1674-4926
2013 Issue 8
The impact of polishing on germanium-on-insulator substrates
Lin Wang;Ruan Yujiao;Chen Songyan;Li Cheng Lai Hongkai;and Huang Wei Department of Physics;Semiconductor Photonics Research Center;Xiamen University;Xiamen 361005;China
Lin Wang;Ruan Yujiao;Chen Songyan;Li Cheng Lai Hongkai;and Huang Wei Department of Physics;Semiconductor Photonics Research Center;Xiamen University;Xiamen 361005;China
..............page:38-42
Spray pyrolysis of tin selenide thin-film semiconductors:the effect of selenium concentration on the properties of the thin films
M.R.Fadavieslam and M.M.Bagheri-Mohagheghi School of Physics;Damghan University;Damghan;Iran
M.R.Fadavieslam and M.M.Bagheri-Mohagheghi School of Physics;Damghan University;Damghan;Iran
..............page:1-7
The abnormal electrostatic discharge of a no-connect metal cover in a ceramic packaging device
Li Song;Zeng Chuanbin;Luo Jiajun;and Han Zhengsheng Institute of Microeletronics;Chinese Academy of Sciences;Beijing 100029;China
Li Song;Zeng Chuanbin;Luo Jiajun;and Han Zhengsheng Institute of Microeletronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:74-78
A 14-bit 250-MS/s current-steering CMOS digital-to-analog converter
Li Xueqing;Fan Hua;Wei Qi;Xu Zhen;Liu Jianan and Yang Huazhong Department of Electronic Engineering;Tsinghua National Laboratory for Information Science and Technology;Tsinghua University;Beijing 100084;China
Li Xueqing;Fan Hua;Wei Qi;Xu Zhen;Liu Jianan and Yang Huazhong Department of Electronic Engineering;Tsinghua National Laboratory for Information Science and Technology;Tsinghua University;Beijing 100084;China
..............page:155-161
A 30-dB 1-16-GHz low noise IF amplifier in 90-nm CMOS
Cao Jia;Li Zhiqun;Li Qin;Chen Liang Zhang Meng Wu Chenjian;Wang Chong;and Wang Zhigong Institute of RF & OE ICs;Southeast University;Nanjing 210096;China Engineering Research Center of RF-lCs & RF-Systems;Ministry of Education;Nanjing 210096;China
Cao Jia;Li Zhiqun;Li Qin;Chen Liang Zhang Meng Wu Chenjian;Wang Chong;and Wang Zhigong Institute of RF & OE ICs;Southeast University;Nanjing 210096;China Engineering Research Center of RF-lCs & RF-Systems;Ministry of Education;Nanjing 210096;China
..............page:133-143
High-Q micro-ring resonators and grating couplers for silicon-on-insulator integrated photonic circuits
Tong Xiaogang;Liu Jun;and Xue Chenyang Key Laboratory of Instrumentation Science and Dynamic Measurement;North University of China;Taiyuan 030051;China
Tong Xiaogang;Liu Jun;and Xue Chenyang Key Laboratory of Instrumentation Science and Dynamic Measurement;North University of China;Taiyuan 030051;China
..............page:106-109
Nano inhomogeneity effects on small Ag/n-Si Schottky diode parameters at high temperature
M.A.Yeganeh~;R.K.Mamedov~1;and A.J.Novinrooz~3 1 Islamic Azad University Bonab Branch;Faculty of Electronic Engineering;Iran 2 Faculty of Physics;Baku State University;Academic Zahid Khalilov Str.23;AZ 1148;Baku 3 Islamic Azad University Takestan Branch;Faculty of Physics;Iran
M.A.Yeganeh~;R.K.Mamedov~1;and A.J.Novinrooz~3 1 Islamic Azad University Bonab Branch;Faculty of Electronic Engineering;Iran 2 Faculty of Physics;Baku State University;Academic Zahid Khalilov Str.23;AZ 1148;Baku 3 Islamic Azad University Takestan Branch;Faculty of Physics;Iran
..............page:8-14
A 1-V 10-bit 80-MS/s 1.6-mW SAR ADC in 65-nm GP CMOS
Ma Jun;Guo Yawei;Wu Yue;Cheng Xu and Zeng Xiaoyang State-Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
Ma Jun;Guo Yawei;Wu Yue;Cheng Xu and Zeng Xiaoyang State-Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
