First principle studies of structural, elastic, electronic and optical properties of Zn-chalcogenides under pressure
Muhammad Bilal;M.Shafiq;Iftikhar Ahmad;Imad Khan;Department of Physics;University of Malakand;Chakdara;Pakistan;

..............page:5-13

Optical transmission in thin films of vanadium compounds
Kh.S.Karimov;M.Mahroof-Tahir;M.Saleem;N.Ahmad;A.Rashid;GIK Institute of Engineering Sciences and Technology;Topi;District Swabi;KPK 23640;Pakistan;Physical Technical Institute of Academy of Sciences;Rudaki Ave;33;Dushanbe 734025;Tajikistan;Saint Cloud State University;720 Fourth Avenue South;Saint Cloud;MN 56301-4498;USA;Government College of Science;Wahdat Road;Lahore 54570;Pakistan;

..............page:14-18

Improved adhesion and interface ohmic contact on n-type 4H-SiC substrate by using Ni/Ti/Ni
Han Linchao;Shen Huajun;Liu Kean;Wang Yiyu;Tang Yidan;Bai Yun;Xu Hengyu;Wu Yudong;Liu Xinyu;Microwave Device and IC Department;Institute of Microelectronics;Chinese Academy of Sciences;Zhuzhou CSR Times Electric Co.;Ltd;

..............page:19-22

Effect of band gap energy on the electrical conductivity in doped ZnO thin film
Said Benramache;Okba Belahssen;Hachemi Ben Temam;Physic Laboratory of Thin Films and Applications LPCMA;University of Biskra;Biskra 07000;Algeria;

..............page:23-26

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate
Zhou Xuliang;Pan Jiaoqing;Liang Renrong;Wang Jing;Wang Wei;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;Tsinghua National Laboratory for Information Science and Technology;Institute of Microelectronics;Tsinghua University;

..............page:27-31

Field electron emission from structure-controlled one-dimensional CuO arrays synthesized by wet chemical process
Hu Liqin;Zhang Dian;Hu Hailong;Guo Tailiang;College of Physics and Information Engineering;Fuzhou University;

..............page:32-35

Strain effects on band structure of wurtzite ZnO: a GGA+U study
Qiao Liping;Chai Changchun;Yang Yintang;Yu Xinhai;Shi Chunlei;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;School of Information Engineering;Tibet University for Nationalities;

..............page:36-40

Analog performance of double gate junctionless tunnel field effect transistor
M.W.Akram;Bahniman Ghosh;Department of Electrical Engineering;Indian Institute of Technology Kanpur;Kanpur;Uttar Pradesh;208016;India;Microelectronics Research Center;10100 Burnet Road;Bldg.160;University of Texas at Austin;Austin;TX;78758;USA;

..............page:41-45

An optimized junctionless GAA MOSFET design based on multi-objective computation for high-performance ultra-low power devices
T.Bendib;F.Djeffal;M.Meguellati;LEA;Department of Electronics;University of Batna;Batna 05000;Algeria;

..............page:46-51

Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor
Zhu Liheng;Chen Xingbi;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;

..............page:52-55

Hot-carrier effects on irradiated deep submicron NMOSFET
Cui Jiangwei;Zheng Qiwen;Yu Xuefeng;Cong Zhongchao;Zhou Hang;Guo Qi;Wen Lin;Wei Ying;Ren Diyuan;Key Laboratory of Functional Materials and Devices Under Special Environments;Chinese Academy of Sciences;Xinjiang Key Laboratory of Electric Information Materials and Devices;Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;University of Chinese Academy of Sciences;

..............page:56-59

Development of 10 kV 4H-SiC JBS diode with FGR termination
Huang Runhua;Tao Yonghong;Cao Pengfei;Wang Ling;Chen Gang;Bai Song;Li Rui;Li Yun;Zhao Zhifei;Nanjing Electronic Devices Institute;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;

..............page:60-63

Self-aligned graphene field-effect transistors on SiC(0001) substrates with self-oxidized gate dielectric
Li Jia;Yu Cui;Wang Li;Liu Qingbin;He Zezhao;Cai Shujun;Feng Zhihong;National Key Laboratory of ASIC;Hebei Semiconductor Research Institute;Information Center of Science and Technology;

..............page:64-68

Electric field optimized LDMOST using multiple decrescent and reverse charge regions
Cheng Jianbing;Xia Xiaojuan;Jian Tong;Guo Yufeng;Yu Shujuan;Yang Hao;School of Electronic Science & Engineering;RF Integration and Micro Assembly Engineering Laboratory;Nanjing University of Posts and Telecommunications;National Application-Specific Integrated Circuit System Engineering Research Center;Southeast University;

