0253-4177
2012 Issue 7
A 2-mW 50-dB DR wideband hybrid AGC for a GNSS receiver in 65 nm CMOS
Xu Yang;Chi Baoyong;Xu Yang;Qi Nan; Wang Zhihua Institute of Microelectronics;Tsinghua University;Beijing 100084;China
Xu Yang;Chi Baoyong;Xu Yang;Qi Nan; Wang Zhihua Institute of Microelectronics;Tsinghua University;Beijing 100084;China
..............page:94-101
Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD
Tao Zhikuo~;Zhang Rong~;Xiu Xiangqian~;Cui Xugao~1; Li Li;Li Xin;Xie ZiLi~1;Zheng Youdou~1; Zheng Rongkun~3;Simon P Ringer~3 1 Key Laboratory of Advanced Photonic and Electronic Materials;School of Electronic Science and Engineering; Nanjing University;Nanjing 210093;China 2 College of Electronic Science and Engineering;Nanjing University of Posts and Telecommunications;Nanjing 210003;China 3 Australia Key Center for Microscopy and Microanalysis;University of Sydney;Sydney;NSW 2006;Australia
Tao Zhikuo~;Zhang Rong~;Xiu Xiangqian~;Cui Xugao~1; Li Li;Li Xin;Xie ZiLi~1;Zheng Youdou~1; Zheng Rongkun~3;Simon P Ringer~3 1 Key Laboratory of Advanced Photonic and Electronic Materials;School of Electronic Science and Engineering; Nanjing University;Nanjing 210093;China 2 College of Electronic Science and Engineering;Nanjing University of Posts and Telecommunications;Nanjing 210003;China 3 Australia Key Center for Microscopy and Microanalysis;University of Sydney;Sydney;NSW 2006;Australia
..............page:16-19
A different approach for determining the responsivity of n~+p detectors using scanning electron microscopy
Omeime Xerviar Esebamen;Gran Thungstrm;and Hans-Erik Nilsson Department of Information Technology and Media;Mid Sweden University;Holmgatan 10;SE-851 70;Sundsvall;Sweden
Omeime Xerviar Esebamen;Gran Thungstrm;and Hans-Erik Nilsson Department of Information Technology and Media;Mid Sweden University;Holmgatan 10;SE-851 70;Sundsvall;Sweden
..............page:29-33
Design and fabrication of an InP arrayed waveguide grating for monolithic PICs
Pan Pan;An Junming;Wang Liangliang;Wu Yuanda; Wang Yue;Hu Xiongwei State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Pan Pan;An Junming;Wang Liangliang;Wu Yuanda; Wang Yue;Hu Xiongwei State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:65-68
A uniform phase noise QVCO with a feedback current source
Zhou Chunyuan;Zhang Lei Qian He Institute of Microelectronics;Tsinghua University;Beijing 100084;China
Zhou Chunyuan;Zhang Lei Qian He Institute of Microelectronics;Tsinghua University;Beijing 100084;China
..............page:69-73
Universal trench design method for a high-voltage SOI trench LDMOS
Hu Xiarong;Zhang Bo;Luo Xiaorong;Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Hu Xiarong;Zhang Bo;Luo Xiaorong;Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:47-50
Effect of a gate buffer layer on the performance of a 4H-SiC Schottky barrier field-effect transistor
Zhang Xianjun;Yang Yintang;Chai Changchun Duan Baoxing;Song Kun Chen Bin Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education; School of Microelectronics;Xidian University;Xi’an 710071;China
Zhang Xianjun;Yang Yintang;Chai Changchun Duan Baoxing;Song Kun Chen Bin Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education; School of Microelectronics;Xidian University;Xi’an 710071;China
..............page:34-38
Worst-case total dose radiation effect in deep-submicron SRAM circuits
Ding Lili~;Yao Zhibin~2;Guo Hongxia Chen Wei Fan Ruyu 1 Department of Engineering Physics;Tsinghua University;Beijing 100084;China 2 Northwest Institute of Nuclear Technology;Xi’an 710024;China
Ding Lili~;Yao Zhibin~2;Guo Hongxia Chen Wei Fan Ruyu 1 Department of Engineering Physics;Tsinghua University;Beijing 100084;China 2 Northwest Institute of Nuclear Technology;Xi’an 710024;China
..............page:121-125
A low-phase-noise ring oscillator with coarse and fine tuning in a standard CMOS process
Gao Haijun;Sun Lingling;Kuang Xiaofei and Lou Liheng Key Laboratory of RF Circuits and Systems;Ministry of Education;Hangzhou Dianzi University;Hangzhou 310018;China
Gao Haijun;Sun Lingling;Kuang Xiaofei and Lou Liheng Key Laboratory of RF Circuits and Systems;Ministry of Education;Hangzhou Dianzi University;Hangzhou 310018;China
