0253-4177
2012 Issue 5
Electrical and γ-ray energy spectrum response properties of PbI2 crystal grown by physical vapor transport
Sun Hui;Zhu Xinghua;Yang Dingyu;He Zhiyu Zhu Shifu;and Zhao Beijun 1 Department of Materials Science;Sichuan University;Chengdu 610064;China 2 School of Optoelectronic Technology;Chengdu University of Information Technology;Chengdu 610225;China
Sun Hui;Zhu Xinghua;Yang Dingyu;He Zhiyu Zhu Shifu;and Zhao Beijun 1 Department of Materials Science;Sichuan University;Chengdu 610064;China 2 School of Optoelectronic Technology;Chengdu University of Information Technology;Chengdu 610225;China
..............page:17-20
Design of a CMOS multi-mode GNSS receiver VCO
Long Qiang;Zhuang Yiqi;Yin Yue;and Li Zhenrong National Key Laboratory of Wide Band-Gap Semiconductor Technology;School of Microelectronics;Xidian University; Xi’an 710071;China
Long Qiang;Zhuang Yiqi;Yin Yue;and Li Zhenrong National Key Laboratory of Wide Band-Gap Semiconductor Technology;School of Microelectronics;Xidian University; Xi’an 710071;China
..............page:99-104
Optical coupling optimization in a novel metal-semiconductor-metal ultraviolet photodetector based on semicircular Schottky electrodes
Chen Bin;Yang Yintang~1;Chai Changchun~1;Wang Ning Ma Zhenyang~1;and Xie Xuanrong 1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices; School of Microelectronics;Xidian University;Xi’an 710071;China 2 No.771 Institute of Microelectronics Technology;Xi’an 710054;China
Chen Bin;Yang Yintang~1;Chai Changchun~1;Wang Ning Ma Zhenyang~1;and Xie Xuanrong 1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices; School of Microelectronics;Xidian University;Xi’an 710071;China 2 No.771 Institute of Microelectronics Technology;Xi’an 710054;China
..............page:74-79
Improved field emission properties of carbon nanotube cathodes by nickel electroplating and corrosion
Xiao Xiaojing;Ye Yun;Zheng Longwu;and Guo Tailiang Institute of Optoelectronic Display Technology;School of Physics and Information Engineering;Fuzhou University; Fuzhou 350002;China
Xiao Xiaojing;Ye Yun;Zheng Longwu;and Guo Tailiang Institute of Optoelectronic Display Technology;School of Physics and Information Engineering;Fuzhou University; Fuzhou 350002;China
..............page:26-31
Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors
Fang Yulong;Dun Shaobo;Liu Bo;Yin Jiayun Cai Shujun;and Feng Zhihong Science and Technology on ASIC Laboratory;Hebei Semiconductor Research Institute;Shijiazhuang 050051;China
Fang Yulong;Dun Shaobo;Liu Bo;Yin Jiayun Cai Shujun;and Feng Zhihong Science and Technology on ASIC Laboratory;Hebei Semiconductor Research Institute;Shijiazhuang 050051;China
..............page:53-56
Gate leakage current reduction in IP3 SRAM cells at 45 nm CMOS technology for multimedia applications
R.K.Singh~1;Neeraj Kr.Shukla~2;and Manisha Pattanaik~3 1 Bipin Tripathi Kumaon Institute of Technology;Dwarahat;Almora;India 2 ITM University;Department of EECE;Gurgaon;India 3 ABV-IIITM;VLSI Group;Department of IT;Gwalior.;India
R.K.Singh~1;Neeraj Kr.Shukla~2;and Manisha Pattanaik~3 1 Bipin Tripathi Kumaon Institute of Technology;Dwarahat;Almora;India 2 ITM University;Department of EECE;Gurgaon;India 3 ABV-IIITM;VLSI Group;Department of IT;Gwalior.;India
..............page:88-92
Electron Raman scattering in a cylindrical quantum dot
Zhong Qinghu Yi Xuehuai Department of Physics and Optical Information Sciences;Jiaying University;Meizhou 514015;China
Zhong Qinghu Yi Xuehuai Department of Physics and Optical Information Sciences;Jiaying University;Meizhou 514015;China
..............page:1-5
Simulation of the sensitive region to SEGR in power MOSFETs
Wang Lixin;Lu Jiang;Liu Gang;Wang Chunlin Teng Rui;Han Zhengsheng;and Xia Yang Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Wang Lixin;Lu Jiang;Liu Gang;Wang Chunlin Teng Rui;Han Zhengsheng;and Xia Yang Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:66-69
Correlated electron-hole transitions in wurtzite GaN quantum dots:the effects of strain and hydrostatic pressure
Zheng Dongmei;Wang Zongchi;and Xiao Boqi Department of Physics and Electromechanical Engineering;Sanming College;Sanming 365004;China
Zheng Dongmei;Wang Zongchi;and Xiao Boqi Department of Physics and Electromechanical Engineering;Sanming College;Sanming 365004;China
..............page:6-12
Failure mechanisms and assembly-process-based solution of FCBGA high lead C4 bump non-wetting
