0253-4177
2012 Issue 4
Design of an LED driver based on hysteretic-current-control mode in a 0.6μm BCD process
Liu Lianxi~+;Zhu Zhangming Yang Yintang Institute of Microelectronics;Xidian University;Xi’an 710071;China
Liu Lianxi~+;Zhu Zhangming Yang Yintang Institute of Microelectronics;Xidian University;Xi’an 710071;China
..............page:105-110
Nanoporous characteristics of sol-gel-derived ZnO thin film
Anees A.Ansari~;M.A.M.Khan~1;M.Alhoshan~;S.A.Alrokayan~1;M.S.Alsalhi~1 1 King Abdullah Institute for Nanotechnology;King Saud University;Riyadh-11451;P.O.Box-2454;Saudi Arabia 2 Department of Chemical Engineering;King Saud University;P.O.Box 800;Riyadh 11421;Saudi Arabia
Anees A.Ansari~;M.A.M.Khan~1;M.Alhoshan~;S.A.Alrokayan~1;M.S.Alsalhi~1 1 King Abdullah Institute for Nanotechnology;King Saud University;Riyadh-11451;P.O.Box-2454;Saudi Arabia 2 Department of Chemical Engineering;King Saud University;P.O.Box 800;Riyadh 11421;Saudi Arabia
..............page:7-12
Dependence of transient performance on potential distribution in a static induction thyristor channel
Liu Chunjuan~+;Liu Su Bai Yajie Institute of Microelectronics;School of Physical Science and Technology;Lanzhou University;Lanzhou 730000;China
Liu Chunjuan~+;Liu Su Bai Yajie Institute of Microelectronics;School of Physical Science and Technology;Lanzhou University;Lanzhou 730000;China
..............page:69-74
A low-power high-swing voltage-mode transmitter
Chen Shuai~;Li Hao~;Shi Xiaobing~; Yang Liqiong~;Yang Zongren~;Zhong Shiqiang~; Huang Lingyi~ 1 Institute of Computing Technology;Chinese Academy of Sciences;Beijing 100190;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China 3 Loongson Technologies Corporation Limited;Beijing 100190;China
Chen Shuai~;Li Hao~;Shi Xiaobing~; Yang Liqiong~;Yang Zongren~;Zhong Shiqiang~; Huang Lingyi~ 1 Institute of Computing Technology;Chinese Academy of Sciences;Beijing 100190;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China 3 Loongson Technologies Corporation Limited;Beijing 100190;China
..............page:89-94
A constant loop bandwidth fractional-N frequency synthesizer for GNSS receivers
Yin Xizhen~;Xiao Shimao~1;Jin Yuhua~2;Wu Qiwu~3; Ma Chengyan~;and Ye Tianchun~1 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Hangzhou Zhongke Microelectronics Co.Ltd;Hangzhou 310053;China 3 Department of Communication Engineering;Engineering University of Armed Police Force;Xi’an 710086;China
Yin Xizhen~;Xiao Shimao~1;Jin Yuhua~2;Wu Qiwu~3; Ma Chengyan~;and Ye Tianchun~1 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Hangzhou Zhongke Microelectronics Co.Ltd;Hangzhou 310053;China 3 Department of Communication Engineering;Engineering University of Armed Police Force;Xi’an 710086;China
..............page:117-123
Analysis and implementation of derivative superposition for a power amplifier driver
Li Yilei;Han Kefeng;Yan Na~+;Tan Xi Min Hao ASIC & System State Key Laboratory;Fudan University;Shanghai 201203;China
Li Yilei;Han Kefeng;Yan Na~+;Tan Xi Min Hao ASIC & System State Key Laboratory;Fudan University;Shanghai 201203;China
..............page:81-88
High-temperature(T = 80℃) operation of a 2μm InGaSb-AlGaAsSb quantum well laser
