0253-4177
2012 Issue 1
Effect of rhenium doping on various physical properties of single crystals of MoSe2
Mihir M.Vora~1 and Aditya M.Vora~ 1 Parmeshwari 165;Vijaynagar Area;Hospital Road;Bhuj-Kutch;370001;Gujarat;India 2 Humanities and Social Science Department;S.T.B.S.College of Diploma Engineering;Shri Swami Atmanand Sarswati Vidya Sankul;Opp.Kapodra Police Station;Varachha Road;Surat 395 006;Gujarat;India
Mihir M.Vora~1 and Aditya M.Vora~ 1 Parmeshwari 165;Vijaynagar Area;Hospital Road;Bhuj-Kutch;370001;Gujarat;India 2 Humanities and Social Science Department;S.T.B.S.College of Diploma Engineering;Shri Swami Atmanand Sarswati Vidya Sankul;Opp.Kapodra Police Station;Varachha Road;Surat 395 006;Gujarat;India
..............page:20-24
A wideband LNA employing gate-inductive-peaking and noise-canceling techniques in 0.18μm CMOS
Bao Kuan;Fan Xiangning;Li Wei;Zhang Li Wang Zhigong Institute ot’RF- & OE-ICs;Southeast University;Nanjing 210096.China
Bao Kuan;Fan Xiangning;Li Wei;Zhang Li Wang Zhigong Institute ot’RF- & OE-ICs;Southeast University;Nanjing 210096.China
..............page:93-100
Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2O3 films
Li Ting;Yan Jinliang~+;Ding Xingwei;and Zhang Liying School of Physics;Ludong University;Yantai 264025;China
Li Ting;Yan Jinliang~+;Ding Xingwei;and Zhang Liying School of Physics;Ludong University;Yantai 264025;China
..............page:32-36
A 18-mW,20-MHz bandwidth,12-bit continuous-time∑△modulator using a power-efficient multi-stage amplifier
Li Ran;Li Jing;Yi Ting Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
Li Ran;Li Jing;Yi Ting Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
..............page:120-126
A Ku band internally matched high power GaN HEMT amplifier with over 30%of PAE
Ge Qin Chen Xiaojuan;Luo Weijun;Yuan Tingting Pu Yan1 Liu Xinyu Key Laboratory of Microwave Devices & Integrated Circuits.Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
Ge Qin Chen Xiaojuan;Luo Weijun;Yuan Tingting Pu Yan1 Liu Xinyu Key Laboratory of Microwave Devices & Integrated Circuits.Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
..............page:52-55
High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax=256 GHz and BVCEO= 8.3 V
Cheng Wei;Zhao Yan;Gao Hanchao;Chen Chen and Yang Naibin Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute; Nanjing 210016;China
Cheng Wei;Zhao Yan;Gao Hanchao;Chen Chen and Yang Naibin Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute; Nanjing 210016;China
..............page:56-58
A high-performance MUX-direct digital frequency synthesizer with quarter ROMs
Hao Zhikun~;Zhang Qiang;NiWeining~1;and Shi Yin 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Department of Electronic Engineering.Tsinghua University;Beijing 100084;China
Hao Zhikun~;Zhang Qiang;NiWeining~1;and Shi Yin 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Department of Electronic Engineering.Tsinghua University;Beijing 100084;China
..............page:127-130
Improved spectral characteristics of 980 nm broad area slotted Fabry-Perot diode lasers
Gao Zhuo;Wang Jun;Xiong Cong;Liu Yuanyuan Liu Suping;and Ma Xiaoyu Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Gao Zhuo;Wang Jun;Xiong Cong;Liu Yuanyuan Liu Suping;and Ma Xiaoyu Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:68-71
Continuous analyticⅠ-Ⅴmodel for GS DG MOSFETs including hot-carrier degradation effects
Toufik Bentrcia~1;Faycal Djeffal~;and Abdel Hamid Benhaya~2 1 Department of Physics;University of Batna;Batna 05000;Algeria 2 LEA;Department of Electronics.University of Batna.Batna 05000;Algeria
Toufik Bentrcia~1;Faycal Djeffal~;and Abdel Hamid Benhaya~2 1 Department of Physics;University of Batna;Batna 05000;Algeria 2 LEA;Department of Electronics.University of Batna.Batna 05000;Algeria
..............page:41-46
SEE characteristics of small feature size devices by using laser backside testing
Feng Guoqiang~+;Shangguan Shipeng;Ma Yingqi; and Han Jianwei Center for Space Science and Applied Research;Chinese Academy of Sciences;Beijing 100190;China
