0253-4177
2011 Issue 11
A wideband RF amplifier for satellite tuners
Hu Xueqing~;Gong Zheng~1;Shi Yin~1;and Dai Fa Foster~2 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Department of Electrical and Computer Engineering;Auburn University;Auburn;AL 36849-5201;USA
Hu Xueqing~;Gong Zheng~1;Shi Yin~1;and Dai Fa Foster~2 1 Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Department of Electrical and Computer Engineering;Auburn University;Auburn;AL 36849-5201;USA
..............page:77-81
Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer
Ji Panfeng~+;Liu Naixin;Wei Tongbo;Liu Zhe; Lu Hongxi;Wang Junxi;and Li Jinmin Semiconductor Lighting R&D Center.Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
Ji Panfeng~+;Liu Naixin;Wei Tongbo;Liu Zhe; Lu Hongxi;Wang Junxi;and Li Jinmin Semiconductor Lighting R&D Center.Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China
..............page:65-68
High performance QVCO design with series coupling in CMOS technology
Cai Li~1;Huang Lu~;Ying Yutong~2;Fu Zhongqian~2; and Wang Weidong~1 1 Department of Electronics Engineering and Information Science;University of Science and Technology of China; Hefei 230027;China 2 Department of Electronic Science and Technology;University of Science and Technology of China;Hefei 230027;China
Cai Li~1;Huang Lu~;Ying Yutong~2;Fu Zhongqian~2; and Wang Weidong~1 1 Department of Electronics Engineering and Information Science;University of Science and Technology of China; Hefei 230027;China 2 Department of Electronic Science and Technology;University of Science and Technology of China;Hefei 230027;China
..............page:88-93
Novel SEU hardened PD SOI SRAM cell
Xie Chengmin~+;Wang Zhongfang;Wang Xihu; Wu Longsheng;and Liu Youbao Computer Research & Design Department;Xi’an Microelectronic Technique Institutes;Xi’an 710054;China
Xie Chengmin~+;Wang Zhongfang;Wang Xihu; Wu Longsheng;and Liu Youbao Computer Research & Design Department;Xi’an Microelectronic Technique Institutes;Xi’an 710054;China
..............page:162-166
Indium bump array fabrication on small CMOS circuit for flip-chip bonding
Huang Yuyang~;Zhang Yuxiang~1;Yin Zhizhen~1; Cui Guoxin~1;Liu H C~;Bian Lifeng~1; Yang Hui~1;and Zhang Yaohui~1 1 Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;Suzhou 215125;China 2 Institute for Microstructural Sciences.National Research Council;Ottawa K1A 0R6;Canada
Huang Yuyang~;Zhang Yuxiang~1;Yin Zhizhen~1; Cui Guoxin~1;Liu H C~;Bian Lifeng~1; Yang Hui~1;and Zhang Yaohui~1 1 Suzhou Institute of Nano-Tech and Nano-Bionics;Chinese Academy of Sciences;Suzhou 215125;China 2 Institute for Microstructural Sciences.National Research Council;Ottawa K1A 0R6;Canada
..............page:148-151
Effect of copper slurry on polishing characteristics
Hu Yi~+;Liu Yuling;Liu Xiaoyan;Wang Liran; and He Yangang Institute of Microelectronics;Hebei University of Technology;Tianjin 300130;China
Hu Yi~+;Liu Yuling;Liu Xiaoyan;Wang Liran; and He Yangang Institute of Microelectronics;Hebei University of Technology;Tianjin 300130;China
..............page:172-176
A digitally controlled PWM/PSM dual-mode DC/DC converter
Zhen Shaowei~+;Zhang Bo;Luo Ping;Hou Sijian; Ye Jingxin;and Ma Xiao State Key Laboratory of Electronic Thin Films and Integrated Devices.University of Electronic Science and Technology of China;Chengdu 610054;China
Zhen Shaowei~+;Zhang Bo;Luo Ping;Hou Sijian; Ye Jingxin;and Ma Xiao State Key Laboratory of Electronic Thin Films and Integrated Devices.University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:103-109
Analysis and optimization of current sensing circuit for deep sub-micron SRAM
Wang Yiqi;Zhao Fazhan;Liu Mengxin;L Yinxue; Zhao Bohua;and Han Zhensheng~+ Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
Wang Yiqi;Zhao Fazhan;Liu Mengxin;L Yinxue; Zhao Bohua;and Han Zhensheng~+ Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China
..............page:157-161
Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power
