0253-4177
2012 Issue 12
Significantly enhanced transmission achieved with double-layered metallic aperture arrays with sub-skin-depth Ag film
Xiao Gongli and Yang Hongyan 1 School of Information and Communication;Guilin University of Electronic Technology;Guilin 541004;China 2 School of Computer Science and Engineering;Guilin University of Electronic Technology;Guilin 541004;China
Xiao Gongli and Yang Hongyan 1 School of Information and Communication;Guilin University of Electronic Technology;Guilin 541004;China 2 School of Computer Science and Engineering;Guilin University of Electronic Technology;Guilin 541004;China
..............page:1-4
Prediction of semiconducting behavior in minority spin of Co2CrZ（Z=Ga,Ge,As）:LSDA
D.P.Rai and R.K.Thapa Department of Physics;Mizoram University;Aizawl;796004;India
D.P.Rai and R.K.Thapa Department of Physics;Mizoram University;Aizawl;796004;India
..............page:5-10
A high linearity current mode multiplier/divider with a wide dynamic range
Liao Pengfei Luo Ping;Zhang Bo;and Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China.Chengdu 610054;China
Liao Pengfei Luo Ping;Zhang Bo;and Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China.Chengdu 610054;China
..............page:62-65
N~+P photodetector characterization using the quasi-steady state photoconductance decay method
Omeime Xerviar Esebamen Department of Information Technology and Media;Mid Sweden University;Holmgatan 10;SE-851 70;Sundsvall;Sweden
Omeime Xerviar Esebamen Department of Information Technology and Media;Mid Sweden University;Holmgatan 10;SE-851 70;Sundsvall;Sweden
..............page:11-15
A reconfigurable complex band-pass filter with improved passive compensation
Fan Chaojie;Mo Tingting;Chen Dongpo;and Zhou Jianjun Centre of Analog and Radio Frequency Integrated Circuits;Shanghai Jiao Tong University; Shanghai 200240;China
Fan Chaojie;Mo Tingting;Chen Dongpo;and Zhou Jianjun Centre of Analog and Radio Frequency Integrated Circuits;Shanghai Jiao Tong University; Shanghai 200240;China
..............page:66-72
Charge transfer efficiency improvement of a 4-T pixel by the optimization of electrical potential distribution under the transfer gate
Li Yiqiang;Li Binqiao;Xu Jiangtao;Gao Zhiyuan Xu Chao;and Sun Yu School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
Li Yiqiang;Li Binqiao;Xu Jiangtao;Gao Zhiyuan Xu Chao;and Sun Yu School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
..............page:31-36
Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET
Hemant Pardeshi~;Sudhansu Kumar Pati~1;Godwin Raj~1;N Mohankumar~2; and Chandan Kumar Sarkar~1 1 Nano Device Simulation Laboratory;Electronics and Telecommunication Engineering Department;Jadavpur University; Kolkata;India 2 SKP Engineering College;Tiruvannamalai;Tamilnadu;India
Hemant Pardeshi~;Sudhansu Kumar Pati~1;Godwin Raj~1;N Mohankumar~2; and Chandan Kumar Sarkar~1 1 Nano Device Simulation Laboratory;Electronics and Telecommunication Engineering Department;Jadavpur University; Kolkata;India 2 SKP Engineering College;Tiruvannamalai;Tamilnadu;India
..............page:16-22
A novel method to analyze the contact resistance effect on OTFTs
Chen Jinhuo~;Hu Jiaxing~2;and Zhu Yunlong 1 School of Physics & Information Engineering;Fuzhou University;Fuzhou 350108;China 2 School of Materials Science & Engineering;Xi’an Jiaotong University;Xi’an 710049;China
Chen Jinhuo~;Hu Jiaxing~2;and Zhu Yunlong 1 School of Physics & Information Engineering;Fuzhou University;Fuzhou 350108;China 2 School of Materials Science & Engineering;Xi’an Jiaotong University;Xi’an 710049;China
..............page:37-41
Design and analysis of a bang-bang PLL for 6.25 Gbps SerDes
Zhou Mingzhu Institute of Electronic and Information Engineering;Hangzhou Dianzi University;Hangzhou 310018;China
Zhou Mingzhu Institute of Electronic and Information Engineering;Hangzhou Dianzi University;Hangzhou 310018;China
..............page:73-80
High peak-to-valley current ratio In0.53Ga0.47As/AlAs resonant tunneling diode with a high doping emitter
Wang Wei~+;Sun Hao~1;Teng Teng;and Sun Xiaowei 1 Key Laboratory of Terahertz Solid-State Technology;Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences;Shanghai 200050;China 2 University of Chinese Academy of Sciences;Beijing 100039;China
Wang Wei~+;Sun Hao~1;Teng Teng;and Sun Xiaowei 1 Key Laboratory of Terahertz Solid-State Technology;Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences;Shanghai 200050;China 2 University of Chinese Academy of Sciences;Beijing 100039;China