Feng Guoqiang~+;Shangguan Shipeng;Ma Yingqi; and Han Jianwei Center for Space Science and Applied Research;Chinese Academy of Sciences;Beijing 100190;China
..............page:72-76
First principle study of the electronic structure of hafnium-doped anatase TiO2
Li Lezhong~+;Yang Weiqing;Ding Yingchun and Zhu Xinghua Department of Optics and Electronics;Chengdu University of Information Technology;Chengdu 610225;China
Li Lezhong~+;Yang Weiqing;Ding Yingchun and Zhu Xinghua Department of Optics and Electronics;Chengdu University of Information Technology;Chengdu 610225;China
..............page:25-28
Influence of doping position on the extinction ratio of Mach-Zehnder-interference based silicon optical modulators
Zhao Yong;Wang Wanjun;Shao Haifeng;Yang Jianyi; Wang Minghua;and Jiang Xiaoqing Department of Information Science and Electronics Engineering;Zhejiang University;Hangzhou 310027;China
Zhao Yong;Wang Wanjun;Shao Haifeng;Yang Jianyi; Wang Minghua;and Jiang Xiaoqing Department of Information Science and Electronics Engineering;Zhejiang University;Hangzhou 310027;China
..............page:77-79
A 3 to 5 GHz low-phase-noise fractional-N frequency synthesizer with adaptive frequency calibration for GSM/PCS/DCS/WCDMA transceivers
Pan Yaohua~+;Mei Niansong;Chen Hu;Huang Yumei; and Hong Zhiliang State Key Laboratory of ASIC & Systems;Fudan University;Shanghai 201203;China
Pan Yaohua~+;Mei Niansong;Chen Hu;Huang Yumei; and Hong Zhiliang State Key Laboratory of ASIC & Systems;Fudan University;Shanghai 201203;China
..............page:80-85
Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs
Cui Jiangwei~;Xue Yaoguo~4;Yu Xuefeng~; Ren Diyuan~2;LuJian~;and Zhang Xingyao~ 1 Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences.Urumqi 830011;China 2 Xinjiang Key Laboratory of Electric Information Materials and Devices;Urumuqi 830011;China 3 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China 4 Xi’an Microelectronic Technology Institute;Xi’an 710055;China
Cui Jiangwei~;Xue Yaoguo~4;Yu Xuefeng~; Ren Diyuan~2;LuJian~;and Zhang Xingyao~ 1 Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences.Urumqi 830011;China 2 Xinjiang Key Laboratory of Electric Information Materials and Devices;Urumuqi 830011;China 3 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China 4 Xi’an Microelectronic Technology Institute;Xi’an 710055;China
..............page:64-67
A high dynamic range linear RF power detector with a preceding LNA
Dai Yingbo;Han Kefeng;Yan Na~+;Tan Xi State Key Laboratory of ASIC & System;Fudan University.Shanghai 201203.China
Dai Yingbo;Han Kefeng;Yan Na~+;Tan Xi State Key Laboratory of ASIC & System;Fudan University.Shanghai 201203.China
..............page:107-113
MOS Capacitance-Voltage Characteristics:Ⅳ.Trapping Capacitance from 3-Charge-State Impurities
Jie Binbin~ and Sah Chihtang~ 1 Department of Physics.Xiamen University;Xiamen 361005;China 2 CTSAH Associates;Gainesville;Florida 32605;USA
Jie Binbin~ and Sah Chihtang~ 1 Department of Physics.Xiamen University;Xiamen 361005;China 2 CTSAH Associates;Gainesville;Florida 32605;USA
..............page:1-19
Aluminum/MoO3 anode thin films:an effective anode structure for high-performance flexible organic optoelectronics
Ding Lei~;Zhang Fanghui~2;Ma Ying~1;and Zhang Maili 1 School of Electrical and Information Engineering;Shaanxi University of Science & Technology;Xi’an 710021;China 2 Shaanxi Panel Display Engineering Center.Xi’an 710021;China
Ding Lei~;Zhang Fanghui~2;Ma Ying~1;and Zhang Maili 1 School of Electrical and Information Engineering;Shaanxi University of Science & Technology;Xi’an 710021;China 2 Shaanxi Panel Display Engineering Center.Xi’an 710021;China
..............page:37-40
Direct extraction of equivalent circuit parameters for on-chip spiral transformers
Wei Jiaju;Wang Zhigong~+ Li Zhiqun Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
Wei Jiaju;Wang Zhigong~+ Li Zhiqun Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
..............page:149-154
An IO block array in a radiation-hardened SOI SRAM-based FPGA