Zhang Yu~;Wang Yongbin~1;Xu Yingqiang~2;Xu Yun~1; Niu Zhichuan Song Guofeng~1 1 Nano-Optoelectronics Laboratory;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 National Laboratory for Superlattice and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Zhang Yu~;Wang Yongbin~1;Xu Yingqiang~2;Xu Yun~1; Niu Zhichuan Song Guofeng~1 1 Nano-Optoelectronics Laboratory;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 National Laboratory for Superlattice and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:57-58
Nanoindentation study of a Cu/Ta/SiO2/Si multilayer system
Zhang Xin Lu Qian~1;Wu Zijing~1;Wu Xiaojing~; Shen Weidian~3;Jiang Bin~4 1 Department of Materials Science;Fudan University;Shanghai 200433;China 2 Micro-Nanoelectronics Platform;Fudan University;Shanghai 200433;China 3 Department of Physics and Astronomy;Eastern Michigan University;Ypsilanti;MI 48197;USA 4 Shanghai Integrated Circuit R&D Center;Shanghai 201203;China
Zhang Xin Lu Qian~1;Wu Zijing~1;Wu Xiaojing~; Shen Weidian~3;Jiang Bin~4 1 Department of Materials Science;Fudan University;Shanghai 200433;China 2 Micro-Nanoelectronics Platform;Fudan University;Shanghai 200433;China 3 Department of Physics and Astronomy;Eastern Michigan University;Ypsilanti;MI 48197;USA 4 Shanghai Integrated Circuit R&D Center;Shanghai 201203;China
..............page:17-22
Application of ZnO nanopillars and nanoflowers to field-emission luminescent tubes
Ye Yun~;Guo Tailiang~;Jiang Yadong~2 1 College of Physics and Information Engineering;Fuzhou University;Fuzhou 350002;China 2 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Ye Yun~;Guo Tailiang~;Jiang Yadong~2 1 College of Physics and Information Engineering;Fuzhou University;Fuzhou 350002;China 2 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:23-27
A new algorithm of inverse lithography technology for mask complexity reduction
Li Yanghuan~+;Shi Zheng;Geng Zhen;Yang Yiwei; and Yan Xiaolang Institute of VLSI Design;Zhejiang University;Hangzhou 310027;China
Li Yanghuan~+;Shi Zheng;Geng Zhen;Yang Yiwei; and Yan Xiaolang Institute of VLSI Design;Zhejiang University;Hangzhou 310027;China
..............page:129-139
Influence of drain and substrate bias on the TID effect for deep submicron technology devices
Huang Huixiang~;Liu Zhangli~;HuZhiyuan~; Zhang Zhengxuan~1;Chen Ming~1;Bi Dawei~1; Zou Shichang~1 1 State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences;Shanghai 200050;China 2Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
Huang Huixiang~;Liu Zhangli~;HuZhiyuan~; Zhang Zhengxuan~1;Chen Ming~1;Bi Dawei~1; Zou Shichang~1 1 State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences;Shanghai 200050;China 2Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
..............page:64-68
Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy
Zhang Guangchen~;Feng Shiwei~1;Li Jingwan~1; Zhao Yan~2;Guo Chunsheng~1 1 School of Electronic Information & Control Engineering;Beijing University of Technology;Beijing 100124;China 2 Institute of Laser Engineering;Beijing University of Technology;Beijing 100124;China
Zhang Guangchen~;Feng Shiwei~1;Li Jingwan~1; Zhao Yan~2;Guo Chunsheng~1 1 School of Electronic Information & Control Engineering;Beijing University of Technology;Beijing 100124;China 2 Institute of Laser Engineering;Beijing University of Technology;Beijing 100124;China
..............page:42-46
An analytical model for the drain-source breakdown voltage of RF LDMOS power transistors with a Faraday shield
Zhang Wenmin~;Zhang Wei~1;Fu Jun~2;Wang Yudong~2 1 School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China 2 Institute of Microelectronics;Tsinghua University;Beijing 100084;China
