The optical–electrical properties of doped β-FeSi2
Yan Wanjun;Zhang Chunhong;Zhang Zhongzheng;Xie Quan;Guo Benhua;Zhou Shiyun;Physics and Electronic Science Department;Anshun University;Institute of New Type Optoelectronic Materials and Technology;College of Science;Guizhou University;
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Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime
Aritra Acharyya;Jit Chakraborty;Kausik Das;Subir Datta;Pritam De;Suranjana Banerjee;J.P.Banerjee;Institute of Radio Physics and Electronics;University of Calcutta;92;APC Road;Kolkata 700009;India;Supreme Knowledge Foundation Group of Institutions;Sir J.C.Bose School of Engineering;1;Khan Road;Mankundu;Hooghly;West Bengal 712139;India;Academy of Technology;West Bengal University of Technology;Adisaptagram;Hooghly 712121;West Bengal;India;
..............page:50-57
An integrated MEMS piezoresistive tri-axis accelerometer
Zhang Yongping;He Changde;Yu Jiaqi;Du Chunhui;Zhang Juanting;Chou Xiujian;Zhang Wendong;Key Laboratory of Instrumentation&Science Dynamic Measurement;Ministry of Education;North University of China;Key Laboratory of Science Technology on Electronic Test&Measurement North University of China;
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..............page:159-164
Low temperature Sn-rich Au–Sn wafer-level bonding
Fang Zhiqiang;Mao Xu;Yang Jinling;Yang Fuhua;Research Center of Engineering for Semiconductor Integrated Technology;Institute of Semiconductors;Chinese Academy of Sciences;State Key Laboratory of Transducer Technology;
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..............page:169-174