..............page:162-171
A low power 2.4 GHz transceiver for ZigBee applications
Liu Weiyang;Chen Jingjing;Wang Haiyong and Wu Nanjian State Key Laboratory for Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Liu Weiyang;Chen Jingjing;Wang Haiyong and Wu Nanjian State Key Laboratory for Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:110-119
Stability analysis of a back-gate graphene transistor in air environment
Jia Kunpeng;Yang Jie;Su Yajuan;Nie Pengfei Zhong Jian;Liang Qingqing;and Zhu Huilong Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Jia Kunpeng;Yang Jie;Su Yajuan;Nie Pengfei Zhong Jian;Liang Qingqing;and Zhu Huilong Key Laboratory of Microelectronics Devices and Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:61-64
The influence of RF power on the electrical properties of sputtered amorphous InGa-Zn-O thin films and devices
Shi Junfei~1;Dong Chengyuan~1;Dai Wenjun~2;Wu Jie~1;Chen Yuting~1;and Zhan Runze~1 1 Center for Opto-Electronic Materials and Devices;National Engineering Laboratory for TFT-LCD Materials and Technologies;Shanghai Jiao Tong University;Shanghai 200240;China 2 Infovision Optoelectronics Co.;Ltd;Kunshan 215300;China
Shi Junfei~1;Dong Chengyuan~1;Dai Wenjun~2;Wu Jie~1;Chen Yuting~1;and Zhan Runze~1 1 Center for Opto-Electronic Materials and Devices;National Engineering Laboratory for TFT-LCD Materials and Technologies;Shanghai Jiao Tong University;Shanghai 200240;China 2 Infovision Optoelectronics Co.;Ltd;Kunshan 215300;China
..............page:56-60
A 1.2-V,84-dB∑△ADM in 0.18-μm digital CMOS technology
Yin Shujuan Li Xiangyu 1 College of Science;Beijing Information Science and Technology University;Beijing 100192;China 2 Institute of Microelectronics;Tsinghua University;Beijing 100083;China
Yin Shujuan Li Xiangyu 1 College of Science;Beijing Information Science and Technology University;Beijing 100192;China 2 Institute of Microelectronics;Tsinghua University;Beijing 100083;China
..............page:90-93
Preparation of n-type semiconductor SnO2 thin films
Achour Rahal~;Said Benramache~;and Boubaker Benhaoua~1 1 VTRS Laboratory;Institute of Technology;University of El-oued 39000;Algeria 2 Physics Laboratory;Institute of Technology;University of El-oued 39000;Algeria 3 Material Sciences Laboratory;Faculty of Science;University of Biskra 07000;Algeria
Achour Rahal~;Said Benramache~;and Boubaker Benhaoua~1 1 VTRS Laboratory;Institute of Technology;University of El-oued 39000;Algeria 2 Physics Laboratory;Institute of Technology;University of El-oued 39000;Algeria 3 Material Sciences Laboratory;Faculty of Science;University of Biskra 07000;Algeria
..............page:25-28
Modulation of the effective work function of TiN metal gate for PMOS application
Han Kai;Ma Xueli;Yang Hong;and Wang Wenwu Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Han Kai;Ma Xueli;Yang Hong;and Wang Wenwu Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:193-196
An ultra-broadband distributed passive gate-pumped mixer in 0.18μm CMOS
Yu Zhenxing Feng Jun Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
Yu Zhenxing Feng Jun Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
..............page:99-105
A novel oxidation-based wet etching method for AlGaN/GaN heterostructures
Cai Jinbao;Wang Jinyan;Liu Yang;Xu Zhe Wang Maojun;Yu Min;Xie Bing;and Wu Wengang Wide Bandgap Semiconductor Laboratory;Institute of Microelectronics;Peking University;Beijing 100871;China
