0253-4177
2012 Issue 3
Nickel ohmic contacts of high-concentration P-implanted 4H-SiC
Liu Chunjuan~;Liu Su~1;Feng Jingjing~2;and Wu Rong~2 1 School of Physical Science and Technology;Lanzhou University;Lanzhou 730000;China 2 School of Electronic and Information Engineering;Lanzhou Jiaotong University;Lanzhou 730070;China
Liu Chunjuan~;Liu Su~1;Feng Jingjing~2;and Wu Rong~2 1 School of Physical Science and Technology;Lanzhou University;Lanzhou 730000;China 2 School of Electronic and Information Engineering;Lanzhou Jiaotong University;Lanzhou 730070;China
..............page:118-121
A simulation of doping and trap effects on the spectral response of AlGaN ultraviolet detectors
Sidi Ould Saad Hamady~+ LMOPS;University Paul Verlaine-Metz and SUPELEC-2 Rue Edouard Belin;57070 Metz;France
Sidi Ould Saad Hamady~+ LMOPS;University Paul Verlaine-Metz and SUPELEC-2 Rue Edouard Belin;57070 Metz;France
..............page:20-23
Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation
Li Ye;Jiang Tingting;Sun Qingqing;Wang Pengfei Ding Shijin;and Zhang Wei State Key Laboratory of ASIC and System;Department of Microelectronics;Fudan University;Shanghai 200433;China
Li Ye;Jiang Tingting;Sun Qingqing;Wang Pengfei Ding Shijin;and Zhang Wei State Key Laboratory of ASIC and System;Department of Microelectronics;Fudan University;Shanghai 200433;China
..............page:5-7
A physical surface-potential-based drain current model for polysilicon thin-film transistors
Li Xiyue;Deng Wanling;and Huang Junkai Department of Electronic Engineering;Jinan University;Guangzhou 510632;China
Li Xiyue;Deng Wanling;and Huang Junkai Department of Electronic Engineering;Jinan University;Guangzhou 510632;China
..............page:32-37
A novel high speed lateral IGBT with a self-driven second gate
Hu Hao and Chen Xingbi State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Hu Hao and Chen Xingbi State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:28-31
A single-to-differential low-noise amplifier with low differential output imbalance
DuanLian~;Huang Wei~2;Ma Chengyan~;He Xiaofeng~1; Jin Yuhua~2;and Ye Tianchun~1 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Hangzhou Zhongke Microelectronics Co.;Ltd.;Hangzhou 310053;China
DuanLian~;Huang Wei~2;Ma Chengyan~;He Xiaofeng~1; Jin Yuhua~2;and Ye Tianchun~1 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Hangzhou Zhongke Microelectronics Co.;Ltd.;Hangzhou 310053;China
..............page:60-64
Design of a low noise distributed amplifier with adjustable gain control in 0.15μm GaAs PHEMT
Zhang Ying~+;Wang Zhigong;Xu Jian;and Luo Yin Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
Zhang Ying~+;Wang Zhigong;Xu Jian;and Luo Yin Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
..............page:65-68
AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application
Wang Chong~+;He Yunlong;Zheng Xuefeng;Hao Yue Ma Xiaohua;and Zhang Jincheng Key Laboratory of Wide Band gap Semiconductor Materials and Devices;School of Microelectronics; Xidian University;Xi’an 710071;China
Wang Chong~+;He Yunlong;Zheng Xuefeng;Hao Yue Ma Xiaohua;and Zhang Jincheng Key Laboratory of Wide Band gap Semiconductor Materials and Devices;School of Microelectronics; Xidian University;Xi’an 710071;China
..............page:24-27
Fabrication of a 100%fill-factor silicon microlens array
Yan Jianhua~+;Ou Wen;and Ou Yi Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Yan Jianhua~+;Ou Wen;and Ou Yi Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:48-51
Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation
Wang Jianqiang~+;Gao Hua;Zhang Jian~1;Meng Fanying~2; and Ye Qinghao 1 Shanghai ChaoRi Solar Energy Science & Technology Co.;Ltd;Shanghai 201406;China 2 Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China 3 Department of Physics;Shanghai Jiao Tong University;Shanghai 200240;China
