1674-4926
2014 Issue 4
Solid State Physics View of Liquid State Chemistry Ⅲ. Electrical Conductance of Pure and Impure Water
Jie Binbin;Sah Chihtang;Department of Physics;Xiamen University;Chinese Academy of Sciences;
Jie Binbin;Sah Chihtang;Department of Physics;Xiamen University;Chinese Academy of Sciences;
..............page:5-24
Correlation between crystallite size–optical gap energy and precursor molarities of ZnO thin films
S. Benramache;O. Belahssen;A. Guettaf;A. Arif;Material Sciences Laboratory;Faculty of Science;University of Biskra;Physic Laboratory of Thin Films and Applications LPCMA;University of Biskra;Mechanics Department;Faculty of Technology;University of Tébessa;Electrical Engineering Department;Faculty of Technology;University of Biskra;
S. Benramache;O. Belahssen;A. Guettaf;A. Arif;Material Sciences Laboratory;Faculty of Science;University of Biskra;Physic Laboratory of Thin Films and Applications LPCMA;University of Biskra;Mechanics Department;Faculty of Technology;University of Tébessa;Electrical Engineering Department;Faculty of Technology;University of Biskra;
..............page:25-28
Metal dopants in HfO2-based RRAM: first principle study
Zhao Yuanyang;Wang Jiayu;Xu Jianbin;Yang Fei;Liu Qi;Dai Yuehua;Institute of Electronic and Information Project;Anhui University;Laboratory of Nano-Fabrication and Novel Device Integrated Technology;Institute of Microelectronics;Chinese Academyof Sciences;
Zhao Yuanyang;Wang Jiayu;Xu Jianbin;Yang Fei;Liu Qi;Dai Yuehua;Institute of Electronic and Information Project;Anhui University;Laboratory of Nano-Fabrication and Novel Device Integrated Technology;Institute of Microelectronics;Chinese Academyof Sciences;
..............page:29-35
Fabrication and electrical properties of p-CuAlO2/（n-, p-）Si heterojunctions
Wu Suzhen;Deng Zanhong;Dong Weiwei;Shao Jingzhen;Fang Xiaodong;Anhui Provincial Key Laboratory of Photonic Devices and Materials;Anhui Institute of Optics and Fine Mechanics;Chinese Academy of Sciences;Key Laboratory of Novel Thin Film Solar Cells;Chinese Academy of Sciences;
Wu Suzhen;Deng Zanhong;Dong Weiwei;Shao Jingzhen;Fang Xiaodong;Anhui Provincial Key Laboratory of Photonic Devices and Materials;Anhui Institute of Optics and Fine Mechanics;Chinese Academy of Sciences;Key Laboratory of Novel Thin Film Solar Cells;Chinese Academy of Sciences;
..............page:36-40
Modified textured surface MOCVD-ZnO:B transparent conductive layers for thinfilm solar cells
Chen Xinliang;Yan Congbo;Geng Xinhua;Zhang Dekun;Wei Changchun;Zhao Ying;Zhang Xiaodan;Institute of Photo-Electronic Thin Film Devices and Technology;Nankai University;Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology;Nankai University;Key Laboratory of Opto-Electronic Information Science and Technology for Ministry of Education;NankaiUniversity;
Chen Xinliang;Yan Congbo;Geng Xinhua;Zhang Dekun;Wei Changchun;Zhao Ying;Zhang Xiaodan;Institute of Photo-Electronic Thin Film Devices and Technology;Nankai University;Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology;Nankai University;Key Laboratory of Opto-Electronic Information Science and Technology for Ministry of Education;NankaiUniversity;
..............page:41-45
Surface-plasmon-enhanced light transmission intensity with a basic grating in GaNbased LED
Li Linqing;Lü Yanwu;Department of Physics;Beijing Jiaotong University;
Li Linqing;Lü Yanwu;Department of Physics;Beijing Jiaotong University;
..............page:46-51
Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric
S. Theodore Chandra;N. B. Balamurugan;National Instruments Electronics Laboratory;Department of ECE;Thiagarajar College of Engineering;
S. Theodore Chandra;N. B. Balamurugan;National Instruments Electronics Laboratory;Department of ECE;Thiagarajar College of Engineering;
..............page:52-55
DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment
Song Xubo;Gu Guodong;Dun Shaobo;Lü Yuanjie;Han Tingting;Wang Yuangang;Xu Peng;Feng Zhihong;National Key Laboratory of ASIC;Hebei Semiconductor Research Institute;
Song Xubo;Gu Guodong;Dun Shaobo;Lü Yuanjie;Han Tingting;Wang Yuangang;Xu Peng;Feng Zhihong;National Key Laboratory of ASIC;Hebei Semiconductor Research Institute;
..............page:56-59
3-D simulation of angled strike heavy-ion induced charge collection in silicon–germanium heterojunction bipolar transistors
