0253-4177
2012 Issue 6
Stacking fault energy in some single crystals
Aditya M.Vora Humanities and Social Science Department;S.T.B.S.College of Diploma Engineering;Swami Atmanand Sarswati Vidya Sankul;Opp.Kapodra Police Station;Varachha Road;Surat 395 006;Gujarat;India
Aditya M.Vora Humanities and Social Science Department;S.T.B.S.College of Diploma Engineering;Swami Atmanand Sarswati Vidya Sankul;Opp.Kapodra Police Station;Varachha Road;Surat 395 006;Gujarat;India
..............page:1-5
Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias
Xiao Wenbo~;He Xingdao~1;Gao Yiqing~1; Zhang Zhimin~1;Liu Jiangtao~2 1 Key Laboratory of Non-Destructive Test of Ministry of Education;Nanchang Hangkong University;Nanchang 330063;China 2 Department of Physics;Nanchang University;Nanchang 330031;China
Xiao Wenbo~;He Xingdao~1;Gao Yiqing~1; Zhang Zhimin~1;Liu Jiangtao~2 1 Key Laboratory of Non-Destructive Test of Ministry of Education;Nanchang Hangkong University;Nanchang 330063;China 2 Department of Physics;Nanchang University;Nanchang 330031;China
..............page:47-50
Characterization of the nanosized porous structure of black Si solar cells fabricated via a screen printing process
Tang Yehua~;Zhou Chunlan1;Wang Wenjing~1;Zhou Su~; Zhao Yan~;Zhao Lei~1;Li Hailing~1;Yan Baojun~; Chen Jingwei~;Fei Jianming~3;Cao Hongbin~3 1 Key Laboratory of Solar Thermal Energy and Photovoltaic System;Institute of Electrical Engineering;Chinese Academy of Sciences;Beijing 100190;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China 3 Eoplly New Energy Technology Co.;Ltd.;Nantong 226602;China
Tang Yehua~;Zhou Chunlan1;Wang Wenjing~1;Zhou Su~; Zhao Yan~;Zhao Lei~1;Li Hailing~1;Yan Baojun~; Chen Jingwei~;Fei Jianming~3;Cao Hongbin~3 1 Key Laboratory of Solar Thermal Energy and Photovoltaic System;Institute of Electrical Engineering;Chinese Academy of Sciences;Beijing 100190;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China 3 Eoplly New Energy Technology Co.;Ltd.;Nantong 226602;China
..............page:43-46
Study of radiation-induced leakage current between adjacent devices in a CMOS integrated circuit
Ding Lili~;Guo Hongxia~2;Chen Wei~2;I Fan Ruyu~ 1 Department of Engineering Physics;Tsinghua University;Beijing 100084;China 2 Northwest Institute of Nuclear Technology;Xi’an 710024;China
Ding Lili~;Guo Hongxia~2;Chen Wei~2;I Fan Ruyu~ 1 Department of Engineering Physics;Tsinghua University;Beijing 100084;China 2 Northwest Institute of Nuclear Technology;Xi’an 710024;China
..............page:37-42
High voltage generator circuit with low power and high efficiency applied in EEPROM
Liu Yan;Zhang Shilin;Zhao Yiqiang School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
Liu Yan;Zhang Shilin;Zhao Yiqiang School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
..............page:79-83
A novel circuit architecture for fourth subharmonic mixers
Yao Changfei~;XuConghai~2;Zhou Ming~2; Luo Yunsheng~2 1 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute; Nanjing 210016;China 2 Research Department of Microwave and Millimeter Wave Modules in Aerospace;Nanjing Electronic Devices Institute; Nanjing 210016;China
Yao Changfei~;XuConghai~2;Zhou Ming~2; Luo Yunsheng~2 1 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute; Nanjing 210016;China 2 Research Department of Microwave and Millimeter Wave Modules in Aerospace;Nanjing Electronic Devices Institute; Nanjing 210016;China
..............page:56-60
A 2.5 mW 370 mV/pF high linearity stray-immune symmetrical readout circuit for capacitive sensors
Zhou Kaimin;Wang Ziqiang;Zhang Chun Wang Zhihua Institute of Microelectronics;Tsinghua University;Beijing 100084;China
Zhou Kaimin;Wang Ziqiang;Zhang Chun Wang Zhihua Institute of Microelectronics;Tsinghua University;Beijing 100084;China
..............page:51-55
A 150%enhancement of PMOSFET mobility using hybrid orientation
Tang Zhaohuan~;Tan Kaizhou~1;CuiWei~1;Zhang Jing~1; ZhongYi~2;Xu Shiliu~;HaoYue~3;Zhang Heming~3; Hu Huiyong~3;Zhang Zhengfan~;Hu Gangyi~2 1 Science and Technology on Analog Integrated Circuit Laboratory;Chongqing 400060;China 2 Sichuan Institute of Solid-State Circuits;China Electronics Technology Group Corp;Chongqing 400060;China 3 Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices; School of Microelectronics;Xidian University;Xi’an 710071;China