Cai Jinbao;Wang Jinyan;Liu Yang;Xu Zhe Wang Maojun;Yu Min;Xie Bing;and Wu Wengang Wide Bandgap Semiconductor Laboratory;Institute of Microelectronics;Peking University;Beijing 100871;China
..............page:201-204
Retraction statement
Editorial Office Journal of Semiconductors
Editorial Office Journal of Semiconductors
..............page:210
A high SFDR 6-bit 20-MS/s SAR ADC based on time-domain comparator
Han Xue;Fan Hua;Wei Qi;and Yang Huazhong Division of Circuits and Systems;Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
Han Xue;Fan Hua;Wei Qi;and Yang Huazhong Division of Circuits and Systems;Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
..............page:120-126
A current-mode DC-DC buck converter with adaptive zero compensation
Yang Ling~;Dai Guoding~;Xu Chongwei and Liu Yuezhi~2 1 Institute of Electronic CAD;Xidian University;Xi’an 710071;China 2 Key Laboratory of High-Speed Circuit Design and EMC;Ministry of Education;Xidian University;Xi’an 710071;China
Yang Ling~;Dai Guoding~;Xu Chongwei and Liu Yuezhi~2 1 Institute of Electronic CAD;Xidian University;Xi’an 710071;China 2 Key Laboratory of High-Speed Circuit Design and EMC;Ministry of Education;Xidian University;Xi’an 710071;China
..............page:150-154
Enhanced performance of C60 N-type organic field-effect transistors using a pentacene passivation layer
Liang Xiaoyu~1;Cheng Xiaoman~;Du Boqun Bai Xiao~2;and Fan Jianfeng 1 Key Laboratory of Display Material and Photoelectric Devices and School of Materials Science and Engineering;Tianjin Key Laboratory of Photoelectric Materials and Devices;Tianjin University of Technology;Tianjin 300384;China 2 School of Science;Tianjin University of Technology;Tianjin 300384;China
Liang Xiaoyu~1;Cheng Xiaoman~;Du Boqun Bai Xiao~2;and Fan Jianfeng 1 Key Laboratory of Display Material and Photoelectric Devices and School of Materials Science and Engineering;Tianjin Key Laboratory of Photoelectric Materials and Devices;Tianjin University of Technology;Tianjin 300384;China 2 School of Science;Tianjin University of Technology;Tianjin 300384;China
..............page:52-55
The structural and magnetic properties of Fe/(Ga,Mn)As heterostructures
Deng Jiajun;Chen Pei~1;Wang Wenjie~1;Hu Bing~1;Che Jiantao Chen Lin~2;Wang Hailong~2;and Zhao Jianhua 1 Mathematics and Physics Department;North China Electric Power University;Beijing 102206;China 2 State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Deng Jiajun;Chen Pei~1;Wang Wenjie~1;Hu Bing~1;Che Jiantao Chen Lin~2;Wang Hailong~2;and Zhao Jianhua 1 Mathematics and Physics Department;North China Electric Power University;Beijing 102206;China 2 State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:29-32
Scaling trends in energy recovery logic:an analytical approach
Jitendra Kanungo and S.Dasgupta Microelectronics & VLSI Group;Department of Electronics & Computer Engineering;Indian Institute of Technology;Roorkee-247667;India
Jitendra Kanungo and S.Dasgupta Microelectronics & VLSI Group;Department of Electronics & Computer Engineering;Indian Institute of Technology;Roorkee-247667;India
..............page:79-83
A dual-band quadrature VCO with gain proportional to oscillation frequency
Zhu Wenrui;Yang Haigang;Gao Tongqiang and Zhang Hui 1 Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2 University of Chinese Academy of Sciences;Beijing 100049;China
Zhu Wenrui;Yang Haigang;Gao Tongqiang and Zhang Hui 1 Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2 University of Chinese Academy of Sciences;Beijing 100049;China
..............page:84-89
A 14-bit 100-MS/s CMOS pipelined ADC with 11.3 ENOB
