0253-4177
2012 Issue 2
Experimental study of the anode injection efficiency reduction of 3.3-kV-class NPT-IGBTs due to backside processes
Jiang Huaping~;Zhang Bo~1;LiuChuang~2;Chen Wanjun Rao Zugang~2;and Dong Bin~2 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronics Science and Technology of China;Chengdu 610054;China 2Tianjin Zhonghuan Semiconductor Co.Ltd.;Tianjin 300384;China
Jiang Huaping~;Zhang Bo~1;LiuChuang~2;Chen Wanjun Rao Zugang~2;and Dong Bin~2 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronics Science and Technology of China;Chengdu 610054;China 2Tianjin Zhonghuan Semiconductor Co.Ltd.;Tianjin 300384;China
..............page:41-44
Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOI MOSFET
Mei Bo;Bi Jinshun;Li Duoli;Liu Sinan; and Han Zhengsheng Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Mei Bo;Bi Jinshun;Li Duoli;Liu Sinan; and Han Zhengsheng Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:36-40
Capacitance-voltage analysis of a high-k dielectric on silicon
Davinder Rathee~;Sandeep K.Arya~1;and Mukesh Kumar~2 1 Department of Electronics and Communication Engineering;Guru Jambeshwer University of Science and Technology; Hisar;India 2 Department of Electronics Science;Kurukshetra University;Kurukshetra;India
Davinder Rathee~;Sandeep K.Arya~1;and Mukesh Kumar~2 1 Department of Electronics and Communication Engineering;Guru Jambeshwer University of Science and Technology; Hisar;India 2 Department of Electronics Science;Kurukshetra University;Kurukshetra;India
..............page:10-13
A sub-1 V high-precision CMOS bandgap voltage reference
Liao Jun;Zhao Yiqiang~+;and Geng Junfeng School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
Liao Jun;Zhao Yiqiang~+;and Geng Junfeng School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
..............page:138-142
MOS Capacitance-Voltage Characteristics:V.Methods to Enhance the Trapping Capacitance
Jie Binbin~ and Sah Chihtang 1 Department of Physics;Xiamen University;Xiamen 361005;China 2CTSAH Associates;Gainesville;Florida 32605;USA
Jie Binbin~ and Sah Chihtang 1 Department of Physics;Xiamen University;Xiamen 361005;China 2CTSAH Associates;Gainesville;Florida 32605;USA
..............page:1-9
Energy capability enhancement for isolated extended drain NMOS transistors
Nie Weidong~);Wu Jin;Ma Xiaohui~3; and Yu Zongguang 1 School of Information;Jiangnan University;Wuxi 214122;China 2 Wuxi Crystal Source Electronics Co.;Ltd.;Wuxi 214028;China 3 Wuxi Branch of Southeast University;Wuxi 214135;China
Nie Weidong~);Wu Jin;Ma Xiaohui~3; and Yu Zongguang 1 School of Information;Jiangnan University;Wuxi 214122;China 2 Wuxi Crystal Source Electronics Co.;Ltd.;Wuxi 214028;China 3 Wuxi Branch of Southeast University;Wuxi 214135;China
..............page:45-50
An output amplitude configurable wideband automatic gain control with high gain step accuracy
He Xiaofeng~;Mo Taishan~2;Ma Chengyan and Ye Tianchun 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2Hangzhou Zhongke Microelectronics Co;Ltd;Hangzhou 310053;China
He Xiaofeng~;Mo Taishan~2;Ma Chengyan and Ye Tianchun 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2Hangzhou Zhongke Microelectronics Co;Ltd;Hangzhou 310053;China
..............page:111-116
Design for manufacturability of a VDSM standard cell library
Zhou Chong Chen Lan;Zeng Jianping Yin Minghui;and Zhao Jie 1 College of Physics and Microelectronics Science;Hunan University;Changsha 410082;China 2Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Zhou Chong Chen Lan;Zeng Jianping Yin Minghui;and Zhao Jie 1 College of Physics and Microelectronics Science;Hunan University;Changsha 410082;China 2Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:143-148
A 14-bit 80 MS/s CMOS ADC with 84.8 dB SFDR and 72 dB SNDR
Cai Hua;Li Ping~1;Cen Yuanjun~2;and Zhu Zhiyong 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China 2 Chengdu Sino Microelectronics Technology Co.;Ltd.;Chengdu 610041;China
Cai Hua;Li Ping~1;Cen Yuanjun~2;and Zhu Zhiyong 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China 2 Chengdu Sino Microelectronics Technology Co.;Ltd.;Chengdu 610041;China
..............page:127-132
A low-power high-speed driving circuit for spatial light modulators
Zhu Minghao~;Zhu Congyi;Li Wenjiang and Zhang Yaohui 1 Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;Suzhou 215125;China 2Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
