0253-4177
2011 Issue 12
A 750 MHz semi-digital clock and data recovery circuit with 10-12 BER
Wei Xueming;Wang Yiwen;Li Ping;and Luo Heping State Key Laboratory of Electronic Thin Films and Integrated Devices.University of Electronic Science & Technology of China. Chengdu 610054;China
Wei Xueming;Wang Yiwen;Li Ping;and Luo Heping State Key Laboratory of Electronic Thin Films and Integrated Devices.University of Electronic Science & Technology of China. Chengdu 610054;China
..............page:139-143
A transformer-loaded receiver front end for 2.4 GHz WLAN in 0.13μm CMOS technology
Peng Miao1;Lin Min2;Shi Yin1;and Fa Foster Dai3 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China 3 Department of Electrical & Computer Engineering.Auburn University;Auburn;AL 36849-5201;USA
Peng Miao1;Lin Min2;Shi Yin1;and Fa Foster Dai3 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China 3 Department of Electrical & Computer Engineering.Auburn University;Auburn;AL 36849-5201;USA
..............page:101-106
A new low-voltage and high-speed sense amplifier for flash memory
Guo Jiarong and Ran Feng Microelectronic R&D Center;Shanghai University;Shanghai 200444;China
Guo Jiarong and Ran Feng Microelectronic R&D Center;Shanghai University;Shanghai 200444;China
..............page:107-111
Harmonic-suppressed quadrature-input frequency divider for OFDM systems
Fu Haipeng1;Ren Junyan;Li Wei;and Li Ning1 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Micro-/Nano-Electronics Science and Technology Innovation Platform;Fudan University;Shanghai 201203;China
Fu Haipeng1;Ren Junyan;Li Wei;and Li Ning1 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Micro-/Nano-Electronics Science and Technology Innovation Platform;Fudan University;Shanghai 201203;China
..............page:116-120
..............page:177-194
12.5 Gbps 1:16 DEMUX IC with high speed synchronizing circuits
Zhou Lei;Wu Danyu;Chen Jianwu; Jin Zhi;and Liu Xinyu 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics; Chinese Academy of Sciences;Beijing 100029;China
Zhou Lei;Wu Danyu;Chen Jianwu; Jin Zhi;and Liu Xinyu 1 Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China 2 Key Laboratory of Microelectronics Devices & Integrated Technology;Institute of Microelectronics; Chinese Academy of Sciences;Beijing 100029;China
..............page:144-148
Collection efficiency and charge transfer optimization for a 4-T pixel with multi n-type implants
Li Weiping;Xu Jiangtao;Xu Chao;Li Binqiao; and Yao Suying School of Electronic and Information Engineering;Tianjin University;Tianjin 300072;China
Li Weiping;Xu Jiangtao;Xu Chao;Li Binqiao; and Yao Suying School of Electronic and Information Engineering;Tianjin University;Tianjin 300072;China
..............page:91-94
Peltier effect in doped silicon microchannel plates
Ci Pengliang1;Shi Jing1;Wang Fei1;Xu Shaohui1; Yang Zhenya1;Yang Pingxiong1;Wang Lianwei; Gao Chen2;and Paul K.Chu3 1 Laboratory of Polar Materials and Devices;Ministry of Education;and Department of Electronic Engineering; East China Normal University;Shanghai 200241;China 2 Department of Microelectronics;Fudan University;Shanghai 200433;China 3 Department of Physics and Material Sciences;City University of Hong Kong;Tat Chee Avenue;Kowloon;Hong Kong;China
Ci Pengliang1;Shi Jing1;Wang Fei1;Xu Shaohui1; Yang Zhenya1;Yang Pingxiong1;Wang Lianwei; Gao Chen2;and Paul K.Chu3 1 Laboratory of Polar Materials and Devices;Ministry of Education;and Department of Electronic Engineering; East China Normal University;Shanghai 200241;China 2 Department of Microelectronics;Fudan University;Shanghai 200433;China 3 Department of Physics and Material Sciences;City University of Hong Kong;Tat Chee Avenue;Kowloon;Hong Kong;China
