1674-4926
2013 Issue 5
Extraction of interface state density and resistivity of suspended p-type silicon nanobridges
Zhang Jiahong~;Liu Qingquan~1;Ge Yixian~1;Gu Fang Li Min~1;Mao Xiaoli~1;and Cao Hongxia~1 1 Jiangsu Key Laboratory of Meteorological Observation and Information Processing;Nanjing University of Information Science & Technology;Nanjing 210044;China 2 College of Physics & Opto-Electronic Engineering;Nanjing University of Information Science & Technology; Nanjing 210044;China
Zhang Jiahong~;Liu Qingquan~1;Ge Yixian~1;Gu Fang Li Min~1;Mao Xiaoli~1;and Cao Hongxia~1 1 Jiangsu Key Laboratory of Meteorological Observation and Information Processing;Nanjing University of Information Science & Technology;Nanjing 210044;China 2 College of Physics & Opto-Electronic Engineering;Nanjing University of Information Science & Technology; Nanjing 210044;China
..............page:7-12
Photoelectrocatrocatalytic hydrolysis of starch by using sprayed ZnO thin films
R.T.Sapkal;S.S.Shinde;K.Y.Rajpure;and C.H.Bhosale Electrochemical Materials Laboratory;Department of Physics;Shivaji University;Kolhapur-416004;India
R.T.Sapkal;S.S.Shinde;K.Y.Rajpure;and C.H.Bhosale Electrochemical Materials Laboratory;Department of Physics;Shivaji University;Kolhapur-416004;India
..............page:13-15
Structural and magnetic properties of Yb-implanted GaN
Yin Chunhai Liu Chao;Tao Dongyan and Zeng Yiping Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Yin Chunhai Liu Chao;Tao Dongyan and Zeng Yiping Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:16-19
Influence of substrate temperature on the structural and properties of In-doped CdO films prepared by PLD
Zheng Biju and Hu Wen Faculty of Materials Science and Engineering;Kunming University of Science and Technology;Kunming 650093;China
Zheng Biju and Hu Wen Faculty of Materials Science and Engineering;Kunming University of Science and Technology;Kunming 650093;China
..............page:20-25
The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD
Zhu Shaoxin;Yan Jianchang;Zeng Jianping;Zhang Ning Si Zhao;Dong Peng;Li Jinmin;and Wang Junxi Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Zhu Shaoxin;Yan Jianchang;Zeng Jianping;Zhang Ning Si Zhao;Dong Peng;Li Jinmin;and Wang Junxi Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:26-28
ZnO nanoparticles as a luminescent down-shifting layer for photosensitive devices
Zhu Yao~;A.Apostoluk~;Liu Shibin~1;S.Daniele~3;and B.Masenelli~2 1 School of Electronics and Information;Northwestern Polytechnical University;Xi’an 710129;China 2 Universite de Lyon;F-69000 Lyon;France and INL;CNRS;UMR 5270;INSA Lyon;F-69621 Villeurbanne;France 3 Universite de Lyon;F-69000 Lyon;France and IRCE Lyon;CNRS;UMR 5256;F-69626 Villeurbanne;France
Zhu Yao~;A.Apostoluk~;Liu Shibin~1;S.Daniele~3;and B.Masenelli~2 1 School of Electronics and Information;Northwestern Polytechnical University;Xi’an 710129;China 2 Universite de Lyon;F-69000 Lyon;France and INL;CNRS;UMR 5270;INSA Lyon;F-69621 Villeurbanne;France 3 Universite de Lyon;F-69000 Lyon;France and IRCE Lyon;CNRS;UMR 5256;F-69626 Villeurbanne;France
..............page:29-34
Preparation of GaN-on-Si based thin-film flip-chip LEDs
Zhang Shaohua~;Feng Bo~;Sun Qian~2;and Zhao Hanmin 1 School of Materials Science and Technology;Nanchang University;Nanchang 330031;China 2 Lattice Power Corporation;Nanchang 330029;China
