0253-4177
2011 Issue 8
Two different LNA optimizing techniques
Qin Chuan;Chen Lan;and Wu Yuping Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Qin Chuan;Chen Lan;and Wu Yuping Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:146-154
Regular FPGA based on regular fabric
Chen Xun;Zhu Jianwen;and Zhang Minxuan 1 School of Computer;National University of Defense Technology;Changsha 410073;China 2 Department of Electrical and Computer Engineering;University of Toronto;Toronto;ON;M5S3G4;Canada
Chen Xun;Zhu Jianwen;and Zhang Minxuan 1 School of Computer;National University of Defense Technology;Changsha 410073;China 2 Department of Electrical and Computer Engineering;University of Toronto;Toronto;ON;M5S3G4;Canada
..............page:155-162
A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs
Wang Honglai;Zhang Xiaoxing;Dai Yujie;L Yingjie Toshimasa Matsuoka~2;Wang Jun~2;and Kenji Taniguchi~2 1 Institute of Microelectronics;Nankai University;Tianjin 300457;China 2 Department of Electrical;Electronic and Information Engineering;Osaka University;2-1 Yamadaoka;Suita; Osaka;565-0871;Japan
Wang Honglai;Zhang Xiaoxing;Dai Yujie;L Yingjie Toshimasa Matsuoka~2;Wang Jun~2;and Kenji Taniguchi~2 1 Institute of Microelectronics;Nankai University;Tianjin 300457;China 2 Department of Electrical;Electronic and Information Engineering;Osaka University;2-1 Yamadaoka;Suita; Osaka;565-0871;Japan
..............page:118-121
Effect of a magnetic field on the energy levels of donor impurities in the ZnO parabolic quantum well
Yuan Lihua Wang Daobin Chen Yuhong;Zhang Cairong Pu Zhongsheng;and Zhang Haimin School of Science;Lanzhou University of Technology;Lanzhou 730050;China
Yuan Lihua Wang Daobin Chen Yuhong;Zhang Cairong Pu Zhongsheng;and Zhang Haimin School of Science;Lanzhou University of Technology;Lanzhou 730050;China
..............page:1,3-4
GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy
Zhu Yan;Li Mifeng;He Jifang;Yu Ying;Ni Haiqiao Xu Yingqiang Wang Juan;He Zhenhong;and Niu Zhichuan State Key Laboratory for Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Zhu Yan;Li Mifeng;He Jifang;Yu Ying;Ni Haiqiao Xu Yingqiang Wang Juan;He Zhenhong;and Niu Zhichuan State Key Laboratory for Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:10-13
Simulation of electrical properties of InxAl1-xN/AlN/GaN high electron mobility transistor structure
Bi Yang;Wang Xiaoliang~;Xiao Hongling~; Wang Cuimei~;Yang Cuibai~;Peng Enchao~1; Lin Defeng~1;Feng Chun~;and Jiang Lijuan~ 1 Materials Science Center;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Bi Yang;Wang Xiaoliang~;Xiao Hongling~; Wang Cuimei~;Yang Cuibai~;Peng Enchao~1; Lin Defeng~1;Feng Chun~;and Jiang Lijuan~ 1 Materials Science Center;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:18-22
Design and implementation of a programming circuit in radiation-hardened FPGA
Wu Lihua;Han Xiaowei Zhao Yan;Liu Zhongli Yu Fang and Stanley L.Chen Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Wu Lihua;Han Xiaowei Zhao Yan;Liu Zhongli Yu Fang and Stanley L.Chen Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:132-137
A novel low-offset dynamic comparator for sub-1-V pipeline ADCs
Yang Jinda;Wang Xianbiao;Li Li Cheng Xu Guo Yawei;and Zeng Xiaoyang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
Yang Jinda;Wang Xianbiao;Li Li Cheng Xu Guo Yawei;and Zeng Xiaoyang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
..............page:93-97
A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier
Ge Qin;Chen Xiaojuan;Luo Weijun;Yuan Tingting Pang Lei;and Liu Xinyu Key Laboratory of Microwave Devices & Integrated Circuit;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
Ge Qin;Chen Xiaojuan;Luo Weijun;Yuan Tingting Pang Lei;and Liu Xinyu Key Laboratory of Microwave Devices & Integrated Circuit;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
..............page:70-73
CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy
Li Xin Fu Jian Huang Yumei;and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
Li Xin Fu Jian Huang Yumei;and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
..............page:122-127
Resonant tunnelling in nc-Si/SiO2 multilayers at room temperature
