1674-4926
2013 Issue 11
AC-electronic and dielectric properties of semiconducting phthalocyanine compounds: a comparative study
Safa’a M.Hraibat;Rushdi M-L.Kitaneh;Mohammad M.Abu- Samreh;Abdelkarim M.Saleh;Al-Quds University;Physics Dept.Abu Dees;Jerusalem;P.O.Box 20002;Palestine;via Israel;
Safa’a M.Hraibat;Rushdi M-L.Kitaneh;Mohammad M.Abu- Samreh;Abdelkarim M.Saleh;Al-Quds University;Physics Dept.Abu Dees;Jerusalem;P.O.Box 20002;Palestine;via Israel;
..............page:5-10
Influence of an anisotropic parabolic potential on the quantum dot qubit
Zhao Cuilan;Cai Chunyu;Xiao Jinglin;College of Physics and Electronic Information;Inner Mongolia National University;
Zhao Cuilan;Cai Chunyu;Xiao Jinglin;College of Physics and Electronic Information;Inner Mongolia National University;
..............page:11-14
Influence of incident angle on the defect mode of locally doped photonic crystal
Wang Jin;Wen Tingdun;Xu Liping;Liu Zufan;Department of Physics;North University of China;China Aviation Lithium Battery Co.;Ltd;
Wang Jin;Wen Tingdun;Xu Liping;Liu Zufan;Department of Physics;North University of China;China Aviation Lithium Battery Co.;Ltd;
..............page:15-18
Correlation between electrical conductivity–optical band gap energy and precursor molarities ultrasonic spray deposition of ZnO thin films
Said Benramache;Okba Belahssen;Abderrazak Guettaf;Ali Arif;Material Sciences Laboratory;Faculty of Science;University of Biskra;Physic Laboratory of Thin Films and Applications LPCMA;University of Biskra;Department of Electrical;Faculty of Technology;University of Biskra;
Said Benramache;Okba Belahssen;Abderrazak Guettaf;Ali Arif;Material Sciences Laboratory;Faculty of Science;University of Biskra;Physic Laboratory of Thin Films and Applications LPCMA;University of Biskra;Department of Electrical;Faculty of Technology;University of Biskra;
..............page:19-23
The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD
Jing Liang;Xiao Hongling;Wang Xiaoliang;Wang Cuimei;Deng Qingwen;Li Zhidong;Ding Jieqin;Wang Zhanguo;Hou Xun;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices;ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics;Xi’an Jiaotong University;
Jing Liang;Xiao Hongling;Wang Xiaoliang;Wang Cuimei;Deng Qingwen;Li Zhidong;Ding Jieqin;Wang Zhanguo;Hou Xun;Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices;ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics;Xi’an Jiaotong University;
..............page:24-28
Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects
P.Vimala;N.B.Balamurugan;Department of Electronics and Communication Engineering;Thiagarajar College of Engineering;
P.Vimala;N.B.Balamurugan;Department of Electronics and Communication Engineering;Thiagarajar College of Engineering;
..............page:29-34
A new approach to extracting the RF parameters of asymmetric DG MOSFETs with the NQS effect
Sudhansu Kumar Pati;Kalyan Koley;Arka Dutta;N Mohankumar;Chandan Kumar Sarkar;Nano Device Simulation Laboratory;Electronics and Telecommunication Engineering Department;Jadavpur University;SKP College of Engineering;Tiruvannamalai;
Sudhansu Kumar Pati;Kalyan Koley;Arka Dutta;N Mohankumar;Chandan Kumar Sarkar;Nano Device Simulation Laboratory;Electronics and Telecommunication Engineering Department;Jadavpur University;SKP College of Engineering;Tiruvannamalai;
..............page:35-39
RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT
T.R.Lenka;G.N.Dash;A.K.Panda;Department of Electronics and Communication Engineering;National Institute of Technology Silchar;School of Physics;Sambalpur University;National Institute of Science and Technology;
T.R.Lenka;G.N.Dash;A.K.Panda;Department of Electronics and Communication Engineering;National Institute of Technology Silchar;School of Physics;Sambalpur University;National Institute of Science and Technology;
..............page:40-45
Low ohmic contact AlN/GaN HEMTs grown by MOCVD
Gu Guodong;Dun Shaobo;Lü Yuanjie;Han Tingting;Xu Peng;Yin Jiayun;Feng Zhihong;Science and Technology on ASIC Laboratory;Hebei Semiconductor Research Institute;
Gu Guodong;Dun Shaobo;Lü Yuanjie;Han Tingting;Xu Peng;Yin Jiayun;Feng Zhihong;Science and Technology on ASIC Laboratory;Hebei Semiconductor Research Institute;