Zhang Shaohua~;Feng Bo~;Sun Qian~2;and Zhao Hanmin 1 School of Materials Science and Technology;Nanchang University;Nanchang 330031;China 2 Lattice Power Corporation;Nanchang 330029;China
..............page:35-37
On-current modeling of short-channel double-gate(DG) MOSFETs with a vertical Gaussian-like doping profile
Sarvesh Dubey~1;Pramod Kumar Tiwari~2;and S.Jit~ 1 Department of Electronics Engineering;Indian Institute of Technology;Varanasi-221005;India 2 Department of Electronics and Communication Engineering;National Institute of Technology Rourkela-769008;India
Sarvesh Dubey~1;Pramod Kumar Tiwari~2;and S.Jit~ 1 Department of Electronics Engineering;Indian Institute of Technology;Varanasi-221005;India 2 Department of Electronics and Communication Engineering;National Institute of Technology Rourkela-769008;India
..............page:46-53
Multi-LED package design,fabrication and thermal analysis
R.H.Poelma~;S.Tarashioon~1;H.W.van Zeijl~1;S.Goldbach~2; J.L.J.Zijl~3;and G.Q.Zhang~ 1 Delft University of Technology;Delft;The Netherlands 2 Philips Lighting;Eindhoven;The Netherlands 3 Fico/Besi;Duiven;The Netherlands
R.H.Poelma~;S.Tarashioon~1;H.W.van Zeijl~1;S.Goldbach~2; J.L.J.Zijl~3;and G.Q.Zhang~ 1 Delft University of Technology;Delft;The Netherlands 2 Philips Lighting;Eindhoven;The Netherlands 3 Fico/Besi;Duiven;The Netherlands
..............page:54-58
Thermal analysis of remote phosphor in LED modules
Dong Mingzhi~;Wei Jia~2;Ye Huaiyu~2;Yuan Cadmus~; and Zhang Kouchi 1 Beijing Research Centre;Delft University of Technology;Beijing 100083;China 2 DIMES;Delft University of Technology;Feldmannweg 17;2628 CT;Delft;the Netherlands 3 State Key Laboratory of Solid State Lighting;Beijing 100083;China 4 Research and Development Center for Semiconductor Lighting;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Dong Mingzhi~;Wei Jia~2;Ye Huaiyu~2;Yuan Cadmus~; and Zhang Kouchi 1 Beijing Research Centre;Delft University of Technology;Beijing 100083;China 2 DIMES;Delft University of Technology;Feldmannweg 17;2628 CT;Delft;the Netherlands 3 State Key Laboratory of Solid State Lighting;Beijing 100083;China 4 Research and Development Center for Semiconductor Lighting;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:38-40
Kirk effect and suppression for 20 V planar active-gap LDMOS
Nie Weidong~;Yi Fayou~2;and Yu Zongguang 1 School of Information;Jiangnan University;Wuxi 214122;China 2 Wuxi Crystal Source Electronics Co.;Ltd.;Wuxi 214028;China
Nie Weidong~;Yi Fayou~2;and Yu Zongguang 1 School of Information;Jiangnan University;Wuxi 214122;China 2 Wuxi Crystal Source Electronics Co.;Ltd.;Wuxi 214028;China
..............page:59-63
The effects of current density ratio and reflectivity on the gain,saturation and noise characteristics of a two-section MQW RSOA
Xi Huali;Huang Lirong;and Jiang Guiying Wuhan National Laboratory for Optoelectronics;Huazhong University of Science & Technology;Wuhan 430074;China
Xi Huali;Huang Lirong;and Jiang Guiying Wuhan National Laboratory for Optoelectronics;Huazhong University of Science & Technology;Wuhan 430074;China
..............page:64-67
Optimization of the emitter region and the metal grid of a concentrator silicon solar cell
Xing Yupeng;Han Peide;Fan Yujie;Wang Shuai Liang Peng Ye Zhou;Hu Shaoxu Li Xinyi Lou Shishu;Zhao Chunhua;and Mi Yanhong State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Xing Yupeng;Han Peide;Fan Yujie;Wang Shuai Liang Peng Ye Zhou;Hu Shaoxu Li Xinyi Lou Shishu;Zhao Chunhua;and Mi Yanhong State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:68-75
