1674-4926
2014 Issue 10
Properties of polaron in a triangular quantum well induced by the Rashba effect
Zhang Hairui;Sun Yong;Department of Mathematics;Huhhot University of Nationalities;College of Physics and Electronic Information;Inner Mongolia National University;
Zhang Hairui;Sun Yong;Department of Mathematics;Huhhot University of Nationalities;College of Physics and Electronic Information;Inner Mongolia National University;
..............page:5-8
First-principles study on the synergistic effects of codoped anatase TiO2 photocatalysts codoped with N/Vor C/Cr
Xu Wenhui;Ma Xinguo;Wu Tong;He Zhiqi;Wang Huihu;Huang Chuyun;School of Science;Hubei University of Technology;School of Mechanical Engineering;Hubei University of Technology;Hubei Collaborative Innovation Center for High-Efficient Utilization of Solar Energy;Hubei University of Technology;
Xu Wenhui;Ma Xinguo;Wu Tong;He Zhiqi;Wang Huihu;Huang Chuyun;School of Science;Hubei University of Technology;School of Mechanical Engineering;Hubei University of Technology;Hubei Collaborative Innovation Center for High-Efficient Utilization of Solar Energy;Hubei University of Technology;
..............page:9-15
A combined experimental-computational study on nitrogen doped Cu2O as the wide-spectrum absorption material
Zhang Ping;Zhou Yurong;Yan Qingbo;Liu Fengzhen;Li Jingwen;Dong Gangqiang;University of Chinese Academy of Sciences;Beijing University of Technology;
Zhang Ping;Zhou Yurong;Yan Qingbo;Liu Fengzhen;Li Jingwen;Dong Gangqiang;University of Chinese Academy of Sciences;Beijing University of Technology;
..............page:16-20
Charge storage characteristics of Ni nanocrystals formed by synchronous crystallization
Cheng Peihong;Huang Shihua;Lu Fang;Physics Department;Zhejiang Normal University;Surface Physics National Key Laboratory;Fudan University;
Cheng Peihong;Huang Shihua;Lu Fang;Physics Department;Zhejiang Normal University;Surface Physics National Key Laboratory;Fudan University;
..............page:21-26
Te doped ultrabroad band tunnel junction
Lu Hongbo;Shen Jingman;Li Xinyi;Zhang Wei;Zhou Dayong;Sun Lijie;Chen Kaijian;Research Center for Photovoltaics;Shanghai Institute of Space Power-Source;
Lu Hongbo;Shen Jingman;Li Xinyi;Zhang Wei;Zhou Dayong;Sun Lijie;Chen Kaijian;Research Center for Photovoltaics;Shanghai Institute of Space Power-Source;
..............page:27-29
Model development for analyzing 2DEG sheet charge density and threshold voltage considering interface DOS for AlInN/GaN MOSHEMT
Devashish Pandey;T. R. Lenka;Department of Electronics and Communication Engineering;National Institute of Technology Silchar;
Devashish Pandey;T. R. Lenka;Department of Electronics and Communication Engineering;National Institute of Technology Silchar;
..............page:30-33
Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon–germanium substrates
Pramod Kumar Tiwari;Gopi Krishna Saramekala;Sarvesh Dubey;Anand Kumar Mukhopadhyay;National Institute of Technology;Rourkela;Department of Electronics and Communication Engineering;Faculty of Electronics and Communication;SRM University;
Pramod Kumar Tiwari;Gopi Krishna Saramekala;Sarvesh Dubey;Anand Kumar Mukhopadhyay;National Institute of Technology;Rourkela;Department of Electronics and Communication Engineering;Faculty of Electronics and Communication;SRM University;
..............page:34-40
Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs
Zhang Yamin;Feng Shiwei;Zhu Hui;Gong Xueqin;Deng Bing;Ma Lin;Institute of Semiconductor Device Reliability Physics;College of Electronic Information & Control Engineering;Beijing University of Technology;
Zhang Yamin;Feng Shiwei;Zhu Hui;Gong Xueqin;Deng Bing;Ma Lin;Institute of Semiconductor Device Reliability Physics;College of Electronic Information & Control Engineering;Beijing University of Technology;
..............page:41-44
ADO-phosphonic acid self-assembled monolayer modified dielectrics for organic thin film transistors
Li Zhefeng;Luo Xianye;School of Chemistry and Chemical Engineering;Chongqing University;
Li Zhefeng;Luo Xianye;School of Chemistry and Chemical Engineering;Chongqing University;
..............page:45-48
Simulations of backgate sandwich nanowire MOSFETs with improved device performance
Zhao Hengliang;Zhu Huilong;Zhong Jian;Ma Xiaolong;Wei Xing;Zhao Chao;Chen Dapeng;Ye Tianchun;Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
Zhao Hengliang;Zhu Huilong;Zhong Jian;Ma Xiaolong;Wei Xing;Zhao Chao;Chen Dapeng;Ye Tianchun;Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:49-54
A novel multiple super junction power device structure with low specific on-resistance
