1674-4926
2014 Issue 6
Optical properties of electrochemically synthesized polypyrrole thin films:the electrolyte effect
J.V.Thombare;S.K.Shinde;G.M.Lohar;U.M.Chougale;S.S.Dhasade;H.D.Dhaygude;B.P.Relekar;V.J.Fulari;Holography and Materials Research Laboratory;Department of Physics;Shivaji University;Department of Physics;Vidnyan Mahavidyalya;Sangola;
J.V.Thombare;S.K.Shinde;G.M.Lohar;U.M.Chougale;S.S.Dhasade;H.D.Dhaygude;B.P.Relekar;V.J.Fulari;Holography and Materials Research Laboratory;Department of Physics;Shivaji University;Department of Physics;Vidnyan Mahavidyalya;Sangola;
..............page:5-8
Synthesis of In2S3 thin films by spray pyrolysis from precursors with different[S]/[In] ratios
Thierno Sall;A.Nafidi;Bernabé Marí Soucase;Miguel Mollar;Bouchaib Hartitti;Mounir Fahoume;L.P.M.C;Faculté des Sciences;Université Ibn Tofai;BP.133-14000 Kenitra;Morocco;Departamento de Fisica Aplicada-IDF;Universitat Politècnica;Camí de Vera s/n 46022 València;Spain;Laboratory of Condensed Matter Physics and Nanomaterials for Renewable Energy;University Ibn Zohr;Agadir;Morocco;LPMAER;Départment de Physique;Université Hassan II FSTM Mohammedia;Morocco;
Thierno Sall;A.Nafidi;Bernabé Marí Soucase;Miguel Mollar;Bouchaib Hartitti;Mounir Fahoume;L.P.M.C;Faculté des Sciences;Université Ibn Tofai;BP.133-14000 Kenitra;Morocco;Departamento de Fisica Aplicada-IDF;Universitat Politècnica;Camí de Vera s/n 46022 València;Spain;Laboratory of Condensed Matter Physics and Nanomaterials for Renewable Energy;University Ibn Zohr;Agadir;Morocco;LPMAER;Départment de Physique;Université Hassan II FSTM Mohammedia;Morocco;
..............page:9-13
Investigation on surface roughness in chemical mechanical polishing of TiO2 thin film
Duan Bo;Zhou Jianwei;Liu Yuling;Wang Chenwei;Zhang Yufeng;Institute of Microelectronics;Hebei University of Technology;
Duan Bo;Zhou Jianwei;Liu Yuling;Wang Chenwei;Zhang Yufeng;Institute of Microelectronics;Hebei University of Technology;
..............page:14-17
Luminescence properties of tetrapod ZnO nanostructures
Wang Fuxue;Cai Xiaolong;Yan Dawei;Zhu Zhaomin;Gu Xiaofeng;Key Laboratory of Advanced Process Control for Light Industry;Department of Electronic Engineering;Jiangnan University;
Wang Fuxue;Cai Xiaolong;Yan Dawei;Zhu Zhaomin;Gu Xiaofeng;Key Laboratory of Advanced Process Control for Light Industry;Department of Electronic Engineering;Jiangnan University;
..............page:18-22
Hetero-gate-dielectric double gate junctionless transistor(HGJLT)with reduced band-to-band tunnelling effects in subthreshold regime
Bahniman Ghosh;Partha Mondal;M.W.Akram;Punyasloka Bal;Akshay Kumar Salimath;Microelectronics Research Center;10100 Burnet Road;University of Texas at Austin;Department of Electrical Engineering;Indian Institute of Technology Kanpur;
Bahniman Ghosh;Partha Mondal;M.W.Akram;Punyasloka Bal;Akshay Kumar Salimath;Microelectronics Research Center;10100 Burnet Road;University of Texas at Austin;Department of Electrical Engineering;Indian Institute of Technology Kanpur;
..............page:23-29
Performance analysis of 20 nm gate-length In0:2Al0:8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFFratio
A.Bhattacharjee;T.R.Lenka;Department of Electronics and Communication Engineering;National Institute of Technology Silchar;
A.Bhattacharjee;T.R.Lenka;Department of Electronics and Communication Engineering;National Institute of Technology Silchar;
..............page:30-35
TDDB characteristic and breakdown mechanism of ultra-thin SiO2/HfO2 bilayer gate dielectrics
Tao Fenfen;Yang Hong;Tang Bo;Tang Zhaoyun;Xu Yefeng;Xu Jing;Wang Qingpu;Yan Jiang;School of Physics;Shandong University;Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
Tao Fenfen;Yang Hong;Tang Bo;Tang Zhaoyun;Xu Yefeng;Xu Jing;Wang Qingpu;Yan Jiang;School of Physics;Shandong University;Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:36-41
Performance enhancement of pentacene-based organic field-effect transistor by inserting a WO3 buffer layer