Zhang Wenmin~;Zhang Wei~1;Fu Jun~2;Wang Yudong~2 1 School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China 2 Institute of Microelectronics;Tsinghua University;Beijing 100084;China
..............page:32-37
An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers
Wang Chenwei~;Liu Yuling~1;Niu Xinhuan~1;Tian Jianying~2; Gao Baohong~1;Zhang Xiaoqiang~1 1 Institute of Microelectronics;Hebei University of Technology;Tianjin 300130;China 2 Market Information Department of CSPC Zhongqi Pharmaceutical Technology Co.;Ltd; Shijiazhuang 050051;China
Wang Chenwei~;Liu Yuling~1;Niu Xinhuan~1;Tian Jianying~2; Gao Baohong~1;Zhang Xiaoqiang~1 1 Institute of Microelectronics;Hebei University of Technology;Tianjin 300130;China 2 Market Information Department of CSPC Zhongqi Pharmaceutical Technology Co.;Ltd; Shijiazhuang 050051;China
..............page:140-143
A novel structure for improving the SEGR of a VDMOS
Tang Zhaohuan~;Hu Gangyi~;Chen Guangbing~1; Tan Kaizhou~1;Liu Yong~2;Luo Jun Xu Xueliang~ 1 Science and Technology on Analog Integrated Circuit Laboratory;Chongqing 400060;China 2 Sichuan Institute of Solid-State Circuits;China Electronics Technology Group Corporation;Chongqing 400060;China
Tang Zhaohuan~;Hu Gangyi~;Chen Guangbing~1; Tan Kaizhou~1;Liu Yong~2;Luo Jun Xu Xueliang~ 1 Science and Technology on Analog Integrated Circuit Laboratory;Chongqing 400060;China 2 Sichuan Institute of Solid-State Circuits;China Electronics Technology Group Corporation;Chongqing 400060;China
..............page:38-41
Influence of absorber doping in a-SiC:H/a-Si:H/a-SiGe:H solar cells
Muhammad Nawaz~ Ashfaq Ahmad~2 1 University Graduate Centre;Gunnar Randers Vei 19;P.O.Box 70;N-2027 Kjeller;Norway 2 COMSATs Institute of Information Technology;Off-Raiwand Road;Lahore-54000;Pakistan
Muhammad Nawaz~ Ashfaq Ahmad~2 1 University Graduate Centre;Gunnar Randers Vei 19;P.O.Box 70;N-2027 Kjeller;Norway 2 COMSATs Institute of Information Technology;Off-Raiwand Road;Lahore-54000;Pakistan
..............page:1-6
A SiGe BiCMOS multi-band tuner for mobile TV applications
Hu Xueqing~;Gong Zheng~1;Zhao Jinxin~1;Wang Lei~2; Yu Peng~2;and Shi Yin~1 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 SuZhou-CAS Semiconductor Integration R&D Center;Suzhou 215000;China
Hu Xueqing~;Gong Zheng~1;Zhao Jinxin~1;Wang Lei~2; Yu Peng~2;and Shi Yin~1 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 SuZhou-CAS Semiconductor Integration R&D Center;Suzhou 215000;China
..............page:75-80
ESD protection design for the gate oxide of an RF-LDMOS
Jiang Yibo~;Du Huan~1;Zeng Chuanbin~1; Han Zhengsheng~1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Jiang Yibo~;Du Huan~1;Zeng Chuanbin~1; Han Zhengsheng~1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:59-63
A 700 V BCD technology platform for high voltage applications
Qiao Ming~+;Jiang Lingli;Zhang Bo Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Qiao Ming~+;Jiang Lingli;Zhang Bo Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:47-50
On-chip frequency compensation with a dual signal path operational transconductance amplifier for a voltage mode control DC/DC converter
Ye Qiang~;Liu Jie~;Yuan Bing~;Lai Xinquan~; Liu Ning~ 1 Institute of Electronic CAD;Xidian University;Xi’an 710071;China 2 Key Laboratory of High-Speed Circuit Design and EMC;Ministry of Education;Xidian University;Xi’an 710071;China
