1674-4926
2013 Issue 4
A compact charge-based model to study the nanoscale undoped double gate MOSFETs for nanoelectronic circuit design using genetic algorithms
T.Bendib;F.Djeffal~+;and D.Arar LEA;Department of Electronics;University of Batna;05000;Algeria
T.Bendib;F.Djeffal~+;and D.Arar LEA;Department of Electronics;University of Batna;05000;Algeria
..............page:30-36
Motion of current filaments in avalanching PIN diodes
Ren Xingrong;Chai Changchun;Ma Zhenyang Yang Yintang Qiao Liping;Shi Chunlei Ren Lihua Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics; Xidian University;Xi’an 710071;China
Ren Xingrong;Chai Changchun;Ma Zhenyang Yang Yintang Qiao Liping;Shi Chunlei Ren Lihua Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics; Xidian University;Xi’an 710071;China
..............page:37-41
Influence of gate-source/drain misalignment on the performance of bulk FinFETs by a 3D full band Monte Carlo simulation
Wang Juncheng Du Gang;Wei Kangliang Zeng Lang Zhang Xing;and Liu Xiaoyan Institute of Microelectronics;Peking University;Beijing 100871;China
Wang Juncheng Du Gang;Wei Kangliang Zeng Lang Zhang Xing;and Liu Xiaoyan Institute of Microelectronics;Peking University;Beijing 100871;China
..............page:42-45
An extrinsic fmax＞100 GHz InAlN/GaN HEMT with AlGaN back barrier
Liu Bo;Feng Zhihong Dun Shaobo Zhang Xiongwen Gu Guodong;Wang Yuangang Xu Peng;He Zezhao and Cai Shujun Science and Technology on ASIC Laboratory;Hebei Semiconductor Research Institute;Shijiazhuang 050051;China
Liu Bo;Feng Zhihong Dun Shaobo Zhang Xiongwen Gu Guodong;Wang Yuangang Xu Peng;He Zezhao and Cai Shujun Science and Technology on ASIC Laboratory;Hebei Semiconductor Research Institute;Shijiazhuang 050051;China
..............page:46-49
A 1.55-μm laser array monolithically integrated with an MMI combiner
Ma Li Zhu Hongliang Liang Song;Wang Baojun Zhang Can~1;Zhao Lingjuan;Bian Jing;and Chen Minghua 1 Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China 2 Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
Ma Li Zhu Hongliang Liang Song;Wang Baojun Zhang Can~1;Zhao Lingjuan;Bian Jing;and Chen Minghua 1 Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China 2 Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
..............page:50-53
A high performance carrier stored trench bipolar transistor with a field-modified P-base region
Qi Yue;Wang Zhigang;Chen Wanjun and Zhang Bo 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China 2 Institute of Electric and Information Engineering in Dongguan;University of Electronic Science and Technology of China; Dongguan 523808;China
Qi Yue;Wang Zhigang;Chen Wanjun and Zhang Bo 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China 2 Institute of Electric and Information Engineering in Dongguan;University of Electronic Science and Technology of China; Dongguan 523808;China
..............page:54-59
The resonance frequency shift in an SOI nano-waveguide microring resonator
Zang Junbin;Xue Chenyang;Wei Liping;Liu Chao Cui Danfeng;Wang Yonghua;Zhang Wendong 1 Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education; Taiyuan 030051;China 2 Science and Technology on Electronic Test & Measurement Laboratory;Taiyuan 030051;China
Zang Junbin;Xue Chenyang;Wei Liping;Liu Chao Cui Danfeng;Wang Yonghua;Zhang Wendong 1 Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education; Taiyuan 030051;China 2 Science and Technology on Electronic Test & Measurement Laboratory;Taiyuan 030051;China
..............page:60-63
Analysis of the dV/dt effect on an IGBT gate circuit in IPM
Hua Qing;Li Zehong Zhang Bo;Huang Xiangjun and Cheng Dekai 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China 2 Midea Air-Conditioning & Refrigeration Research Institute;Foshan 528311;China
