1674-4926
2014 Issue 1
Multisubband electron mobility in a parabolic quantum well structure under the influence of an applied electric field
N.Sahoo;T.Sahu;Department of Electronic Science;Berhampur University;Department of Electronics and Communication Engineering;National Institute of Science and Technology;
N.Sahoo;T.Sahu;Department of Electronic Science;Berhampur University;Department of Electronics and Communication Engineering;National Institute of Science and Technology;
..............page:5-10
Optimal migration route of Cu in HfO2
Lu Jinlong;Luo Jing;Zhao Hongpeng;Yang Jin;Jiang Xianwei;Liu Qi;Li Xiaofeng;Dai Yuehua;Institute of Electronic and Information Engineering;Anhui University;Laboratory of Nano-Fabrication and Novel Device Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Internet Network Information Center;Hefei Institutes of Physical Science;Chinese Academy of Sciences;
Lu Jinlong;Luo Jing;Zhao Hongpeng;Yang Jin;Jiang Xianwei;Liu Qi;Li Xiaofeng;Dai Yuehua;Institute of Electronic and Information Engineering;Anhui University;Laboratory of Nano-Fabrication and Novel Device Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Internet Network Information Center;Hefei Institutes of Physical Science;Chinese Academy of Sciences;
..............page:11-15
Analysis of the electronic structures of 3d transition metals doped CuGaS2 based on DFT calculations
Zhao Zongyan;Zhou Dacheng;Yi Juan;Faculty of Materials Science and Engineering;Key Laboratory of Advanced Materials of Yunnan Province;Kunming University of Science and Technology;
Zhao Zongyan;Zhou Dacheng;Yi Juan;Faculty of Materials Science and Engineering;Key Laboratory of Advanced Materials of Yunnan Province;Kunming University of Science and Technology;
..............page:16-25
A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation
Purnima Hazra;S.Jit;Department of Electronics Engineering;Indian Institute of Technology;
Purnima Hazra;S.Jit;Department of Electronics Engineering;Indian Institute of Technology;
..............page:26-30
P-type double gate junctionless tunnel field effect transistor
M.W.Akram;Bahniman Ghosh;Punyasloka Bal;Partha Mondal;Department of Electrical Engineering;Indian Institute of Technology Kanpur;Microelectronics Research Center;
M.W.Akram;Bahniman Ghosh;Punyasloka Bal;Partha Mondal;Department of Electrical Engineering;Indian Institute of Technology Kanpur;Microelectronics Research Center;
..............page:31-37
Effect of active layer deposition temperature on the performance of sputtered amorphous In–Ga–Zn–O thin film transistors
Wu Jie;Shi Junfei;Dong Chengyuan;Zou Zhongfei;Chen Yuting;Zhou Daxiang;Hu Zhe;Zhan Runze;Center for Opto-Electronic Materials and Devices;National Engineering Lab of TFT-LCD Materials and Technologies;Shanghai Jiao Tong University;Infovision Optoelectronics Co.;Ltd;
Wu Jie;Shi Junfei;Dong Chengyuan;Zou Zhongfei;Chen Yuting;Zhou Daxiang;Hu Zhe;Zhan Runze;Center for Opto-Electronic Materials and Devices;National Engineering Lab of TFT-LCD Materials and Technologies;Shanghai Jiao Tong University;Infovision Optoelectronics Co.;Ltd;
..............page:38-43
A first-principle investigation of the oxygen defects in Si3N4-based charge trapping memories
Luo Jing;Lu Jinlong;Zhao Hongpeng;Dai Yuehua;Liu Qi;Yang Jin;Jiang Xianwei;Xu Huifang;School of Electronics and Information Engineering;Anhui University;Laboratory of Nano-Fabrication and Novel Device Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
Luo Jing;Lu Jinlong;Zhao Hongpeng;Dai Yuehua;Liu Qi;Yang Jin;Jiang Xianwei;Xu Huifang;School of Electronics and Information Engineering;Anhui University;Laboratory of Nano-Fabrication and Novel Device Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:44-49
A novel optimization design for 3.3 kV injection-enhanced gate transistor
Tian Xiaoli;Chu Weili;Lu Jiang;Lu Shuojin;Yu Qiaoqun;Zhu Yangjun;Institute of Microelectronics;Chinese Academy of Sciences;Jiangsu R&D Center for Internet of Things;