Li Wenqi;Qiu Yiming~1;Jin Xing;Wang Lei and Wu Qidi 1 School of Electronics and Information Engineering;Tongji University;Shanghai 200092;China 2 Analog Devices Co.Ltd.;Shanghai 200021;China
Li Wenqi;Qiu Yiming~1;Jin Xing;Wang Lei and Wu Qidi 1 School of Electronics and Information Engineering;Tongji University;Shanghai 200092;China 2 Analog Devices Co.Ltd.;Shanghai 200021;China
..............page:131-136
A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate
Wang Zhongjian Cheng Xinhong;Xia Chao Xu Dawei~2;Cao Duo;Song Zhaorui Yu Yuehui;and Shen Dashen 1 State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Micro-System & Information Technology; Chinese Academy of Sciences;Shanghai 200050;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China 3 Department of Electrical and Computer Engineering;University of Alabama in Huntsville;Huntsville;AL 35899;USA
Wang Zhongjian Cheng Xinhong;Xia Chao Xu Dawei~2;Cao Duo;Song Zhaorui Yu Yuehui;and Shen Dashen 1 State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Micro-System & Information Technology; Chinese Academy of Sciences;Shanghai 200050;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China 3 Department of Electrical and Computer Engineering;University of Alabama in Huntsville;Huntsville;AL 35899;USA
..............page:44-47
A low power flexible PGA for software defined radio systems
Li Guofeng and Wu Nanjian State Key Laboratory of Super Lattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Li Guofeng and Wu Nanjian State Key Laboratory of Super Lattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:120-125
A low-phase-noise LC-VCO with an enhanced-Q varactor for use in a high-sensitivity GNSS receiver
Yin Xizhen~1;Ma Chengyan~;Ye Tianchun Xiao Shimao~1;and Jin Yuhua~2 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Hangzhou Zhongke Microelectronics Co.Ltd;Hangzhou 310053;China
Yin Xizhen~1;Ma Chengyan~;Ye Tianchun Xiao Shimao~1;and Jin Yuhua~2 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Hangzhou Zhongke Microelectronics Co.Ltd;Hangzhou 310053;China
..............page:93-98
Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs
Zhong Yinghui~;Wang Xiantai~2;Su Yongbo;Cao Yuxiong Jin Zhi;Zhang Yuming;and Liu Xinyu 1 Microelectronics Institute;Xidian University;Xi’an 710071;China 2 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Zhong Yinghui~;Wang Xiantai~2;Su Yongbo;Cao Yuxiong Jin Zhi;Zhang Yuming;and Liu Xinyu 1 Microelectronics Institute;Xidian University;Xi’an 710071;China 2 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:61-65
Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency
Guo Hongying~1;Sun Yuanping;Yong-Hoon Cho~2;Eun-Kyung Suh~3; Hai-Joon Lee~3;Rak-Jun Choi~4;and Yoon-Bong Hahn~4 1 Institute of Science and Technology for Opto-Electronic Information;Yantai University;Shandong 264005;China 2 Department of Physics;Korea Advanced Institute of Science and Technology;Daejeon 305-701;Korea 3 School of Semiconductor and Chemical Engineering;Semiconductor Physics Research Center;Chonbuk National University; Chonju 561-756;Korea 4 School of Chemical Engineering;Chonbuk National University;Chonju 561-756;Korea
Guo Hongying~1;Sun Yuanping;Yong-Hoon Cho~2;Eun-Kyung Suh~3; Hai-Joon Lee~3;Rak-Jun Choi~4;and Yoon-Bong Hahn~4 1 Institute of Science and Technology for Opto-Electronic Information;Yantai University;Shandong 264005;China 2 Department of Physics;Korea Advanced Institute of Science and Technology;Daejeon 305-701;Korea 3 School of Semiconductor and Chemical Engineering;Semiconductor Physics Research Center;Chonbuk National University; Chonju 561-756;Korea 4 School of Chemical Engineering;Chonbuk National University;Chonju 561-756;Korea
..............page:13-16
Novel SOI double-gate MOSFET with a P-type buried layer
Yao Guoliang~1;Luo Xiaorong;Wang Qi~1;Jiang Yongheng Wang Pei~1;Zhou Kun;Wu Lijuan~1;Zhang Bo and Li Zhaoji 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China 2 Science and Technology on Analog Integrated Circuit Laboratory;Chongqing 400060;China
Yao Guoliang~1;Luo Xiaorong;Wang Qi~1;Jiang Yongheng Wang Pei~1;Zhou Kun;Wu Lijuan~1;Zhang Bo and Li Zhaoji 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China 2 Science and Technology on Analog Integrated Circuit Laboratory;Chongqing 400060;China
..............page:57-60
A new equivalent circuit model for on-chip spiral transformers in CMOS RFICs