Wang Ke;Fan Chaojie;Zhou Jianjun;and Pan Wenjie Centre for Analog/Radio Frequency Integrated Circuits;Shanghai Jiao Tong University;Shanghai 200240;China
Wang Ke;Fan Chaojie;Zhou Jianjun;and Pan Wenjie Centre for Analog/Radio Frequency Integrated Circuits;Shanghai Jiao Tong University;Shanghai 200240;China
..............page:172-176
Planarization mechanism of alkaline copper CMP slurry based on chemical mechanical kinetics
Wang Shengli~1;Yin Kangda~;Li Xiang~1;Yue Hongwei and Liu Yunling 1 Institute of Microelectronics;Hebei University of Technology;Tianjin 300130;China 2 No.46 Research Institute of China Electronics Technology Group Corporation;Tianjin 300220;China
Wang Shengli~1;Yin Kangda~;Li Xiang~1;Yue Hongwei and Liu Yunling 1 Institute of Microelectronics;Hebei University of Technology;Tianjin 300130;China 2 No.46 Research Institute of China Electronics Technology Group Corporation;Tianjin 300220;China
..............page:197-200
A baseband circuit for wake-up receivers with double-mode detection and enhanced sensitivity robustness
Zhu Wenrui~;Yang Haigang~1;Gao Tongqiang~1;Liu Fei Cheng Xiaoyan~;and Zhang Dandan 1 Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2 University of Chinese Academy of Sciences;Beijing 100049;China
Zhu Wenrui~;Yang Haigang~1;Gao Tongqiang~1;Liu Fei Cheng Xiaoyan~;and Zhang Dandan 1 Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2 University of Chinese Academy of Sciences;Beijing 100049;China
..............page:144-149
Electronic structure and optical properties of a new type of semiconductor material:graphene monoxide
Yang Gui~;Zhang Yufeng~1;and Yan Xunwang 1 College of Physics & Electrical Engineering;Anyang Normal University;Anyang 455000;China 2 School of Physics and Electronics;Henan University;Kaifeng 475004;China
Yang Gui~;Zhang Yufeng~1;and Yan Xunwang 1 College of Physics & Electrical Engineering;Anyang Normal University;Anyang 455000;China 2 School of Physics and Electronics;Henan University;Kaifeng 475004;China
..............page:33-37
An RF frontend circuit design of a Compass and GPS dual-mode dual-channel image rejection radio receiver
Zhang Gong;Chen Honglin;Liu Wei;Yang Hanbing Zhang Lijuan;Wang Xiangwei;Shi Lei;Hu Sijing Wang Mingzhao;and Fu Zhuojian Guangzhou Runxin Information Technology Co.Ltd;Guangzhou 510663;China
Zhang Gong;Chen Honglin;Liu Wei;Yang Hanbing Zhang Lijuan;Wang Xiangwei;Shi Lei;Hu Sijing Wang Mingzhao;and Fu Zhuojian Guangzhou Runxin Information Technology Co.Ltd;Guangzhou 510663;China
..............page:127-132
An ultra-low-power area-efficient non-volatile memory in a 0.18μm single-poly CMOS process for passive RFID tags
Jia Xiaoyun;Feng Peng;Zhang Shengguang Wu Nanjian;Zhao Baiqin;and Liu Su 1 State Key Laboratory for Super Lattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Institute of Microelectronics;School of Physical Science and Technology;Lanzhou University;Lanzhou 730000;China
Jia Xiaoyun;Feng Peng;Zhang Shengguang Wu Nanjian;Zhao Baiqin;and Liu Su 1 State Key Laboratory for Super Lattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Institute of Microelectronics;School of Physical Science and Technology;Lanzhou University;Lanzhou 730000;China
..............page:94-98
A VHF RFPGA with adaptive phase-correction technique
Cheng Xu;Guo Guiliang;Yan Yuepeng Liu Rongjiang;and Jiang Yu Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Cheng Xu;Guo Guiliang;Yan Yuepeng Liu Rongjiang;and Jiang Yu Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:183-187
A novel compact model for on-chip stacked transformers in RF-CMOS technology
