0253-4177
2013 Issue 1
A wideband current-commutating passive mixer for multi-standard receivers in a 0.18 μm CMOS
Bao Kuan;Fan Xiangning.;Li Wei;and Wang Zhigong Institute of RF-&OE-ICs;School of Information Science and Engineering;Southeast University;Nanjing 210096;China
Bao Kuan;Fan Xiangning.;Li Wei;and Wang Zhigong Institute of RF-&OE-ICs;School of Information Science and Engineering;Southeast University;Nanjing 210096;China
..............page:74-82
An 11-bit ENOB,accuracy-programmable,and non-calibrating time-mode SAR ADC
Fan Hua.;Han Xue;Wei Qi;and Yang Huazhong Division of Circuits and Systems;Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
Fan Hua.;Han Xue;Wei Qi;and Yang Huazhong Division of Circuits and Systems;Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
..............page:118-128
A new LTPS TFT AC pixel circuit for an AMOLED
Zhang Yongwen and Chen Wenbin.School of Optoelectronic Information;University of Electronic Science and Technology of China;Chengdu 610054;China
Zhang Yongwen and Chen Wenbin.School of Optoelectronic Information;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:113-117
Ultrasonic spray pyrolysis deposition of SnSe and SnSe2 using a single spray solution
Jorge Sergio Narro-Rios;Manoj Ramachandran;Dalia Martínez-Escobar;and Aarón Snchez-Jurez Centro de investigación en Energía;UNAM;P.O.Box 34;62580 Temixco;Morelos;Mxico
Jorge Sergio Narro-Rios;Manoj Ramachandran;Dalia Martínez-Escobar;and Aarón Snchez-Jurez Centro de investigación en Energía;UNAM;P.O.Box 34;62580 Temixco;Morelos;Mxico
..............page:12-15
SPTC~+-IGBT characteristics and optimization
Chu Weili1;Zhu Yangjun1;2;Zhang Jie1;2;and Hu Aibin1 1Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2Jiangsu R&D Center for Internet of Things;Wuxi 214135;China
Chu Weili1;Zhu Yangjun1;2;Zhang Jie1;2;and Hu Aibin1 1Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2Jiangsu R&D Center for Internet of Things;Wuxi 214135;China
..............page:45-48
A wideband frequency synthesizer with VCO and AFC co-design for fast calibration
Lou Liheng1;2;Sun Lingling2;Gao Haijun2;and Zhan Haiting2 1Institute of VLSI;Zhejiang University;Hangzhou 310007;China 2Key Laboratory of RF Circuits and Systems;Ministry of Education;Hangzhou Dianzi University;Hangzhou 310018;China
Lou Liheng1;2;Sun Lingling2;Gao Haijun2;and Zhan Haiting2 1Institute of VLSI;Zhejiang University;Hangzhou 310007;China 2Key Laboratory of RF Circuits and Systems;Ministry of Education;Hangzhou Dianzi University;Hangzhou 310018;China
..............page:107-112
Cu doped AlSb polycrystalline thin films
Wu Lili;Jin Shuo;Zeng Guanggen.;Zhang Jingquan;Li Wei;Feng Lianghuan;Li Bing;and Wang Wenwu College of Materials Science and Engineering;Sichuan University;Chengdu 610064;China
Wu Lili;Jin Shuo;Zeng Guanggen.;Zhang Jingquan;Li Wei;Feng Lianghuan;Li Bing;and Wang Wenwu College of Materials Science and Engineering;Sichuan University;Chengdu 610064;China
..............page:20-22
A wideband 0.13 μm CMOS LC-VCO for IMT-advanced and UWB applications
Tang Xin.;Huang Fengyi;Tang Xusheng;and Shao Mingchi RF & OEIC Research Institute;National Mobile Communications Research Laboratory;Southeast University;Nanjing 210096;China
Tang Xin.;Huang Fengyi;Tang Xusheng;and Shao Mingchi RF & OEIC Research Institute;National Mobile Communications Research Laboratory;Southeast University;Nanjing 210096;China
..............page:83-88
