0253-4177
2013 Issue 3
Effects of interaction between defects on the uniformity of doping HfO2-based RRAM:a first principle study
Zhao Qiang;Zhou Maoxiu;Zhang Wei~1;Liu Qi Li Xiaofeng;Liu Ming~2;and Dai Yuehua~+ 1 School of Electronic and Information Engineering;Anhui University;Hefei 230601;China 2 Laboratory of Nano-Fabrication and Novel Device Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 3 Internet Network Information Center;Institutes of Physical Science;Chinese Academy of Sciences;Hefei 230031;China
Zhao Qiang;Zhou Maoxiu;Zhang Wei~1;Liu Qi Li Xiaofeng;Liu Ming~2;and Dai Yuehua~+ 1 School of Electronic and Information Engineering;Anhui University;Hefei 230601;China 2 Laboratory of Nano-Fabrication and Novel Device Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 3 Internet Network Information Center;Institutes of Physical Science;Chinese Academy of Sciences;Hefei 230031;China
..............page:1-6
The design and test of MEMS piezoresistive ultrasonic sensor arrays
Lian Deqin~;He Changde~;Zhang Hui;Yu Jiaqi Yuan Kejing;and Xue Chenyang 1 Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;North University of China; Taiyuan 030051;China 2 Key Laboratory of Science and Technology on Electronic Test & Measurement;North University of China;Taiyuan 030051; China
Lian Deqin~;He Changde~;Zhang Hui;Yu Jiaqi Yuan Kejing;and Xue Chenyang 1 Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;North University of China; Taiyuan 030051;China 2 Key Laboratory of Science and Technology on Electronic Test & Measurement;North University of China;Taiyuan 030051; China
..............page:51-57
Simulation study on short channel double-gate junctionless field-effect transistors
Wu Meile~1;Jin Xiaoshi;Chuai Rongyan~1;Liu Xi and Jong-Ho Lee~2 1 School of Information Science and Engineering;Shenyang University of Technology;Shenyang 110870;China 2 School of EECS Eng and ISRC;Seoul National University;Shinlim-Dong; Kwanak-Gu;Seoul 151-742;Korea
Wu Meile~1;Jin Xiaoshi;Chuai Rongyan~1;Liu Xi and Jong-Ho Lee~2 1 School of Information Science and Engineering;Shenyang University of Technology;Shenyang 110870;China 2 School of EECS Eng and ISRC;Seoul National University;Shinlim-Dong; Kwanak-Gu;Seoul 151-742;Korea
..............page:35-42
A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors
Wang Shuai Li Ke;Jiang Yibo;Cong Mifang Du Huan;and Han Zhengsheng Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Wang Shuai Li Ke;Jiang Yibo;Cong Mifang Du Huan;and Han Zhengsheng Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:43-47
A lower power reconfigurable multi-band transceiver for short-range communication
Zhang Lingwei~;Chi Baoyong Qi Nan~1;Liu Liyuan Jiang Hanjun~1;and Wang Zhihua 1 Institute of Microelectronics;Tsinghua University;Beijing 100084;China 2 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Zhang Lingwei~;Chi Baoyong Qi Nan~1;Liu Liyuan Jiang Hanjun~1;and Wang Zhihua 1 Institute of Microelectronics;Tsinghua University;Beijing 100084;China 2 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:105-111
A digitally calibrated CMOS RMS power detector for RF automatic gain control
Yan Taotaoi;Wang Hui;Li Jinbo;and Zhou Jianjun School of Microelectronics;Shanghai Jiao Tong University;Shanghai 200240;China
Yan Taotaoi;Wang Hui;Li Jinbo;and Zhou Jianjun School of Microelectronics;Shanghai Jiao Tong University;Shanghai 200240;China
..............page:63-69
High linearity current communicating passive mixer employing a simple resistor bias
Liu Rongjiang;Guo Guiliang;and Yan Yuepeng Department of Electronics System Technology;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
Liu Rongjiang;Guo Guiliang;and Yan Yuepeng Department of Electronics System Technology;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
..............page:86-89
A 27-mW 10-bit 125-MSPS charge domain pipelined ADC with a PVT insensitive boosted charge transfer circuit
Chen Zhenhai~;Huang Songren~2;Zhang Hong Yu Zongguang~2;and Ji Huicai 1 Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory;School of Microelectronics;Xidian University; Xi’an 710071;China 2 China Electronic Technology Group Corporation;No.58 Research Institute;Wuxi 214035;China 3 School of Electronics and Information Engineering;Xi’an Jiaotong University;Xi’an 710049;China