Wang Jianqiang~+;Gao Hua;Zhang Jian~1;Meng Fanying~2; and Ye Qinghao 1 Shanghai ChaoRi Solar Energy Science & Technology Co.;Ltd;Shanghai 201406;China 2 Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China 3 Department of Physics;Shanghai Jiao Tong University;Shanghai 200240;China
..............page:8-14
A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver
Wang Riyan~1;Huang Jiwei~;Li Zhengping~1; Zhang Weifeng~1;and Zeng Longyue~1 1 Guangzhou Runxin Information Technology Co.Ltd;Guangzhou 510663;China 2 College of Physics and Information Engineering;Fuzhou University;Fuzhou 350002;China 3 Institute of RF- & OE IC;Southeast University;Nanjing 210096;China
Wang Riyan~1;Huang Jiwei~;Li Zhengping~1; Zhang Weifeng~1;and Zeng Longyue~1 1 Guangzhou Runxin Information Technology Co.Ltd;Guangzhou 510663;China 2 College of Physics and Information Engineering;Fuzhou University;Fuzhou 350002;China 3 Institute of RF- & OE IC;Southeast University;Nanjing 210096;China
..............page:76-80
Low power digitally controlled oscillator designs with a novel 3-transistor XNOR gate
Manoj Kumar~;Sandeep K.Arya~1;and Sujata Pandey~2 1 Department of Electronics & Communication Engineering;Guru Jambheshwar University of Science & Technology; Hisar;India 2 Amity University;Noida;India
Manoj Kumar~;Sandeep K.Arya~1;and Sujata Pandey~2 1 Department of Electronics & Communication Engineering;Guru Jambheshwar University of Science & Technology; Hisar;India 2 Amity University;Noida;India
..............page:52-59
A fully integrated frequency synthesizer for a dual-mode GPS and Compass receiver
ChuXiaojie~;Lin Min~1;Shi Yin~1;and Dai F F~2 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Department of Electrical & Computer Engineering;Auburn University;Alabama;36849-5201;USA
ChuXiaojie~;Lin Min~1;Shi Yin~1;and Dai F F~2 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Department of Electrical & Computer Engineering;Auburn University;Alabama;36849-5201;USA
..............page:69-75
Holding-voltage drift of a silicon-controlled rectifier with different film thicknesses in silicon-on-insulator technology
Jiang Yibo~1;Zeng Chuanbin~1;Du Huan~1;Luo Jiajun~1; and Han Zhengsheng~ Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Jiang Yibo~1;Zeng Chuanbin~1;Du Huan~1;Luo Jiajun~1; and Han Zhengsheng~ Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:38-41
A feedforward compensation design in critical conduction mode boost power factor correction for low-power low total harmonic distortion
Li Yani~;Yang Yintang~1;Zhu Zhangming~1;and Qiang Wei~2 1 Institute of Microelectronics;Xidian University;Xi’an 710071;China 2 Xi’an Longtium Microelectronics Technology Developing Co.;Ltd;Xi’an 710065;China
Li Yani~;Yang Yintang~1;Zhu Zhangming~1;and Qiang Wei~2 1 Institute of Microelectronics;Xidian University;Xi’an 710071;China 2 Xi’an Longtium Microelectronics Technology Developing Co.;Ltd;Xi’an 710065;China
..............page:87-93
A low-power multi port register file design using a low-swing strategy
Yan Hao~;Liu Yan~1;Hua Siliang~1;Wang Donghui~1; and Hou Chaohuan~1 1 Digital System Integration Laboratory;Institute of Acoustics;Chinese Academy of Sciences;Beijing 100190;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
Yan Hao~;Liu Yan~1;Hua Siliang~1;Wang Donghui~1; and Hou Chaohuan~1 1 Digital System Integration Laboratory;Institute of Acoustics;Chinese Academy of Sciences;Beijing 100190;China 2 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
..............page:101-108
Robust and low power register file in 65 nm technology
Zhang Xingxing~1;Li Yi~1;Xiong Baoyu~1;Han Jun~1; Zhang Yuejun~2;Dong Fangyuan~1;Zhang Zhang~3; YuZhiyi~;Han Jun~1;Cheng Xu~1; and Zeng Xiaoyang~1 1 State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China 2 Institute of Circuits and Systems;Ningbo University;Ningbo 315211;China 3 School of Electronic Science and Applied Physics;Hefei University of Technology;Hefei 230009;China
