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Chinese Journal of Semiconductors
0253-4177
2012 Issue 11
Design and implementation of an ultra-low power passive UHF RFID tag
Shen Jinpeng;Wang Xin’an;Liu Shan Zong Hongqiang Huang Jinfeng;Yang Xin;Feng Xiaoxing;and Ge Binjie Key Laboratory of Integrated Microsystems;Peking University Shenzhen Graduate School;Shenzhen 518055;China
..............page:115-120
The chemisorption of Mg on the Si(100)-(2×1) surface
Zhang Fang;Li Wei;and Wei Shuyi 1 College of Electronic & Information Engineering;Pingdingshan University;Pingdingshan 467000;China 2 Department of Mathematics and Physics;Henan University of Urban Construction;Pingdingshan 467036;China 3 College of Physics and Information Engineering;Henan Normal University;Xinxiang 453007;China
..............page:6-9
CMOS analog baseband circuitry for an IEEE 802.11 b/g/n WLAN transceiver
Gong Zheng~+;Chu Xiaojie Lei Qianqian Lin Min;and Shi Yin 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Suzhou-CAS Semiconductors Integrated-Technology Research Center;Suzhou 215021;China
..............page:60-66
Design of ternary low-power Domino JKL flip-flop and its application
Wang Pengjun;Yang Qiankun;and Zheng Xuesong Institute of Circuits and Systems;Ningbo University;Ningbo 315211;China
..............page:100-104
Preparation of rare-earth element doped Mg2Si by FAPAS
Wang Liqi;Meng Qingsen;and Fan Wenhao 1 Department of Mechanical Engineering;Anhui Vocational College of Defense Technology;Lu’an 237011;China 2 Department of Material Science and Engineering;Taiyuan University of Technology;Taiyuan 030024;China
..............page:32-36
Characterization of electrical properties of AlGaN/GaN interface using coupled Schrodinger and Poisson equation
S.Das;A.K.Panda;and G.N.Dash~+ National Institute of Science and Technology;Palur Hills;Berhampur;Odisha;761008;India
..............page:16-23
Pulse swallowing frequency divider with low power and compact structure
Gao Haijun~+;Sun Lingling;Cai Chaobo;and Zhan Haiting Key Laboratory of RF Circuits and Systems;Ministry of Education;Hangzhou Dianzi University;Hangzhou 310018;China
..............page:79-82
Low threading dislocation density in GaN films grown on patterned sapphire substrates
Liang Meng~+;Wang Guohong;Li Hongjian;Li Zhicong Yao Ran;Wang Bing;Li Panpan;Li Jing;Yi Xiaoyan Wang Junxi;and Li Jinmin Semiconductor Lighting R & D Center;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:24-27
A simulation study on a novel trench SJ IGBT
Wang Bo;Tan Jingfei;Zhang Wenliang;Chu Weili and Zhu Yangjun Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:43-47
Preparation and properties of polycrystalline silicon seed layers on graphite substrate
Li Ning;Chen Nuofu~;Bai Yiming;and He Haiyang 1 State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources;School of Renewable Energy Engineering;North China Electric Power University;Beijing 102206;China 2 State Key Laboratory of Silicon Materials;Zhejiang University;Hangzhou 310027;China
..............page:28-31
Switched-capacitor multiply-by-two amplifier with reduced capacitor mismatches sensitivity and full swing sample signal common-mode voltage
Xu Xinnan;Yao Suying;Xu Jiangtao~+;and Nie Kaiming School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
..............page:72-78
A digital background calibration algorithm of a pipeline ADC based on output code calculation
Shao Jianjian~+;Li Weitao;Sun Cao;Li Fule Zhang Chun;and Wang Zhihua Institute of Microelectronics;Tsinghua University;Beijing 100084;China
..............page:110-114
12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator
Chen Hongtao;Ding Jianfeng;and Yang Lin State Key Laboratory on Integrated Optoelectronics & Optoelectronic System Laboratory;Institute of Semiconductors; Chinese Academy of Sciences;Beijing 100083;China
..............page:57-59
Design of a dual-channel multi-mode GNSS receiver with a∑△fractional-N synthesizer
