1674-4926
2014 Issue 12
..............page:2
Modeling the defect distribution and degradation of Cd Te ultrathin films
Nima E.Gorji;Department of New Technologies;University of Tabriz;
Nima E.Gorji;Department of New Technologies;University of Tabriz;
..............page:5-8
First principles calculations of electronic and optical properties of GaN1-xBix alloys
Yan Yingce;Wang Qi;Ma Huifang;Department of Physics;Taiyuan Normal University;StateKey Laboratory of Information Photonics and Optical Communications;Beijing University of Posts and Telecommunications;
Yan Yingce;Wang Qi;Ma Huifang;Department of Physics;Taiyuan Normal University;StateKey Laboratory of Information Photonics and Optical Communications;Beijing University of Posts and Telecommunications;
..............page:9-11
Structural and morphological characterizations of Zn O nanopowder synthesized by hydrothermal route using inorganic reactants
D.Djouadi;M.Meddouri;A.Chelouche;L.Hammiche;A.Aksas;Laboratoire de Génie de l’Environnement;Université de Béjaia;Algérie;
D.Djouadi;M.Meddouri;A.Chelouche;L.Hammiche;A.Aksas;Laboratoire de Génie de l’Environnement;Université de Béjaia;Algérie;
..............page:12-16
Theoretical investigation of some parameters into the behavior of quantum dot solar cells
A.Nasr;A.Aly;Radiation Engineering Department;NCRRT;Atomic Energy Authority;Egypt;College of Computer;Qassim University;P.O.B.6688;Buryadah 51453;KSA;Power Electronics and Energy Conversion Department;ERI;NRCB;Egypt;
A.Nasr;A.Aly;Radiation Engineering Department;NCRRT;Atomic Energy Authority;Egypt;College of Computer;Qassim University;P.O.B.6688;Buryadah 51453;KSA;Power Electronics and Energy Conversion Department;ERI;NRCB;Egypt;
..............page:17-24
Impact of source and drain contact thickness on the performance of organic thin film transistors
Poornima Mittal;Y.S.Negi;R.K.Singh;Department of Electronics & Communication Engineering;Graphic Era University;Dehradun–248002;India;Department of Electronics & Communication Engineering;Uttarakhand Technical University;Dehradun–248002;India;Department of Polymer and Process Engineering;Indian Institute of Technology;Roorkee–246776;India;
Poornima Mittal;Y.S.Negi;R.K.Singh;Department of Electronics & Communication Engineering;Graphic Era University;Dehradun–248002;India;Department of Electronics & Communication Engineering;Uttarakhand Technical University;Dehradun–248002;India;Department of Polymer and Process Engineering;Indian Institute of Technology;Roorkee–246776;India;
..............page:25-31
Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
Zhao Jingtao;Lin Zhaojun;Luan Chongbiao;Yang Ming;Zhou Yang;Lü Yuanjie;Feng Zhihong;School of Physics;Shandong University;National Key Laboratory of Application Specific Integrated Circuit;Hebei Semiconductor Research Institute;
Zhao Jingtao;Lin Zhaojun;Luan Chongbiao;Yang Ming;Zhou Yang;Lü Yuanjie;Feng Zhihong;School of Physics;Shandong University;National Key Laboratory of Application Specific Integrated Circuit;Hebei Semiconductor Research Institute;
..............page:32-35
Effect of COOH-functionalized SWCNT addition on the electrical and photovoltaic characteristics of Malachite Green dye based photovoltaic cells
S.Chakraborty;N.B.Manik;Condensed Matter Physics Research Center;Department of Physics;Jadavpur University;
S.Chakraborty;N.B.Manik;Condensed Matter Physics Research Center;Department of Physics;Jadavpur University;
..............page:36-41
A gate current 1/f noise model for GaN/AlGaN HEMTs
Liu Yu’an;Zhuang Yiqi;School of Microelectronics;Xidian University;
Liu Yu’an;Zhuang Yiqi;School of Microelectronics;Xidian University;
..............page:42-46