A THz InGaAs/InP double heterojunction bipolar transistor with fmax=325 GHz and BVCBO=10.6 V
Cheng Wei~+;Wang Yuan;Zhao Yan;Lu Haiyan Gao Hanchao;and Yang Naibin Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute; Nanjing 210016;China
Cheng Wei~+;Wang Yuan;Zhao Yan;Lu Haiyan Gao Hanchao;and Yang Naibin Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute; Nanjing 210016;China
..............page:76-78
Field plate engineering for GaN-based Schottky barrier diodes
Lei Yong~;Shi Hongbiao~1;Lu Hai~;Chen Dunjun Zhang Rong~1;and Zheng Youdou~1 1 Nanjing National Laboratory of Microstructures;Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials;and School of Electronic Science and Engineering;Nanjing University;Nanjing 210093;China 2 School of Physics and Optoelectronic Engineering;Nanjing University of Information Science and Technology; Nanjing 210044;China
Lei Yong~;Shi Hongbiao~1;Lu Hai~;Chen Dunjun Zhang Rong~1;and Zheng Youdou~1 1 Nanjing National Laboratory of Microstructures;Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials;and School of Electronic Science and Engineering;Nanjing University;Nanjing 210093;China 2 School of Physics and Optoelectronic Engineering;Nanjing University of Information Science and Technology; Nanjing 210044;China
..............page:79-86
Optical simulation of phosphor layer of white LEDs
Liao Junyuan~+;Rao Haibo;Wang Wei Wan Xianlong Zhou Linsong;Zhou Da Wang Xuemei;and Lei Qiaolin University of Electronic Science and Technology of China;Chengdu 610051;China
Liao Junyuan~+;Rao Haibo;Wang Wei Wan Xianlong Zhou Linsong;Zhou Da Wang Xuemei;and Lei Qiaolin University of Electronic Science and Technology of China;Chengdu 610051;China
..............page:41-45
Improvement of carrier distribution in dual wavelength light-emitting diodes
Si Zhao~+;Wei Tongbo;Zhang Ning;Ma Jun;Wang Junxi and Li Jinmin Research and Development Center for Semiconductor Lighting;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Si Zhao~+;Wei Tongbo;Zhang Ning;Ma Jun;Wang Junxi and Li Jinmin Research and Development Center for Semiconductor Lighting;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:87-89
Analysis of incomplete charge transfer effects in a CMOS image sensor
Han Liqiang;Yao Suying;Xu Jiangtao;Xu Chao and Gao Zhiyuan School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
Han Liqiang;Yao Suying;Xu Jiangtao;Xu Chao and Gao Zhiyuan School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
..............page:90-95
Self-adaptive phosphor coating technology for wafer-level scale chip packaging
Zhou Linsong~+;Rao Haibo;Wang Wei;Wan Xianlong Liao Junyuan;Wang Xuemei;Zhou Da;and Lei Qiaolin School of Opto-Electronic Information;University of Electronic Science and Technology of China;Chengdu 610054;China
Zhou Linsong~+;Rao Haibo;Wang Wei;Wan Xianlong Liao Junyuan;Wang Xuemei;Zhou Da;and Lei Qiaolin School of Opto-Electronic Information;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:96-99
Magnetic field and temperature dependence of the properties of the ground state of the strong-coupling bound magnetopolaron in quantum rods with hydrogenic impurity
Xin Wei;Zhao Yuwei;Han Chao;and Eerdunchaolu Institute of Condensed Matter Physics;Hebei Normal University of Science & Technology;Qinhuangdao 066004;China