Fan Jianfeng;Cheng Xiaoman;Bai Xiao;Zheng Lingcheng;Jiang Jing;Wu Feng;School of Science;Tianjin University of Technology;Institute of Material Physics;Tianjin University of Technology;Key Laboratory of Display Material and Photoelectric Devices;Ministry of Education;Tianjin key Laboratory of Photoelectric Materials and Device;
Fan Jianfeng;Cheng Xiaoman;Bai Xiao;Zheng Lingcheng;Jiang Jing;Wu Feng;School of Science;Tianjin University of Technology;Institute of Material Physics;Tianjin University of Technology;Key Laboratory of Display Material and Photoelectric Devices;Ministry of Education;Tianjin key Laboratory of Photoelectric Materials and Device;
..............page:42-45
Toluene-sensing properties of In2O3 nanotubes synthesized by electrospinning
Chi Xiao;Liu Changbai;Zhang Jinbao;Liu Li;Li Haiying;He Yue;Bo Xiaoqing;Liu Lili;State Key Laboratory of Superhard Materials;College of Physics;Jilin University;College of Electronic Science & Engineering;Jilin University;
Chi Xiao;Liu Changbai;Zhang Jinbao;Liu Li;Li Haiying;He Yue;Bo Xiaoqing;Liu Lili;State Key Laboratory of Superhard Materials;College of Physics;Jilin University;College of Electronic Science & Engineering;Jilin University;
..............page:46-50
Quantum simulation study of double gate hetero gate dielectric and LDD doping graphene nanoribbon p–i–n tunneling FETs
Wang Wei;Yue Gongshu;Yang Xiao;Zhang Lu;Zhang Ting;College of Electronic Science and Engineering;Nanjing University of Posts and Telecommunications;
Wang Wei;Yue Gongshu;Yang Xiao;Zhang Lu;Zhang Ting;College of Electronic Science and Engineering;Nanjing University of Posts and Telecommunications;
..............page:51-56
Total dose effects on the matching properties of deep submicron MOS transistors
Wang Yuxin;Hu Rongbin;Li Ruzhang;Chen Guangbing;Fu Dongbing;Lu Wu;Science and Technology on Analog Integrated Circuit Laboratory;No.24 Research Institute;China Electronics Technology Group Corporation;Xinjiang Technical Institute of Physics and Chemistry;Chinese Academy of Sciences;
Wang Yuxin;Hu Rongbin;Li Ruzhang;Chen Guangbing;Fu Dongbing;Lu Wu;Science and Technology on Analog Integrated Circuit Laboratory;No.24 Research Institute;China Electronics Technology Group Corporation;Xinjiang Technical Institute of Physics and Chemistry;Chinese Academy of Sciences;
..............page:57-61
Back-illuminated AlxGa1-xN-based dual-band solar-blind ultraviolet photodetectors
Yang Min;Chong Ming;Zhao Degang;Wang Xiaoyong;Su Yanmei;Sun Jie;Sun Xiuyan;Nano-Photonics Laboratory;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;
Yang Min;Chong Ming;Zhao Degang;Wang Xiaoyong;Su Yanmei;Sun Jie;Sun Xiuyan;Nano-Photonics Laboratory;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:62-65
Theoretical calculation of the p-emitter length for snapback-free reverse-conducting IGBT
Zhu Liheng;Chen Xingbi;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
Zhu Liheng;Chen Xingbi;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:66-70
A novel DTSCR with a variation lateral base doping structure to improve turn-on speed for ESD protection
Liu Jizhi;Liu Zhiwei;Jia Ze;Liou Juin.J;State Key Laboratory of Electronic Thin Films and Integrate Devices;University of Electronic Science and Technology of China;School of Electrical Engineering and Computer Science;University of Central Florida;
Liu Jizhi;Liu Zhiwei;Jia Ze;Liou Juin.J;State Key Laboratory of Electronic Thin Films and Integrate Devices;University of Electronic Science and Technology of China;School of Electrical Engineering and Computer Science;University of Central Florida;
..............page:71-79
Laser SEU sensitivity mapping of deep submicron CMOS SRAM
Yu Yongtao;Feng Guoqiang;Chen Rui;Han Jianwei;Center for Space Science and Applied Research;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
Yu Yongtao;Feng Guoqiang;Chen Rui;Han Jianwei;Center for Space Science and Applied Research;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
..............page:80-83
The dual cycle bridge detection of piezoresistive triaxial accelerometer based on MEMS technology