Zhu Hui;Li Haiou;Li Qi;Huang Yuanhao;Xu Xiaoning;Zhao Hailiang;Guangxi Experiment Center of Information Science;Guilin University of Electronic Technology;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
Zhu Hui;Li Haiou;Li Qi;Huang Yuanhao;Xu Xiaoning;Zhao Hailiang;Guangxi Experiment Center of Information Science;Guilin University of Electronic Technology;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:55-59
Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM
Sun Pengxiao;Liu Su;Li Ling;Liu Ming;School of Physical Science and Technology;Lanzhou University;Institute of Microelectronics;Chinese Academy of Sciences;
Sun Pengxiao;Liu Su;Li Ling;Liu Ming;School of Physical Science and Technology;Lanzhou University;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:60-63
Cantilever with immobilized antibody for liver cancer biomarker detection
Wang Shuaipeng;Wang Jingjing;Zhu Yinfang;Yang Jinling;Yang Fuhua;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory of Transducer Technology;
Wang Shuaipeng;Wang Jingjing;Zhu Yinfang;Yang Jinling;Yang Fuhua;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory of Transducer Technology;
..............page:64-69
Room temperature quantum cascade detector operating at 4.3 μm
Wang Xuejiao;Liu Junqi;Zhai Shenqiang;Liu Fengqi;Wang Zhanguo;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;
Wang Xuejiao;Liu Junqi;Zhai Shenqiang;Liu Fengqi;Wang Zhanguo;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:70-73
Monolithic integration of a silica-based 16-channel VMUX/VDMUX on quartz substrate
Dai Hongqing;An Junming;Wang Yue;Zhang Jiashun;Wang Liangliang;Wang Hongjie;Li Jianguang;Wu Yuanda;Zhong Fei;Zha Qiang;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;Henan Shi Jia Photons Technology Co.;Ltd;
Dai Hongqing;An Junming;Wang Yue;Zhang Jiashun;Wang Liangliang;Wang Hongjie;Li Jianguang;Wu Yuanda;Zhong Fei;Zha Qiang;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;Henan Shi Jia Photons Technology Co.;Ltd;
..............page:74-77
An electro-optic directed decoder based on two cascaded microring resonators
Zhang Fanfan;Zhou Ping;Chen Qiaoshan;Yang Lin;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;
Zhang Fanfan;Zhou Ping;Chen Qiaoshan;Yang Lin;State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:78-83
The storage lifetime model based on multi-performance degradation parameters
Qi Haochun;Zhang Xiaoling;Xie Xuesong;Lü Changzhi;Department of Electronic Information and Control Engineering;Beijing University of Technology;The Chinese People’s Liberation Army 68129 Troops;
Qi Haochun;Zhang Xiaoling;Xie Xuesong;Lü Changzhi;Department of Electronic Information and Control Engineering;Beijing University of Technology;The Chinese People’s Liberation Army 68129 Troops;
..............page:84-88
An inductorless CMOS programmable-gain amplifier with a>3 GHz bandwidth for60 GHz wireless transceivers
Zhu Wei;Chi Baoyong;Kuang Lixue;Jia Wen;Wang Zhihua;Tsinghua National Laboratory for Information Science and Technology;Institute of Microelectronics;Tsinghua University;Research Institute of Tsinghua University in Shenzhen;
Zhu Wei;Chi Baoyong;Kuang Lixue;Jia Wen;Wang Zhihua;Tsinghua National Laboratory for Information Science and Technology;Institute of Microelectronics;Tsinghua University;Research Institute of Tsinghua University in Shenzhen;
..............page:89-94
Design and analysis of 20 Gb/s inductorless limiting amplifier in 65 nm CMOS technology
He Rui;Xu Jianfei;Yan Na;Sun Jie;Bian Liqian;Min Hao;Department of Microelectronic;Fudan University;Jinan Ruitong Electric Service LTD;
He Rui;Xu Jianfei;Yan Na;Sun Jie;Bian Liqian;Min Hao;Department of Microelectronic;Fudan University;Jinan Ruitong Electric Service LTD;
..............page:95-101
Lower-power, high-linearity class-AB current-mode programmable gain amplifier
Wu Yiqiang;Wang Zhigong;Wang Junliang;Ma Li;Xu Jian;Tang Lu;Institution of RF- & OE-ICs;Southeast University;
Wu Yiqiang;Wang Zhigong;Wang Junliang;Ma Li;Xu Jian;Tang Lu;Institution of RF- & OE-ICs;Southeast University;
..............page:102-108
A 2.52-mW continuous-time Σ△ modulator with 72 dB dynamic range for FM radio
Chen Mingyi;Zhou Liguo;Bian Chenghao;Yan Jun;Shi Yin;Institute of Semiconductors;Chinese Academy of Sciences;
Chen Mingyi;Zhou Liguo;Bian Chenghao;Yan Jun;Shi Yin;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:109-117
Ka-band full-360° analog phase shifter with low insertion loss
Cao Mengyi;Lu Yang;Wei Jiaxing;Zheng Jiaxin;Ma Xiaohua;Hao Yue;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;School of Advanced Materials and Nanotechnology;Xidian University;