Chen Zhenhai~;Huang Songren~2;Zhang Hong Yu Zongguang~2;and Ji Huicai 1 Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory;School of Microelectronics;Xidian University; Xi’an 710071;China 2 China Electronic Technology Group Corporation;No.58 Research Institute;Wuxi 214035;China 3 School of Electronics and Information Engineering;Xi’an Jiaotong University;Xi’an 710049;China
..............page:112-120
An 8-bit 100-MS/s digital-to-skew converter embedded switch with a 200-ps range for time-interleaved sampling
Zhu Xiaoshi;Chen Chixiao;Xu Jialiang~1;Ye Fan and Ren Junyan 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Microelectronics Science and Technology Innovation Platform;Fudan University;Shanghai 201203;China
Zhu Xiaoshi;Chen Chixiao;Xu Jialiang~1;Ye Fan and Ren Junyan 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Microelectronics Science and Technology Innovation Platform;Fudan University;Shanghai 201203;China
..............page:76-80
A saw-less direct conversion long term evolution receiver with 25% duty-cycle LO in 130 nm CMOS technology
He Siyuan~+;Zhang Changhong~1;Tao Liang~1;Zhang Weifeng Zeng Longyue;L Wei;and Wu Haijun 1 Guangzhou Runxin Information Technology Co.Ltd.Guangzhou 510663;China 2 School of Electronic and Information Engineering;South China University of Technology;Guangzhou 510641;China
He Siyuan~+;Zhang Changhong~1;Tao Liang~1;Zhang Weifeng Zeng Longyue;L Wei;and Wu Haijun 1 Guangzhou Runxin Information Technology Co.Ltd.Guangzhou 510663;China 2 School of Electronic and Information Engineering;South China University of Technology;Guangzhou 510641;China
..............page:70-75
Photoconductivity and surface chemical analysis of ZnO thin films deposited by solution-processing techniques for nano and microstructure fabrication
V.K.Dwivedi~;P.Srivastava~2;and G.Vijaya Prakash~ 1 Nanophotonics Laboratory;Department of Physics;Indian Institute of Technology Delhi;Hauz khas;New Delhi-110 016; India 2 Nanostech Laboratory;Department of Physics;Indian Institute of Technology Delhi;Hauz khas;New Delhi-110 016;India
V.K.Dwivedi~;P.Srivastava~2;and G.Vijaya Prakash~ 1 Nanophotonics Laboratory;Department of Physics;Indian Institute of Technology Delhi;Hauz khas;New Delhi-110 016; India 2 Nanostech Laboratory;Department of Physics;Indian Institute of Technology Delhi;Hauz khas;New Delhi-110 016;India
..............page:12-16
Effects of seed layer on the performance of microcrystalline silicon germanium solar cells
Cao Yu;Zhang Jianjun;Li Tianwei;Huang Zhenhua Ma Jun;Yang Xu;Ni Jian;Geng Xinhua and Zhao Ying Institute of Photo-Electronic Thin Film Devices and Technique of Nankai University;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin;Key Laboratory of Opto-Electronic Information Science and Technology of Ministry of Education;Tianjin 300071;China
Cao Yu;Zhang Jianjun;Li Tianwei;Huang Zhenhua Ma Jun;Yang Xu;Ni Jian;Geng Xinhua and Zhao Ying Institute of Photo-Electronic Thin Film Devices and Technique of Nankai University;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin;Key Laboratory of Opto-Electronic Information Science and Technology of Ministry of Education;Tianjin 300071;China
..............page:58-62
A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer
Zhao Qiuming~1;Li Qi;Tang Ning~1;and Li Yongchang 1 School of Information and Communication;Guilin University of Electronic Technology;Guilin 541004;China 2 Guilin Strong Micro Electronics Co.;Ltd;Guilin 541004;China
Zhao Qiuming~1;Li Qi;Tang Ning~1;and Li Yongchang 1 School of Information and Communication;Guilin University of Electronic Technology;Guilin 541004;China 2 Guilin Strong Micro Electronics Co.;Ltd;Guilin 541004;China
..............page:31-34
Evaluation of planarization capability of copper slurry in the CMP process
Yin Kangda;Wang Shengli;Liu Yuling Wang Chenwei;and Li Xiang Institute of Microelectronics;Hebei University of Technology;Tianjin 300130;China
