0253-4177
2011 Issue 3
An InGaAs/InP 40 GHz CML static frequency divider
SuYongbo~1;Jin Zhi~1;Cheng Wei~1;Ge Ji~1;Wang Xiantai~1; Chen Gaopeng~1;Liu Xinyu~1;Xu Anhuai~2;and Qi Ming~2 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China
SuYongbo~1;Jin Zhi~1;Cheng Wei~1;Ge Ji~1;Wang Xiantai~1; Chen Gaopeng~1;Liu Xinyu~1;Xu Anhuai~2;and Qi Ming~2 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China
..............page:127-130
GaN-based MSM photovoltaic ultraviolet detector structure modeling and its simulation
Chen Yiren;Song Hang;Li Dabing;Sun Xiaojuan; Li Zhiming;Jiang Hong;and Miao Guoqing Key Laboratory of Excited State Processes;Changchun Institute of Optics;Fine Mechanics and Physics;Chinese Academy of Sciences;Changchun 130033;China
Chen Yiren;Song Hang;Li Dabing;Sun Xiaojuan; Li Zhiming;Jiang Hong;and Miao Guoqing Key Laboratory of Excited State Processes;Changchun Institute of Optics;Fine Mechanics and Physics;Chinese Academy of Sciences;Changchun 130033;China
..............page:61-65
Design of a photonic crystal microcavity for biosensing
Li Junhua;Kan Qiang;Wang Chunxia;Su Baoqing Xie Yiyang;and Chen Hongda State Key Laboratory Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Li Junhua;Kan Qiang;Wang Chunxia;Su Baoqing Xie Yiyang;and Chen Hongda State Key Laboratory Integrated Optoelectronics;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:75-80
A robust and simple two-mode digital calibration technique for pipelined ADC
Yin Xiumei;Zhao Nan;Sekedi Bomeh Kobenge; and Yang Huazhong Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
Yin Xiumei;Zhao Nan;Sekedi Bomeh Kobenge; and Yang Huazhong Department of Electronic Engineering;Tsinghua University;Beijing 100084;China
..............page:81-87
A millimeter wave large-signal model of GaAs planar Schottky varactor diodes
Dong Junrong;Huang Jie;Tian Chao;Yang Hao and Zhang Haiying Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Dong Junrong;Huang Jie;Tian Chao;Yang Hao and Zhang Haiying Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:49-53
An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier
Li Chengzhan;Chen Zhijian;Huang Jiwei;Wang Yongping; Ma Chuanhui;Yang Hanbing;Liao Yinghao; Zhou Yong;and Liu Bin Guangzhou Runxin Information Technology Co.;Ltd;Guangzhou 510663;China
Li Chengzhan;Chen Zhijian;Huang Jiwei;Wang Yongping; Ma Chuanhui;Yang Hanbing;Liao Yinghao; Zhou Yong;and Liu Bin Guangzhou Runxin Information Technology Co.;Ltd;Guangzhou 510663;China
..............page:131-134
Design of a 0.18μm CMOS multi-band compatible low power GNSS receiver RF frontend
Li Bing;Zhuang Yiqi;Long Qiang;Jin Zhao;Li Zhenrong; and Jin Gang Key Laboratory of the Ministry of Education for Wide Bandgap Semiconductor Materials and Devices; School of Microelectronics;Xidian University;Xi’an 710071;China
Li Bing;Zhuang Yiqi;Long Qiang;Jin Zhao;Li Zhenrong; and Jin Gang Key Laboratory of the Ministry of Education for Wide Bandgap Semiconductor Materials and Devices; School of Microelectronics;Xidian University;Xi’an 710071;China
..............page:116-126
Dark conductivity and photoconductivity of amorphous Hg0.78Cd0.22Te thin films
Qiu Feng~;Xiang Jinzhong~1;Kong Jincheng~2;Yu Lianjie~2; Kong Lingde~2;Wang Guanghua~2;Li Xiongjun~2;Yang Lili~2; Li Cong~;and Ji Rongbin~2; 1 School of Physical Science and Technology;Yunnan University;Kunming 650091;China 2 Kunming Institute of Physics;Kunming 650223;China
Qiu Feng~;Xiang Jinzhong~1;Kong Jincheng~2;Yu Lianjie~2; Kong Lingde~2;Wang Guanghua~2;Li Xiongjun~2;Yang Lili~2; Li Cong~;and Ji Rongbin~2; 1 School of Physical Science and Technology;Yunnan University;Kunming 650091;China 2 Kunming Institute of Physics;Kunming 650223;China
..............page:26-30
Model analysis and experimental investigation of the friction torque during the CMP process
Guo Dongming;Xu Chi;Kang Renke;and Jin Zhuji Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education;Dalian University of Technology;Dalian 116024;China
Guo Dongming;Xu Chi;Kang Renke;and Jin Zhuji Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education;Dalian University of Technology;Dalian 116024;China
..............page:140-144
Effects of contact electrode size on the characteristics of polycrystalline-Si p-i-n solar cells
M.H.Juang;H.Y.Huang;and S.L.Jang Department of Electronic Engineering;National Taiwan University of Science and Technology;106 Taipei;Taiwan;China