Moumita Mukherjee~;Pravash R.Tripathy~2;and S.P.Pati~ 1 Centre of Millimeter-Wave Semiconductor Devices and Systems;Institute of Radio Physics and Electronics; University of Calcutta;1;Girish Vidyaratna Lane;Kolkata 700009;West Bengal;India 2 Puroshottam Institute of Engineering & Technology;Rourkela;Odisha;India;Sambalpur University;India 3 AICTE Emeritus Professor;NIST;Pelur Hills;Berhampur;Odisha;India
Moumita Mukherjee~;Pravash R.Tripathy~2;and S.P.Pati~ 1 Centre of Millimeter-Wave Semiconductor Devices and Systems;Institute of Radio Physics and Electronics; University of Calcutta;1;Girish Vidyaratna Lane;Kolkata 700009;West Bengal;India 2 Puroshottam Institute of Engineering & Technology;Rourkela;Odisha;India;Sambalpur University;India 3 AICTE Emeritus Professor;NIST;Pelur Hills;Berhampur;Odisha;India
..............page:24-30
Raman analysis of epitaxial graphene on 6H-SiC(000) substrates under low pressure environment
Wang Dangchao~;Zhang Yuming~1;Zhang Yimen~1; Lei Tianmin~1;Guo Hui~1;Wang Yuehu~1; Tang Xiaoyan~1;and Wang Hang~1 1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University; Xi’an 710071;China 2 School of Physics and Electronic Engineering;Xianyang Normal College;Xianyang 712000;China
Wang Dangchao~;Zhang Yuming~1;Zhang Yimen~1; Lei Tianmin~1;Guo Hui~1;Wang Yuehu~1; Tang Xiaoyan~1;and Wang Hang~1 1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University; Xi’an 710071;China 2 School of Physics and Electronic Engineering;Xianyang Normal College;Xianyang 712000;China
..............page:39-42
Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells
Zhu Jun~1;Ban Shiliang~;and Ha Sihua~2 1 School of Physical Science and Technology.Inner Mongolia University;Hohhot 010021;China 2 Department of Physics.College of Sciences;Inner Mongolia University of Technology;Hohhot 010051;China
Zhu Jun~1;Ban Shiliang~;and Ha Sihua~2 1 School of Physical Science and Technology.Inner Mongolia University;Hohhot 010021;China 2 Department of Physics.College of Sciences;Inner Mongolia University of Technology;Hohhot 010051;China
..............page:9-13
Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure
Wang Yongshun~;Feng Jingjing~1;Liu Chunjuan~1; Wang Zaixing~1;Zhang Caizhen~1;and Chang Peng~2 1 School of Electronic and Information Engineering;Lanzhou Jiaotong University;Lanzhou 730070;China 2 School of Physical Science and Technology;Lanzhou University;Lanzhou 730000;China
Wang Yongshun~;Feng Jingjing~1;Liu Chunjuan~1; Wang Zaixing~1;Zhang Caizhen~1;and Chang Peng~2 1 School of Electronic and Information Engineering;Lanzhou Jiaotong University;Lanzhou 730070;China 2 School of Physical Science and Technology;Lanzhou University;Lanzhou 730000;China
..............page:60-64
LC voltage controlled oscillator in 0.18-μm RF CMOS
Li Wenyuan~+;Li Xian;and Wang Zhigong Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
Li Wenyuan~+;Li Xian;and Wang Zhigong Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
..............page:82-87
Design of 700 V triple RESURF nLDMOS with low on-resistance
Yin Shan~;Qiao Ming~1;Zhang Yongman~1;and Zhang Bo~1 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China 2 School of Electrical and Electronic Engineering;Nanyang Technological University;Singapore;639798;Singapore
Yin Shan~;Qiao Ming~1;Zhang Yongman~1;and Zhang Bo~1 1 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China 2 School of Electrical and Electronic Engineering;Nanyang Technological University;Singapore;639798;Singapore
..............page:47-50
A cryogenic SAR ADC for infrared readout circuits
Zhao Hongliang~;Zhao Yiqiang~1;and Zhang Zhisheng~1 1 School of Electronic Information Engineering;Tianjin University;Tianjin 30072;China 2 College of Physics;Liaoning University;Shenyang 110036;China
Zhao Hongliang~;Zhao Yiqiang~1;and Zhang Zhisheng~1 1 School of Electronic Information Engineering;Tianjin University;Tianjin 30072;China 2 College of Physics;Liaoning University;Shenyang 110036;China
..............page:152-156
Graph theory for FPGA minimum configurations
Ruan Aiwu~+;Li Wenchang;Xiang Chuanyin;Song Jiangmin; Kang Shi;and Liao Yongbo State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Ruan Aiwu~+;Li Wenchang;Xiang Chuanyin;Song Jiangmin; Kang Shi;and Liao Yongbo State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:167-171