..............page:40-43
A novel power amplifier structure for RFID tag applications
Deng Jianbao;Zhang Shilin;Li De;Zhang Yanzheng; Mao Luhong;and Xie Sheng School of Electronic and Information Engineering;Tianjin University;Tianjin 300072;China
Deng Jianbao;Zhang Shilin;Li De;Zhang Yanzheng; Mao Luhong;and Xie Sheng School of Electronic and Information Engineering;Tianjin University;Tianjin 300072;China
..............page:112-115
A low power mixed signal DC offset calibration circuit for direct conversion receiver applications
Yang Lijun;Yuan Fang2;Gong Zheng2;Shi Yin2; and Chen Zhiming1 1 Department of Electronic Engineering;Xi’an University of Technology;Xi’an 710048;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China
Yang Lijun;Yuan Fang2;Gong Zheng2;Shi Yin2; and Chen Zhiming1 1 Department of Electronic Engineering;Xi’an University of Technology;Xi’an 710048;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China
..............page:134-138
Influence of morphologies on the field emission performance of oriented ZnO nano-arrays
Wang Lingjie;Yang Zunxian1;Lin Jinyang1; and Guo Tailiang 1 College of Physics and Information Engineering;Fuzhou University;Fuzhou 350002;China 2 Department of Mathematics and Physics.Xiamen University of Technology;Xiamen 361024;China
Wang Lingjie;Yang Zunxian1;Lin Jinyang1; and Guo Tailiang 1 College of Physics and Information Engineering;Fuzhou University;Fuzhou 350002;China 2 Department of Mathematics and Physics.Xiamen University of Technology;Xiamen 361024;China
..............page:44-47
..............page:161-176
MOS Capacitance-Voltage Characteristics Ⅲ.Trapping Capacitance from 2-Charge-State Impurities
Jie Binbin and Sah Chihtang 1 Department of Physics;Xiamen University;Xiamen 361005;China 2 CTSAH Associates;Gainesville;Florida 32605;USA
Jie Binbin and Sah Chihtang 1 Department of Physics;Xiamen University;Xiamen 361005;China 2 CTSAH Associates;Gainesville;Florida 32605;USA
..............page:12-27
A novel 2-T structure memory device using a Si nanodot for embedded application
Yang Xiaonan;Wang Yong;Zhang Manhong1; Huo Zongliang1;Liu Jing1;Zhang Bo2;and Liu Ming 1 Laboratory of Nano-Fabrication and Novel Devices Integrated Technology;Institute of Microelectronics; Chinese Academy of Sciences;Beijing 100029;China 2 Grace Semiconductor Manufacturing Corporation;Shanghai 201203;China
Yang Xiaonan;Wang Yong;Zhang Manhong1; Huo Zongliang1;Liu Jing1;Zhang Bo2;and Liu Ming 1 Laboratory of Nano-Fabrication and Novel Devices Integrated Technology;Institute of Microelectronics; Chinese Academy of Sciences;Beijing 100029;China 2 Grace Semiconductor Manufacturing Corporation;Shanghai 201203;China
..............page:86-90
Neurocomputing van der Pauw function for the measurement of a semiconductor’s resistivity without use of the learning rate of weight vector regulation
Li Hongli;Sun Yicai;Wang Wei1;and Harry Hutchinson1 1 Hebei University of Technology;Tianjin 300130;China 2 Tianjin Vocational Institute;Tianjin 300410;China
Li Hongli;Sun Yicai;Wang Wei1;and Harry Hutchinson1 1 Hebei University of Technology;Tianjin 300130;China 2 Tianjin Vocational Institute;Tianjin 300410;China
..............page:32-39
A 5 GHz 7.2 dB NF low power direct conversion receiver front-end with balun LNA
Hao Shilei;Mei Niansong;Huang Yumei;and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
Hao Shilei;Mei Niansong;Huang Yumei;and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
..............page:121-127