M.H.Juang;H.Y.Huang;and S.L.Jang Department of Electronic Engineering;National Taiwan University of Science and Technology;106 Taipei;Taiwan;China
..............page:57-60
Organic thin film transistors with a SiO2/SiNx/SiO2 composite insulator layer
Liu Xiang~1 and Liu Hui~2; 1 School of Materials Science and Engineering;Dalian Jiaotong University;Dalian 116028;China 2 School of Electronic and Information Engineering;Dalian University of Technology;Dalian 116024;China
Liu Xiang~1 and Liu Hui~2; 1 School of Materials Science and Engineering;Dalian Jiaotong University;Dalian 116028;China 2 School of Electronic and Information Engineering;Dalian University of Technology;Dalian 116024;China
..............page:54-56
Evolution of ZnO architecture on a nanoporous TiO2 film by a hydrothermal method and the photoelectrochemical performance
Jiang Yinhua~;Wu Xiaoli~1;Zhang Wenli~1;Ni Liang~1; and Sun Yueming~2; 1 School of Chemistry and Chemical Engineering;Jiangsu University;Zhenjiang 212013;China 2 School of Chemistry and Chemical Engineering;Southeast University;Nanjing 211189;China
Jiang Yinhua~;Wu Xiaoli~1;Zhang Wenli~1;Ni Liang~1; and Sun Yueming~2; 1 School of Chemistry and Chemical Engineering;Jiangsu University;Zhenjiang 212013;China 2 School of Chemistry and Chemical Engineering;Southeast University;Nanjing 211189;China
..............page:31-36
Physical properties of spray deposited CdTe thin films:PEC performance
V.M.Nikale;S.S.Shinde;C.H.Bhosale;and K.Y.Rajpure Electrochemical Materials Laboratory;Department of Physics;Shivaji University;Kolhapur-416004;India
V.M.Nikale;S.S.Shinde;C.H.Bhosale;and K.Y.Rajpure Electrochemical Materials Laboratory;Department of Physics;Shivaji University;Kolhapur-416004;India
..............page:10-16
A 2.5-V 56-mW baseband chain in a multistandard TV tuner for mobile and multimedia applications
Yang Zhou;Wen Guangjun;and Feng Xiao University of Electronic Science and Technology of China;Chengdu 611731;China
Yang Zhou;Wen Guangjun;and Feng Xiao University of Electronic Science and Technology of China;Chengdu 611731;China
..............page:94-99
A resistorless CMOS current reference with temperature compensation
Yan Wei;Tian Xin;Li Wenhong;and Liu Ran State Key Laboratory of ASIC & Systems;Fudan University;Shanghai 201203;China
Yan Wei;Tian Xin;Li Wenhong;and Liu Ran State Key Laboratory of ASIC & Systems;Fudan University;Shanghai 201203;China
..............page:112-115
MOS structure fabrication by thermal oxidation of multilayer metal thin films
Mohammad Orvatinia~ and Atefeh Chahkoutahi~2 1 Electron Engineering Department;Information and Communication Technology Faculty;ICT Ministry of Iran; Tehran 16315-746;Iran 2 Bushehr Azad University;Bushehr;Iran
Mohammad Orvatinia~ and Atefeh Chahkoutahi~2 1 Electron Engineering Department;Information and Communication Technology Faculty;ICT Ministry of Iran; Tehran 16315-746;Iran 2 Bushehr Azad University;Bushehr;Iran
..............page:135-139
The enhanced low dose rate sensitivity of a linear voltage regulator with different biases
Wang Yiyuan~;Lu Wu~;Ren Diyuan~;Guo Qi~; Yu Xuefeng~;and Gao Bo~ 1 Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;Urumqi 830011;China 2 Xinjiang Key Laboratory of Electronic Information Materials and Devices;Urumqi 830011;China 3 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
Wang Yiyuan~;Lu Wu~;Ren Diyuan~;Guo Qi~; Yu Xuefeng~;and Gao Bo~ 1 Xinjiang Technical Institute of Physics & Chemistry;Chinese Academy of Sciences;Urumqi 830011;China 2 Xinjiang Key Laboratory of Electronic Information Materials and Devices;Urumqi 830011;China 3 Graduate University of the Chinese Academy of Sciences;Beijing 100049;China
..............page:71-74
Growth and microstructure properties of microcrystalline silicon films deposited using jet-ICPCVD
Zuo Zewen~1;Guan Wentian~1;Xin Yu~2;L Jin~1; Wang Junzhuan~1;Pu Lin~1;Shi Yi~1;and Zheng Youdou~1 1 School of Electronic Science and Engineering;and Key Laboratory of Photonic and Electronic Materials;Nanjing University; Nanjing 210093;China 2 School of Physical Science and Technology;Suzhou University;Suzhou 215006;China