A novel high voltage LIGBT with an n-region in p-substrate
Cheng Jianbing~;Zhang Bo~2;and Li Zhaoji~2 1 School of Electronic Science & Engineering;Nanjing University of Posts and Telecommunications;Nanjing 210003;China 2 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
Cheng Jianbing~;Zhang Bo~2;and Li Zhaoji~2 1 School of Electronic Science & Engineering;Nanjing University of Posts and Telecommunications;Nanjing 210003;China 2 State Key Laboratory of Electronic Thin Films and Integrated Devices;University of Electronic Science and Technology of China;Chengdu 610054;China
..............page:51-54
A 10-bit 100-MS/s CMOS pipelined folding A/D converter
Li Xiaojuan~+;Yang Yintang;and Zhu Zhangming School of Microelectronics;Xidian University;Xi’an 710071;China
Li Xiaojuan~+;Yang Yintang;and Zhu Zhangming School of Microelectronics;Xidian University;Xi’an 710071;China
..............page:110-116
AlGaAs/GaAs tunnel junctions in a 4-J tandem solar cell
L Siyu~+ and Qu Xiaosheng~+ School of Electronic and Information Engineering;Beihang University;Beijing 100191;China
L Siyu~+ and Qu Xiaosheng~+ School of Electronic and Information Engineering;Beihang University;Beijing 100191;China
..............page:14-17
Effect of deposition conditions on the physical properties of Sn_xS_y thin films prepared by the spray pyrolysis technique
M.R.Fadavieslam~;N.Shahtahmasebi~1;M.Rezaee-Roknabadi~1; and M.M.Bagheri-Mohagheghi~2 1 Nanotechnology Research Center;Department of Physics;Faculty of Basic Sciences;Ferdowsi University of Mashhad; Mashhad;Iran 2 School of Physics;Damghan University.Damghan;Iran
M.R.Fadavieslam~;N.Shahtahmasebi~1;M.Rezaee-Roknabadi~1; and M.M.Bagheri-Mohagheghi~2 1 Nanotechnology Research Center;Department of Physics;Faculty of Basic Sciences;Ferdowsi University of Mashhad; Mashhad;Iran 2 School of Physics;Damghan University.Damghan;Iran
..............page:31-38
A passive UHF RFID tag chip with a dual-resolution temperature sensor in a 0.18μm standard CMOS process
Feng Peng;Zhang Qi;and Wu Nanjian~+ State Key Laboratory tor Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
Feng Peng;Zhang Qi;and Wu Nanjian~+ State Key Laboratory tor Superlattices and Microstructures;Institute of Semiconductors;Chinese Academy of Sciences; Beijing 100083;China
..............page:139-147
Noise in a CMOS digital pixel sensor
Zhang Chi;Yao Suying;and Xu Jiangtao~+ School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
Zhang Chi;Yao Suying;and Xu Jiangtao~+ School of Electronic Information Engineering;Tianjin University;Tianjin 300072;China
..............page:94-98
Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
Li Zhicong~;Li Panpan~1;Wang Bing~1;Li Hongjian~1; Liang Meng~1;Yao Ran~1;Li Jing~1;Deng Yuanming~2; Yi Xiaoyan~1;Wang Guohong~1;and Li Jinmin~1 1 Semiconductor Lighting R&D Center;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Yangzhou Zhongke Semiconductor Lighting Company;Yangzhou 225009;China
Li Zhicong~;Li Panpan~1;Wang Bing~1;Li Hongjian~1; Liang Meng~1;Yao Ran~1;Li Jing~1;Deng Yuanming~2; Yi Xiaoyan~1;Wang Guohong~1;and Li Jinmin~1 1 Semiconductor Lighting R&D Center;Institute of Semiconductors;Chinese Academy of Sciences;Beijing 100083;China 2 Yangzhou Zhongke Semiconductor Lighting Company;Yangzhou 225009;China
..............page:69-71
GIDL current degradation in LDD nMOSFET under hot hole stress
Chen Haifeng~;Ma Xiaohua~2;Guo Lixin~1;and Du Huimin~1 1 School of Electronic Engineering;Xi’an University of Posts and Telecommunications.Xi’an 710121;China 2 School of Technical Physics;Xidian University;Xi’an 710071;China
Chen Haifeng~;Ma Xiaohua~2;Guo Lixin~1;and Du Huimin~1 1 School of Electronic Engineering;Xi’an University of Posts and Telecommunications.Xi’an 710121;China 2 School of Technical Physics;Xidian University;Xi’an 710071;China
..............page:43-46
SOI-based radial-contour-mode micromechanical disk resonator
Jia Yingqian~;Zhao Zhengping~;Yang Yongjun~3; Hu Xiaodong~3;and Li Qian~3 1 School of Information Engineering;Hebei University of Technology;Tianjin 300130;China 2 China Electronics Technology Group Corporation;Beijing 100846;China 3 The 13th Research Institute;China Electronics Technology Group Corporation;Shijiazhuang 050051;China