Tian Xiaoli;Chu Weili;Lu Jiang;Lu Shuojin;Yu Qiaoqun;Zhu Yangjun;Institute of Microelectronics;Chinese Academy of Sciences;Jiangsu R&D Center for Internet of Things;
..............page:50-54
Design of two-terminal PNPN diode for high-density and high-speed memory applications
Tong Xiaodong;Wu Hao;Liang Qingqing;Zhong Huicai;Zhu Huilong;Zhao Chao;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;
Tong Xiaodong;Wu Hao;Liang Qingqing;Zhong Huicai;Zhu Huilong;Zhao Chao;Ye Tianchun;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:55-59
Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress
Yang Zhen;Wang Jinyan;Xu Zhe;Li Xiaoping;Zhang Bo;Wang Maojun;Yu Min;Zhang Jincheng;Ma Xiaohua;Li Yongbing;Institute of Microelectronics;Peking University;School of Microelectronics;Xidian University;The 13th Research Institute of CETC;
Yang Zhen;Wang Jinyan;Xu Zhe;Li Xiaoping;Zhang Bo;Wang Maojun;Yu Min;Zhang Jincheng;Ma Xiaohua;Li Yongbing;Institute of Microelectronics;Peking University;School of Microelectronics;Xidian University;The 13th Research Institute of CETC;
..............page:60-64
Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs
Wang Chong;Chen Chong;He Yunlong;Zheng Xuefeng;Ma Xiaohua;Zhang Jincheng;Mao Wei;Hao Yue;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices;School of Microelectronics;
Wang Chong;Chen Chong;He Yunlong;Zheng Xuefeng;Ma Xiaohua;Zhang Jincheng;Mao Wei;Hao Yue;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices;School of Microelectronics;
..............page:65-68
A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-type buried layer
Wu Wei;Zhang Bo;Fang Jian;Luo Xiaorong;Li Zhaoji;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
Wu Wei;Zhang Bo;Fang Jian;Luo Xiaorong;Li Zhaoji;State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;
..............page:69-73
Research and optimization of the ESD response characteristic in a ps-LDMOS transistor
Wang Hao;Liu Siyang;Sun Weifeng;Huang Tingting;National ASIC System Engineering Research Center;Southeast University;
Wang Hao;Liu Siyang;Sun Weifeng;Huang Tingting;National ASIC System Engineering Research Center;Southeast University;
..............page:74-77
An InGaAs graded buffer layer in solar cells
Qu Xiaosheng;Bao Hongyin;Hanieh.S.Nikjalal;Xiong Liling;Zhen Hongxin;Institute of Electronic Information Engineering;Beihang University;
Qu Xiaosheng;Bao Hongyin;Hanieh.S.Nikjalal;Xiong Liling;Zhen Hongxin;Institute of Electronic Information Engineering;Beihang University;
..............page:78-81
A high gain wide dynamic range transimpedance amplifier for optical receivers
Liu Lianxi;Zou Jiao;En Yunfei;Liu Shubin;Niu Yue;Zhu Zhangming;Yang Yintang;School of Microelectronics;Xidian University;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component;
Liu Lianxi;Zou Jiao;En Yunfei;Liu Shubin;Niu Yue;Zhu Zhangming;Yang Yintang;School of Microelectronics;Xidian University;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component;
..............page:82-87
A new wideband LNA using a g_m-boosting technique
Chen Liang;Li Zhiqun;Cao Jia;Wu Chenjian;Zhang Meng;Institute of RF- & OE- ICs;Southeast University;RFIC and System Engineering Research Center of Ministry of Education of China;Southeast University;Jiangsu Provincial Key Laboratory of Sensor Network Technology;
Chen Liang;Li Zhiqun;Cao Jia;Wu Chenjian;Zhang Meng;Institute of RF- & OE- ICs;Southeast University;RFIC and System Engineering Research Center of Ministry of Education of China;Southeast University;Jiangsu Provincial Key Laboratory of Sensor Network Technology;
..............page:88-94
A 4 GHz CMOS multiplier for sigma–delta modulated signals
Guo Xiaodan;Meng Qiao;Liang Yong;Institute of RF- & OE-ICs;Southeast University;Engineering Research Center of RF-ICs & RF-Systems;Ministry of Education;
Guo Xiaodan;Meng Qiao;Liang Yong;Institute of RF- & OE-ICs;Southeast University;Engineering Research Center of RF-ICs & RF-Systems;Ministry of Education;