Static characteristics and short channel effect in enhancement-mode AlN/GaN/AlN N-polar MISFET with self-aligned source/drain regions
Li Bin;Wei Lan;Wen Cai;School of Science;Southwest University of Science and Technology;
Li Bin;Wei Lan;Wen Cai;School of Science;Southwest University of Science and Technology;
..............page:47-51
The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
Yu Yingxia;Lin Zhaojun;Lü Yuanjie;Feng Zhihong;Luan Chongbiao;Yang Ming;Wang Yutang;School of Physics;Shandong University;Scienceand Technologyon ASIC Laboratory;Hebei Semiconductor Research Institute;
Yu Yingxia;Lin Zhaojun;Lü Yuanjie;Feng Zhihong;Luan Chongbiao;Yang Ming;Wang Yutang;School of Physics;Shandong University;Scienceand Technologyon ASIC Laboratory;Hebei Semiconductor Research Institute;
..............page:52-56
Waveguide-type optical passive ring resonator gyro using frequency modulation spectroscopy technique
Ning Liang;Guo Lijun;Kong Mei;Chen Tuoyuan;Department of Optoelectronics and Information Engineering;Changchun University of Science and Technology;
Ning Liang;Guo Lijun;Kong Mei;Chen Tuoyuan;Department of Optoelectronics and Information Engineering;Changchun University of Science and Technology;
..............page:57-60
FELERION: a new approach for leakage power reduction
Anjana R;Ajay Somkuwar;Department of Electronics and Communication;Dr.K.N Modi Universisy;Rajasthan;India;Department of Electronics and Communication;MANIT;Bhopal;Madhya Pradesh;India;
Anjana R;Ajay Somkuwar;Department of Electronics and Communication;Dr.K.N Modi Universisy;Rajasthan;India;Department of Electronics and Communication;MANIT;Bhopal;Madhya Pradesh;India;
..............page:61-65
A fully-differential phase-locked loop frequency synthesizer for 60-GHz wireless communication
Kuang Lixue;Chi Baoyong;Chen Lei;Jia Wen;Wang Zhihua;Research Institute of Tsinghua University in Shenzhen;
Kuang Lixue;Chi Baoyong;Chen Lei;Jia Wen;Wang Zhihua;Research Institute of Tsinghua University in Shenzhen;
..............page:66-71
A fractional-N frequency synthesizer for wireless sensor network nodes
Ma Xiao;Du Zhankun;Liu Chang;Liu Ke;Yan Yuepeng;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;
Ma Xiao;Du Zhankun;Liu Chang;Liu Ke;Yan Yuepeng;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:72-77
A flat gain GaN MMIC power amplifier for X band application
Ge Qin;Liu Xinyu;Zheng Yingkui;Ye Chuan;Nanjing Electronic Devices Institute;Institute of Microelectronics Chinese Academy of Sciences;
Ge Qin;Liu Xinyu;Zheng Yingkui;Ye Chuan;Nanjing Electronic Devices Institute;Institute of Microelectronics Chinese Academy of Sciences;
..............page:78-82
Solid-state wideband GaN HEMT power amplifier with a novel negative feedback structure
Cheng Zhiqun;Jia Minshi;Luan Ya;Lian Xinxiang;Key Laboratory of RF Circuit and System;Education Ministry;Hangzhou Dianzi University;
Cheng Zhiqun;Jia Minshi;Luan Ya;Lian Xinxiang;Key Laboratory of RF Circuit and System;Education Ministry;Hangzhou Dianzi University;
..............page:83-86
A 220–1100 MHz low phase-noise frequency synthesizer with wide-band VCO and selectable I/Q divider
Chen Hua;Gong Renjie;Cheng Xu;Zhang Yulin;Gao Zhong;Guo Guiliang;Yan Yuepeng;Institute of Microelectronics;Chinese Academy of Sciences;School of Electronics and Information Engineering;Harbin Institute of Technology;
Chen Hua;Gong Renjie;Cheng Xu;Zhang Yulin;Gao Zhong;Guo Guiliang;Yan Yuepeng;Institute of Microelectronics;Chinese Academy of Sciences;School of Electronics and Information Engineering;Harbin Institute of Technology;
..............page:87-97
A 900 MHz fractional-N synthesizer for UHF transceiver in 0.18μm CMOS technology
Mao Xurui;Huang Beiju;Chen Hongda;Institute of Semiconductors;Chinese Academy of Sciences;
