0253-4177
2011 Issue 5
Analysis and design of a 1.8-2.7 GHz tunable 8-band TDD LTE receiver front-end
Wang Xiao;Wang Yuji Wang Weiwei;Chang Xuegui Yan Na;Tan Xi;and Min Hao State Key Laboratory of ASIC & System;Fudan University;Shanghai 200433;China
Wang Xiao;Wang Yuji Wang Weiwei;Chang Xuegui Yan Na;Tan Xi;and Min Hao State Key Laboratory of ASIC & System;Fudan University;Shanghai 200433;China
..............page:104-110
An analytical model for the surface electrical field distribution of LDMOSFETs with shield rings
Chen Lei and Du Huan Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Chen Lei and Du Huan Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:48-51
A dual-mode 6-9 GHz transmitter for OFDM-UWB
Chen Yunfeng~1;Gao Ting~1;Li Wei~+;Li Ning and Ren Junyan 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Micro-/Nano-Electronics Science and Technology Innovation Platform;Fudan University;Shanghai 201203;China
Chen Yunfeng~1;Gao Ting~1;Li Wei~+;Li Ning and Ren Junyan 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Micro-/Nano-Electronics Science and Technology Innovation Platform;Fudan University;Shanghai 201203;China
..............page:92-98
A micromachined inline type microwave power sensor with working state transfer switches
Han Lei Key Laboratory of MEMS of Ministry of Education;Southeast University;Nanjing 210096;China
Han Lei Key Laboratory of MEMS of Ministry of Education;Southeast University;Nanjing 210096;China
..............page:87-91
A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design
Chen Lei;Ruan Ying;Su Jie Zhang Shulin Shi Chunqi;and Lai Zongsheng Institute of Microelectronics Circuit & System;East China Normal University;Shanghai 200062;China
Chen Lei;Ruan Ying;Su Jie Zhang Shulin Shi Chunqi;and Lai Zongsheng Institute of Microelectronics Circuit & System;East China Normal University;Shanghai 200062;China
..............page:99-103
A CMOS G_m-C complex filter with on-chip automatic tuning for wireless sensor network application
Wan Chuanchuani;Li Zhiqun~+;and Hou Ningbing Institute of RF-& OE-ICs;Southeast University;Nanjing 210096;China
Wan Chuanchuani;Li Zhiqun~+;and Hou Ningbing Institute of RF-& OE-ICs;Southeast University;Nanjing 210096;China
..............page:81-86
Characteristics of CdTe nanocrystals synthesized by a Na2TeO3 source
Wang Meiping~+;Fu Kai;and Lin Jinhui College of Materials and Chemistry & Chemical Engineering;Chengdu University of Technology;Chengdu 610059;China
Wang Meiping~+;Fu Kai;and Lin Jinhui College of Materials and Chemistry & Chemical Engineering;Chengdu University of Technology;Chengdu 610059;China
..............page:28-31
A physical-based pMOSFETs threshold voltage model including the STI stress effect
Wu Wei;Du Gang;Liu Xiaoyan;Sun Lei;Kang Jinfeng and Han Ruqi Institute of Microelectronics;Peking University;Beijing 100871;China
Wu Wei;Du Gang;Liu Xiaoyan;Sun Lei;Kang Jinfeng and Han Ruqi Institute of Microelectronics;Peking University;Beijing 100871;China
..............page:57-61
Effects of vacancy structural defects on the thermal conductivity of silicon thin films
Zhang Xingli~+ and Sun Zhaowei Research Center of Satellite Technology;Harbin Institute Technology;Harbin 150001;China
Zhang Xingli~+ and Sun Zhaowei Research Center of Satellite Technology;Harbin Institute Technology;Harbin 150001;China
..............page:18-21
Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching
Ou Weiying;Zhao Lei;Diao Hongwei;Zhang Jun and Wang Wenjing Key Laboratory of Solar Thermal Energy and Photovoltaic System;Institute of Electrical Engineering;Chinese Academy of Sciences;Beijing 100190;China
Ou Weiying;Zhao Lei;Diao Hongwei;Zhang Jun and Wang Wenjing Key Laboratory of Solar Thermal Energy and Photovoltaic System;Institute of Electrical Engineering;Chinese Academy of Sciences;Beijing 100190;China
..............page:149-152
A high-power tapered and cascaded active multimode interferometer semiconductor laser diode
Lai Weijiang~;Cheng Yuanbing~1;Yao Chen~1;Zhou Daibing Bian Jing~2;Zhao Lingjuan;and Wu Jian 1 Key Laboratory of Information Photonics and Optical Communication;Beijing University of Posts and Telecommunications; Beijing 100876;China 2 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Lai Weijiang~;Cheng Yuanbing~1;Yao Chen~1;Zhou Daibing Bian Jing~2;Zhao Lingjuan;and Wu Jian 1 Key Laboratory of Information Photonics and Optical Communication;Beijing University of Posts and Telecommunications; Beijing 100876;China 2 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:66-69