Liu Jun;Wen Jincai;Zhao Qian;and Sun Lingling Key Laboratory for RF Circuits and Systems of Ministry of Education;Hangzhou Dianzi University;Hangzhou 310037;China
Liu Jun;Wen Jincai;Zhao Qian;and Sun Lingling Key Laboratory for RF Circuits and Systems of Ministry of Education;Hangzhou Dianzi University;Hangzhou 310037;China
..............page:70-73
ANFIS-based approach to studying subthreshold behavior including the traps effect for nanoscale thin-film DG MOSFETs
T.Bentrcia~1;F.Djeffal~;and E.Chebaaki~2 1 Department of Physics;University of Batna;Batna 05000;Algeria 2 LEA;Department of Electronics;University of Batna;Batna 05000;Algeria 3 LEPCM;Department of Physics;University of Batna;Batna 05000;Algeria
T.Bentrcia~1;F.Djeffal~;and E.Chebaaki~2 1 Department of Physics;University of Batna;Batna 05000;Algeria 2 LEA;Department of Electronics;University of Batna;Batna 05000;Algeria 3 LEPCM;Department of Physics;University of Batna;Batna 05000;Algeria
..............page:43-51
Averaged hole mobility model of biaxially strained Si
Song Jianjun;Zhu He~1;Yang Jinyong~2;Zhang Heming Xuan Rongxi~1;and Hu Huiyong 1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;Xi’an 710071;China 2 Beijing Research Institute of Precise Mechatronic Controls;Beijing 100076;China
Song Jianjun;Zhu He~1;Yang Jinyong~2;Zhang Heming Xuan Rongxi~1;and Hu Huiyong 1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;Xi’an 710071;China 2 Beijing Research Institute of Precise Mechatronic Controls;Beijing 100076;China
..............page:15-18
A vertically integrated capacitorless memory cell
Tong Xiaodong;Wu Hao;Zhao Lichuan;Wang Ming and Zhong Huicai Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Tong Xiaodong;Wu Hao;Zhao Lichuan;Wang Ming and Zhong Huicai Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:65-69
The effect of annealing temperature and the characteristics of p-n junction diodes based on sprayed polyaniline/ZnO thin films
R.Suresh;V.Ponnuswamy;J.Chandrasekaran;D.Manoharan;and R.Mariappan Department of Physics;Sri Ramakrishna Mission Vidyalaya College of Arts and Science;Coimbatore-641020;Tamil Nadu;India
R.Suresh;V.Ponnuswamy;J.Chandrasekaran;D.Manoharan;and R.Mariappan Department of Physics;Sri Ramakrishna Mission Vidyalaya College of Arts and Science;Coimbatore-641020;Tamil Nadu;India
..............page:19-24
A 10-bit column-parallel cyclic ADC for high-speed CMOS image sensors
Han Ye;Li Quanliang;Shi Cong;and Wu Nanjian State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Han Ye;Li Quanliang;Shi Cong;and Wu Nanjian State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:177-182
A new fabrication process for the SOI-based miniature electric field sensor
Liu Wei~;Yang Pengfei~;Peng Chunrong Fang Dongming;and Xia Shanhong 1 State Key Laboratory of Transducer Technology;Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2 University of Chinese Academy of Sciences;Beijing 100049;China
Liu Wei~;Yang Pengfei~;Peng Chunrong Fang Dongming;and Xia Shanhong 1 State Key Laboratory of Transducer Technology;Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2 University of Chinese Academy of Sciences;Beijing 100049;China
..............page:205-209
Reactive ion etching of Ti-diffused LiNbO3 slab waveguides
Wu Jianjie;Li Jinyang;Yao Yanqing;and Qi Zhimei State Key Laboratory of Transducer Technology;Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China
Wu Jianjie;Li Jinyang;Yao Yanqing;and Qi Zhimei State Key Laboratory of Transducer Technology;Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China
..............page:188-192