1674-4926
2013 Issue 2
A differential automatic gain control circuit with two-stage -10 to 50 dB tuning range VGAs
Wang Wenbo;Mao Luhong;Xiao Xindong Zhang Shilin;and Xie Sheng 1 School of Electronic and Information Engineering;Tianjin University;Tianjin 300072;China 2 The Macro-System Engineering Department of CNGC;Beijing 100089;China
Wang Wenbo;Mao Luhong;Xiao Xindong Zhang Shilin;and Xie Sheng 1 School of Electronic and Information Engineering;Tianjin University;Tianjin 300072;China 2 The Macro-System Engineering Department of CNGC;Beijing 100089;China
..............page:103-108
Electronic structures and optical properties of a SiC nanotube with vacancy defects
Song Jiuxu;Yang Yintang;Wang Ping;Guo Lixin and Zhang Zhiyong 1 Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices; School of Microelectronics;Xidian University;Xi’an 710071;China 2 School of Electronic Engineering;Xian Shiyou University;Xi’an 710065;China 3 School of Science;Xidian University;Xi’an 710071;China 4 Information Science and Technology Institution;Northwest University;Xi’an 710127;China
Song Jiuxu;Yang Yintang;Wang Ping;Guo Lixin and Zhang Zhiyong 1 Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices; School of Microelectronics;Xidian University;Xi’an 710071;China 2 School of Electronic Engineering;Xian Shiyou University;Xi’an 710065;China 3 School of Science;Xidian University;Xi’an 710071;China 4 Information Science and Technology Institution;Northwest University;Xi’an 710127;China
..............page:1-5
A 10 MHz ripple-based on-time controlled buck converter with dual ripple compensation
Lü Danzhu;Yu Jiale;and Hong Zhiliang State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
Lü Danzhu;Yu Jiale;and Hong Zhiliang State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
..............page:86-92
A substrate-free optical readout focal plane array with a heat sink structure
Liu Ruiwen~2;Kong Yanmei;Jiao Binbin Li Zhigang Shang Haiping;Lu Dike Gao Chaoqun~2;Chen Dapeng;and Zhang Qingchuan 1 Integrated Circuit Advanced Process Center;Key Laboratory of Microelectronics Device and Integration Technology; Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Kunshan MicroOptica Electronic Co.Ltd;Kunshan 215300;China 3 University of Science and Technology of China;Hefei 230027;China
Liu Ruiwen~2;Kong Yanmei;Jiao Binbin Li Zhigang Shang Haiping;Lu Dike Gao Chaoqun~2;Chen Dapeng;and Zhang Qingchuan 1 Integrated Circuit Advanced Process Center;Key Laboratory of Microelectronics Device and Integration Technology; Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Kunshan MicroOptica Electronic Co.Ltd;Kunshan 215300;China 3 University of Science and Technology of China;Hefei 230027;China
..............page:46-51
A multivariate process capability index with a spatial coefficient
Wang Shaoxi;Wang Mingxin;Fan Xiaoya Zhang Shengbing;and Han Ru School of Software and Microelectronics;Northwestern Polytechnical University;Xi’an 710021;China
Wang Shaoxi;Wang Mingxin;Fan Xiaoya Zhang Shengbing;and Han Ru School of Software and Microelectronics;Northwestern Polytechnical University;Xi’an 710021;China
..............page:129-132
Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs
Chen Wanjun~;Zhang Jing~1;Zhang Bo;and Chen Kevin Jing 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronics Science and Technology of China;Chengdu 610054;China 2 Department of Electronic and Computer Engineering;Hong Kong University of Science and Technology;Hong Kong;China
Chen Wanjun~;Zhang Jing~1;Zhang Bo;and Chen Kevin Jing 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronics Science and Technology of China;Chengdu 610054;China 2 Department of Electronic and Computer Engineering;Hong Kong University of Science and Technology;Hong Kong;China
..............page:37-40
A low glitch 12-bit current-steering CMOS DAC for CNC systems
Lei Jianming;Gui Hanshu;and Hu Beiwen School of Optical and Electronic Information;Huazhong University of Science and Technology;Wuhan 430074;China
Lei Jianming;Gui Hanshu;and Hu Beiwen School of Optical and Electronic Information;Huazhong University of Science and Technology;Wuhan 430074;China
..............page:98-102
Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device