Zuo Zewen~1;Guan Wentian~1;Xin Yu~2;L Jin~1; Wang Junzhuan~1;Pu Lin~1;Shi Yi~1;and Zheng Youdou~1 1 School of Electronic Science and Engineering;and Key Laboratory of Photonic and Electronic Materials;Nanjing University; Nanjing 210093;China 2 School of Physical Science and Technology;Suzhou University;Suzhou 215006;China
..............page:1-5
A novel method to enhance the gettering efficiency in p-type Czochralski silicon by a sacrificial porous silicon layer
Zhang Caizhen;Wang Yongshun;and Wang Zaixing School of Electronic and Information Engineering;Lanzhou Jiaotong University;Lanzhou 730070;China
Zhang Caizhen;Wang Yongshun;and Wang Zaixing School of Electronic and Information Engineering;Lanzhou Jiaotong University;Lanzhou 730070;China
..............page:6-9
A low power 12-bit 200-kS/s SAR ADC with a differential time domain comparator
Yang Siyu;Zhang Hui;Fu Wenhui;Yi Ting; and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
Yang Siyu;Zhang Hui;Fu Wenhui;Yi Ting; and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
..............page:88-93
A speaker driver for a single phase supply class G & I
Feng Yong~1;Yang Shanshan~;Peng Zhenfei~1; Hong Zhiliang~;and Liu Yang~2 1 State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China 2 Shanghai Design Center;Analog Devices;Shanghai 200021;China
Feng Yong~1;Yang Shanshan~;Peng Zhenfei~1; Hong Zhiliang~;and Liu Yang~2 1 State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China 2 Shanghai Design Center;Analog Devices;Shanghai 200021;China
..............page:105-111
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system
Yin Haibo;Wang Xiaoliang;Ran Junxue;Hu Guoxin; Zhang Lu;Xiao Hongling;Li Jing;and Li Jinmin Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Yin Haibo;Wang Xiaoliang;Ran Junxue;Hu Guoxin; Zhang Lu;Xiao Hongling;Li Jing;and Li Jinmin Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:17-20
Numerical analysis of the self-heating effect in SGOI with a double step buried oxide
Li Bin;Liu Hongxia;Li Jin;Yuan Bo;and Cao Lei Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education;School of Microelectronics; Xidian University;Xi’an 710071;China
Li Bin;Liu Hongxia;Li Jin;Yuan Bo;and Cao Lei Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education;School of Microelectronics; Xidian University;Xi’an 710071;China
..............page:42-48
Removal of impurities from metallurgical grade silicon by electron beam melting
Luo Dawei~1;Liu Ning~1;Lu Yiping~1;Zhang Guoliang~1; and Li Tingju~ 1 School of Materials Science and Engineering;Dalian University of Technology;Dalian 116024;China 2 Ministry of Education Key Laboratory of Materials Modification by Laser;Ion and Electron Beams;Dalian University of Technology;Dalian 116024;China
Luo Dawei~1;Liu Ning~1;Lu Yiping~1;Zhang Guoliang~1; and Li Tingju~ 1 School of Materials Science and Engineering;Dalian University of Technology;Dalian 116024;China 2 Ministry of Education Key Laboratory of Materials Modification by Laser;Ion and Electron Beams;Dalian University of Technology;Dalian 116024;China
..............page:21-25
Novel capacitance-type humidity sensor based on multi-wall carbon nanotube/SiO2 composite films
Liu Xiaowei~;Zhao Zhengang~1;Li Tuo~1;and Wang Xin~1 1 Department of Microelectronics;Harbin Institute of Technology;Harbin 150001;China 2 Key Laboratory of Micro-Systems and Micro-Structures Manufacturing;Ministry of Education;Harbin 150001;China
Liu Xiaowei~;Zhao Zhengang~1;Li Tuo~1;and Wang Xin~1 1 Department of Microelectronics;Harbin Institute of Technology;Harbin 150001;China 2 Key Laboratory of Micro-Systems and Micro-Structures Manufacturing;Ministry of Education;Harbin 150001;China
..............page:66-70
A low spur,low jitter 10-GHz phase-locked loop in 0.13-μm CMOS technology
Mei Niansong;Sun Yu;Lu Bo;Pan Yaohua; Huang Yumei;and Hong Zhiliang State Key Laboratory of ASIC & Systems;Fudan University;Shanghai 201203;China
Mei Niansong;Sun Yu;Lu Bo;Pan Yaohua; Huang Yumei;and Hong Zhiliang State Key Laboratory of ASIC & Systems;Fudan University;Shanghai 201203;China
..............page:100-104
Mass transport analysis of a showerhead MOCVD reactor
Li Hui~ 1 School of Energy and Power Engineering;Jiangsu University;Zhenjiang 212013;China 2 School of Mechanical Engineering;Jimei University;Xiamen 361021;China
Li Hui~ 1 School of Energy and Power Engineering;Jiangsu University;Zhenjiang 212013;China 2 School of Mechanical Engineering;Jimei University;Xiamen 361021;China
..............page:37-41