..............page:69-72

A novel symmetrical split-gate structure for 2-bit per cell flash memory
Fang Liang;Kong Weiran;Gu Jing;Zhang Bo;Zou Shichang;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Huahong Grace Semiconductor Manufacturing Corporation;University of Chinese Academy of Sciences;

..............page:73-76

A high-speed avalanche photodiode
Li Bin;Yang Xiaohong;Yin Weihong;Lü Qianqian;Cui Rong;Han Qin;State Key Laboratory of Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;

..............page:77-81

Analysis of coupling between nanotaper SiGe-SOI waveguide and fiber
Feng Song;Gao Yong;Department of Electronic Engineering;Xi’an University of Technology;School of Science;Xi’an Polytechnic University;

..............page:82-87

Double junction photodiode for X-ray CMOS sensor IC
Xu Chaoqun;Sun Ying;Han Yan;Zhu Dazhong;Department of Information Science and Electronic Engineering;Institute of Microelectronics and Optoelectronics;Zhejiang University;

..............page:88-93

Pinch-off voltage modeling for CMOS image pixels with a pinned photodiode structure
Cao Chen;Zhang Bing;Wu Longsheng;Li Xin;Wang Junfeng;Xi’an Microelectronics Technology Institute;

..............page:94-100

GaN-based high-voltage light-emitting diodes with backside reflector
Huang Huamao;Wang Hong;Huang Xiaosheng;Hu Jinyong;Engineering Research Center for Optoelectronics of Guangdong Province;Department of Physics;School of Science;South China University of Technology;

..............page:101-105

Analysis of reliability factors of MEMS disk resonator under the strong inertial impact
Dong Linxi;Yu Quan;Bao Jinyan;Tao Jiaping;Key Laboratory of RF Circuits and System of Ministry of Education;Hangzhou Dianzi University;State Key Laboratory of Transducer Technology;Chinese Academy of Sciences;

..............page:106-110

Ceramic thermal wind sensor based on advanced direct chip attaching package
Zhou Lin;Qin Ming;Chen Shengqi;Chen Bei;Key Laboratory of MEMS of Ministry of Education;Southeast University;

..............page:111-115

MOSFET-like CNFET based logic gate library for low-power application:a comparative study
P.A.Gowri Sankar;K.Udhayakumar;Department of Electrical Engineering;Anna University;

..............page:116-128

A 3.01–3.82 GHz CMOS LC voltage-controlled oscillator with 6.29% VCO-gain variation for WLAN applications
Liu Xiaolong;Zhang Lei;Zhang Li;Wang Yan;Yu Zhiping;Institute of Microelectronics;Tsinghua University;

..............page:129-135

A Δ ∑ fractional-N frequency synthesizer for FM tuner using low noise filter and quantization noise suppression technique
Chen Mingyi;Chu Xiaoji;Yu Peng;Yan Jun;Shi Yin;Institute of Semiconductors;Chinese Academy of Sciences;

..............page:136-142

A broadband regenerative frequency divider in InGaP/GaAs HBT technology
Zhang Jincan;Zhang Yuming;Lü Hongliang;Zhang Yimen;Liu Min;Zhong Yinghui;Shi Zheng;School of Microelectronics;Xidian University;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;

..............page:143-146

A single channel, 6-bit 230-MS/s asynchronous SAR ADC based on 2 bits/stage
Han Xue;Wei Qi;Yang Huazhong;Wang Hui;Division of Circuits and Systems;Department of Electronic Engineering;Tsinghua University;

..............page:147-152

A 14-bit 100-MS/s 85.2-dB SFDR pipelined ADC without calibration
Zhao Nan;Luo Hua;Wei Qi;Yang Huazhong;Division of Circuits and Systems;Department of Electronic Engineering;Tsinghua University;

..............page:153-158

A novel sourceline voltage compensation circuit for embedded NOR flash memory
Zhang Shengbo;Yang Guangjun;Hu Jian;Xiao Jun;State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Micro-System and Information Technology;Chinese Academy of Sciences;University of Chinese Academy of Sciences;Shanghai Huahong Grace Semiconductor Manufacturing Corporation;

..............page:159-163

A sub-milliwatt audio-processing platform for digital hearing aids
Yuan Jia;Chen Liming;Yu Zenghui;Hei Yong;Institute of Microelectronics;Chinese Academy of Sciences;

..............page:164-168