Aritra Acharyya~;Suranjana Banerjee~2;and J.P.Banerjee~1 1 Institute of Radio Physics and Electronics;University of Calcutta;92;APC Road;Kolkata-700009;India 2 Academy of Technology;West Bengal University of Technology;Adisaptagram;Hooghly-712121;West Bengal;India
Aritra Acharyya~;Suranjana Banerjee~2;and J.P.Banerjee~1 1 Institute of Radio Physics and Electronics;University of Calcutta;92;APC Road;Kolkata-700009;India 2 Academy of Technology;West Bengal University of Technology;Adisaptagram;Hooghly-712121;West Bengal;India
..............page:19-30
Phase noise modeling in LC oscillators implemented in SiGe technology
M.Bouhouche~;S.Latreche~1;and C.Gontrand~2 1 Universite Mentouri;Faculte des Sciences de l’Ingenieur;Departement d’Electronique;Laboratoire Hypertrequence & Semi-conducteur;25000;Constantine;Alegria 2 Universite de Lyon;Villeurbanne;F-69621;France
M.Bouhouche~;S.Latreche~1;and C.Gontrand~2 1 Universite Mentouri;Faculte des Sciences de l’Ingenieur;Departement d’Electronique;Laboratoire Hypertrequence & Semi-conducteur;25000;Constantine;Alegria 2 Universite de Lyon;Villeurbanne;F-69621;France
..............page:60-66
Discrete ternary particle swarm optimization for area optimization of MPRM circuits
Yu Haizhen Wang Pengjun;Wang Disheng and Zhang Huihong Institute of Circuits and Systems;Ningbo University;Ningbo 315211;China
Yu Haizhen Wang Pengjun;Wang Disheng and Zhang Huihong Institute of Circuits and Systems;Ningbo University;Ningbo 315211;China
..............page:118-123
Analysis on the positive dependence of channel length on ESD failure current of a GGNMOS in a 5 V CMOS
Wu Daoxun;Jiang Lingli;Fan Hang;Fang Jian and Zhang Bo State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Wu Daoxun;Jiang Lingli;Fan Hang;Fang Jian and Zhang Bo State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:41-45
A low jitter PLL clock used for phase change memory
Hong Xiao Chen Houpeng Song Zhitang Cai Daolin and Li Xi State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Micro-System and Information Technology; Chinese Academy of Sciences;Shanghai 200050;China
Hong Xiao Chen Houpeng Song Zhitang Cai Daolin and Li Xi State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Micro-System and Information Technology; Chinese Academy of Sciences;Shanghai 200050;China
..............page:124-128
A clock generator for a high-speed high-resolution pipelined A/D converter
Zhao Lei Yang Yintang;Zhu Zhangming;and Liu Lianxi School of Microelectronics;Xidian University;Xi’an 710071;China
Zhao Lei Yang Yintang;Zhu Zhangming;and Liu Lianxi School of Microelectronics;Xidian University;Xi’an 710071;China
..............page:72-77
Flicker and thermal noise in an n-channel underlap DG FinFET in a weak inversion region
Sudhansu Kumar Pati~;Hemant Pardeshi~1;Godwin Raj~1;N Mohankumar~2; and Chandan Kumar Sarkar~1 1 Nano Device Simulation Laboratory;Electronics and Telecommunication Engineering Department;Jadavpur University; Kolkata-700 032;India 2 SKP College of Engineering;Tiruvannamalai;Tamilnadu - 606 611;India
Sudhansu Kumar Pati~;Hemant Pardeshi~1;Godwin Raj~1;N Mohankumar~2; and Chandan Kumar Sarkar~1 1 Nano Device Simulation Laboratory;Electronics and Telecommunication Engineering Department;Jadavpur University; Kolkata-700 032;India 2 SKP College of Engineering;Tiruvannamalai;Tamilnadu - 606 611;India
..............page:31-36
A novel switched capacitor bandgap reference with a correlated double sampling structure
Chen Jianguang~;Hao Yueguo~2;and Cheng Yuhua 1 System-on-Chip Laboratory;Institute of Microelectronics;Peking University;Beijing 100871;China 2 Shanghai Research Institute of Microelectronics;Peking University;Shanghai 201023;China
Chen Jianguang~;Hao Yueguo~2;and Cheng Yuhua 1 System-on-Chip Laboratory;Institute of Microelectronics;Peking University;Beijing 100871;China 2 Shanghai Research Institute of Microelectronics;Peking University;Shanghai 201023;China
..............page:109-112
Development of a novel accelerometer based on an overlay detection bridge
Du Chunhui;He Changde~1;Ge Xiaoyang Zhang Yongping Yu Jiaqi Song Xiaopeng and Zhang Wendong 1 Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;North University of China; Taiyuan 030051;China 2 Key Laboratory of Science and Technology on Electronic Test & Measurement;North University of China;Taiyuan 030051; China
