Microwave annealing effects on ZnO films deposited by atomic layer deposition
Zhao Shirui;Dong Yabin;Yu Mingyan;Guo Xiaolong;Xu Xinwei;Jing Yupeng;Xia Yang;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;University of Chinese Academy of Sciences;

..............page:5-8

Structural,morphological,optical and photoluminescent properties of spray-deposited ZnSe thin film
G.M.Lohar;S.K.Shinde;V.J.Fulari;Holography and Material Research Laboratory;Department of Physics;Shivaji University;

..............page:9-13

Effects of defects on the electronic properties of WTe₂ armchair nanoribbons
Bahniman Ghosh;Abhishek Gupta;Bhupesh Bishnoi;Microelectronics Research Center;10100;Burnet Road;Bldg.160;University of Texas at Austin;Austin;TX;78758;USA;Department of Electrical Engineering;Indian Institute of Technology Kanpur;

..............page:14-19

A photoluminescence study of plasma reactive ion etching-induced damage in GaN
Z.Mouffak;A.Bensaoula;L.Trombetta;ECE Department;California State University;Physics and ECE Departments;University of Houston;ECE Department;University of Houston;

..............page:20-23

Indium antimonide based HEMT for RF applications
T.D.Subash;T.Gnanasekaran;K.N.S.K College of Engineering;Nagercoil-629901;India;RMK College of Engineering and Technology;Tamil Nadu;601206;India;

..............page:24-26

Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD
Liu Bo;Yin Jiayun;Lü Yuanjie;Dun Shaobo;Zhang Xiongwen;Feng Zhihong;Cai Shujun;National Key Laboratory of ASIC;Hebei Semiconductor Research Institute;

..............page:27-30

Growth and characterization of InGaN back barrier HEMTs structure with a compositionally step-graded AlGaN layer
Tang Jian;Wang Xiaoliang;Xiao Hongling;School of Physics & Electronics;Yancheng Teachers University;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;

..............page:31-35

Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transistor
Shibir Basak;Pranav Kumar Asthana;Yogesh Goswami;Bahniman Ghosh;Department of Electrical Engineering;Indian Institute of Technology Kanpur;Microelectronics Research Center;10100;Burnet Road;Bldg.160;University of Texas at Austin;

..............page:36-43

Comparative study of leakage power in CNTFET over MOSFET device
Sanjeet Kumar Sinha;Saurabh Chaudhury;Department of Electrical Engineering;NIT Silchar;Assam-788010;India;

..............page:44-49

Compact analytical model for single gate AlInSb/InSb high electron mobility transistors
S.Theodore Chandra;N.B.Balamurugan;G.Subalakshmi;T.Shalini;G.Lakshmi Priya;National Instruments Electronics Laboratory;Department of ECE;Thiagarajar College of Engineering;

..............page:50-54

The combined effects of halo and linear doping effects on the high-frequency and switching performance in ballistic CNTFETs
Wang Wei;Zhang Lu;Wang Xueying;Wang Zhubing;Zhang Ting;Li Na;Yang Xiao;Yue Gongshu;College of Electronic Science Engineering;Nanjing University of Posts and Telecommunications;College of Telecommunications and information Engineering;Nanjing University of Posts and Telecommunications;

..............page:55-62

A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET
Shiromani Balmukund Rahi;Bahniman Ghosh;Pranav Asthana;Department of Electrical Engineering;Indian Institute of Technology Kanpur;Microelectronics Research Center;10100;Burnet Road;Bldg.160;University of Texas at Austin;

..............page:63-67

On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX
Wu Hao;Xu Miao;Wan Guangxing;Zhu Huilong;Zhao Lichuan;Tong Xiaodong;Zhao Chao;Chen Dapeng;Ye Tianchun;Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;

..............page:68-73

Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure
Fu Binglei;Liu Naixin;Liu Zhe;Li Jinmin;Wang Junxi;Research and Development Center for Semiconductor Lighting;Chinese Academy of Sciences;

..............page:74-77

Fabrication of four-channel DFB laser array using nanoimprint technology for 1.3μm CWDM systems
Zhao Jianyi;Chen Xin;Zhou Ning;Huang Xiaodong;Liu Wen;Wuhan National Laboratory for Optoelectronics;Huazhong University of Science and Technology;School of Optical and Electronic Information;Accelink Technologies Company;Ltd;University of Science and Technology of China;Institute of Advanced Technology;

..............page:78-84

Photoelectric characteristics of an inverse U-shape buried doping design for crosstalk suppression in pinned photodiodes
Cao Chen;Zhang Bing;Li Xin;Wu Longsheng;Wang Junfeng;Xi’an Microelectronics Technology Institute;