Zhang Jinxin;Guo Hongxia;Wen Lin;Guo Qi;Cui Jiangwei;Wang Xin;Deng Wei;Zhen Qiwen;Fan Xue;Xiao Yao;Key Laboratory of Functional Materials and Devices for Special Environments of CAS;Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;University of Chinese Academy of Sciences;Northwest Institution of Nuclear Technology;State Key Laboratory of Electronic Thin Films and Integrated Device;University of Electronic Science and Technology of China;
Zhang Jinxin;Guo Hongxia;Wen Lin;Guo Qi;Cui Jiangwei;Wang Xin;Deng Wei;Zhen Qiwen;Fan Xue;Xiao Yao;Key Laboratory of Functional Materials and Devices for Special Environments of CAS;Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;University of Chinese Academy of Sciences;Northwest Institution of Nuclear Technology;State Key Laboratory of Electronic Thin Films and Integrated Device;University of Electronic Science and Technology of China;
..............page:60-65
The impact of quantum confinement on the electrical characteristics of ultrathinchannel GeOI MOSFETs
Fan Minmin;Xu Jingping;Liu Lu;Bai Yurong;School of Optical and Electronic Information;Huazhong University of Science and Technology;
Fan Minmin;Xu Jingping;Liu Lu;Bai Yurong;School of Optical and Electronic Information;Huazhong University of Science and Technology;
..............page:66-71
Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer
Lu Feiping;Peng Yingquan;Xing Yongzhong;College of Physics and Information Science;Tianshui Normal University;Institute of Microelectronics;School of Physical Science and Technology;Lanzhou University;
Lu Feiping;Peng Yingquan;Xing Yongzhong;College of Physics and Information Science;Tianshui Normal University;Institute of Microelectronics;School of Physical Science and Technology;Lanzhou University;
..............page:72-80
Storage life of power switching transistors based on performance degradation data
Qi Haochun;Zhang Xiaoling;Xie Xuesong;Lü Changzhi;Chen Chengju;Zhao Li;Department of Electronic Information and Control Engineering;Beijing University of Technology;
Qi Haochun;Zhang Xiaoling;Xie Xuesong;Lü Changzhi;Chen Chengju;Zhao Li;Department of Electronic Information and Control Engineering;Beijing University of Technology;
..............page:81-86
Electron-leakage-related low-temperature light emission efficiency behavior in GaN-based blue light-emitting diodes
Yan Dawei;Li Lisha;Ren Jian;Wang Fuxue;Yang Guofeng;Xiao Shaoqing;Gu Xiaofeng;Key Laboratory of Advanced Process Control for Light Industry;Department of Electronic Engineering;Jiangnan University;Department of Science;Jiangnan University;
Yan Dawei;Li Lisha;Ren Jian;Wang Fuxue;Yang Guofeng;Xiao Shaoqing;Gu Xiaofeng;Key Laboratory of Advanced Process Control for Light Industry;Department of Electronic Engineering;Jiangnan University;Department of Science;Jiangnan University;
..............page:87-90
The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters
Wu Xue;Lu Wu;Li Yudong;Guo Qi;Wang Xin;Zhang Xingyao;Yu Xin;Ma Wuying;Key Laboratory of Functional Materials and Devices for Special Environments;Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;Xinjiang Key Laboratory of Electronic Information Material and Device;University of Chinese Academy of Sciences;
Wu Xue;Lu Wu;Li Yudong;Guo Qi;Wang Xin;Zhang Xingyao;Yu Xin;Ma Wuying;Key Laboratory of Functional Materials and Devices for Special Environments;Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;Xinjiang Key Laboratory of Electronic Information Material and Device;University of Chinese Academy of Sciences;
..............page:91-95
A high linearity SiGe HBT LNA for GPS receiver
Luo Yanbin;Shi Jian;Ma Chengyan;Gan Yebing;Qian Min;Institute of Microelectronics;Chinese Academy of Sciences;Hangzhou Zhongke Microelectronics Co. Ltd.;Jiaxing Lianxing Microelectronics Co. Ltd.;
Luo Yanbin;Shi Jian;Ma Chengyan;Gan Yebing;Qian Min;Institute of Microelectronics;Chinese Academy of Sciences;Hangzhou Zhongke Microelectronics Co. Ltd.;Jiaxing Lianxing Microelectronics Co. Ltd.;
..............page:96-101
High efficiency and low electromagnetic interference boost DC–DC converter
Li Yajun;Lai Xinquan;Ye Qiang;Yuan Bing;Institute of Electronic CAD;Xidian University;Key Laboratory of High-Speed Circuit Design and EMC;Ministry of Education;Xidian University;