Du Chunhui;He Changde~1;Ge Xiaoyang Zhang Yongping Yu Jiaqi Song Xiaopeng and Zhang Wendong 1 Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;North University of China; Taiyuan 030051;China 2 Key Laboratory of Science and Technology on Electronic Test & Measurement;North University of China;Taiyuan 030051; China
..............page:52-59
A fast novel soft-start circuit for peak current-mode DC-DC buck converters
Li Jie;Yang Miao;Sun Weifeng;Lu Xiaoxia Xu Shen;and Lu Shengli National ASIC System Engineering Research Center;Southeast University;Nanjing 210096;China
Li Jie;Yang Miao;Sun Weifeng;Lu Xiaoxia Xu Shen;and Lu Shengli National ASIC System Engineering Research Center;Southeast University;Nanjing 210096;China
..............page:93-97
Effect of Sn-doping on the structural,electrical and magnetic properties of(In0.95-xSnxFe0.05)2O3 films
Xing Pengfei~;Chen Yanxue~2;and Sun Shaohua 1 Department of Applied Physics;Faculty of Science;Tianjin University;Tianjin 300072;China 2 School of Physics;Shandong University;Jinan 250100;China
Xing Pengfei~;Chen Yanxue~2;and Sun Shaohua 1 Department of Applied Physics;Faculty of Science;Tianjin University;Tianjin 300072;China 2 School of Physics;Shandong University;Jinan 250100;China
..............page:15-18
Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor
Zhou Yu;Li Xinxing~1;Tan Renbing;Xue Wei Huang Yongdan Lou Shitao;Zhang Baoshun and Qin Hua 1 Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-tech and Nano-bionics;Chinese Academy of Sciences;Suzhou 215123;China 2 University of Chinese Academy of Sciences;Beijing 100049;China 3 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 4 i-Lab;Suzhou Institute of Nano-tech and Nano-bionics;Chinese Academy of Sciences;Suzhou 215123;China
Zhou Yu;Li Xinxing~1;Tan Renbing;Xue Wei Huang Yongdan Lou Shitao;Zhang Baoshun and Qin Hua 1 Key Laboratory of Nanodevices and Applications;Suzhou Institute of Nano-tech and Nano-bionics;Chinese Academy of Sciences;Suzhou 215123;China 2 University of Chinese Academy of Sciences;Beijing 100049;China 3 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 4 i-Lab;Suzhou Institute of Nano-tech and Nano-bionics;Chinese Academy of Sciences;Suzhou 215123;China
..............page:6-10
A 14-bit 1-GS/s DAC with a programmable interpolation filter in 65 nm CMOS
Zhao Qi;Li Ran~1;Qiu Dong;Yi Ting~;Bill Yang Liu~2; and Hong Zhiliang~1 1 State Key Laboratory of ASIC and System;Fudan University.Shanghai 201203;China 2 Analog Devices;Shanghai 200021;China
Zhao Qi;Li Ran~1;Qiu Dong;Yi Ting~;Bill Yang Liu~2; and Hong Zhiliang~1 1 State Key Laboratory of ASIC and System;Fudan University.Shanghai 201203;China 2 Analog Devices;Shanghai 200021;China
..............page:78-85
Influence of growth time on crystalline structure,conductivity and optical properties of ZnO thin films
Said Benramache~;Foued Chabane~2;Boubaker Benhaoua~3;and Fatima Z.Lemmadi~2 1 Material Sciences Laboratory;Faculty of Science;University of Biskra;07000;Algeria 2 Mechanical Engineering;Faculty of Technology;University of Biskra;07000;Algeria 3 Physics Laboratory;Institute of Technology;University of E1-oued;39000;Algeria
Said Benramache~;Foued Chabane~2;Boubaker Benhaoua~3;and Fatima Z.Lemmadi~2 1 Material Sciences Laboratory;Faculty of Science;University of Biskra;07000;Algeria 2 Mechanical Engineering;Faculty of Technology;University of Biskra;07000;Algeria 3 Physics Laboratory;Institute of Technology;University of E1-oued;39000;Algeria
..............page:11-14
0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA
Lu Zhiyi;Xie Hongyun;Huo Wenjuan;and Zhang Wanrong College of Electronic Information and Control Engineering;Beijing University of Technology;Beijing 100124;China
Lu Zhiyi;Xie Hongyun;Huo Wenjuan;and Zhang Wanrong College of Electronic Information and Control Engineering;Beijing University of Technology;Beijing 100124;China
..............page:67-71
An 8 bit 12 MS/s asynchronous successive approximation register ADC with an on-chip reference
Yu Meng;Wu Lipeng;Li Fule;and Wang Zhihua Institute of Microelectronics;Tsinghua University;Beijing 100084;China
Yu Meng;Wu Lipeng;Li Fule;and Wang Zhihua Institute of Microelectronics;Tsinghua University;Beijing 100084;China
..............page:113-117