PDSOI DTMOS for analog and RF application
Wang Yiqi~2;Liu Mengxin~+;Bi Jinshun and Han Zhengsheng 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Key Laboratory of Microelectronics Devices & Integrated Technology;Chinese Academy of Sciences;Beijing 100029;China
Wang Yiqi~2;Liu Mengxin~+;Bi Jinshun and Han Zhengsheng 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Key Laboratory of Microelectronics Devices & Integrated Technology;Chinese Academy of Sciences;Beijing 100029;China
..............page:52-56
Design and implementation of an IEEE 802.11 baseband OFDM transceiver in 0.18 μm CMOS
Wu Bin;Zhou Yumei;Zhu Yongxu;Zhang Zhengdong and Cai Jingjing Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Wu Bin;Zhou Yumei;Zhu Yongxu;Zhang Zhengdong and Cai Jingjing Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:76-80
Characterization analysis of UDSM LVTSCR under TLP stress
Li Li~;Liu Hongxia~1;Dong Cui~2;and Zhou Wen 1 Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Ministry of Education; School of Microelectronics;Xidian University;Xi’an 710071;China 2 School of Science;Xidian University;Xi’an 710071;China
Li Li~;Liu Hongxia~1;Dong Cui~2;and Zhou Wen 1 Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Ministry of Education; School of Microelectronics;Xidian University;Xi’an 710071;China 2 School of Science;Xidian University;Xi’an 710071;China
..............page:42-47
A highly linear fully integrated CMOS power amplifier with an analog predistortion technique
Jin Boshi~+;Li Lewei;Wu Qun;Yang Guohui and Zhang Kuang 1 Department of Electronic and Communications Engineering;Harbin Institute of Technology;Harbin 150001;China 2 Department of Electrical and Computer Engineering;National University of Singapore;119260;Singapore
Jin Boshi~+;Li Lewei;Wu Qun;Yang Guohui and Zhang Kuang 1 Department of Electronic and Communications Engineering;Harbin Institute of Technology;Harbin 150001;China 2 Department of Electrical and Computer Engineering;National University of Singapore;119260;Singapore
..............page:62-65
SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs
Amit Chaudhry~;J.N.Roy~2;and S.Sangwan~1 1 UIET;Panjab University;Chandigarh;India 2 Solar Semiconductro Pvt.Ltd;Hyderabad;India
Amit Chaudhry~;J.N.Roy~2;and S.Sangwan~1 1 UIET;Panjab University;Chandigarh;India 2 Solar Semiconductro Pvt.Ltd;Hyderabad;India
..............page:36-41
A software solution to estimate the SEU-induced soft error rate for systems implemented on SRAM-based FPGAs
Wang Zhongming~+;Yao Zhibin Guo Hongxia and Lu Min 1 Department of Engineering Physics;Tsinghua University;Beijing 100084;China 2 Northwest Institute of Nuclear Technology;Xi’an 710024;China
Wang Zhongming~+;Yao Zhibin Guo Hongxia and Lu Min 1 Department of Engineering Physics;Tsinghua University;Beijing 100084;China 2 Northwest Institute of Nuclear Technology;Xi’an 710024;China
..............page:117-123
First-principles study on transport properties of zigzag graphene nanoribbon with different spin-configurations
An Liping~ and Liu Nianhua 1 Institute for Advanced Study;Nanchang University;Nanchang 330031;China 2 Department of Physics;Yanshan University;Qinhuangdao 066004;China
An Liping~ and Liu Nianhua 1 Institute for Advanced Study;Nanchang University;Nanchang 330031;China 2 Department of Physics;Yanshan University;Qinhuangdao 066004;China
..............page:1-6
A new FPGA architecture suitable for DSP applications
Wang Liyun;Lai Jinmei;Tong Jiarong;Tang Pushan Chen Xing;Duan Xueyan;Chen Liguang;Wang Jian and Wang Yuan ASIC and System State Key Laboratory;Fudan University;Shanghai 201203;China
Wang Liyun;Lai Jinmei;Tong Jiarong;Tang Pushan Chen Xing;Duan Xueyan;Chen Liguang;Wang Jian and Wang Yuan ASIC and System State Key Laboratory;Fudan University;Shanghai 201203;China
..............page:140-145
Cleaning method of InSb [111] B of n-InSb [111] A/B for the growth of epitaxial layers by liquid phase epitaxy
Gh.Sareminia~;F.Zahedi~1;Sh.Eminov~2;and Ar.Karamian~3 1 Electronic Component Industry-Optoelectronic Industry;P.O.Box 19575-199;Tehran;Iran 2 Institute of Physics;Azerbaijan University;Baku;Azerbaijan 3 Department of Mathematics;Razi University;Kermansha;Iran
Gh.Sareminia~;F.Zahedi~1;Sh.Eminov~2;and Ar.Karamian~3 1 Electronic Component Industry-Optoelectronic Industry;P.O.Box 19575-199;Tehran;Iran 2 Institute of Physics;Azerbaijan University;Baku;Azerbaijan 3 Department of Mathematics;Razi University;Kermansha;Iran
..............page:146-148
Annealing optimization of hydrogenated amorphous silicon suboxide film for solar cell application