..............page:85-93

Process techniques of charge transfer time reduction for high speed CMOS image sensors
Cao Zhongxiang;Li Quanliang;Han Ye;Qin Qi;Feng Peng;Liu Liyuan;Wu Nanjian;State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;

..............page:94-101

An all-digital synthesizable baseband for a delay-based LINC transmitter with reconfigurable resolution
Han Yue;Qiao Shushan;Hei Yong;Institute of Microelectronics;Chinese Academy of Sciences;

..............page:102-110

A low-power CMOS smart temperature sensor for RFID application
Xie Liangbo;Liu Jiaxin;Wang Yao;Wen Guangjun;Centre for RFIC and System Technology;School of Communication and Information Engineering;University of Electronic Science and Technology of China;

..............page:111-117

A high power active circulator using GaN MMIC power amplifiers
Gu Liming;Che Wenquan;Fan-Hsiu Huang;Hsien-Chin Chiu;School of Electronic and Optical Engineering;Nanjing University of Science and Technology;Department of Electronics Engineering;Chang Gung University;

..............page:118-122

A low-power DCO using inverter interlaced cascaded delay cell
Huang Qiang;Fan Tao;Dai Xiangming;Yuan Guoshun;Institute of Microelectronics;Chinese Academy of Sciences;

..............page:123-128

An improved fully integrated,high-speed,dual-modulus divider
Sun Zheng;Xu Yong;Ma Guangyan;Shi Hui;Zhao Fei;Lin Ying;College of Communication Engineering;PLA University of Science and Technology;College of Field Engineering;PLA University of Science and Technology;College of Command Information Systems;PLA University of Science and Technology;

..............page:129-133

A high linearity dual-band mixer for IMT-A and UWB systems
Tang Xusheng;Wang Xiaoyu;Yang Jiang;Tang Xin;Huang Fengyi;RF & OEIC Research Institute;National Mobile Communications Research Laboratory;Southeast University;

..............page:134-138

A1.2V 600nW 12-bit 2kS/s incremental ADC for biosensor application
Huang Ting;Jin Lele;Li Hui;Diao Shengxi;Wang Guoxing;Yao Libin;He Lin;Department of Electronic Science and Technology;University of Science and Technology of China;School of Microelectronics;Shanghai Jiao Tong University;Kunming Institute of Physics;

..............page:139-144

An analog front end with a 12-bit 3.2-MS/s SAR ADC for a power line communication system
Chen Huabin;Xiang Jixuan;Xue Xiangyan;Chen Chixiao;Ye Fan;Xu Jun;Ren Junyan;State-Key Laboratory of ASIC and System;Fudan University;

..............page:145-152

Pixel-level A/D conversion using voltage reset technique
Li Minzeng;Li Fule;Zhang Chun;Wang Zhihua;Institute of Microelectronics;Tsinghua University;

..............page:153-157

A single lithium-ion battery protection circuit with high reliability and low power consumption
Jiang Jinguang;Li Sen;International School of Software;Wuhan University;Suzhou Institute;Wuhan University;School of Physics and Technology;Wuhan University;

..............page:158-164

VCCS controlled LDO with small on-chip capacitor
Li Qiuli;Qian Yao;Lü Danzhu;Hong Zhiliang;State Key Laboratory of ASIC and Systems;Fudan University;

..............page:165-171

Surface roughness of optical quartz substrate by chemical mechanical polishing
Duan Bo;Zhou Jianwei;Liu Yuling;Sun Mingbin;Zhang Yufeng;Institute of Microelectronics;Hebei University of Technology;

..............page:172-176

Evaluation of planarization performance for a novel alkaline copper slurry under a low abrasive concentration
Jiang Mengting;Liu Yuling;Yuan Haobo;Chen Guodong;Liu Weijuan;Institute of Microelectronics;Hebei University of Technology;

..............page:177-182

Effect of three kinds of guanidinium salt on the properties of a novel low-abrasive alkaline slurry for barrier CMP
Chen Guodong;Liu Yuling;Niu Xinhuan;Institute of Microelectronics;Hebei University of Technology;

..............page:183-187

Kinetic process of nitridation on the α-sapphire surface
Tang Xingzhou;Li Shuping;Kang Junyong;Chen Jiaqi;Department of Physics;Xiamen University;Key Laboratory of Semiconductor Materials and Application of Fujian Province;

..............page:188-191

Effect of chelating agent concentration in alkaline Cu CMP process under the condition of different applied pressures
Yuan Haobo;Liu Yuling;Jiang Mengting;Liu Weijuan;Chen Guodong;Institute of Microelectronics;Hebei University of Technology;

..............page:192-196