiaoyong;Zhou Jianjun;Centre for Analog/Radio Frequency Integrated Circuits;Shanghai Jiao Tong University;
Qin Peng;Li Jinbo;Kang Jian;Li Xiaoyong;Zhou Jianjun;Centre for Analog/Radio Frequency Integrated Circuits;Shanghai Jiao Tong University;
..............page:135-139
An accurate RLGC circuit model for dual tapered TSV structure
Wei Zhen;Li Xiaochun;Mao Junfa;Key Laboratory of Ministry of Education of Design and Electromagnetic Compatibility of High-Speed Electronic Systems;Shanghai Jiao Tong University;
Wei Zhen;Li Xiaochun;Mao Junfa;Key Laboratory of Ministry of Education of Design and Electromagnetic Compatibility of High-Speed Electronic Systems;Shanghai Jiao Tong University;
..............page:140-146
A 14-bit 100-MS/s CMOS pipelined ADC featuring 83.5-dB SFDR
Zhao Nan;Wei Qi;Yang Huazhong;Wang Hui;Division of Circuits and Systems;Department of Electronic Engineering;Tsinghua University;
Zhao Nan;Wei Qi;Yang Huazhong;Wang Hui;Division of Circuits and Systems;Department of Electronic Engineering;Tsinghua University;
..............page:147-154
A novel trajectory prediction control for proximate time-optimal digital control DC–DC converters
Wang Qing;Chen Ning;Xu Shen;Sun Weifeng;Shi Longxing;National ASIC System Engineering Research Center;Southeast University;
Wang Qing;Chen Ning;Xu Shen;Sun Weifeng;Shi Longxing;National ASIC System Engineering Research Center;Southeast University;
..............page:155-161
Fully integrated circuit chip of microelectronic neural bridge
Shen Xiaoyan;Wang Zhigong;School of Electronics and Information;Nantong University;Institute of RF- & OE-ICs;Southeast University;
Shen Xiaoyan;Wang Zhigong;School of Electronics and Information;Nantong University;Institute of RF- & OE-ICs;Southeast University;
..............page:162-165
An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness
Ma Xueli;Yang Hong;Wang Wenwu;Yin Huaxiang;Zhu Huilong;Zhao Chao;Chen Dapeng;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;
Ma Xueli;Yang Hong;Wang Wenwu;Yin Huaxiang;Zhu Huilong;Zhao Chao;Chen Dapeng;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:166-169
Research on a processing model of CMP 6H-SiC(0001) single crystal wafer
Zhang Peng;Feng Xianying;Yang Jingfang;Key Laboratory of High Efficiency and Clean Mechanical Manufacture;Ministry of Education;Shandong University;
Zhang Peng;Feng Xianying;Yang Jingfang;Key Laboratory of High Efficiency and Clean Mechanical Manufacture;Ministry of Education;Shandong University;
..............page:170-174
Effect of novel alkaline copper slurry on 300 mm copper global planarization
Liu Weijuan;Liu Yuling;Wang Chenwei;Chen Guodong;Jiang Mengting;Yuan Haobo;Cheng Pengfei;Institute of Microelectronics;Hebei University of Technology;
Liu Weijuan;Liu Yuling;Wang Chenwei;Chen Guodong;Jiang Mengting;Yuan Haobo;Cheng Pengfei;Institute of Microelectronics;Hebei University of Technology;
..............page:175-178