Jia Guangzhi;Liu Honggang;and Chang Hudong Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Jia Guangzhi;Liu Honggang;and Chang Hudong Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:7-9
Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition
Li Ran~+;Huang Hui;Ren Xiaomin~1;Guo Jingwei Liu Xiaolong~1;Huang Yongqing and Cai Shiwei 1 Key Laboratory of Information Photonics and Optical Communications;Ministry of Education;Beijing University of Posts and Telecommunications;Beijing 100088;China 2 Electronics Science and Technology Institute;Dalian University of Technology;Dalian 116085;China
Li Ran~+;Huang Hui;Ren Xiaomin~1;Guo Jingwei Liu Xiaolong~1;Huang Yongqing and Cai Shiwei 1 Key Laboratory of Information Photonics and Optical Communications;Ministry of Education;Beijing University of Posts and Telecommunications;Beijing 100088;China 2 Electronics Science and Technology Institute;Dalian University of Technology;Dalian 116085;China
..............page:22-27
Physical properties of sprayed antimony doped tin oxide thin films:The role of thickness
A.R.Babar~1;S.S.Shinde~1;A.V.Moholkar~1;C.H.Bhosale~1;J.H.Kim~2;and K.Y.Rajpure~ 1 Electrochemical Materials Laboratory;Department of Physics;Shivaji University;Kolhapur-416 004;India 2 Department of Materials Science and Engineering;Chonnam National University;300 Yongbong-Dong;Buk-Gu; Gwangju;500-757;South Korea
A.R.Babar~1;S.S.Shinde~1;A.V.Moholkar~1;C.H.Bhosale~1;J.H.Kim~2;and K.Y.Rajpure~ 1 Electrochemical Materials Laboratory;Department of Physics;Shivaji University;Kolhapur-416 004;India 2 Department of Materials Science and Engineering;Chonnam National University;300 Yongbong-Dong;Buk-Gu; Gwangju;500-757;South Korea
..............page:10-17
Novel closed-form resistance formulae for rectangular interconnects
Chen Baojun~;Tang Zhen’an~1;and Yu Tiejun 1 School of Electronic Science and Technology;Dalian University of Technology;Dalian 116023;China 2 School of Electronics and Information Engineering;Dalian Jiaotong University;Dalian 116028;China 3 Department of R&D;Sigrity Inc;Santa Clara;CA 95051;USA
Chen Baojun~;Tang Zhen’an~1;and Yu Tiejun 1 School of Electronic Science and Technology;Dalian University of Technology;Dalian 116023;China 2 School of Electronics and Information Engineering;Dalian Jiaotong University;Dalian 116028;China 3 Department of R&D;Sigrity Inc;Santa Clara;CA 95051;USA
..............page:70-75
Material properties and effective work function of reactive sputtered TaN gate electrodes
Zhang Manhong~+;Huo Zongliang;Wang Qin;and Liu Ming Laboratory of Nanofabrication and Novel Device Integration;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
Zhang Manhong~+;Huo Zongliang;Wang Qin;and Liu Ming Laboratory of Nanofabrication and Novel Device Integration;Institute of Microelectronics;Chinese Academy of Sciences; Beijing 100029;China
..............page:32-35
Finite element simulation of hydrostatic stress in copper interconnects
Yuan Guangjie and Chen Leng School of Materials Science and Engineering;University of Science and Technology Beijing;Beijing 100083;China
Yuan Guangjie and Chen Leng School of Materials Science and Engineering;University of Science and Technology Beijing;Beijing 100083;China
..............page:134-139
High-precision high-sensitivity clock recovery circuit for a mobile payment application
Sun Lichong;Ren Wenliang;Yan Na~+;and Min Hao 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Quanray Electronics Co.;Ltd.;Shanghai 201203;China
Sun Lichong;Ren Wenliang;Yan Na~+;and Min Hao 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Quanray Electronics Co.;Ltd.;Shanghai 201203;China
..............page:111-116
Design of a passive UHF RFID tag for the ISO18000-6C protocol
Wang Yao;Wen Guangjun;Mao Wei;He Yanli and Zhu Xueyong RFIC Laboratory CICS;School of Communication and Information Engineering;University of Electronic Science and Technology of China;Chengdu 611731;China
Wang Yao;Wen Guangjun;Mao Wei;He Yanli and Zhu Xueyong RFIC Laboratory CICS;School of Communication and Information Engineering;University of Electronic Science and Technology of China;Chengdu 611731;China
..............page:124-129
Effects of pattern characteristics on the copper electroplating process
Ruan Wenbiao~+;Chen Lan;Li Zhigang;Ye Tianchun Ma Tianyu;and Wang Qiang Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Ruan Wenbiao~+;Chen Lan;Li Zhigang;Ye Tianchun Ma Tianyu;and Wang Qiang Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:130-133