Zhu Minghao~;Zhu Congyi;Li Wenjiang and Zhang Yaohui 1 Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;Suzhou 215125;China 2Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
..............page:133-137
Analysis and implementation of an improved recycling folded cascode amplifier
Li Yilei;Han Kefeng;YanNa;Tan Xi;and Min Hao ASIC & System State Key Laboratory;Fudan University;Shanghai 201203;China
Li Yilei;Han Kefeng;YanNa;Tan Xi;and Min Hao ASIC & System State Key Laboratory;Fudan University;Shanghai 201203;China
..............page:64-70
A 65-nm low-noise low-costΣ△modulator for audio applications
Liang Guo;Liao Lu;Luo Hao;Liu Xiaopeng; Han Xiaoxia;and Han Yan Institute of Microelectronics & Photoelectronics;Zhejiang University;Hangzhou 310027;China
Liang Guo;Liao Lu;Luo Hao;Liu Xiaopeng; Han Xiaoxia;and Han Yan Institute of Microelectronics & Photoelectronics;Zhejiang University;Hangzhou 310027;China
..............page:82-86
Distributed feedback quantum cascade lasers operating in continuous-wave mode at λ≈7.6μm
Zhang Jinchuan~;Wang Lijun;Liu Wanfeng Liu Fengqi~1;Zhao Lihua~1;Zhai Shenqiang Liu Junqi~1;and Wang Zhanguo 1 Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China 2 Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
Zhang Jinchuan~;Wang Lijun;Liu Wanfeng Liu Fengqi~1;Zhao Lihua~1;Zhai Shenqiang Liu Junqi~1;and Wang Zhanguo 1 Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China 2 Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
..............page:51-53
S-band low noise amplifier using 1μm InGaAs/InAlAs/InP pHEMT
Z.Hamaizia~;N.Sengouga~1;M.C.E.Yagoub~2;and M.Missous~3 1Laboratory of Materials Semiconductors and Metallic;University of Med Khider;Biskra;07000 Algeria 2RF and Microwave Research Group;School of Electrical Engineering and Computer Science;University of Ottawa; Ottawa ON;KIN 6N5 Canada 3 Microelectronic & Nanostructure Group;School of Electric and Electronic Engineering;University of Manchester;UK
Z.Hamaizia~;N.Sengouga~1;M.C.E.Yagoub~2;and M.Missous~3 1Laboratory of Materials Semiconductors and Metallic;University of Med Khider;Biskra;07000 Algeria 2RF and Microwave Research Group;School of Electrical Engineering and Computer Science;University of Ottawa; Ottawa ON;KIN 6N5 Canada 3 Microelectronic & Nanostructure Group;School of Electric and Electronic Engineering;University of Manchester;UK
..............page:58-63
Digital post-calibration of a 5-bit 1.25 GS/s flash ADC
Yang Yang~+;Zhao Xianli;Zhong Shun’an;and Li Guofeng Department of Information and Electronics;Beijing Institute of Technology;Beijing 100081;China
Yang Yang~+;Zhao Xianli;Zhong Shun’an;and Li Guofeng Department of Information and Electronics;Beijing Institute of Technology;Beijing 100081;China
..............page:122-126
A wide-band low phase noise LC-tuned VCO with constant KVCO/ωosc for LTE PLL
Huang Jiwei~+;Wang Zhigong~2;Li Kuili Li Zhengping and Wang Yongping 1College of Physics and Information Engineering;Fuzhou University;Fuzhou 350002;China 2Institute of RF&OE-IC;Southeast University;Nanjing 210096;China 3Guangzhou Runxin Information Technology Ltd.Co.;Guangzhou 510663;China
Huang Jiwei~+;Wang Zhigong~2;Li Kuili Li Zhengping and Wang Yongping 1College of Physics and Information Engineering;Fuzhou University;Fuzhou 350002;China 2Institute of RF&OE-IC;Southeast University;Nanjing 210096;China 3Guangzhou Runxin Information Technology Ltd.Co.;Guangzhou 510663;China
..............page:106-110
Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell
CuiMin~;Chen Nuofu~;Yang Xiaoli~2;and Zhang Han 1School of Applied Physics and Mathematics;Beijing University of Technology;Beijing 100124;China 2 Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China 3New and Renewable Energy of Beijing Key Laboratory;North China Electric Power University;Beijing 102206;China
CuiMin~;Chen Nuofu~;Yang Xiaoli~2;and Zhang Han 1School of Applied Physics and Mathematics;Beijing University of Technology;Beijing 100124;China 2 Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China 3New and Renewable Energy of Beijing Key Laboratory;North China Electric Power University;Beijing 102206;China
..............page:54-57
Analysis and design of a high-linearity receiver RF front-end with an improved 25%-duty-cycle LO generator for WCDMA/GSM applications
Hu Song;Li Weinan;Huang Yumei~+;and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
Hu Song;Li Weinan;Huang Yumei~+;and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
..............page:96-105
Synthesis and efficient field emission characteristics of patterned ZnO nanowires