Chen Deyuan 1 College of Electronic Science & Engineering;Nanjing University of Posts and Telecommunications;Nanjing 210046;China 2 Nanjing National Laboratory of Microstructures and Key Laboratory of Advanced Photonic and Electronic materials; Department of Physics;Nanjing University;Nanjing 210093;China
Chen Deyuan 1 College of Electronic Science & Engineering;Nanjing University of Posts and Telecommunications;Nanjing 210046;China 2 Nanjing National Laboratory of Microstructures and Key Laboratory of Advanced Photonic and Electronic materials; Department of Physics;Nanjing University;Nanjing 210093;China
..............page:23-26
Preparation of Sn-Ag-In ternary solder bumps by electroplating in sequence and reliability
Wang Dongliang~;Yuan Yuan~1;and Luo Le~ 1 State Key Laboratory of Transducer Technology;Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences;Shanghai 200050;China 2 Graduate of University;Chinese Academy of Sciences;Beijing 100049;China
Wang Dongliang~;Yuan Yuan~1;and Luo Le~ 1 State Key Laboratory of Transducer Technology;Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences;Shanghai 200050;China 2 Graduate of University;Chinese Academy of Sciences;Beijing 100049;China
..............page:27-32
Two-dimensional numerical computation of the structure-dependent spectral response in a 4H-SiC metal-semiconductor-metal ultraviolet photodetector with consideration of reflection and absorption on contact electrodes
Chen Bin;Yang Yintang Chai Changchun;Song Kun and Ma Zhenyang Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics; Xidian University;Xi’an 710071;China
Chen Bin;Yang Yintang Chai Changchun;Song Kun and Ma Zhenyang Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics; Xidian University;Xi’an 710071;China
..............page:33-39
Antireflection properties and solar cell application of silicon nanoscructures
Yue Huihui;Jia Rui;Chen Chen;Ding Wuchang Wu Deqi;and Liu Xinyu Key Laboratory of Microwave Devices and Integrated Circuits;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
Yue Huihui;Jia Rui;Chen Chen;Ding Wuchang Wu Deqi;and Liu Xinyu Key Laboratory of Microwave Devices and Integrated Circuits;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
..............page:55-60
Modeling of current mismatch induced by random dopant fluctuation in nano-MOSFETs
Lu Weifeng;and Sun Lingling 1 Key Laboratory of Ministry of Education for RF Circuits and Systems;Hangzhou Dianzi University;Hangzhou 310018;China 2 Institute of VLSI Design;Zhejiang University;Hangzhou 310027;China
Lu Weifeng;and Sun Lingling 1 Key Laboratory of Ministry of Education for RF Circuits and Systems;Hangzhou Dianzi University;Hangzhou 310018;China 2 Institute of VLSI Design;Zhejiang University;Hangzhou 310027;China
..............page:46-50
A 102-dB-SNR mixed CT/DT Σ△ ADC with capacitor digital self-calibration for RC spread compensation
Liu Yan;Hua Siliang Wang Donghui;and Hou Chaohuan Institute of Acoustics;Chinese Academy of Sciences;Beijing 100190;China
Liu Yan;Hua Siliang Wang Donghui;and Hou Chaohuan Institute of Acoustics;Chinese Academy of Sciences;Beijing 100190;China
..............page:87-92
Electrode pattern design for GaAs betavoltaic batteries
Chen Haiyang Yin Jianhua;and Li Darang School of Mechanical Engineering;Beijing Institute of Technology;Beijing 100081;China
Chen Haiyang Yin Jianhua;and Li Darang School of Mechanical Engineering;Beijing Institute of Technology;Beijing 100081;China
..............page:61-64
A CMOS wideband front-end chip using direct RF sampling mixer with embedded discrete-time filtering
Xu Jiangtao Carlos E.Saavedra2;and Chen Guican 1 Institute of Microelectronics;Xi’an Jiaotong University;Shaanxi 710049;China 2 Queen’s University;Ontario;Canada
Xu Jiangtao Carlos E.Saavedra2;and Chen Guican 1 Institute of Microelectronics;Xi’an Jiaotong University;Shaanxi 710049;China 2 Queen’s University;Ontario;Canada
..............page:111-117
A 5 Gb/s transceiver in 0.13μm CMOS for PCIE2.0
Luo Gang;Gao Changping;and Zeng Xianjun School of Computer Science;National University of Defense Technology;Changsha 410073;China
Luo Gang;Gao Changping;and Zeng Xianjun School of Computer Science;National University of Defense Technology;Changsha 410073;China
..............page:138-145
A 14-bit wide temperature range differential SAR ADC with an on-chip multi-segment BGR