Hua Qing;Li Zehong Zhang Bo;Huang Xiangjun and Cheng Dekai 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China 2 Midea Air-Conditioning & Refrigeration Research Institute;Foshan 528311;China
..............page:64-68
A-3 dBm RF transmitter front-end for 802.11g application
Zhao Jinxin Yan Jun and Shi Yin Suzhou-CAS Semiconductor Integration R&D Center;Suzhou 215000;China
Zhao Jinxin Yan Jun and Shi Yin Suzhou-CAS Semiconductor Integration R&D Center;Suzhou 215000;China
..............page:69-75
A 23 GHz low power VCO in SiGe BiCMOS technology
Huang Yinkun;Wu Danyu Zhou Lei;Jiang Fan Wu Jin;and Jin Zhi 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Huang Yinkun;Wu Danyu Zhou Lei;Jiang Fan Wu Jin;and Jin Zhi 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:76-79
New de-embedding structures for extracting the electrical parameters of a through-silicon-via pair
Zhou Jing;Wan Lixi;Li Jun Wang Huijuan Dai Fengwei;Daniel Guidotti;Cao Liqiang Yu Daquan Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Zhou Jing;Wan Lixi;Li Jun Wang Huijuan Dai Fengwei;Daniel Guidotti;Cao Liqiang Yu Daquan Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:80-86
A dual-path,current-sensing resistor-free boost LED driver with fast PWM dimming
Zhou Minchao;L Danzhu;Cheng Lin Bill Yang Liu~2; and Hong Zhiliang 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Analog Devices;Shanghai 200021;China
Zhou Minchao;L Danzhu;Cheng Lin Bill Yang Liu~2; and Hong Zhiliang 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Analog Devices;Shanghai 200021;China
..............page:87-93
Feed-through cancellation of a MEMS filter using the difference method and analysis of the induced notch
Han Guowei~;Si Chaowei;Ning Jin Zhong Weiwei Sun Guosheng~2;Zhao Yongmei Yang Fuhua 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 State Key Laboratory of Transducer Technology;Beijing 100190;China
Han Guowei~;Si Chaowei;Ning Jin Zhong Weiwei Sun Guosheng~2;Zhao Yongmei Yang Fuhua 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 State Key Laboratory of Transducer Technology;Beijing 100190;China
..............page:94-99
A 1.8 V 1.1 MS/s 96.1 dB-SFDR successive approximation register analog-to-digital converter with calibration
Chi Yingying Li Dongmei 1 Institution of Microelectronics of Tsinghua University;Beijing 100084;China 2 Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
Chi Yingying Li Dongmei 1 Institution of Microelectronics of Tsinghua University;Beijing 100084;China 2 Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
..............page:100-106
SRAM standby leakage decoupling analysis for different leakage reduction techniques
Dong Qing and Lin Yinyin State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
Dong Qing and Lin Yinyin State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
..............page:107-111
C-band 6-bit phase shifter for a phase array antenna
Yang Xiaofeng and Shi Jiangyi Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education;School of Microelectronic; Xidian University;Xi’an 710071;China
Yang Xiaofeng and Shi Jiangyi Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education;School of Microelectronic; Xidian University;Xi’an 710071;China
..............page:112-115
A low leakage power-rail ESD detection circuit with a modified RC network for a 90-nm CMOS process
Yang Zhaonian~+;Liu Hongxia;and Wang Shulong Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education;School of Microelectronics; Xidian University;Xi’an 710071;China
Yang Zhaonian~+;Liu Hongxia;and Wang Shulong Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education;School of Microelectronics; Xidian University;Xi’an 710071;China