Zhang Xingxing~1;Li Yi~1;Xiong Baoyu~1;Han Jun~1; Zhang Yuejun~2;Dong Fangyuan~1;Zhang Zhang~3; YuZhiyi~;Han Jun~1;Cheng Xu~1; and Zeng Xiaoyang~1 1 State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China 2 Institute of Circuits and Systems;Ningbo University;Ningbo 315211;China 3 School of Electronic Science and Applied Physics;Hefei University of Technology;Hefei 230009;China
..............page:109-113
Rigorous theoretical derivation of lumped models to transmission line systems
Zhao Jixiang~+ Department of Electronic and Communication Engineering;China Jiliang University;Hangzhou 310018;China
Zhao Jixiang~+ Department of Electronic and Communication Engineering;China Jiliang University;Hangzhou 310018;China
..............page:94-100
Metal gate etch-back planarization technology
Meng Lingkuan~+;Yin Huaxiang~+;Chen Dapeng and Ye Tianchun Key Laboratory of Microelectronics Devices of Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Meng Lingkuan~+;Yin Huaxiang~+;Chen Dapeng and Ye Tianchun Key Laboratory of Microelectronics Devices of Integrated Technology;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:114-117
Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA
Zhang Youwei~;Xu Dawei~2;Wan Li~1;Wang Zhongjian~2; Xia Chao~2;Cheng Xinhong~2;and Yu Yuehui~2 1 Department of Physics;Wenzhou University;Wenzhou 325035;China 2 State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem & Information Technology; Chinese Academy of Sciences;Shanghai 200050;China
Zhang Youwei~;Xu Dawei~2;Wan Li~1;Wang Zhongjian~2; Xia Chao~2;Cheng Xinhong~2;and Yu Yuehui~2 1 Department of Physics;Wenzhou University;Wenzhou 325035;China 2 State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem & Information Technology; Chinese Academy of Sciences;Shanghai 200050;China
..............page:122-124
Quantum mechanical compact modeling of symmetric double-gate MOSFETs using variational approach
P.Vimala~+ and N.B.Balamurugan Department of Electronics and Communication Engineering;Thiagarajar College of Engineering;Madurai-625015;Tamilnadu; India
P.Vimala~+ and N.B.Balamurugan Department of Electronics and Communication Engineering;Thiagarajar College of Engineering;Madurai-625015;Tamilnadu; India
..............page:15-19
Total dose ionizing irradiation effects on a static random access memory field programmable gate array
Gao Bo~;Yu Xuefeng~;Ren Diyuan~;Li Yudong~; Sun Jing~;Cui Jiangwei~;Wang Yiyuan~;and Li Ming~ 1 Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;Urumqi 830011;China 2 Xinjiang Province Key Laboratory of Electronics Information Material and Device;Urumqi 830011;China 3 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
Gao Bo~;Yu Xuefeng~;Ren Diyuan~;Li Yudong~; Sun Jing~;Cui Jiangwei~;Wang Yiyuan~;and Li Ming~ 1 Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;Urumqi 830011;China 2 Xinjiang Province Key Laboratory of Electronics Information Material and Device;Urumqi 830011;China 3 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
..............page:42-47
Review of terahertz semiconductor sources
Feng Wei Department of Physics;Jiangsu University;Zhenjiang 212013;China
Feng Wei Department of Physics;Jiangsu University;Zhenjiang 212013;China
..............page:1-4
The realization of an SVGA OLED-on-silicon microdisplay driving circuit
Zhao Bohua~;Huang Ran~1;Ma Fei~1;Xie Guohua~2; Zhang Zhensong~2;Du Huan~1;Luo Jiajun~1;and Zhao Yi~2 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 National Laboratory of Integrated Optoelectronics;Jilin University;Changchun 130023;China
Zhao Bohua~;Huang Ran~1;Ma Fei~1;Xie Guohua~2; Zhang Zhensong~2;Du Huan~1;Luo Jiajun~1;and Zhao Yi~2 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 National Laboratory of Integrated Optoelectronics;Jilin University;Changchun 130023;China
..............page:81-86