Yin Kangda;Wang Shengli;Liu Yuling Wang Chenwei;and Li Xiang Institute of Microelectronics;Hebei University of Technology;Tianjin 300130;China
..............page:133-136
A multi-path gated ring oscillator based time-to-digital converter in 65 nm CMOS technology
Jiang Chen;Huang Yumei~+;and Hong Zhiliang State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
Jiang Chen;Huang Yumei~+;and Hong Zhiliang State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
..............page:81-85
A 6-7 GHz,40 dB receiver RF front-end with 4.5 dB minimum noise figure in 0.13μm CMOS for IR-UWB applications
Qin Xi;Huang Yumei;and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
Qin Xi;Huang Yumei;and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
..............page:90-96
Dynamic avalanche behavior of power MOSFETs and IGBTs under unclamped inductive switching conditions
Lu Jiang;Tian Xiaoli;Lu Shuojin;Zhou Hongyu Zhu Yangjun;and Han Zhengsheng Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Lu Jiang;Tian Xiaoli;Lu Shuojin;Zhou Hongyu Zhu Yangjun;and Han Zhengsheng Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:26-30
Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors
Zhao Xiaofeng;Wen Dianzhong;Zhuang Cuicui;Cao Jingya and Wang Zhiqiang Key Laboratory of Electronics Engineering;College of Heilongjiang Province;Heilongjiang University;Harbin 150080;China
Zhao Xiaofeng;Wen Dianzhong;Zhuang Cuicui;Cao Jingya and Wang Zhiqiang Key Laboratory of Electronics Engineering;College of Heilongjiang Province;Heilongjiang University;Harbin 150080;China
..............page:127-132
Research on the diamond MISFET
Zhou Jianjun;Bai Song;Kong Cen;Geng Xijiao Lu Haiyan;Kong Yuechan and Chen Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute; Nanjing 210016;China
Zhou Jianjun;Bai Song;Kong Cen;Geng Xijiao Lu Haiyan;Kong Yuechan and Chen Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute; Nanjing 210016;China
..............page:48-50
A CMOS low power,process/temperature variation tolerant RSSI with an integrated AGC loop
Lei Qianqian~;Lin Min;and Shi Yin 1 Department of Physics;Xi’an Polytechnic University;Xi’an 710048;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China
Lei Qianqian~;Lin Min;and Shi Yin 1 Department of Physics;Xi’an Polytechnic University;Xi’an 710048;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China
..............page:97-104
Nanoindentation on the doubler plane of KDP single crystal
Guo Xiaoguang;Zhang Xiaoji;Tang Xianzhao Guo Dongming;Gao Hang;and Teng Xiaoji Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education;Dalian University of Technology;Dalian 116023;China
Guo Xiaoguang;Zhang Xiaoji;Tang Xianzhao Guo Dongming;Gao Hang;and Teng Xiaoji Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education;Dalian University of Technology;Dalian 116023;China
..............page:21-25
Optical properties of GaAs
J.O.Akinlami and A.O.Ashamu Department of Physics;Federal University of Agriculture;P.M.B 2240;Abeokuta;Ogun State;Nigeria
J.O.Akinlami and A.O.Ashamu Department of Physics;Federal University of Agriculture;P.M.B 2240;Abeokuta;Ogun State;Nigeria
..............page:7-11
Te vapor annealing of indium-doped CdMnTe crystals
Zhang Jijun;Wang Linjun;Min Jiahua;Qin Kaifeng Shi Zhubin;and Liang Xiaoyan School of Materials Science and Engineering;Shanghai University;Shanghai 200072;China
Zhang Jijun;Wang Linjun;Min Jiahua;Qin Kaifeng Shi Zhubin;and Liang Xiaoyan School of Materials Science and Engineering;Shanghai University;Shanghai 200072;China
..............page:17-20
chuang xin qu dong , shi gan xing bang guo jia zi ran ke xue ji jin 2012 nian ban dao ti ke xue ling yu shen qing xiang mu gai kuang fen xi
he jie pan qing
he jie pan qing
..............page:137-150
The architecture design of a 2mW 18-bit high speed weight voltage type DAC based on dual weight resistance chain
Chen Qixing~ and Luo Qiyu 1 Hunan Urban Construction College;Changsha 410015;China 2 China National Electronics Import & Export Corp.;Beijing 100036;China
Chen Qixing~ and Luo Qiyu 1 Hunan Urban Construction College;Changsha 410015;China 2 China National Electronics Import & Export Corp.;Beijing 100036;China
..............page:121-126