A novel terminal structure for total dose irradiation hardened of a P-VDMOS
Tang Zhaohuan;Liu Rongkan;Tan Kaizhou;Luo Jun;Hu Gangyi;Li Ruzhang;Ren Huaping;Wang Bin;Science and Technology on Analog Integrated Circuit Laboratory;Sichuan Institute of Solid-State Circuits;China Electronics Technology Group Corp;Quality and Safety Detecting Centre of Chongqing Special Equipment;
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A novel algorithmic method for piezoresistance calculation
Hong Yingping;Liang Ting;Ge Binger;Wang Wei;Zheng Tingli;Li Sainan;Xiong Jijun;Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;Ministry of Education and Science Technology on Electronic Test & Measurement Laboratory;Department of ElectronicScience and technology;North University of China;
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A comparative study of Ge/Au/Ni/Au-based ohmic contact on graphene
Min Wenchao;Sun Hao;Zhang Qilian;Chen Zhiying;Zhang Yanhui;Yu Guanghui;Sun Xiaowei;Key Laboratory of Terahertz Solid-State Technology;Shanghai Institute of Microsystem and Information Technology;University of Chinese Academy of Sciences;State Key Laboratory of Functional Materials for Informatics;
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