Ye Qiang~;Liu Jie~;Yuan Bing~;Lai Xinquan~; Liu Ning~ 1 Institute of Electronic CAD;Xidian University;Xi’an 710071;China 2 Key Laboratory of High-Speed Circuit Design and EMC;Ministry of Education;Xidian University;Xi’an 710071;China
..............page:111-116
Structural and optical properties of Zn3N2 films prepared by magnetron sputtering in NH3-Ar mixture gases
Wu Jiangyan Yan Jinliang Yue Wei Li Ting School of Physics;Ludong University;Yantai 264025;China
Wu Jiangyan Yan Jinliang Yue Wei Li Ting School of Physics;Ludong University;Yantai 264025;China
..............page:13-16
Low power fast settling multi-standard current reusing CMOS fractional-N frequency synthesizer
Lou Wenfeng;Feng Peng Wang Haiyong Wu Nanjian State Key Laboratory for Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Lou Wenfeng;Feng Peng Wang Haiyong Wu Nanjian State Key Laboratory for Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:95-104
An optimized analog to digital converter for WLAN analog front end
Ye Mao~+;Zhou Yumei;Wu Bin Jiang Jianhua Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Ye Mao~+;Zhou Yumei;Wu Bin Jiang Jianhua Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:124-128
A theoretical model of the femtosecond laser ablation of semiconductors considering inverse bremsstrahlung absorption
LinXiaohui~;Zhang Chibin~1;Ren Weisong~1;Jiang Shuyun~1; Ouyang Quanhui~2 1 School of Mechanical Engineering;Southeast University;Nanjing 211189;China 2 Wuhan Technical College of Communication;Wuhan 430062;China
LinXiaohui~;Zhang Chibin~1;Ren Weisong~1;Jiang Shuyun~1; Ouyang Quanhui~2 1 School of Mechanical Engineering;Southeast University;Nanjing 211189;China 2 Wuhan Technical College of Communication;Wuhan 430062;China
..............page:144-148
Theoretical analysis and concept demonstration of a novel MOEMS accelerometer based on Raman-Nath diffraction
Zhang Zuwei~;Wen Zhiyu~;HuJing~ 1 Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology;Chongqing University; Chongqing 400030;China 2 National Center for International Research of Micro/Nano-System and New Material Technology;Chongqing University; Chongqing 400030;China 3 Microsystem Research Center of Chongqing University;Chongqing 400030;China
Zhang Zuwei~;Wen Zhiyu~;HuJing~ 1 Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology;Chongqing University; Chongqing 400030;China 2 National Center for International Research of Micro/Nano-System and New Material Technology;Chongqing University; Chongqing 400030;China 3 Microsystem Research Center of Chongqing University;Chongqing 400030;China
..............page:51-56
Novel method of separating macroporous arrays from p-type silicon substrate
Peng Bobo~1;Wang Fei~1;Liu Tao~1;Yang Zhenya~1; Wang Lianwei~;Ricky K.Y.Fu~2;Paul K.Chu~2 1 Key Laboratory of Polar Materials and Devices;Ministry of Education;Department of Electronic Engineering;East China Normal University;Shanghai 200241;China 2 Department of Physics and Material Sciences;City University of Hong Kong;Tat Chee Avenue;Kowloon;Hong Kong;China
Peng Bobo~1;Wang Fei~1;Liu Tao~1;Yang Zhenya~1; Wang Lianwei~;Ricky K.Y.Fu~2;Paul K.Chu~2 1 Key Laboratory of Polar Materials and Devices;Ministry of Education;Department of Electronic Engineering;East China Normal University;Shanghai 200241;China 2 Department of Physics and Material Sciences;City University of Hong Kong;Tat Chee Avenue;Kowloon;Hong Kong;China
..............page:28-31