Mao Xurui;Huang Beiju;Chen Hongda;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:98-104
A wide locking range and low DC power injection-locked frequency tripler for K-band application
Zhou Zibo;Li Wei;Li Ning;Ren Junyan;State Key Laboratory of ASIC & System;Fudan University;
Zhou Zibo;Li Wei;Li Ning;Ren Junyan;State Key Laboratory of ASIC & System;Fudan University;
..............page:105-109
Driving circuit with high accuracy and large driving capability for high voltage buck regulators
Li Yajun;Lai Xinquan;Ye Qiang;Yuan Bing;Institute of Electronic CAD Xidian University;Key Laboratory of High-Speed Circuit Design and EMC Ministry of Education Xidian University;
Li Yajun;Lai Xinquan;Ye Qiang;Yuan Bing;Institute of Electronic CAD Xidian University;Key Laboratory of High-Speed Circuit Design and EMC Ministry of Education Xidian University;
..............page:110-117
A high linearity downconverter for digital broadcasting system
Li Songting;Li Jiancheng;Gu Xiaochen;Wang Hongyi;Zhuang Zhaowen;College of Electronic Science and Engineering;National University of Defense Technology;
Li Songting;Li Jiancheng;Gu Xiaochen;Wang Hongyi;Zhuang Zhaowen;College of Electronic Science and Engineering;National University of Defense Technology;
..............page:118-126
An IP-oriented 11-bit 160 MS/s 2-channel current-steering DAC
Xu Ning;Li Fule;Zhang Chun;Wang Zhihua;Institute of Microelectronics;Tsinghua University;
Xu Ning;Li Fule;Zhang Chun;Wang Zhihua;Institute of Microelectronics;Tsinghua University;
..............page:127-131
A 4×2 switch matrix in QFN24 package for 0.5–3 GHz application
Liu Yuzhe;Mu Pengfei;Gong Renjie;Wan Jing;Zhang Yulin;Yan Yuepeng;Institute of Microelectronics;Chinese Academy of Sciences;
Liu Yuzhe;Mu Pengfei;Gong Renjie;Wan Jing;Zhang Yulin;Yan Yuepeng;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:132-136
IC design of low power, wide tuning range VCO in 90 nm CMOS technology
Li Zhu;Wang Zhigong;Li Zhiqun;Li Qin;Liu Faen;Institute of RF- & OE-ICs Southeast University;Nanjing University of Science and Technology;
Li Zhu;Wang Zhigong;Li Zhiqun;Li Qin;Liu Faen;Institute of RF- & OE-ICs Southeast University;Nanjing University of Science and Technology;
..............page:137-142
Reducing the mechanical action of polishing pressure and abrasive during copper chemical mechanical planarization
Jiang Mengting;Liu Yuling;Institute of Microelectronics;Hebei University of Technology;
Jiang Mengting;Liu Yuling;Institute of Microelectronics;Hebei University of Technology;
..............page:143-147
A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography
Yu Mingyan;Zhao Shirui;Jing Yupeng;Shi Yunbo;Chen Baoqin;The Higher Educational Key Laboratory for Measuring & Control Technology and Instrumentations of Heilongjiang Province;Harbin University of Scienceand Technology;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
Yu Mingyan;Zhao Shirui;Jing Yupeng;Shi Yunbo;Chen Baoqin;The Higher Educational Key Laboratory for Measuring & Control Technology and Instrumentations of Heilongjiang Province;Harbin University of Scienceand Technology;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:148-153
Mechanism analysis of the affect the copper line surface roughness after FA/O alkaline barrier CMP
Gao Jiaojiao;Liu Yuling;Wang Chenwei;Cui Jin;Institute of Microelectronics Hebei University of Technology;Institute of Static Electricity Hebei University;
Gao Jiaojiao;Liu Yuling;Wang Chenwei;Cui Jin;Institute of Microelectronics Hebei University of Technology;Institute of Static Electricity Hebei University;
..............page:154-158
..............page:159-174
..............page:175-194