Zhang Yongai;Wu Chaoxing;Zheng Yong;and Guo Tailiang College of Physics and Information Engineering;Fuzhou University;Fuzhou 350002;China
Zhang Yongai;Wu Chaoxing;Zheng Yong;and Guo Tailiang College of Physics and Information Engineering;Fuzhou University;Fuzhou 350002;China
..............page:18-22
..............page:154-166
Photoelectric properties of Cu2ZnSnS4 thin films deposited by thermal evaporation
Wu Xinkun;Liu Wei;Cheng Shuying~+;Lai Yunfeng and Jia Hongjie College of Physics and Information Engineering;Institute of Micro-Nano Devices & Solar Cells;Fuzhou University; Fuzhou 350108;China
Wu Xinkun;Liu Wei;Cheng Shuying~+;Lai Yunfeng and Jia Hongjie College of Physics and Information Engineering;Institute of Micro-Nano Devices & Solar Cells;Fuzhou University; Fuzhou 350108;China
..............page:14-17
Highly controllable ICP etching of GaAs based materials for grating fabrication
Qiu Weibin and Wang Jiaxian College of Information Science and Engineering;Huaqiao University;Xiamen Campus;Xiamen 361021;China
Qiu Weibin and Wang Jiaxian College of Information Science and Engineering;Huaqiao University;Xiamen Campus;Xiamen 361021;China
..............page:149-153
SHA-less architecture with enhanced accuracy for pipelined ADC
Zhao Lei~+;Yang Yintang;Zhu Zhangming;and Liu Lianxi School of Microelectronics;Xidian University;Xi’an 710071;China
Zhao Lei~+;Yang Yintang;Zhu Zhangming;and Liu Lianxi School of Microelectronics;Xidian University;Xi’an 710071;China
..............page:117-121
Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs
Rajiv Sharma~1;Sujata Pandey~;and Shail Bala Jain~1 1 Department of Electronics and Communication Engineering;Guru Gobind Singh Indraprastha University;Delhi;India 2Department of Electronics and Communication Engineering;Amity University;Sector-125 Noida;India
Rajiv Sharma~1;Sujata Pandey~;and Shail Bala Jain~1 1 Department of Electronics and Communication Engineering;Guru Gobind Singh Indraprastha University;Delhi;India 2Department of Electronics and Communication Engineering;Amity University;Sector-125 Noida;India
..............page:28-35
A 0.18μm CMOS Gilbert low noise mixer with noise cancellation
Sun Jingye;Huang Lu;Yuan Haiquan;and Lin Fujiang Department of Electronic Science and Technology;University of Science and Technology of China;Hefei 230027;China
Sun Jingye;Huang Lu;Yuan Haiquan;and Lin Fujiang Department of Electronic Science and Technology;University of Science and Technology of China;Hefei 230027;China
..............page:77-81
A monolithic RF transceiver for DC-OFDM UWB
Chen Yunfeng~1;Li Wei;Fu Haipeng~1;Gao Ting Chen Danfeng~1;Zhou Feng~1;Cai Deyun~1;Li Dan Niu Yangyang~1;Zhou Hanchao~1;Zhu Ning~1;Li Ning and Ren Junyan 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Micro-/Nano-Electronics Science and Technology Innovation Platform;Fudan University;Shanghai 201203;China
Chen Yunfeng~1;Li Wei;Fu Haipeng~1;Gao Ting Chen Danfeng~1;Zhou Feng~1;Cai Deyun~1;Li Dan Niu Yangyang~1;Zhou Hanchao~1;Zhu Ning~1;Li Ning and Ren Junyan 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Micro-/Nano-Electronics Science and Technology Innovation Platform;Fudan University;Shanghai 201203;China
..............page:87-95
A binary-weighted 64-dB programmable gain amplifier with a DCOC and AB-class buffer
Ye Xiangyang~;Wang Yunfeng~2;Zhang Haiying and Wang Qingpu 1 School of Physics;Shandong University;Jinan 250100;China 2 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Ye Xiangyang~;Wang Yunfeng~2;Zhang Haiying and Wang Qingpu 1 School of Physics;Shandong University;Jinan 250100;China 2 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:71-76
Analysis of the p~+/p window layer of thin film solar cells by simulation
Lin Aiguo~1;Ding Jianning~ Yuan Ningyi Wang Shubo;Cheng Guanggui~1;and Lu Chao 1Center of Micro/Nano Science & Technology;Jiangsu University;Zhenjiang 212013;China 2Center of Low-Dimension Materials;Micro/Nano Device and System;Changzhou University;Changzhou 213164;China 3 Jiangsu Laboratory for Solar Cell Materials and Technology;Changzhou 213164;China
Lin Aiguo~1;Ding Jianning~ Yuan Ningyi Wang Shubo;Cheng Guanggui~1;and Lu Chao 1Center of Micro/Nano Science & Technology;Jiangsu University;Zhenjiang 212013;China 2Center of Low-Dimension Materials;Micro/Nano Device and System;Changzhou University;Changzhou 213164;China 3 Jiangsu Laboratory for Solar Cell Materials and Technology;Changzhou 213164;China
..............page:23-27