..............page:85-88
The conductive path in HfO2:first principles study
Zhou Maoxiu;Zhao Qiang~1;Zhang Wei~1;Liu Qi~2; and Dai Yuehua~ 1 Institute of Electronic and Information Project;Anhui University;Hefei 230601;China 2 Laboratory of Nano-Fabrication and Novel Device Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Zhou Maoxiu;Zhao Qiang~1;Zhang Wei~1;Liu Qi~2; and Dai Yuehua~ 1 Institute of Electronic and Information Project;Anhui University;Hefei 230601;China 2 Laboratory of Nano-Fabrication and Novel Device Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:7-10
A fourth-order bandwidth-reconfigurable delta-sigma modulator for audio applications
Wang Junqian~1;Yang Haifeng;Wei Rui~1;Xu Jun~+; and Ren Junyan 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Microelectronics Science and Technology Innovation Platform;Fudan University;Shanghai 201203;China
Wang Junqian~1;Yang Haifeng;Wei Rui~1;Xu Jun~+; and Ren Junyan 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Microelectronics Science and Technology Innovation Platform;Fudan University;Shanghai 201203;China
..............page:74-79
Fabrication and characterization of a low frequency electromagnetic energy harvester
Abu Riduan Md.Foisal Gwiy-Sang Chung School of Electrical Engineering;University of Ulsan;Namgu;Ulsan 680-749;South Korea
Abu Riduan Md.Foisal Gwiy-Sang Chung School of Electrical Engineering;University of Ulsan;Namgu;Ulsan 680-749;South Korea
..............page:24-28
First-principles study of the electronic structures and optical properties of C-F-Be doped wurtzite ZnO
Zuo Chunying~;Wen Jing~1;and Zhong Cheng 1 College of Science;Heilongjiang Bayi Agricultural University;Daqing 163319;China 2 College of Chemistry and Molecular Sciences;Wuhan University;Wuhan 430072;China
Zuo Chunying~;Wen Jing~1;and Zhong Cheng 1 College of Science;Heilongjiang Bayi Agricultural University;Daqing 163319;China 2 College of Chemistry and Molecular Sciences;Wuhan University;Wuhan 430072;China
..............page:1-6
An integrated CMOS high data rate transceiver for video applications
Liang Yaping~;Che Dazhi Liang Cheng Sun Lingling 1 Hangzhou Dianzi University;Hangzhou 310018;China 2 Amedia Networks;Inc.;CA 92121;San Diego;USA
Liang Yaping~;Che Dazhi Liang Cheng Sun Lingling 1 Hangzhou Dianzi University;Hangzhou 310018;China 2 Amedia Networks;Inc.;CA 92121;San Diego;USA
..............page:89-93
Structural and optical properties of Zn-doped β-Ga2O3 films
Yue Wei;Yan Jinliang;Wu Jiangyan Zhang Liying School of Physics;Ludong University;Yantai 264025;China
Yue Wei;Yan Jinliang;Wu Jiangyan Zhang Liying School of Physics;Ludong University;Yantai 264025;China
..............page:20-23
A new FPGA with 4/5-input LUT and optimized carry chain
Mao Zhidong;Chen Liguang;Wang Yuan Lai Jinmei State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
Mao Zhidong;Chen Liguang;Wang Yuan Lai Jinmei State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
..............page:113-120
A new OLED SPICE model for pixel circuit simulation in OLED-on-silicon microdisplay design
Zhao Bohua~1;Huang Ran~1;Bu Jianhui;L Yinxue Wang Yiqi~1;Ma Fei~1;Xie Guohua~2;Zhang Zhensong Du Huan;Luo Jiajun;Han Zhengsheng Zhao Yi 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 National Laboratory of Integrated Optoelectronics;Jilin University;Changchun 130023;China
Zhao Bohua~1;Huang Ran~1;Bu Jianhui;L Yinxue Wang Yiqi~1;Ma Fei~1;Xie Guohua~2;Zhang Zhensong Du Huan;Luo Jiajun;Han Zhengsheng Zhao Yi 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 National Laboratory of Integrated Optoelectronics;Jilin University;Changchun 130023;China
..............page:102-107
A low on-resistance SOI LDMOS using a trench gate and a recessed drain
Ge Rui;Luo Xiaorong;Jiang Yongheng;Zhou Kun; Wang Pei;Wang Qi;Wang Yuangang;Zhang Bo; and Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Ge Rui;Luo Xiaorong;Jiang Yongheng;Zhou Kun; Wang Pei;Wang Qi;Wang Yuangang;Zhang Bo; and Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:43-46
A 20-GHz ultra-high-speed InP DHBT comparator