Improvement of the field emission properties of carbon nanotubes by CNT/Fe3O4 composite electrophoretic deposition
Zheng Longwu;Hu Liqin;Yang Fan;and Guo Tailiang Institute of Optoelectronic Display Technology;School of Physics and Information Engineering;Fuzhou University; Fuzhou 350002;China
Zheng Longwu;Hu Liqin;Yang Fan;and Guo Tailiang Institute of Optoelectronic Display Technology;School of Physics and Information Engineering;Fuzhou University; Fuzhou 350002;China
..............page:149-152
A dual-mode analog baseband with digital-assisted DC-offset calibration for WCDMA/GSM receivers
Xie Renzhong;Jiang Chen;Li Weinan;Huang Yumei; and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
Xie Renzhong;Jiang Chen;Li Weinan;Huang Yumei; and Hong Zhiliang State Key Laboratory of ASIC and System;Fudan University;Shanghai 201203;China
..............page:95-100
Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength
Duan Chunyan;Liu Chao;Ai Bin;Lai Jianjun; Deng Youjun;and Shen Hui State Key Laboratory of Optoelectronic Materials and Technologies;Institute for Solar Energy Systems;Sun Yat-sen University; Guangzhou 510275;China
Duan Chunyan;Liu Chao;Ai Bin;Lai Jianjun; Deng Youjun;and Shen Hui State Key Laboratory of Optoelectronic Materials and Technologies;Institute for Solar Energy Systems;Sun Yat-sen University; Guangzhou 510275;China
..............page:48-52
MOS Capacitance-Voltage Characteristics Ⅱ.Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations
Jie Binbin and Sah Chihtang 1 Department of Physics;Xiamen University;Xiamen 361005;China 2 CTSAH Associates;Gainesville;Florida 32605;USA
Jie Binbin and Sah Chihtang 1 Department of Physics;Xiamen University;Xiamen 361005;China 2 CTSAH Associates;Gainesville;Florida 32605;USA
..............page:1-11
A kind of magnetron cavity used in rubidium atomic frequency standards
Yang Shiyu;Cui Jingzhong;Tu Jianhui;and Liang Yaoting Lanzhou Space Technology Institute of Physics;Lanzhou 730000;China
Yang Shiyu;Cui Jingzhong;Tu Jianhui;and Liang Yaoting Lanzhou Space Technology Institute of Physics;Lanzhou 730000;China
..............page:28-31
Study and modeling of the transport mechanism in a Schottky diode on the basis of a GaAs semiinsulator
A.Resfa;Bourzig Y Smahi;and Brahimi R Menezla Laboratory of Modeling and Conception of Electronic Circuits;Department of Electronics;University Djillali Liabes.BP89; Sidi Bel Abbes 22000;Algeria
A.Resfa;Bourzig Y Smahi;and Brahimi R Menezla Laboratory of Modeling and Conception of Electronic Circuits;Department of Electronics;University Djillali Liabes.BP89; Sidi Bel Abbes 22000;Algeria
..............page:58-63
Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs
Jiang Huaping;Chen Wanjun1;Liu Chuang2;Rao Zugang2; Dong Bin2;and Zhang Bo1 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronics Science and Technology of China;Chengdu 610054;China 2 Tianjin Zhonghuan Semiconductor Co.Ltd.;Tianjin 300384;China
Jiang Huaping;Chen Wanjun1;Liu Chuang2;Rao Zugang2; Dong Bin2;and Zhang Bo1 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronics Science and Technology of China;Chengdu 610054;China 2 Tianjin Zhonghuan Semiconductor Co.Ltd.;Tianjin 300384;China
..............page:72-75
A novel high-voltage device structure with an N~+ ring in substrate and the breakdown voltage model
Li Qi;Zhu Jinluan2;Wang Weidong1;Yue Hongwei1; and Jin Liangnian1 1 Guangxi Key Laboratory of Information and Communication;Guilin University of Electronic Technology. Guilin 541004;China 2 Guilin Strong Micro Electronics Co.;Ltd;Guilin 541004;China