Qiao Ning;Gao Jiantou;Zhao Kai;Yang Bo Liu Zhongli;and Yu Fang 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
Qiao Ning;Gao Jiantou;Zhao Kai;Yang Bo Liu Zhongli;and Yu Fang 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
..............page:80-86
A Ka-band 22 dBm GaN amplifier MMIC
Wang Dongfang;Chen Xiaojuan Yuan Tingting Wei Ke;and Liu Xinyu Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Wang Dongfang;Chen Xiaojuan Yuan Tingting Wei Ke;and Liu Xinyu Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:128-131
A fast transient response low dropout regulator with current control methodology
Ma Zhuo;Guo Yang;Duan Zhikui Xie Lunguo Chen Jihua;and Yu Jinshan School of Computer;National University of Defense Technology;Changsha 410073;China
Ma Zhuo;Guo Yang;Duan Zhikui Xie Lunguo Chen Jihua;and Yu Jinshan School of Computer;National University of Defense Technology;Changsha 410073;China
..............page:104-110
A 0.18μm CMOS low noise amplifier using a current reuse technique for 3.1-10.6 GHz UWB receivers
Wang Chunhua and Wan Qiuzhen College of Information Science and Engineering;Hunan University;Changsha 410082;China
Wang Chunhua and Wan Qiuzhen College of Information Science and Engineering;Hunan University;Changsha 410082;China
..............page:74-79
Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition
Xiao Qingquan;Xie Quan’;Chen Qian Zhao Kejie Yu Zhiqiang and Shen Xiangqian Institute of Advanced Optoelectronic Materials and Technology;College of Science;Guizhou University; Guiyang 550025;China
Xiao Qingquan;Xie Quan’;Chen Qian Zhao Kejie Yu Zhiqiang and Shen Xiangqian Institute of Advanced Optoelectronic Materials and Technology;College of Science;Guizhou University; Guiyang 550025;China
..............page:5-9
..............page:2
Current-voltage characteristics of light-emitting diodes under optical and electrical excitation
Wen Jing;Wen Yumei Li Ping and Li Lian Key Laboratory for Opto-Electronic Technologies & Systems of Ministry of Education;College of Opto-Electronic Engineering; Chongqing University;Chongqing 400044;China
Wen Jing;Wen Yumei Li Ping and Li Lian Key Laboratory for Opto-Electronic Technologies & Systems of Ministry of Education;College of Opto-Electronic Engineering; Chongqing University;Chongqing 400044;China
..............page:51-54
Gate-enclosed NMOS transistors
Fan Xue;Li Ping Li Wei Zhang Bin;Xie Xiaodong Wang Gang;Hu Bin;and Zhai Yahong School of Microelectronics and Solid-State Electronics;State Key Laboratory of Electronic Thin Films and Integrated Devices; University of Electronic Science and Technology of China;Chengdu 610054;China
Fan Xue;Li Ping Li Wei Zhang Bin;Xie Xiaodong Wang Gang;Hu Bin;and Zhai Yahong School of Microelectronics and Solid-State Electronics;State Key Laboratory of Electronic Thin Films and Integrated Devices; University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:40-45
Surface morphology and composition studies in InGaN/GaN film grown by MOCVD
Tao Tao;Zhang Zhao;Liu Lian;Su Hui Xie Zili Zhang Rong;Liu Bin Xiu Xiangqian Li Yi Han Ping Shi Yi;and Zheng Youdou Key Laboratory of Advanced Photonic and Electronic Materials;School of Electronics Science and Engineering; Nanjing University;Nanjing 210093;China
Tao Tao;Zhang Zhao;Liu Lian;Su Hui Xie Zili Zhang Rong;Liu Bin Xiu Xiangqian Li Yi Han Ping Shi Yi;and Zheng Youdou Key Laboratory of Advanced Photonic and Electronic Materials;School of Electronics Science and Engineering; Nanjing University;Nanjing 210093;China
..............page:14-17
A 5 GHz CMOS frequency synthesizer with novel phase-switching prescaler and high-Q LC-VCO
Cao Shengguo;Yang Yuqing Tan Xi Yan Na and Min Hao State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
Cao Shengguo;Yang Yuqing Tan Xi Yan Na and Min Hao State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China
..............page:98-103
Tunable filters based on an SOI nano-wire waveguide micro ring resonator
Li Shuai;Wu Yuanda Yin Xiaojie An Junming Li Jianguang Wang Hongjie and Hu Xiongwei Optoelectronics Research and Development Center;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Li Shuai;Wu Yuanda Yin Xiaojie An Junming Li Jianguang Wang Hongjie and Hu Xiongwei Optoelectronics Research and Development Center;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:65-69