0253-4177
2012 Issue 9
A novel low ripple charge pump with a 2X/1.5X booster for PCM
Fu Cong;Song Zhitang;Chen Houpeng;Cai Daolin; Wang Qian;Hong Xiao;Ding Sheng;and Li Xi State Key Laboratory of Functional Materials for Informatics;Laboratory of Nanotechnology;Shanghai Institute of Micro-system and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China
Fu Cong;Song Zhitang;Chen Houpeng;Cai Daolin; Wang Qian;Hong Xiao;Ding Sheng;and Li Xi State Key Laboratory of Functional Materials for Informatics;Laboratory of Nanotechnology;Shanghai Institute of Micro-system and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China
..............page:89-94
Dielectric confinement on exciton binding energy and nonlinear optical properties in a strained Zn1-xinMgx（in）Se/Zn1-x（out）Mgx（out）Se quantum well
J.Abraham Hudson Mark~1 and A.John Peter~2 1 Department of Physics;NPR Arts & Science College;Natham;Dindigul-624 401;India 2 Department of Physics;Government Arts College;Melur-625 106;Madurai;India
J.Abraham Hudson Mark~1 and A.John Peter~2 1 Department of Physics;NPR Arts & Science College;Natham;Dindigul-624 401;India 2 Department of Physics;Government Arts College;Melur-625 106;Madurai;India
..............page:1-7
A neutron radiation-hardened superluminescent diode
Jiao Jian~1;Tan Manqing~1;Zhao Miao~;and Chang Jinlong~1 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Jiao Jian~1;Tan Manqing~1;Zhao Miao~;and Chang Jinlong~1 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:69-73
Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation
Jiang Ran~1;Meng Lingguo~1;Zhang Xijian~1;Hyung-Suk Jung~2; and Cheol Seong Hwang~2 1 School of Physics;Shandong University;Jinan 250100;China 2 Department of Materials Science and Engineering;Seoul National University;Seoul 151-747;Korea
Jiang Ran~1;Meng Lingguo~1;Zhang Xijian~1;Hyung-Suk Jung~2; and Cheol Seong Hwang~2 1 School of Physics;Shandong University;Jinan 250100;China 2 Department of Materials Science and Engineering;Seoul National University;Seoul 151-747;Korea
..............page:34-37
A fuzzy-logic-based approach to accurate modeling of a double gate MOSFET for nanoelectronic circuit design
F.Djeffal~;A.Ferdi~1;and M.Chahdi~2 1 LEA;Department of Electronics;University of Batna;05000 Batna;Algeria 2 LEPCM;Department of Electronics;University of Batna;05000 Batna;Algeria
F.Djeffal~;A.Ferdi~1;and M.Chahdi~2 1 LEA;Department of Electronics;University of Batna;05000 Batna;Algeria 2 LEPCM;Department of Electronics;University of Batna;05000 Batna;Algeria
..............page:43-49
Chaotic dynamics dependence on doping density in weakly coupled GaAs/AlAs superlattices
YangGui;Li Yuanhong;Zhang Fengying;and Li Yuqi 1 College of Physics & Electrical Engineering;Anyang Normal University;Anyang 455000;China 2 School of Physics and Electronics;Henan;University;Kaifeng 475004;China 3 Department of General Education;Henan Vocational College of Chemical Technology;Zhengzhou 450002;China 4Henan Institute of Science and Technology;Xinxiang 453003;China
YangGui;Li Yuanhong;Zhang Fengying;and Li Yuqi 1 College of Physics & Electrical Engineering;Anyang Normal University;Anyang 455000;China 2 School of Physics and Electronics;Henan;University;Kaifeng 475004;China 3 Department of General Education;Henan Vocational College of Chemical Technology;Zhengzhou 450002;China 4Henan Institute of Science and Technology;Xinxiang 453003;China
..............page:8-12
A nanostructured copper telluride thin film grown at room temperature by an electrodeposition method
S.S.Dhasade~1;S.H.Han~2;and V.J.Fulari~1 1 Holography and Material Research Laboratatory;Department of Physics;Shivaji University;Kolhapur 416004;India 2 Department of Chemistry;Hanyang University;South Korea
S.S.Dhasade~1;S.H.Han~2;and V.J.Fulari~1 1 Holography and Material Research Laboratatory;Department of Physics;Shivaji University;Kolhapur 416004;India 2 Department of Chemistry;Hanyang University;South Korea
..............page:22-27
Fabrication of high-voltage light emitting diodes with a deep isolation groove structure
Ding Yan;Guo Weiling;Zhu Yanxu;Liu Ying; Liu Jianpeng;and Yan Weiwei Key Laboratory of Opto-Electronics Technology of the Ministry of Education;Beijing University of Technology; Beijing 100124;China