Properties of a polaron in a quantum dot:a squeezed-state variational approach
Yin Jiwen;Li Weiping;and Yu Yifu Department of Physics and Electronic Informational Engineering;Inner Mongolia Chifeng College;Chifeng 024000;China
Yin Jiwen;Li Weiping;and Yu Yifu Department of Physics and Electronic Informational Engineering;Inner Mongolia Chifeng College;Chifeng 024000;China
..............page:1-5
Calculation of surface acoustic waves in a multilayered piezoelectric structure
Zhang Zuwei1;2;3;.Wen Zhiyu1;2;3;and Hu Jing1;2;3 1Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology;Chongqing University;Chongqing 400030;China 2National Center for International Research of Micro/Nano-System and New Material Technology;Chongqing University;Chongqing 400030;China 3Microsystem Research Center;Chongqing University;Chongqing 400030;China
Zhang Zuwei1;2;3;.Wen Zhiyu1;2;3;and Hu Jing1;2;3 1Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology;Chongqing University;Chongqing 400030;China 2National Center for International Research of Micro/Nano-System and New Material Technology;Chongqing University;Chongqing 400030;China 3Microsystem Research Center;Chongqing University;Chongqing 400030;China
..............page:6-11
Design of a novel mixer with high gain and linearity improvement for DRM/DAB applications
Wu Yiqiang;Wang Zhigong.;Xu Jian;Wang Jian;Zhang Ouli;and Tang Lu Institution of RF-& OE-ICs;Southeast University;Nanjing 210096;China
Wu Yiqiang;Wang Zhigong.;Xu Jian;Wang Jian;Zhang Ouli;and Tang Lu Institution of RF-& OE-ICs;Southeast University;Nanjing 210096;China
..............page:89-93
Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter
Wu Xue1;2;3;Lu Wu1;2;Wang Yiyuan1;2;3;Xu Jialing1;4;Zhang Leqing1;2;3;Lu Jian1;2;3;Yu Xin1;2;3;Zhang Xingyao1;2;3;and Hu Tianle1;4 1Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;Urumqi 830011;China 2Xinjiang Key Laboratory of Electronic Information Materials and Devices;Urumqi 830011;China 3University of Chinese Academy of Sciences;Beijing 100049;China 4Xinjiang University;Urumqi 830046;China
Wu Xue1;2;3;Lu Wu1;2;Wang Yiyuan1;2;3;Xu Jialing1;4;Zhang Leqing1;2;3;Lu Jian1;2;3;Yu Xin1;2;3;Zhang Xingyao1;2;3;and Hu Tianle1;4 1Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;Urumqi 830011;China 2Xinjiang Key Laboratory of Electronic Information Materials and Devices;Urumqi 830011;China 3University of Chinese Academy of Sciences;Beijing 100049;China 4Xinjiang University;Urumqi 830046;China
..............page:94-99
Analysis of the subthreshold characteristics of vertical tunneling field effect transistors
Han Zhongfang;Ru Guoping.and Ruan Gang State Key Laboratory of ASIC and System;Department of Microelectronics;Fudan University;Shanghai 200433;China
Han Zhongfang;Ru Guoping.and Ruan Gang State Key Laboratory of ASIC and System;Department of Microelectronics;Fudan University;Shanghai 200433;China
..............page:28-34
Transconductance bimodal effect of PDSOI submicron H-gate MOSFETs
Mei Bo;Bi Jinshun;Bu Jianhui;and Han Zhengsheng.Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Mei Bo;Bi Jinshun;Bu Jianhui;and Han Zhengsheng.Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:39-44
Influence of Cu_xS back contact on CdTe thin film solar cells
Lei Zhi;Feng Lianghuan;Zeng Guanggen;Li Wei;Zhang Jingquan;Wu Lili;and Wang Wenwu College of Materials Science and Engineering;Sichuan University;Chengdu 610041;China