..............page:23-26
Full well capacity and quantum efficiency optimization for small size backside illuminated CMOS image pixels with a new photodiode structure
Sun Yu;Zhang Ping;Xu Jiangtao Gao Zhiyuan and Xu Chao School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
Sun Yu;Zhang Ping;Xu Jiangtao Gao Zhiyuan and Xu Chao School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
..............page:42-48
Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs
Jin Xiaoshi~+;Liu Xi~1;Wu Meile Chuai Rongyan Jung-Hee Lee~2;and Jong-Ho Lee~3 1 School of Information Science and Engineering;Shenyang University of Technology;Shenyang 110870;China 2 School of EECS;Kyungpook National University;1370 Sangyuk-Dong Buk-Gu.Daegu 702-701;Korea 3 School of EECS Eng.and ISRC;Seoul National University;Shinlim-Dong; Kwanak-Gu;Seoul 151-742;Korea
Jin Xiaoshi~+;Liu Xi~1;Wu Meile Chuai Rongyan Jung-Hee Lee~2;and Jong-Ho Lee~3 1 School of Information Science and Engineering;Shenyang University of Technology;Shenyang 110870;China 2 School of EECS;Kyungpook National University;1370 Sangyuk-Dong Buk-Gu.Daegu 702-701;Korea 3 School of EECS Eng.and ISRC;Seoul National University;Shinlim-Dong; Kwanak-Gu;Seoul 151-742;Korea
..............page:27-30
An empirical formula for yield estimation from singly truncated performance data of qualified semiconductor devices
Liang Tao and Jia Xinzhang Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics; Xidian University;Xi’an 710071;China
Liang Tao and Jia Xinzhang Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics; Xidian University;Xi’an 710071;China
..............page:93-99
A RF receiver frontend for SC-UWB in a 0.18-μm CMOS process
Guo Rui~+ and Zhang Haiying 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Shenyang Zhongke Microelectronics Co.;Ltd;Shenyang 110179;China
Guo Rui~+ and Zhang Haiying 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Shenyang Zhongke Microelectronics Co.;Ltd;Shenyang 110179;China
..............page:49-55
A pixel circuit with reduced switching leakage for an organic light-emitting diode
Wang Huan;Wang Zhigong;Feng Jun;Li Wenyuan Wang Rong and Miao Peng Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
Wang Huan;Wang Zhigong;Feng Jun;Li Wenyuan Wang Rong and Miao Peng Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
..............page:81-85
A 72-dB-SNDR rail-to-rail successive approximation ADC using mismatch calibration techniques
Liu Yan;Hua Siliang;Wang Donghui;and Hou Chaohuan Institute of Acoustics;Chinese Academy of Sciences;Beijing 100190;China
Liu Yan;Hua Siliang;Wang Donghui;and Hou Chaohuan Institute of Acoustics;Chinese Academy of Sciences;Beijing 100190;China
..............page:100-105
A digital prediction algorithm for a single-phase boost PFC
Wang Qing;Chen Ning;Sun Weifeng;Lu Shengli and Shi Longxing National ASIC System Engineering Research Center;Southeast University;Nanjing 210096;China
Wang Qing;Chen Ning;Sun Weifeng;Lu Shengli and Shi Longxing National ASIC System Engineering Research Center;Southeast University;Nanjing 210096;China
..............page:86-92
A digitally controlled power amplifier with neutralization capacitors for ZigbeeTM applications
Jia Fei;Diao Shengxi;Zhang Xuejuan;Fu Zhongqian and Lin Fujiang Department of Electronic Science and Technology;University of Science and Technology of China;Hefei 230027;China
Jia Fei;Diao Shengxi;Zhang Xuejuan;Fu Zhongqian and Lin Fujiang Department of Electronic Science and Technology;University of Science and Technology of China;Hefei 230027;China
..............page:56-61
A process/temperature variation tolerant RSSI
Lei Qianqian~;Lin Min;and Shi Yin 1 Department of Physics;Xi’an Polytechnic University;Xi’an 710048;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China
Lei Qianqian~;Lin Min;and Shi Yin 1 Department of Physics;Xi’an Polytechnic University;Xi’an 710048;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China
..............page:106-111
A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique
Yang Geliang;Wang Zhigong;Li Zhiqun;Li Qin Li Zhu;and Liu Faen Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
Yang Geliang;Wang Zhigong;Li Zhiqun;Li Qin Li Zhu;and Liu Faen Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
..............page:112-117
..............page:118-131
..............page:132-148
..............page:149-150