Li Yajun;Lai Xinquan;Ye Qiang;Yuan Bing;Institute of Electronic CAD;Xidian University;Key Laboratory of High-Speed Circuit Design and EMC;Ministry of Education;Xidian University;
..............page:102-109
An integrated power divider implemented in GaAs technology
Du Zebao;Yang Hao;Zhang Haiying;Zhu Min;Institute of Microelectronics;Chinese Academy of Sciences;
Du Zebao;Yang Hao;Zhang Haiying;Zhu Min;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:110-113
A 83 GHz InP DHBT static frequency divider
Zhang Youtao;Li Xiaopeng;Zhang Min;Cheng Wei;Chen Xinyu;National Key Laboratory of Monolithic Integrated Circuits and Modules;Nanjing Electronic Devices Institute;Nanjing Electronic Devices Institute;Nanjing Guobo Electronics Co.;Ltd;
Zhang Youtao;Li Xiaopeng;Zhang Min;Cheng Wei;Chen Xinyu;National Key Laboratory of Monolithic Integrated Circuits and Modules;Nanjing Electronic Devices Institute;Nanjing Electronic Devices Institute;Nanjing Guobo Electronics Co.;Ltd;
..............page:114-117
A dynamic-biased dual-loop-feedback CMOS LDO regulator with fast transient response
Wang Han;Sun Maomao;Analog IC Design Department;Chongqing Acoustoelectric and Optoelectronic Co.;Ltd.;
Wang Han;Sun Maomao;Analog IC Design Department;Chongqing Acoustoelectric and Optoelectronic Co.;Ltd.;
..............page:118-126
A low voltage low power up-conversion mixer for WSN application
Wu Chenjian;Li Zhiqun;Sun Ge;Institute of RF-& OE-ICs;Southeast University;Jiangsu Provincial Key Laboratory of Sensor Network Technology;Soochow University;
Wu Chenjian;Li Zhiqun;Sun Ge;Institute of RF-& OE-ICs;Southeast University;Jiangsu Provincial Key Laboratory of Sensor Network Technology;Soochow University;
..............page:127-131
A 16-bit sigma–delta modulator applied in micro-machined inertial sensors
Xu Honglin;Fu Qiang;Liu Hongna;Yin Liang;Wang Pengfei;Liu Xiaowei;MEMS Center;Harbin Institute of Technology;Key Laboratory of Micro-Systems and Micro-Structures Manufacturing;
Xu Honglin;Fu Qiang;Liu Hongna;Yin Liang;Wang Pengfei;Liu Xiaowei;MEMS Center;Harbin Institute of Technology;Key Laboratory of Micro-Systems and Micro-Structures Manufacturing;
..............page:132-137
Compact trimming design of a high-precision reference
Ren Guodong;Zhao Shifang;Pu Zhongshen;Wei Zhiqiang;Lanzhou University of Technology;
Ren Guodong;Zhao Shifang;Pu Zhongshen;Wei Zhiqiang;Lanzhou University of Technology;
..............page:138-141
A single-channel 10-bit 160 MS/s SAR ADC in 65 nm CMOS
Lu Yuxiao;Sun Lu;Li Zhe;Zhou Jianjun;Centre for Analog/Radio Frequency Integrated Circuits;Shanghai Jiao Tong University;
Lu Yuxiao;Sun Lu;Li Zhe;Zhou Jianjun;Centre for Analog/Radio Frequency Integrated Circuits;Shanghai Jiao Tong University;
..............page:142-149
A method for timing constrained redundant via insertion
Wang Junping;Xu Dan;Su Yongbang;School of Telecommunications Engineering;Xidian University;School of Microelectronics;Xidian University;
Wang Junping;Xu Dan;Su Yongbang;School of Telecommunications Engineering;Xidian University;School of Microelectronics;Xidian University;
..............page:150-154
Active quenching circuit for a InGaAs single-photon avalanche diode
Zheng Lixia;Wu Jin;Shi Longxing;Xi Shuiqing;Liu Siyang;Sun Weifeng;Wuxi Branch;Southeast University;National ASIC System Engineering Research Center;Southeast University;
Zheng Lixia;Wu Jin;Shi Longxing;Xi Shuiqing;Liu Siyang;Sun Weifeng;Wuxi Branch;Southeast University;National ASIC System Engineering Research Center;Southeast University;
..............page:155-160
Removal of residual CuO particles on the post CMP wafer surface of multi-layered copper
Li Yan;Sun Ming;Niu Xinhuan;Liu Yuling;He Yangang;Li Hailong;Wang Aochen;Li Hongbo;Institute of Microelectronics;Hebei University of Technology;
Li Yan;Sun Ming;Niu Xinhuan;Liu Yuling;He Yangang;Li Hailong;Wang Aochen;Li Hongbo;Institute of Microelectronics;Hebei University of Technology;
..............page:161-168
Thermal conductivity of PECVD silicon-rich silicon nitride films measured with a SiO2/SixNy bimaterial microbridge test structure
Han Jianqiang;Li Yan;Li Senlin;Li Qing;College of Mechanical & Electrical Engineering;China Jiliang University;
Han Jianqiang;Li Yan;Li Senlin;Li Qing;College of Mechanical & Electrical Engineering;China Jiliang University;
..............page:169-172