Lei Zhi;Feng Lianghuan;Zeng Guanggen;Li Wei;Zhang Jingquan;Wu Lili;and Wang Wenwu College of Materials Science and Engineering;Sichuan University;Chengdu 610041;China
..............page:58-60
Increasing substrate resistance to improve the turn-on uniformity of a high-voltage multi-finger GG-nLDMOS
He Chuan.;Jiang Lingli;Fan Hang;and Zhang Bo State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology;Chengdu 610054;China
He Chuan.;Jiang Lingli;Fan Hang;and Zhang Bo State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology;Chengdu 610054;China
..............page:49-52
Capacitance and conductance dispersion in AlGaN/GaN heterostructure
Yan Dawei.;Wang Fuxue;Zhu Zhaomin;Cheng Jianmin;and Gu Xiaofeng Key Laboratory of Advanced Process Control for Light Industry;Department of Electronic Engineering;Jiangnan University;Wuxi 214122;China
Yan Dawei.;Wang Fuxue;Zhu Zhaomin;Cheng Jianmin;and Gu Xiaofeng Key Laboratory of Advanced Process Control for Light Industry;Department of Electronic Engineering;Jiangnan University;Wuxi 214122;China
..............page:35-38
First-principles calculation on the concentration of intrinsic defects in 4H-SiC
Cheng Ping1;Zhang Yuming2;and Zhang Yimen2 1School of Information and Engineering;Ningbo Dahongying University;Ningbo 315175;China 2Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;Xi’an 710071;China
Cheng Ping1;Zhang Yuming2;and Zhang Yimen2 1School of Information and Engineering;Ningbo Dahongying University;Ningbo 315175;China 2Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;Xi’an 710071;China
..............page:16-19
A novel latch-up free SCR-LDMOS with high holding voltage for a power-rail ESD clamp
Pan Hongwei.;Liu Siyang;and Sun Weifeng National ASIC System Engineering Research Center;Southeast University;Nanjing 210096;China
Pan Hongwei.;Liu Siyang;and Sun Weifeng National ASIC System Engineering Research Center;Southeast University;Nanjing 210096;China
..............page:53-57
Effect of tunneling current on the noise characteristics of a 4H-SiC Read Avalanche diode
Deepak K.Karan;Pranati Panda;and G.N.Dash.School of Physics;Sambalpur University;Jyoti Vihar;Burla;Sambalpur - 768 019;India
Deepak K.Karan;Pranati Panda;and G.N.Dash.School of Physics;Sambalpur University;Jyoti Vihar;Burla;Sambalpur - 768 019;India
..............page:23-27
A fully integrated multi-standard frequency synthesizer for GNSS receivers with cellular network positioning capability
Li Bin;Fan Xiangning.;Li Wei;Zhang Li;and Wang Zhigong Institute of RF-& OE-ICs;School of Information Science and Engineering;Southeast University;Nanjing 210096;China
Li Bin;Fan Xiangning.;Li Wei;Zhang Li;and Wang Zhigong Institute of RF-& OE-ICs;School of Information Science and Engineering;Southeast University;Nanjing 210096;China
..............page:66-73
Monolithic quasi-sliding-mode controller for SIDO buck converter with a self-adaptive free-wheeling current level
Wu Xiaobo;Liu Qing;Zhao Menglian.;and Chen Mingyang Institute of VLSI Design;Zhejiang University;Hangzhou 310027;China
Wu Xiaobo;Liu Qing;Zhao Menglian.;and Chen Mingyang Institute of VLSI Design;Zhejiang University;Hangzhou 310027;China
..............page:100-106
A novel broadband power amplifier in SiGe HBT technology
Li Wenyuan.and Zhang Qian Institute of RF-& OE-ICs;Southeast University;Nanjing 210096;China
Li Wenyuan.and Zhang Qian Institute of RF-& OE-ICs;Southeast University;Nanjing 210096;China
..............page:61-65