Zhao Yan~+;Wu Lihua;Han Xiaowei;Li Yan Zhang Qianli;Chen Liang;Zhang Guoquan;Li Jianzhong; Yang Bo;Gao Jiantou;Wang Jian;Li Ming;Liu Guizhai Zhang Feng;Guo Xufeng;Zhao Kai;Stanley L.Chen Yu Fang;and Liu Zhongli Institute of Semiconductors.Chinese Academy of Sciences;Beijing 100083.China
Zhao Yan~+;Wu Lihua;Han Xiaowei;Li Yan Zhang Qianli;Chen Liang;Zhang Guoquan;Li Jianzhong; Yang Bo;Gao Jiantou;Wang Jian;Li Ming;Liu Guizhai Zhang Feng;Guo Xufeng;Zhao Kai;Stanley L.Chen Yu Fang;and Liu Zhongli Institute of Semiconductors.Chinese Academy of Sciences;Beijing 100083.China
..............page:137-143
Impact of parasitic resistance on the ESD robustness of high-voltage devices
Lin Lijuan~+;Jiang Lingli;Fan Hang;and Zhang Bo State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology; Chengdu 610054;China
Lin Lijuan~+;Jiang Lingli;Fan Hang;and Zhang Bo State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology; Chengdu 610054;China
..............page:59-63
Characteristics of AlGaN/GaN/AlGaN double heteroj unction HEMTs with an improved breakdown voltage
Ma Juncai~+;Zhang Jincheng;Xue Junshuai;Lin Zhiyu Liu Ziyang;Xue Xiaoyong;Ma Xiaohua;Hao Yue Key Laboratory of Wide Band Gap Semiconductor Materials and Devices.School of Microelectronics.Xidian University; Xi’an 710071;China
Ma Juncai~+;Zhang Jincheng;Xue Junshuai;Lin Zhiyu Liu Ziyang;Xue Xiaoyong;Ma Xiaohua;Hao Yue Key Laboratory of Wide Band Gap Semiconductor Materials and Devices.School of Microelectronics.Xidian University; Xi’an 710071;China
..............page:47-51
A 0.8-3 GHz RF-VGA with 35 dB dynamic range in 0.13μm CMOS
Qin Xi;Huang Xingli;Qin Yajie;and Hong Zhiliang State Key Laboratory of ASIC and System.Fudan University;Shanghai 201203;China
Qin Xi;Huang Xingli;Qin Yajie;and Hong Zhiliang State Key Laboratory of ASIC and System.Fudan University;Shanghai 201203;China
..............page:131-136
Ferromagnetism in Fe-doped CuO nanopowder
Zhao Jing~;Xia Qinglin~2;and Li Jinmin 1 Semiconductor Lighting Research and Development Center.Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China 2 School of Physics and Electronics;Central South University;Changsha 410083;China
Zhao Jing~;Xia Qinglin~2;and Li Jinmin 1 Semiconductor Lighting Research and Development Center.Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China 2 School of Physics and Electronics;Central South University;Changsha 410083;China
..............page:29-31
An offset cancellation technique in a switched-capacitor comparator for SAR ADCs
Tong Xingyuan~;Zhu Zhangming~2;and Yang Yintang 1 School of Electronic Engineering;Xi’an University of Posts & Telecommunications;Xi’an 710121;China 2 Institute of Microelectronics;Xidian University;Xi’an 710071;China
Tong Xingyuan~;Zhu Zhangming~2;and Yang Yintang 1 School of Electronic Engineering;Xi’an University of Posts & Telecommunications;Xi’an 710121;China 2 Institute of Microelectronics;Xidian University;Xi’an 710071;China
..............page:144-148
High performance power-configurable preamplifier in a high-density parallel optical receiver
Wang Xiaoxia Wang Zhigong Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
Wang Xiaoxia Wang Zhigong Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
..............page:101-106
A 1500 mA,10 MHz on-time controlled buck converter with ripple compensation and efficiency optimization
Yu Jiale;L~ Danzhu;Hong Zhiliang State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
Yu Jiale;L~ Danzhu;Hong Zhiliang State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
..............page:86-92
Design of a 0.5 V CMOS cascode low noise amplifier for multi-gigahertz applications
Liu Baohong~;Zhou Jianjun Mao Junfa 1 Center for Microwave and RF Technologies;Shanghai Jiao Tong University;Shanghai 200240;China 2 Center for Analog/RF Integrated Circuits;Shanghai Jiao Tong University;Shanghai 200240;China
Liu Baohong~;Zhou Jianjun Mao Junfa 1 Center for Microwave and RF Technologies;Shanghai Jiao Tong University;Shanghai 200240;China 2 Center for Analog/RF Integrated Circuits;Shanghai Jiao Tong University;Shanghai 200240;China
..............page:114-119