Cao Mengyi;Lu Yang;Wei Jiaxing;Zheng Jiaxin;Ma Xiaohua;Hao Yue;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;School of Advanced Materials and Nanotechnology;Xidian University;
..............page:118-122
Design of improved CMOS phase-frequency detector and charge-pump for phase-locked loop
Liu Faen;Wang Zhigong;Li Zhiqun;Li Qin;Chen Sheng;Engineering Research Center of RF-ICs and RF-Systems;Ministry of Education;
Liu Faen;Wang Zhigong;Li Zhiqun;Li Qin;Chen Sheng;Engineering Research Center of RF-ICs and RF-Systems;Ministry of Education;
..............page:123-129
A reconfigurable 256×256 image sensor controller that is compatible for depth measurement
Chen Zhe;Di Shan;Shi Cong;Liu Liyuan;Wu Nanjian;State Key Laboratory for Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;
Chen Zhe;Di Shan;Shi Cong;Liu Liyuan;Wu Nanjian;State Key Laboratory for Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:130-135
A 12-bit compact column-parallel SAR ADC with dynamic power control technique for high-speed CMOS image sensors
Li Quanliang;Liu Liyuan;Han Ye;Cao Zhongxiang;Wu Nanjian;State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;
Li Quanliang;Liu Liyuan;Han Ye;Cao Zhongxiang;Wu Nanjian;State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:136-143
A low-power time-domain VCO-based ADC in 65 nm CMOS
Wang Chenluan;Diao Shengxi;Lin Fujiang;Department of Electronic Science & Technology;University of Science and Technology of China;
Wang Chenluan;Diao Shengxi;Lin Fujiang;Department of Electronic Science & Technology;University of Science and Technology of China;
..............page:144-149
Design and implementation of a high sensitivity fully integrated passive UHF RFID tag
Li Shoucheng;Wang Xin’an;Lin Ke;Shen Jinpeng;Zhang Jinhai;The Key Laboratory of Integrated Microsystems;Peking University Shenzhen Graduate School;
Li Shoucheng;Wang Xin’an;Lin Ke;Shen Jinpeng;Zhang Jinhai;The Key Laboratory of Integrated Microsystems;Peking University Shenzhen Graduate School;
..............page:150-155
Design and analysis of a dual mode CMOS field programmable analog array
Cheng Xiaoyan;Yang Haigang;Yin Tao;Wu Qisong;Zhang Hongfeng;Liu Fei;Institute of Electronics;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
Cheng Xiaoyan;Yang Haigang;Yin Tao;Wu Qisong;Zhang Hongfeng;Liu Fei;Institute of Electronics;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
..............page:156-166
An implantable neurostimulator with an integrated high-voltage inductive powerrecovery frontend
Wang Yuan;Zhang Xu;Liu Ming;Li Peng;Chen Hongda;Institute of Semiconductors;Chinese Academy of Sciences;
Wang Yuan;Zhang Xu;Liu Ming;Li Peng;Chen Hongda;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:167-174
A 410 μW, 70 dB SNR high performance analog front-end for portable audio application
Dai Lan;Liu Wenkai;Lu Yan;College of Information Engineering;North China University of Technology;
Dai Lan;Liu Wenkai;Lu Yan;College of Information Engineering;North China University of Technology;
..............page:175-180
An ultralow power wireless intraocular pressure monitoring system
Liu Demeng;Mei Niansong;Zhang Zhaofeng;Micro-Nano Device Research Center;Shanghai Advanced Research Institute;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
Liu Demeng;Mei Niansong;Zhang Zhaofeng;Micro-Nano Device Research Center;Shanghai Advanced Research Institute;Chinese Academy of Sciences;University of Chinese Academy of Sciences;
..............page:181-185
Combining a multi deposition multi annealing technique with a scavenging(Ti) to improve the high-k/metal gate stack performance for a gate-last process
Zhang Shu Xiang;Yang Hong;Tang Bo;Tang Zhaoyun;Xu Yefeng;Xu Jing;Yan Jiang;Institute of Microelectronics;Chinese Academy of Sciences;
Zhang Shu Xiang;Yang Hong;Tang Bo;Tang Zhaoyun;Xu Yefeng;Xu Jing;Yan Jiang;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:186-190
The effects of process condition of top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks
Ma Xueli;Yang Hong;Wang Wenwu;Yin Huaxiang;Zhu Huilong;Zhao Chao;Chen Dapeng;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;
Ma Xueli;Yang Hong;Wang Wenwu;Yin Huaxiang;Zhu Huilong;Zhao Chao;Chen Dapeng;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:191-193
Slurry components of TiO2 thin film in chemical mechanical polishing
Duan Bo;Zhou Jianwei;Liu Yuling;Wang Chenwei;Zhang Yufeng;Institute of Microelectronics;Hebei University of Technology;
Duan Bo;Zhou Jianwei;Liu Yuling;Wang Chenwei;Zhang Yufeng;Institute of Microelectronics;Hebei University of Technology;
..............page:194-198