..............page:46-48
Improved memory performance of metal–oxide–nitride–oxide–silicon by annealing the SiO2 tunnel layer in different nitridation atmospheres
He Meilin;Xu Jingping;Chen Jianxiong;Liu Lu;School of Optical and Electronic Information;Huazhong University of Science and Technology;
He Meilin;Xu Jingping;Chen Jianxiong;Liu Lu;School of Optical and Electronic Information;Huazhong University of Science and Technology;
..............page:49-52
Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods
An Tielei;Sun Bo;Wei Tongbo;Zhao Lixia;Duan Ruifei;Liao Yuanxun;Li Jinmin;Yi Futing;Institute of Semiconductors;Chinese Academy of Sciences;Institute of High Energy Physics;Chinese Academy of Sciences;
An Tielei;Sun Bo;Wei Tongbo;Zhao Lixia;Duan Ruifei;Liao Yuanxun;Li Jinmin;Yi Futing;Institute of Semiconductors;Chinese Academy of Sciences;Institute of High Energy Physics;Chinese Academy of Sciences;
..............page:53-56
Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO2 dielectric and a TiN metal gate
Han Kai;Ma Xueli;Xiang Jinjuan;Yang Hong;Wang Wenwu;Department of Physics and Electronic Science;Weifang University;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
Han Kai;Ma Xueli;Xiang Jinjuan;Yang Hong;Wang Wenwu;Department of Physics and Electronic Science;Weifang University;Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;
..............page:57-60
The corner rounding modeling technique in SPICE simulations for deeply scaled MOSFETs
Sun Wei;Yang Dake;School of Electronic and Mechanical Engineering;Wuyi University;Meihua Industrial Group Ltd.;
Sun Wei;Yang Dake;School of Electronic and Mechanical Engineering;Wuyi University;Meihua Industrial Group Ltd.;
..............page:61-64
Rapid evaluation method for the normal lifetime of an infrared light-emitting diode
Guo Xiaofeng;Tan Manqing;Wei Xin;Jiao Jian;Guo Wentao;Sun Ningning;Institute of Semiconductors;Chinese Academy of Sciences;
Guo Xiaofeng;Tan Manqing;Wei Xin;Jiao Jian;Guo Wentao;Sun Ningning;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:65-68
Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer
Li Shaolan;Zhang Lichun;Editorial Department;Ludong University;School of Physics and Optoelectronic Engineering;Ludong University;
Li Shaolan;Zhang Lichun;Editorial Department;Ludong University;School of Physics and Optoelectronic Engineering;Ludong University;
..............page:69-73
High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current
Dong Zhen;Wang Cuiluan;Jing Hongqi;Liu Suping;Ma Xiaoyu;National Engineering Research Center for Optoelectronic Devices;Institute of Semiconductors;Chinese Academy of Sciences;
Dong Zhen;Wang Cuiluan;Jing Hongqi;Liu Suping;Ma Xiaoyu;National Engineering Research Center for Optoelectronic Devices;Institute of Semiconductors;Chinese Academy of Sciences;
..............page:74-77
Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSb superlattices
Wang Guowei;Xiang Wei;Xu Yingqiang;Zhang Liang;Peng Zhenyu;Lü Yanqiu;Si Junjie;Wang Juan;Xing Junliang;Ren Zhengwei;Niu Zhichuan;State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Luoyang Optical Electronics Development Center;
Wang Guowei;Xiang Wei;Xu Yingqiang;Zhang Liang;Peng Zhenyu;Lü Yanqiu;Si Junjie;Wang Juan;Xing Junliang;Ren Zhengwei;Niu Zhichuan;State Key Laboratory of Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences;Luoyang Optical Electronics Development Center;
..............page:78-82
The fabrication of vibration energy harvester arrays based on AlN piezoelectric film
Shang Zhengguo;Li Dongling;Wen Zhiyu;Zhao Xingqiang;Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology;Chongqing University;National Center for International Research of Micro/Nano-System and New Material Technology;Chongqing University;Microsystem Research Center of Chongqing University;
Shang Zhengguo;Li Dongling;Wen Zhiyu;Zhao Xingqiang;Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology;Chongqing University;National Center for International Research of Micro/Nano-System and New Material Technology;Chongqing University;Microsystem Research Center of Chongqing University;