Zhang Juanting;He Changde;Zhang Hui;Li Yuping;Zhang Yongping;Du Chunhui;Zhang Wendong;Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;North University of China;Key Laboratory of Science and Technology on Electronic Test & Measurement;North University of China;
Zhang Juanting;He Changde;Zhang Hui;Li Yuping;Zhang Yongping;Du Chunhui;Zhang Wendong;Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;North University of China;Key Laboratory of Science and Technology on Electronic Test & Measurement;North University of China;
..............page:84-93
A 2.4 GHz ultra-low power low-IF receiver and MUX-based transmitter for WPAN applications
Chen Jingjing;Liu Weiyang;Liu Xiaodong;Zhang Zhao;Liu Liyuan;Wang Haiyong;Wu Nanjian;State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;
Chen Jingjing;Liu Weiyang;Liu Xiaodong;Zhang Zhao;Liu Liyuan;Wang Haiyong;Wu Nanjian;State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:94-99
A 0.06 mm~2 1.0 V 2.5 mW 10 bit 250 MS/s current-steering D/A converter in 65 nm GP CMOS process
Guo Yawei;Li Li;Ou Peng;Hui Zhida;Cheng Xu;Zeng Xiaoyang;State Key Laboratory of;ASIC and System;Fudan University;
Guo Yawei;Li Li;Ou Peng;Hui Zhida;Cheng Xu;Zeng Xiaoyang;State Key Laboratory of;ASIC and System;Fudan University;
..............page:100-105
A carrier leakage calibration and compensation technique for wideband wireless transceiver
Zhou Liguo;Peng Jin;Yuan Fang;Fang Zhi;Yan Jun;Shi Yin;Institute of Semiconductors;Chinese Academy of Sciences;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;
Zhou Liguo;Peng Jin;Yuan Fang;Fang Zhi;Yan Jun;Shi Yin;Institute of Semiconductors;Chinese Academy of Sciences;Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;
..............page:106-112
A capacitor-free high PSR CMOS low dropout voltage regulator
Li Zhichao;Liu Yuntao;Kuang Zhangqu;Chen Jie;Institute of Microelectronics;Chinese Academy of Sciences;Superpix Micro Technology Co.Ltd;
Li Zhichao;Liu Yuntao;Kuang Zhangqu;Chen Jie;Institute of Microelectronics;Chinese Academy of Sciences;Superpix Micro Technology Co.Ltd;
..............page:113-117
A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications
Cui Jie;Chen Lei;Zhao Peng;Niu Xu;Liu Yi;Micro-nano Device Research Center;Shanghai Advanced Research Institute;Chinese Academy of Sciences;Graduate University of the Chinese Academy of Sciences;Shanghai Raiser Electronics;
Cui Jie;Chen Lei;Zhao Peng;Niu Xu;Liu Yi;Micro-nano Device Research Center;Shanghai Advanced Research Institute;Chinese Academy of Sciences;Graduate University of the Chinese Academy of Sciences;Shanghai Raiser Electronics;
..............page:118-122
Performance comparison of radiation-hardened layout techniques
Lü Lingjuan;Liu Ruping;Lin Min;Sang Zehua;Zou Shichang;Yang Genqing;The State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
Lü Lingjuan;Liu Ruping;Lin Min;Sang Zehua;Zou Shichang;Yang Genqing;The State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
..............page:123-126
A 6-bit 4 GS/s pseudo-thermometer segmented CMOS DAC
Song Yijun;Li Wenyuan;Institute of RF-& OE-ICs;Southeast University;
Song Yijun;Li Wenyuan;Institute of RF-& OE-ICs;Southeast University;
..............page:127-131
Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics
Yan Hongli;Jia Renxu;Tang Xiaoyan;Song Qingwen;Zhang Yuming;School of Microelectronics;Xidian University;
Yan Hongli;Jia Renxu;Tang Xiaoyan;Song Qingwen;Zhang Yuming;School of Microelectronics;Xidian University;
..............page:132-135
The application of Cu/SiO2 catalytic system in chemical mechanical planarization based on the stability of SiO2 sol
Li Yan;Liu Yuling;Wang Aochen;Yang Zhixin;Sun Mingbin;Cheng Chuan;Zhang Yufeng;Zhang Nannan;Institute of Microelectronic Technique and Materials;Hebei University of Technology;
Li Yan;Liu Yuling;Wang Aochen;Yang Zhixin;Sun Mingbin;Cheng Chuan;Zhang Yufeng;Zhang Nannan;Institute of Microelectronic Technique and Materials;Hebei University of Technology;
..............page:136-142