Wei Jiaju;Wang Zhigong;Li Zhiqun;and Tang Lu Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
Wei Jiaju;Wang Zhigong;Li Zhiqun;and Tang Lu Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
..............page:126-130
Effect of magnesium doping on the light-induced hydrophilicity of ZnO thin films
Huang Kai;L Jianguo;Zhang Li;Tang Zhen Yu Jiangying;Li Ping;and Liu Feng 1 Department of Mathematics and Physics;Anhui University of Architecture;Hefei 230601;China 2 Electronics and Information Engineering;Hefei Normal University;Hefei 230601;China 3 Schoolof Mathematics and Physics;Anhui Polytechnic University;Wuhu 241000;China
Huang Kai;L Jianguo;Zhang Li;Tang Zhen Yu Jiangying;Li Ping;and Liu Feng 1 Department of Mathematics and Physics;Anhui University of Architecture;Hefei 230601;China 2 Electronics and Information Engineering;Hefei Normal University;Hefei 230601;China 3 Schoolof Mathematics and Physics;Anhui Polytechnic University;Wuhu 241000;China
..............page:21-25
Nano-WO3 film modified macro-porous silicon（MPS） gas sensor
Sun Peng;Hu Ming Li Mingda;and Ma Shuangyun School of Electronic and Information Engineering;Tianjin University;Tianjin 300072;China
Sun Peng;Hu Ming Li Mingda;and Ma Shuangyun School of Electronic and Information Engineering;Tianjin University;Tianjin 300072;China
..............page:83-87
Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters
Zheng Huaiwen;Zhang Yiyun;Yang Hua;Xue Bin Wu Kui;Li Jing;and Wang Guohong Solid State Lighting Research and Development Centre;Institute of Semiconductors;Chinese Academics of Sciences; Beijing 100083;China
Zheng Huaiwen;Zhang Yiyun;Yang Hua;Xue Bin Wu Kui;Li Jing;and Wang Guohong Solid State Lighting Research and Development Centre;Institute of Semiconductors;Chinese Academics of Sciences; Beijing 100083;China
..............page:70-73
Resistive switching characteristics of Ni/HfO2/Pt ReRAM
Zhang Xiao Institute of Microelectronics;Xi’an Jiaotong University;Xi’an 710049;China
Zhang Xiao Institute of Microelectronics;Xi’an Jiaotong University;Xi’an 710049;China
..............page:80-82
CMOS implementation of a low-power BPSK demodulator for wireless implantable neural command transmission
Wu Zhaohui;Zhang Xu;Liang Zhiming;and Li Bin 1 Institute of Microelectronics;School of Electronic and Information Engineering;South China University of Technology; Guangzhou 510640;China 2 State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Wu Zhaohui;Zhang Xu;Liang Zhiming;and Li Bin 1 Institute of Microelectronics;School of Electronic and Information Engineering;South China University of Technology; Guangzhou 510640;China 2 State Key Laboratory on Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:113-119
Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect
Gourab Dutta~1 and Sukla Basu~2 1 Indian Institute of Technology Kharagpur;West Bengal;India 2 ECE Department;Kalyani Government Engineering College;Kalyani;West Bengal;India
Gourab Dutta~1 and Sukla Basu~2 1 Indian Institute of Technology Kharagpur;West Bengal;India 2 ECE Department;Kalyani Government Engineering College;Kalyani;West Bengal;India
..............page:38-43
Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure
Li Qi Wang Weidong;Zhao Qiuming;and Wei Xueming Guangxi Key Laboratory of Wireless Wideband Communication & Signal Processing;Guilin University of Electronic Technology;Guilin 541004;China
Li Qi Wang Weidong;Zhao Qiuming;and Wei Xueming Guangxi Key Laboratory of Wireless Wideband Communication & Signal Processing;Guilin University of Electronic Technology;Guilin 541004;China
..............page:48-52
GaN based transfer electron and avalanche transit time devices
R.K.Parida~1 and A.K.Panda~2 1 ITER;Siksha ’O’ Anusandhan University;Bhubaneswar;Odisha;751030;India 2 National Institute of Science and Technology;Palur Hills;Berhampur;Odisha;761008;India
R.K.Parida~1 and A.K.Panda~2 1 ITER;Siksha ’O’ Anusandhan University;Bhubaneswar;Odisha;751030;India 2 National Institute of Science and Technology;Palur Hills;Berhampur;Odisha;761008;India
..............page:32-37
A 12-bit,40-Ms/s pipelined ADC with an improved operational amplifier
Wang Yu;Yang Haigang;Yin Tao~1;and Liu Fei 1 Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
Wang Yu;Yang Haigang;Yin Tao~1;and Liu Fei 1 Institute of Electronics;Chinese Academy of Sciences;Beijing 100190;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
..............page:105-112
..............page:3-4