Huang Zhenxing;Zhou Lei;Su Yongbo Jin Zhi Microwave Devices and Integrated Circuits Department;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
Huang Zhenxing;Zhou Lei;Su Yongbo Jin Zhi Microwave Devices and Integrated Circuits Department;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
..............page:80-84
Investigation of the polysilicon p-i-n diode and diode string as a process compatible and portable ESD protection device
Jiang Yibo;Du Huan Han Zhengsheng Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Jiang Yibo;Du Huan Han Zhengsheng Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:60-64
Giant magnetoresistance in a two-dimensional electron gas modulated by ferromagnetic and Schottky metal stripes
Lu Jianduo~1;Xu Bin 1 Hubei Province Key Laboratory of Systems Science in Metallurgical Process;Wuhan University of Science and Technology; Wuhan 430081;China 2 Department of Mathematics and Information Sciences;North China Institute of Water Conservancy and Hydroelectric Power; Zhengzhou 450011;China
Lu Jianduo~1;Xu Bin 1 Hubei Province Key Laboratory of Systems Science in Metallurgical Process;Wuhan University of Science and Technology; Wuhan 430081;China 2 Department of Mathematics and Information Sciences;North China Institute of Water Conservancy and Hydroelectric Power; Zhengzhou 450011;China
..............page:51-55
Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer
Zhang Xiaojie~1;Yang Ruixia~;Wang Jinghui 1 College of Information Engineering;Hebei University of Technology;Tianjin 300130;China 2 The 13th Research Institute;China Electronics Technology Group Corporation;Shijiazhuang 050051;China
Zhang Xiaojie~1;Yang Ruixia~;Wang Jinghui 1 College of Information Engineering;Hebei University of Technology;Tianjin 300130;China 2 The 13th Research Institute;China Electronics Technology Group Corporation;Shijiazhuang 050051;China
..............page:56-59
A high-speed mixed-signal down-scaling circuit for DAB tuners
Tang Lu~+;Wang Zhigong~1;Xuan Jiahui~1;Yang Yang~1; Xu Jian~1;and Xu Yong~ 1 Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China 2 Institute of Sciences;PLA University of Science and Technology;Nanjing 211101;China
Tang Lu~+;Wang Zhigong~1;Xuan Jiahui~1;Yang Yang~1; Xu Jian~1;and Xu Yong~ 1 Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China 2 Institute of Sciences;PLA University of Science and Technology;Nanjing 211101;China
..............page:108-112
Humidity sensing properties of CU2O-PEPC nanocomposite films
Kh.S.Karimov~;M.Saleem~;Z.M.Karieva~4;A.Mateen~1; M.Tariq Saeed Chani~1;and Q.Zafar~5 1 GIK Institute of Engineering Sciences and Technology;Topi-23640;District Swabi;KPK;Pakistan 2 Physical Technical Institute of Academy of Sciences;Rudaki Ave.33;Dushanbe;734025;Tajikistan 3 Government College of Science;Wahdat Road;Lahore-54570;Pakistan 4 Tajik Technical University;Rajabov St.10;Dushanbe 734000;Tajikistan 5 COMSATS Institute of Information Technology;Islamabad;Pakistan
Kh.S.Karimov~;M.Saleem~;Z.M.Karieva~4;A.Mateen~1; M.Tariq Saeed Chani~1;and Q.Zafar~5 1 GIK Institute of Engineering Sciences and Technology;Topi-23640;District Swabi;KPK;Pakistan 2 Physical Technical Institute of Academy of Sciences;Rudaki Ave.33;Dushanbe;734025;Tajikistan 3 Government College of Science;Wahdat Road;Lahore-54570;Pakistan 4 Tajik Technical University;Rajabov St.10;Dushanbe 734000;Tajikistan 5 COMSATS Institute of Information Technology;Islamabad;Pakistan
..............page:11-15
A 10 Gb/s burst-mode clock and data recovery circuit
Gu Gaowei;Zhu En;Lin Ye Liu Wensong Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
Gu Gaowei;Zhu En;Lin Ye Liu Wensong Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
..............page:126-130
An 88 nm gate-length In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fmax of 201 GHz
Zhong Yinghui~;Wang Xiantai;SuYongbo;Cao Yuxiong Jin Zhi~;Zhang Yuming;Liu Xinyu 1 Microelectronics Institute;Xidian University;Xi’an 710071;China 2 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Zhong Yinghui~;Wang Xiantai;SuYongbo;Cao Yuxiong Jin Zhi~;Zhang Yuming;Liu Xinyu 1 Microelectronics Institute;Xidian University;Xi’an 710071;China 2 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:39-42