Xin Wei;Zhao Yuwei;Han Chao;and Eerdunchaolu Institute of Condensed Matter Physics;Hebei Normal University of Science & Technology;Qinhuangdao 066004;China
..............page:1-6
A novel COB structure with integrated multifunction
Xie Zhiguo~;Li Cheng~1;Yu Binhai~1;and Wang Yaohao 1 Postdoctor of Optical Engineering;Sun Yat-sen University;Guangzhou 510275;China 2 Foshan Nationstar Optoelectronics Co.Ltd.;Foshan 528000;China
Xie Zhiguo~;Li Cheng~1;Yu Binhai~1;and Wang Yaohao 1 Postdoctor of Optical Engineering;Sun Yat-sen University;Guangzhou 510275;China 2 Foshan Nationstar Optoelectronics Co.Ltd.;Foshan 528000;China
..............page:100-103
A low-power portable ECG sensor interface with dry electrodes
Pu Xiaofei~+;Wan Lei;Zhang Hui;Qin Yajie and Hong Zhiliang State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
Pu Xiaofei~+;Wan Lei;Zhang Hui;Qin Yajie and Hong Zhiliang State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
..............page:104-109
Design of basic digital circuit blocks based on an OFET device charge model
Shen Shu School of Computer Science & Technology;Nanjing University of Posts and Telecommunication;Nanjing 210003;China
Shen Shu School of Computer Science & Technology;Nanjing University of Posts and Telecommunication;Nanjing 210003;China
..............page:110-114
A 0.5 V divider-by-2 design with optimization methods for wireless sensor networks
Wang Lidan~3 and Li Zhiqun 1 Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China 2 Engineering Research Center of RF-ICs & RF-Systems;Ministry of Education;Southeast University;Nanjing 210096;China 3 Jiangsu Provincial Key Laboratory of Sensor Network Technology;Wuxi 214135;China
Wang Lidan~3 and Li Zhiqun 1 Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China 2 Engineering Research Center of RF-ICs & RF-Systems;Ministry of Education;Southeast University;Nanjing 210096;China 3 Jiangsu Provincial Key Laboratory of Sensor Network Technology;Wuxi 214135;China
..............page:115-120
A new AC driving circuit for a top emission AMOLED
Zhang Yongwen~1;Chen Wenbin~;and Liu Haohan 1 School of Optoelectronic Information;University of Electronic Science and Technology of China;Chengdu 610054;China 2 School of Microelectronics and Solid-State Electronics;University of Electronic Science and Technology of China; Chengdu 610054;China
Zhang Yongwen~1;Chen Wenbin~;and Liu Haohan 1 School of Optoelectronic Information;University of Electronic Science and Technology of China;Chengdu 610054;China 2 School of Microelectronics and Solid-State Electronics;University of Electronic Science and Technology of China; Chengdu 610054;China
..............page:121-125
Reactive ion etching of Si2Sb2Te5 in CF4/Ar plasma for a nonvolatile phase-change memory device
Li Juntao~;Liu Bo~;Song Zhitang~1;Yao Dongning~1; Feng Gaoming~3;He Aodong~;Peng Cheng~; and Feng Songlin~1 1 State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences;Shanghai 200050;China 2 University of Chinese Academy of Sciences;Beijing 100049;China 3 United Laboratory;Semiconductor Manufacturing International Corporation;Shanghai 201203;China
Li Juntao~;Liu Bo~;Song Zhitang~1;Yao Dongning~1; Feng Gaoming~3;He Aodong~;Peng Cheng~; and Feng Songlin~1 1 State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences;Shanghai 200050;China 2 University of Chinese Academy of Sciences;Beijing 100049;China 3 United Laboratory;Semiconductor Manufacturing International Corporation;Shanghai 201203;China
..............page:126-130