Tang Zhaohuan~;Tan Kaizhou~1;CuiWei~1;Zhang Jing~1; ZhongYi~2;Xu Shiliu~;HaoYue~3;Zhang Heming~3; Hu Huiyong~3;Zhang Zhengfan~;Hu Gangyi~2 1 Science and Technology on Analog Integrated Circuit Laboratory;Chongqing 400060;China 2 Sichuan Institute of Solid-State Circuits;China Electronics Technology Group Corp;Chongqing 400060;China 3 Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices; School of Microelectronics;Xidian University;Xi’an 710071;China
..............page:20-23
A fast combination calibration of foreground and background for pipelined ADCs
Sun Kexu He Lenian Institute of VLSI Design;Zhejiang University;Hangzhou 310027;China
Sun Kexu He Lenian Institute of VLSI Design;Zhejiang University;Hangzhou 310027;China
..............page:84-94
Hot-carrier reliability in OPTVLD-LDMOS
Cheng Junji Chen Xingbi State Key Laboratory of Electronic Thin Films and Integrated Devices of China;University of Electronic Science and Technology of China;Chengdu 610054;China
Cheng Junji Chen Xingbi State Key Laboratory of Electronic Thin Films and Integrated Devices of China;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:24-27
A 200 mV low leakage current subthreshold SRAM bitcell in a 130 nm CMOS process
Bai Na~L Baitao~ 1 School of Information Science and Engineering;Southeast University;Nanjing 210096;China 2 School of Electronics and Information Engineering;Anhui University;Hefei 230601;China
Bai Na~L Baitao~ 1 School of Information Science and Engineering;Southeast University;Nanjing 210096;China 2 School of Electronics and Information Engineering;Anhui University;Hefei 230601;China
..............page:95-100
Rapid thermal annealing effects on vacuum evaporated ITO for InGaN/GaN blue LEDs
Ding Yan;Guo Weiling;Zhu Yanxu;Liu Jianpeng; Yan Weiwei Key Laboratory of Opto-Electronics Technology of the Ministry of Education;Beijing University of Technology; Beijing 100124;China
Ding Yan;Guo Weiling;Zhu Yanxu;Liu Jianpeng; Yan Weiwei Key Laboratory of Opto-Electronics Technology of the Ministry of Education;Beijing University of Technology; Beijing 100124;China
..............page:129-132
Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current
GuGuodong~;Cai Yong~;Feng Zhihong~1;Liu Bo~1; Zeng Chunhong~2;Yu Guohao~2;Dong Zhihua~2; Zhang Baoshun~2 1 Science and Technology on ASIC Laboratory;Hebei Semiconductor Research Institute;Shijiazhuang 050051;China 2 Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;Suzhou 215123;China
GuGuodong~;Cai Yong~;Feng Zhihong~1;Liu Bo~1; Zeng Chunhong~2;Yu Guohao~2;Dong Zhihua~2; Zhang Baoshun~2 1 Science and Technology on ASIC Laboratory;Hebei Semiconductor Research Institute;Shijiazhuang 050051;China 2 Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;Suzhou 215123;China
..............page:28-30
Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process
Yan Wei;Zhang Renping;Du Yandong;Han Weihua; Yang Fuhua Engineering Research Center for Semiconductor Integrated Technology;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Yan Wei;Zhang Renping;Du Yandong;Han Weihua; Yang Fuhua Engineering Research Center for Semiconductor Integrated Technology;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:31-36
Statistical key variable analysis and model-based control for improvement performance in a deep reactive ion etching process
Chen Shan~1;Pan Tianhong~;Li Zhengming~1; Jang Shi-Shang~2 1 School of Electrical and Information Engineering;Jiangsu University;Zhenjiang 212013;China 2 Department of Chemical Engineering;National Tsing-Hua University;Hsin-Chu;Taiwan 30013;China
Chen Shan~1;Pan Tianhong~;Li Zhengming~1; Jang Shi-Shang~2 1 School of Electrical and Information Engineering;Jiangsu University;Zhenjiang 212013;China 2 Department of Chemical Engineering;National Tsing-Hua University;Hsin-Chu;Taiwan 30013;China
..............page:118-124
A 6th order wideband active-RC LPF for LTE application
Wei Baoyue;Li Hongkun;Wang Yunfeng Zhang Haiying Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Wei Baoyue;Li Hongkun;Wang Yunfeng Zhang Haiying Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:61-66