..............page:95-99
A low phase noise and low spur PLL frequency synthesizer for GNSS receivers
Li Sen;Jiang Jinguang;Zhou Xifeng;Liu Jianghua;School of Physics and Technology;Wuhan University;GNSS Research Center;Wuhan University;Suzhou Institute;Wuhan University;
Li Sen;Jiang Jinguang;Zhou Xifeng;Liu Jianghua;School of Physics and Technology;Wuhan University;GNSS Research Center;Wuhan University;Suzhou Institute;Wuhan University;
..............page:100-107
Design of ultralow power receiver front-ends for 2.4 GHz wireless sensor network applications
Zhang Meng;Li Zhiqun;Wang Zengqi;Wu Chenjian;Chen Liang;Institute of RF- & OE-ICs;Southeast University;Engineering Research Center of RF-ICs & RF-Systems;Ministry of Education;Southeast University;Jiangsu Provincial Key Laboratory of Sensor Network Technology;
Zhang Meng;Li Zhiqun;Wang Zengqi;Wu Chenjian;Chen Liang;Institute of RF- & OE-ICs;Southeast University;Engineering Research Center of RF-ICs & RF-Systems;Ministry of Education;Southeast University;Jiangsu Provincial Key Laboratory of Sensor Network Technology;
..............page:108-115
A millimeter wave linear superposition oscillator in 0.18 m CMOS technology
Yan Dong;Mao Luhong;Su Qiujie;Xie Sheng;Zhang Shilin;School of Electronic and Information Engineering;Tianjin University;
Yan Dong;Mao Luhong;Su Qiujie;Xie Sheng;Zhang Shilin;School of Electronic and Information Engineering;Tianjin University;
..............page:116-120
A 6–18 GHz broadband power amplifier MMIC with excellent efficiency
Chen Yifeng;Quan Jinhai;Liu Yungang;Hu Liulin;Research and Development Department;Ganide Technology Ltd;Co.;
Chen Yifeng;Quan Jinhai;Liu Yungang;Hu Liulin;Research and Development Department;Ganide Technology Ltd;Co.;
..............page:121-124
Impedance matching for the reduction of signal reflection in high speed multilevel three-dimensional integrated chips
Liu Xiaoxian;Zhu Zhangming;Yang Yintang;Wang Fengjuan;Ding Ruixue;School of Microelectronics;Xidian University;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;
Liu Xiaoxian;Zhu Zhangming;Yang Yintang;Wang Fengjuan;Ding Ruixue;School of Microelectronics;Xidian University;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;
..............page:125-132
A low-leakage and NBTI-mitigated N-type domino logic
Liang Huaguo;Xu Hui;Huang Zhengfeng;Yi Maoxiang;School of Electronic Science and Applied Physics;Heifei University of Technology;School of Computer and Information;Heifei University of Technology;School of Computer Science and Engineering;Anhui University of Science and Technology;
Liang Huaguo;Xu Hui;Huang Zhengfeng;Yi Maoxiang;School of Electronic Science and Applied Physics;Heifei University of Technology;School of Computer and Information;Heifei University of Technology;School of Computer Science and Engineering;Anhui University of Science and Technology;
..............page:133-138
A 130 nm radiation hardened flip–flop with an annular gate and a C-element
Wang Lei;Jiang Jianhua;Xiang Yiming;Zhou Yumei;Institute of Microelectronics;Chinese Academy of Sciences;
Wang Lei;Jiang Jianhua;Xiang Yiming;Zhou Yumei;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:139-143
A programmable MDAC with power scalability
Liu Shubin;Zhu Zhangming;Yang Yintang;Liu Lianxi;School of Microelectronics;Xidian University;
Liu Shubin;Zhu Zhangming;Yang Yintang;Liu Lianxi;School of Microelectronics;Xidian University;
..............page:144-149
Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration
Li Yan;Liu Yuling;Niu Xinhuan;Bu Xiaofeng;Li Hongbo;Tang Jiying;Fan Shiyan;Institute of Microelectronics;Hebei University of Technology;Tianfang Limited Company of Detection Technology;
Li Yan;Liu Yuling;Niu Xinhuan;Bu Xiaofeng;Li Hongbo;Tang Jiying;Fan Shiyan;Institute of Microelectronics;Hebei University of Technology;Tianfang Limited Company of Detection Technology;
..............page:150-154