Ding Yan;Guo Weiling;Zhu Yanxu;Liu Ying; Liu Jianpeng;and Yan Weiwei Key Laboratory of Opto-Electronics Technology of the Ministry of Education;Beijing University of Technology; Beijing 100124;China
..............page:74-77
High efficiency class-I audio power amplifier using a single adaptive supply
Peng Zhenfei~1;Yang Shanshan~;Feng Yong~; Liu Yang~2;and Hong Zhiliang~1 1 State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China 2Shanghai Design Center;Analog Devices;Shanghai 200021;China
Peng Zhenfei~1;Yang Shanshan~;Feng Yong~; Liu Yang~2;and Hong Zhiliang~1 1 State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China 2Shanghai Design Center;Analog Devices;Shanghai 200021;China
..............page:95-101
A 10-bit 50-MS/s reference-free low power SAR ADC in 0.18-μm SOI CMOS technology
Qiao Ning~;Zhang Guoquan~2;Yang Bo~2; Liu Zhongli~2;and Yu Fang~2 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Qiao Ning~;Zhang Guoquan~2;Yang Bo~2; Liu Zhongli~2;and Yu Fang~2 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:115-123
A multi-mode multi-band RF receiver front-end for a TD-SCDMA/LTE/LTE-advanced in 0.18-μm CMOS process
Guo Rui~ and Zhang Haiying 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Shenyang ZhongKe Microelectronics Co.;Ltd;Shenyang 110179;China
Guo Rui~ and Zhang Haiying 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Shenyang ZhongKe Microelectronics Co.;Ltd;Shenyang 110179;China
..............page:102-107
A low power 14 bit 51.2 kS/s double-sampling extended counting ADC with a class-AB OTA
Chen Honglei;Wu Dong;Shen Yanzhao;and Xu Jun Institute of Microelectronics;Tsinghua University;Beijing 100084;China
Chen Honglei;Wu Dong;Shen Yanzhao;and Xu Jun Institute of Microelectronics;Tsinghua University;Beijing 100084;China
..............page:108-114
Effect of ZnO films on CdTe solar cells
Liu Tingliang;He Xulin;Zhang Jingquan;Feng Lianghuan; Wu Lili;Li Wei;Zeng Guanggen;and Li Bing College of Materials Science & Engineering;Sichuan University;Chengdu 610064;China
Liu Tingliang;He Xulin;Zhang Jingquan;Feng Lianghuan; Wu Lili;Li Wei;Zeng Guanggen;and Li Bing College of Materials Science & Engineering;Sichuan University;Chengdu 610064;China
..............page:28-33
Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films
Said Benramache~1;Boubaker Benhaoua~2;and Foued Chabane~3 1 Material Sciences Laboratory;Faculty of Science;University of Biskra 07000;Algeria 2 Physics Laboratory;Institute of Technology;University of El-oued 39000;Algeria 3 Mechanics Department;Faculty of Technology;University of Biskra 07000;Algeria
Said Benramache~1;Boubaker Benhaoua~2;and Foued Chabane~3 1 Material Sciences Laboratory;Faculty of Science;University of Biskra 07000;Algeria 2 Physics Laboratory;Institute of Technology;University of El-oued 39000;Algeria 3 Mechanics Department;Faculty of Technology;University of Biskra 07000;Algeria
..............page:18-21
A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate
Cui Wei~;Tang Zhaohuan~2;Tan Kaizhou~2;Zhang Jing~2; ZhongYi~2;Hu Huiyong~3;Xu Shiliu~2;Li Ping~1; and Hu Gangyi~2 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;UESTC;Chengdu 610023;China 2 Science and Technology on Analog Integrated Circuit Laboratory;Chongqing 400060;China 3 Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices;Microelectronics School;Xidian University;Xi’an 710071;China
Cui Wei~;Tang Zhaohuan~2;Tan Kaizhou~2;Zhang Jing~2; ZhongYi~2;Hu Huiyong~3;Xu Shiliu~2;Li Ping~1; and Hu Gangyi~2 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;UESTC;Chengdu 610023;China 2 Science and Technology on Analog Integrated Circuit Laboratory;Chongqing 400060;China 3 Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices;Microelectronics School;Xidian University;Xi’an 710071;China
..............page:65-68
Effect of varying layouts on the gate temperature for multi-finger AlGaN/GaN HEMTs
Wang Jianhui;Wang Xinhua;Pang Lei;Chen Xiaojuan Jin Zhi;and Liu Xinyu Key Laboratory of Microwave Devices & Integrated Circuits;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