Simultaneous quality improvement of the roughness and refractive index of SiC thin films
Gh.Sareminia~;H.Simchi~;A.Ostovari~1;L.Lavasanpour~1 1 Semiconductor Science and Technology;P.O.Box;16575-169;Tehran;Iran 2 Department of Physics;Iran University of Science and Technology;Narmak;Tehran;1644;Iran
Gh.Sareminia~;H.Simchi~;A.Ostovari~1;L.Lavasanpour~1 1 Semiconductor Science and Technology;P.O.Box;16575-169;Tehran;Iran 2 Department of Physics;Iran University of Science and Technology;Narmak;Tehran;1644;Iran
..............page:6-9
Low-power digital ASIC for on-chip spectral analysis of low-frequency physiological signals
NieZedong~;Zhang Fengjuan~1;Li Jie Wang Lei~ 1 Shenzhen Institutes of Advanced Technology;Chinese Academy of Sciences;Shenzhen 518055;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
NieZedong~;Zhang Fengjuan~1;Li Jie Wang Lei~ 1 Shenzhen Institutes of Advanced Technology;Chinese Academy of Sciences;Shenzhen 518055;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
..............page:67-70
H-plasma-assisted aluminum induced crystallization of amorphous silicon
Li Juan~;Liu Ning~1;Luo Chong~1;Meng Zhiguo~1; Xiong Shaozhen~1;Hoi Sing Kwok~2 1 Institute of Photo-Electronics;Nankai University;Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology;Tianjin 300071;China 2 Department of Electronic and Computer Engineering;The Hong Kong University of Science and Technology; Clear Water Bay;Kowloon;Hong Kong;China
Li Juan~;Liu Ning~1;Luo Chong~1;Meng Zhiguo~1; Xiong Shaozhen~1;Hoi Sing Kwok~2 1 Institute of Photo-Electronics;Nankai University;Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology;Tianjin 300071;China 2 Department of Electronic and Computer Engineering;The Hong Kong University of Science and Technology; Clear Water Bay;Kowloon;Hong Kong;China
..............page:125-128
Anodic bonding using a hybrid electrode with a two-step bonding process
Luo Wei;Xie Jing;Zhang Yang; Li Chaobo Xia Yang Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Luo Wei;Xie Jing;Zhang Yang; Li Chaobo Xia Yang Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:114-117
An AES chip with DPA resistance using hardware-based random order execution
YuBo;Li Xiangyu;Chen Cong;Sun Yihe; Wu Liji Zhang Xiangmin Tsinghua National Laboratory for Information Science and Technology;Institute of Microelectronics;Tsinghua University; Beijing;100084;China
YuBo;Li Xiangyu;Chen Cong;Sun Yihe; Wu Liji Zhang Xiangmin Tsinghua National Laboratory for Information Science and Technology;Institute of Microelectronics;Tsinghua University; Beijing;100084;China
..............page:101-108
The design of electroabsorption modulators with negative chirp and very low insertion loss
Kambiz Abedi Department of Electrical Engineering;Faculty of Electrical and Computer Engineering;Shahid Beheshti University;G.C;Evin 1983963113;Tehran;Iran
Kambiz Abedi Department of Electrical Engineering;Faculty of Electrical and Computer Engineering;Shahid Beheshti University;G.C;Evin 1983963113;Tehran;Iran
..............page:14-19
Adaptive IF selection and IQ mismatch compensation in a low-IF GSM receiver
Zhang Cheng;Wang Lifang;Tan Xi Min Hao State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
Zhang Cheng;Wang Lifang;Tan Xi Min Hao State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
..............page:71-78
Analysis and modeling of on-chip transformers under two ground conditions
Wei Jiaju;Wang Zhigong;Li Zhiqun Tang Lu Institute of RF-& OE-ICs;Southeast University;Nanjing 210096;China
Wei Jiaju;Wang Zhigong;Li Zhiqun Tang Lu Institute of RF-& OE-ICs;Southeast University;Nanjing 210096;China
..............page:109-113
Tungsten oxide nanostructures:controllable growth and field emission
Yue Shuanglin;Xu Tingting;Li Wei;Yan Ji Yi He Key Laboratory for Physics and Chemistry of Nanodevices;Department of Electronics;Peking University; Beijing 100871;China
Yue Shuanglin;Xu Tingting;Li Wei;Yan Ji Yi He Key Laboratory for Physics and Chemistry of Nanodevices;Department of Electronics;Peking University; Beijing 100871;China
..............page:10-13