..............page:116-120
A low noise multi-channel readout IC for X-ray cargo inspection
Wang Xu;Yang Hongyan Yuan Ying and Wu Wuchen VLSI and System Laboratory;College of Electronic Information and Control Engineering;Beijing University of Technology; Beijing 100022;China
Wang Xu;Yang Hongyan Yuan Ying and Wu Wuchen VLSI and System Laboratory;College of Electronic Information and Control Engineering;Beijing University of Technology; Beijing 100022;China
..............page:121-126
One-phonon resonant electron Raman scattering in multilayer coaxial cylindrical AlxGa1-xAs/GaAs quantum cables
Zhong Qinghu;Yi Xuehua;Pu Shouliang Yan Yuzhen School of Physics and Optical Information Sciences;Jiaying University;Meizhou 514015;China
Zhong Qinghu;Yi Xuehua;Pu Shouliang Yan Yuzhen School of Physics and Optical Information Sciences;Jiaying University;Meizhou 514015;China
..............page:1-6
Elaboration and characterization of a KCl single crystal doped with nanocrystals of a Sb2O3 semiconductor
L.Bouhdjer~;S.Addala~1;A.Chala~2;O.Halimi~1;B.Boudine~1;and M.Sebais~1 1 Laboratory of Crystallography;Department of Physics;Mentouri-University of Constantine;Constantine 25000;Algeria 2 Laboratory Applied Chemistry;Department of Chemical;Mohamed Khaider-University of Biskra;Biskra 07000;Algeria
L.Bouhdjer~;S.Addala~1;A.Chala~2;O.Halimi~1;B.Boudine~1;and M.Sebais~1 1 Laboratory of Crystallography;Department of Physics;Mentouri-University of Constantine;Constantine 25000;Algeria 2 Laboratory Applied Chemistry;Department of Chemical;Mohamed Khaider-University of Biskra;Biskra 07000;Algeria
..............page:7-10
Solar light assisted photocatalysis of water using a zinc oxide semiconductor
S.S.Shinde;C.H.Bhosale;and K.Y.Rajpure~+ Electrochemical Materials Laboratory;Department of Physics;Shivaji University;Kolhapur 416004;Maharashtra;India
S.S.Shinde;C.H.Bhosale;and K.Y.Rajpure~+ Electrochemical Materials Laboratory;Department of Physics;Shivaji University;Kolhapur 416004;Maharashtra;India
..............page:11-14
Defects in CdMnTe crystals for nuclear detector applications
Du Yuanyuan;Jie Wanq;Xu Yadong Zheng Xin Wang Tao Yu Hui State Key Laboratory of Solidification Processing;School of Materials Science and Engineering;Northwestern Polytechnical University;Xi’an 710072;China
Du Yuanyuan;Jie Wanq;Xu Yadong Zheng Xin Wang Tao Yu Hui State Key Laboratory of Solidification Processing;School of Materials Science and Engineering;Northwestern Polytechnical University;Xi’an 710072;China
..............page:15-19
Fabrication and characterization of a GaN/(4H)SiC vertical pn power diode using direct and interfaced epitaxial-growth approaches
Bose Srikanta~+ and Mazumder S K Laboratory for Energy and Switching-Electronics Systems;Department of Electrical and Computer Engineering; University of Illinois at Chicago;Chicago;IL:60607;USA
Bose Srikanta~+ and Mazumder S K Laboratory for Energy and Switching-Electronics Systems;Department of Electrical and Computer Engineering; University of Illinois at Chicago;Chicago;IL:60607;USA
..............page:20-23
A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices
Godwin Raj~1;Hemant Pardeshi~;Sudhansu Kumar Pati~1;N Mohankumar~2; and Chandan Kumar Sarkar~1 1 Nano Device Simulation Laboratory;Electronics and Telecommunication Engineering Department;Jadavpur University; Kolkata-700 032;India 2 SKP Engineering College;Tiruvannamalai;Tamilnadu-606 611;India
Godwin Raj~1;Hemant Pardeshi~;Sudhansu Kumar Pati~1;N Mohankumar~2; and Chandan Kumar Sarkar~1 1 Nano Device Simulation Laboratory;Electronics and Telecommunication Engineering Department;Jadavpur University; Kolkata-700 032;India 2 SKP Engineering College;Tiruvannamalai;Tamilnadu-606 611;India
..............page:24-29