Long Qiang~;Zhuang Yiqi~1;Yin Yue~1;Li Le~2;Wang Jin Li Zhenrong Liu Qiankun;and Wang Lei 1 National Key Laboratory of Wide Band-Gap Semiconductor Technology;School of Microelectronics;Xi’dian University; Xi’an 710071;China 2 China Key System;CETC;Wuxi 214072;China
..............page:83-89
Fabrication of SiC nanowire thin-film transistors using dielectrophoresis
Dai Zhenqing;Zhang Liying~1;Chen Changxin Qian Bingjian~1;Xu Dong~1;Chen Haiyan Wei Liangming~1;and Zhang Yafei 1 Key Laboratory for Thin Film and Microfabrication of the Ministry of Education;Research Institute of Micro and Nano Science and Technology;Shanghai Jiao Tong University;Shanghai 200240;China 2 Department of Physics and Chemistry;Hebei Normal University of Science and Technology;Qinhuangdao 066004;China
..............page:37-42
Compositional dependence of Raman frequencies in SixGe1-x alloys
Zheng Wenli~2 and Li Tinghui 1 College of Electronic Engineering;Guangxi Normal University;Guilin 541004;China 2 Department of Physics;Chengde Teacher’s College for Nationalities;Chengde 067000;China
..............page:1-5
Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP
Wang Chenwei~+;Liu Yuling;Tian Jianying;Niu Xinhuan Zheng Weiyan and Yue Hongwei 1 Institute of Microelectronics;Hebei University of Technology;Tianjin 300130;China 2 Market Information Department of CSPC Zhongqi Pharmaceutical Technology Co.;Ltd; Shijiazhuang 050051;China
..............page:134-138
A SPICE model for a phase-change memory cell based on the analytical conductivity model
Wei Yiqun;Lin Xinnan~+;Jia Yuchao;Cui Xiaole He Jin and Zhang Xing 1 The Key Laboratory of Integrated Microsystems;Shenzhen Graduate School of Peking University;Shenzhen 518055;China 2 Peking University Shenzhen SOC Key Laboratory;PKU-HKUST;Shenzhen-Hong Kong Institute;Shenzhen 518055;China 3 Key Laboratory of Microelectronic Devices and Circuits;Institute of Microelectronics;School of Electronics and Computer Science;Peking University;Beijing 100871;China
..............page:52-56
Acetic acid gas sensors based on Ni2+ doped ZnO nanorods prepared by using the solvothermal method
Cheng Zhiming;Zhou Sumei Chen Tongyun Dong Yongping;Zhang Wangbing and Chu Xiangfeng 1 Department of Chemistry;School of Science;Beijing Jiaotong University;Beijing 100044;China 2 School of Chemistry and Chemical Engineering;Anhui University of Technology;Maanshan 243002;China
..............page:10-15
A 1.8 V low-power 14-bit 20 Msps ADC with 11.2 ENOB
Cai Hua State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:126-133
A new short-anoded IGBT with high emission efficiency
Chen Weizhong;Zhang Bo Li Zehong;Ren Min and Li Zhaoji State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:48-51
An embeddable SOC real-time prediction technology for TDDB
Xin Weiping~+;Zhuang Yiqi;and Li Xiaoming School of Microelectronics;Xidian University;Xi’an 710071;China
..............page:105-109
Millimeter-wave fixed-tuned subharmonic mixers with planar Schottky diodes
Yao Changfei~+;Zhou Ming;Luo Yunsheng Wang Yigang and Xu Conghai 1 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute; Nanjing 210016;China 2 Department of Microwave and Millimeter Wave Modules;Nanjing Electronic Devices Institute;Nanjing 210016;China
..............page:95-99
A micro-power LDO with piecewise voltage foldback current limit protection
Wei Hailong~+;Liu Youbao;Guo Zhongjie;and Liao Xue Xi’an Microelectronic Technology Institute;Xi’an 710054;China
..............page:121-125
A programmable gain amplifier with digitally assisted DC offset calibration for a direct-conversion WLAN receiver
Yao Xiaocheng~+;Gong Zheng;and Shi Yin 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Suzhou-CAS Semiconductors Integrated-Technology Research Center;Suzhou 215021;China
..............page:90-94
Design of low noise class D amplifiers using an integrated filter
Wang Haishi and Zhang Bo State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 611731;China
..............page:67-71