Li Qi;Zhu Jinluan2;Wang Weidong1;Yue Hongwei1; and Jin Liangnian1 1 Guangxi Key Laboratory of Information and Communication;Guilin University of Electronic Technology. Guilin 541004;China 2 Guilin Strong Micro Electronics Co.;Ltd;Guilin 541004;China
..............page:76-79
A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate
Liu Bo1;Feng Zhihong;Zhang Sen2;Dun Shaobo1; Yin Jiayun1;Li Jia1;Wang Jingjing1;Zhang Xiaowei1; Fang Yulong1;and Cai Shujun1 1 Science and Technology on ASIC Laboratory;Hebei Semiconductor Research Institute;Shijiazhuang 050051;China 2 School of Materials Science and Engineering;Harbin Institute of Technology;Harbin 150001;China
Liu Bo1;Feng Zhihong;Zhang Sen2;Dun Shaobo1; Yin Jiayun1;Li Jia1;Wang Jingjing1;Zhang Xiaowei1; Fang Yulong1;and Cai Shujun1 1 Science and Technology on ASIC Laboratory;Hebei Semiconductor Research Institute;Shijiazhuang 050051;China 2 School of Materials Science and Engineering;Harbin Institute of Technology;Harbin 150001;China
..............page:68-71
Wafer back pressure control and optimization in the CMP process
Men Yanwu;Zhang Hui;Zhou Kai;and Ye Peiqing State Key Laboratory of Tribology;Tsinghua University;Beijing 100084;China
Men Yanwu;Zhang Hui;Zhou Kai;and Ye Peiqing State Key Laboratory of Tribology;Tsinghua University;Beijing 100084;China
..............page:153-160
In situ nanoscale refinement by highly controllable etching of the(111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire
Gong Yibin;Dai Pengfei;Gao Anran;Li Tie; Zhou Ping;and Wang Yuelin Science and Technology on Micro-System Laboratory;State Key Laboratory of Transducer Technology;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China
Gong Yibin;Dai Pengfei;Gao Anran;Li Tie; Zhou Ping;and Wang Yuelin Science and Technology on Micro-System Laboratory;State Key Laboratory of Transducer Technology;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Shanghai 200050;China
..............page:53-57
Continuous time sigma delta ADC design and non-idealities analysis
Yuan Jun;Zhang Zhaofeng3;Wu Jun3;Wang Chao3; Chen Zhenhai1;Qian Wenrong2;and Yang Yintang1 1 School of Microelectronics;Xidian University;Xi’an 710071;China 2 Marvell Technology Group;Ltd.;Shanghai 201203;China 3 Shanghai Advanced Research Institute;Chinese Academy of Sciences;201203;China
Yuan Jun;Zhang Zhaofeng3;Wu Jun3;Wang Chao3; Chen Zhenhai1;Qian Wenrong2;and Yang Yintang1 1 School of Microelectronics;Xidian University;Xi’an 710071;China 2 Marvell Technology Group;Ltd.;Shanghai 201203;China 3 Shanghai Advanced Research Institute;Chinese Academy of Sciences;201203;China
..............page:128-133
Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch
Ma Xiangrong;Shi Wei2;JiWeili2;and Xue Hong2 1 Institute of Physics and Electronic Engineering;Xinjiang Normal University;Urumqi 830054;China 2 Department of Applied Physics;Xi’an University of Technology;Xi’an 710048;China
Ma Xiangrong;Shi Wei2;JiWeili2;and Xue Hong2 1 Institute of Physics and Electronic Engineering;Xinjiang Normal University;Urumqi 830054;China 2 Department of Applied Physics;Xi’an University of Technology;Xi’an 710048;China
..............page:80-85
Investigation and modeling of the avalanche effect in MOSFETs with non-uniform finger spacing
Liu Jun;Sun Lingling;and Marissa Condon2 1 Key Laboratory of RF Circuits and Systems;Ministry of Education;Hangzhou Dianzi University;Hangzhou 310018;China 2 School of Electronic Engineering;Dublin City University;Dublin 9;Ireland
Liu Jun;Sun Lingling;and Marissa Condon2 1 Key Laboratory of RF Circuits and Systems;Ministry of Education;Hangzhou Dianzi University;Hangzhou 310018;China 2 School of Electronic Engineering;Dublin City University;Dublin 9;Ireland
..............page:64-67