..............page:83-86
A feasibility study on SiC optoinjected CCD with buried channels
Ye Na;Chen Zhiming;Xie Longfei;Electronic Engineering Department;Xi’an University of Technology;
Ye Na;Chen Zhiming;Xie Longfei;Electronic Engineering Department;Xi’an University of Technology;
..............page:87-91
Design of a Bionic Cilia MEMS three-dimensional vibration sensor
Li Zhen;Zhang Guojun;Xue Chenyang;Wu Shujuan;Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;Science and Technology on Electronic Test & Measurement Laboratory;North University of China;
Li Zhen;Zhang Guojun;Xue Chenyang;Wu Shujuan;Key Laboratory of Instrumentation Science & Dynamic Measurement;Ministry of Education;Science and Technology on Electronic Test & Measurement Laboratory;North University of China;
..............page:92-98
A novel ESD protection structure for output pads
Fan Hang;Jiang Lingli;Zhang Bo;State Key Laboratory of Electronic Thin Film and Integrated Devices;University of Electronic Science and Technology of China;
Fan Hang;Jiang Lingli;Zhang Bo;State Key Laboratory of Electronic Thin Film and Integrated Devices;University of Electronic Science and Technology of China;
..............page:99-102
A digital input class-D audio amplifier with sixth-order PWM
Luo Shumeng;Li Dongmei;Institution of Microelectronics;Tsinghua University;Electronic Engineering Department;Tsinghua University;
Luo Shumeng;Li Dongmei;Institution of Microelectronics;Tsinghua University;Electronic Engineering Department;Tsinghua University;
..............page:103-108
A low power high gain gain-controlled LNAC＋mixer for GNSS receivers
Wei Binbin;Jiang Jinguang;School of Physics and Technology;Wuhan University;GNSS Research Center;Wuhan University;Suzhou Institute;Wuhan University;
Wei Binbin;Jiang Jinguang;School of Physics and Technology;Wuhan University;GNSS Research Center;Wuhan University;Suzhou Institute;Wuhan University;
..............page:109-115
Design and analysis of a three-stage voltage-controlled ring oscillator
Lei Xuemei;Wang Zhigong;Shen Lianfeng;School of Information Science and Engineer;Southeast University;College of Electronic Information Engineering;Inner Mongolia University;
Lei Xuemei;Wang Zhigong;Shen Lianfeng;School of Information Science and Engineer;Southeast University;College of Electronic Information Engineering;Inner Mongolia University;
..............page:116-121
A novel interconnect optimal buffer insertion model considering the self-heating effect
Zhang Yan;Dong Gang;Yang Yintang;Wang Ning;Ding Yaoshun;Liu Xiaoxian;Wang Fengjuan;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials Devices;Microelectronics Institute;Xidian University;
Zhang Yan;Dong Gang;Yang Yintang;Wang Ning;Ding Yaoshun;Liu Xiaoxian;Wang Fengjuan;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials Devices;Microelectronics Institute;Xidian University;
..............page:122-127
A 97 dB dynamic range CSA-based readout circuit with analog temperature compensation for MEMS capacitive sensors
Yin Tao;Zhang Chong;Wu Huanming;Wu Qisong;Yang Haigang;Institute of Electronics;Chinese Academy of Sciences;
Yin Tao;Zhang Chong;Wu Huanming;Wu Qisong;Yang Haigang;Institute of Electronics;Chinese Academy of Sciences;
..............page:128-135
60-GHz array antenna with standard CMOS technology on Schott Borofloat
Luo Jun;Wang Yan;Yue Ruifeng;CAD Laboratory;Institute of Microelectronics;Tsinghua University;
Luo Jun;Wang Yan;Yue Ruifeng;CAD Laboratory;Institute of Microelectronics;Tsinghua University;
..............page:136-139
A 4 GHz 32 bit direct digital frequency synthesizer based on a novel architecture
Wu Jin;Chen Jianwu;Wu Danyu;Zhou Lei;Jiang Fan;Jin Zhi;Liu Xinyu;Institute of Microelectronics;Chinese Academy of Sciences;Key Laboratory of Microelectronics Devices & Integrated Technology;
Wu Jin;Chen Jianwu;Wu Danyu;Zhou Lei;Jiang Fan;Jin Zhi;Liu Xinyu;Institute of Microelectronics;Chinese Academy of Sciences;Key Laboratory of Microelectronics Devices & Integrated Technology;
..............page:140-145
Rwtraction statement
Editorial Office Journal of Semiconductors;
Editorial Office Journal of Semiconductors;
..............page:146