Wang Jianhui;Wang Xinhua;Pang Lei;Chen Xiaojuan Jin Zhi;and Liu Xinyu Key Laboratory of Microwave Devices & Integrated Circuits;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
..............page:60-64
Influence of thermal treatment temperatures on CdTe nanocrystal films and photoelectric properties of ITO/CdTe/Al
Xu Wenqing;Qu Shengchun;Wang Kefan;Bi Yu;Liu Kong ;and Wang Zhanguo Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Xu Wenqing;Qu Shengchun;Wang Kefan;Bi Yu;Liu Kong ;and Wang Zhanguo Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:50-54
Design and process test of a novel MOEMS accelerometer based on Raman-Nath diffraction
Zhang Zuwei~;WenZhiyu~;Shang Zhengguo~; Li Dongling~;and Hu Jing~ 1 Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology;Chongqing University; Chongqing 400030;China 2 National Center for International Research of Micro/Nano-System and New Material Technology;Chongqing University; Chongqing 400030;China 3 Microsystem Research Center of Chongqing University;Chongqing 400030;China
Zhang Zuwei~;WenZhiyu~;Shang Zhengguo~; Li Dongling~;and Hu Jing~ 1 Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology;Chongqing University; Chongqing 400030;China 2 National Center for International Research of Micro/Nano-System and New Material Technology;Chongqing University; Chongqing 400030;China 3 Microsystem Research Center of Chongqing University;Chongqing 400030;China
..............page:82-88
A novel high performance ESD power clamp circuit with a small area
Yang Zhaonian;Liu Hongxia;Li Li;and Zhuo Qingqing Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices; School of Microelectronics;Xidian University;Xi’an 710071;China
Yang Zhaonian;Liu Hongxia;Li Li;and Zhuo Qingqing Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices; School of Microelectronics;Xidian University;Xi’an 710071;China
..............page:124-130
A tunneling piezoresistive model for polysilicon
Chuai Rongyan~1;Wang Jian~1;Wu Meile~1;Liu Xiaowei Jin Xiaoshi~1;and Yang Lijian 1 Information Science and Engineering School;Shenyang University of Technology;Shenyang 110023;China 2 Department of Microelectronics;Harbin Institute of Technology;Harbin 150001;China
Chuai Rongyan~1;Wang Jian~1;Wu Meile~1;Liu Xiaowei Jin Xiaoshi~1;and Yang Lijian 1 Information Science and Engineering School;Shenyang University of Technology;Shenyang 110023;China 2 Department of Microelectronics;Harbin Institute of Technology;Harbin 150001;China
..............page:13-17
Improving poor fill factors for solar cells via light-induced plating
Xing Zhao;Jia Rui;Ding Wuchang;Meng Yanlong; Jin Zhi;and Liu Xinyu Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Xing Zhao;Jia Rui;Ding Wuchang;Meng Yanlong; Jin Zhi;and Liu Xinyu Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:78-81
A low-powerlow-voltage slew-rate enhancement circuit for two-stage operational amplifiers
Shu Chen~1;Xu Jun~1;Ye Fan~1;and Ren Junyan~ 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Microelectronics Science and Technology Innovation Platform;Fudan University;Shanghai 200433;China
Shu Chen~1;Xu Jun~1;Ye Fan~1;and Ren Junyan~ 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Microelectronics Science and Technology Innovation Platform;Fudan University;Shanghai 200433;China
..............page:131-136
Design of a three-layer hot-wall horizontal flow MOCVD reactor
Gu Chengyan;Lee Chengming;and Liu Xianglin Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Gu Chengyan;Lee Chengming;and Liu Xianglin Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:38-42
Turn-on and turn-off voltages of an avalanche p-n junction
Zhang Guoqing~1;Han Dejun~2;Zhu Changjun~1; and Zhai Xuejun~1 1 School of Science;Xi’an Polytechnic University;Xi’an 710048;China 2 The Key Laboratory of Beam Technology and Materials Modification of the Ministry of Education;Beijing Normal University; Beijing Radiation Center;Beijing 100875;China
Zhang Guoqing~1;Han Dejun~2;Zhu Changjun~1; and Zhai Xuejun~1 1 School of Science;Xi’an Polytechnic University;Xi’an 710048;China 2 The Key Laboratory of Beam Technology and Materials Modification of the Ministry of Education;Beijing Normal University; Beijing Radiation Center;Beijing 100875;China
..............page:55-59