Jia Yingqian~;Zhao Zhengping~;Yang Yongjun~3; Hu Xiaodong~3;and Li Qian~3 1 School of Information Engineering;Hebei University of Technology;Tianjin 300130;China 2 China Electronics Technology Group Corporation;Beijing 100846;China 3 The 13th Research Institute;China Electronics Technology Group Corporation;Shijiazhuang 050051;China
..............page:72-76
Analytical model for the dispersion of sub-threshold current in organic thin-film transistors
Chen Yingping~1;Shang Liwei~1;Ji Zhuoyu~1;Wang Hong~; Han Maixing~1;Liu Xin~1;and Liu Ming~ 1 Laboratory of Nano-Fabrication and Novel Devices Integrated Technology;Institute of Microelectronics; Chinese Academy of Sciences;Beijing 100029;China 2 Institute of Microelectronics;School of Physical Science and Technology;Lanzhou University;Lanzhou 730000;China
Chen Yingping~1;Shang Liwei~1;Ji Zhuoyu~1;Wang Hong~; Han Maixing~1;Liu Xin~1;and Liu Ming~ 1 Laboratory of Nano-Fabrication and Novel Devices Integrated Technology;Institute of Microelectronics; Chinese Academy of Sciences;Beijing 100029;China 2 Institute of Microelectronics;School of Physical Science and Technology;Lanzhou University;Lanzhou 730000;China
..............page:55-59
As2S8 planar waveguide:refractive index changes following an annealing and irradiation and annealing cycle,and light propagation features
Zou Liner~;Wang Gouri~1;Shen Yun~1;Chen Baoxue~2; and Mamoru Iso~3 1 Department of Physics;Nanchang University;Nanchang 330031;China 2 School of Optical-Electrical and Computer Engineering;University of Shanghai for Science and Technology; Shanghai 200093;China 3 Department of Chemical Engineering;Tokyo University of Agriculture and Technology;Tokyo 184-8588;Japan
Zou Liner~;Wang Gouri~1;Shen Yun~1;Chen Baoxue~2; and Mamoru Iso~3 1 Department of Physics;Nanchang University;Nanchang 330031;China 2 School of Optical-Electrical and Computer Engineering;University of Shanghai for Science and Technology; Shanghai 200093;China 3 Department of Chemical Engineering;Tokyo University of Agriculture and Technology;Tokyo 184-8588;Japan
..............page:18-23
An 8-18 GHz broadband high power amplifier
Wang Lifa~;Yang Ruixia~;Wu Jingfeng~2; and Li Yanlei~ 1 College of Information Engineering;Hebei University of Technology;Tianjin 300130;China 2 Hebei Semiconductor Research Institute.Shijiazhuang 050051;China
Wang Lifa~;Yang Ruixia~;Wu Jingfeng~2; and Li Yanlei~ 1 College of Information Engineering;Hebei University of Technology;Tianjin 300130;China 2 Hebei Semiconductor Research Institute.Shijiazhuang 050051;China
..............page:99-102
A 200 mA CMOS low-dropout regulator with double frequency compensation techniques for SoC applications
Lei Qianqian~;Chen Zhiming~1;Gong Zheng~2;and Shi Yin~2 1 Department of Electronic Engineering;Xi’an University of Technology;Xi’an 710048;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China
Lei Qianqian~;Chen Zhiming~1;Gong Zheng~2;and Shi Yin~2 1 Department of Electronic Engineering;Xi’an University of Technology;Xi’an 710048;China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center;Suzhou 215021;China
..............page:117-121
Local charge neutrality condition,Fermi level and majority carrier density of a semiconductor with multiple localized multi-level intrinsic/impurity defects
Ken K.Chin~ 1 Department of Physics and Apollo CdTe Solar Energy Research Center;New Jersey Institute of Technology;Newark; NJ 07058;USA 2 Department of Photonic and Information Engineering;School of Electronic and Information Engineering;Beihang University; Beijing 100191;China
Ken K.Chin~ 1 Department of Physics and Apollo CdTe Solar Energy Research Center;New Jersey Institute of Technology;Newark; NJ 07058;USA 2 Department of Photonic and Information Engineering;School of Electronic and Information Engineering;Beihang University; Beijing 100191;China
..............page:1-8
A 140 mV 0.8μA CMOS voltage reference based on sub-threshold MOSFETs
Yang Miao~+;Sun Weifeng;Xu Shen;Wang Yifeng; and Lu Shengli National ASIC System Engineering Research Center;Southeast University;Nanjing 210096;China
Yang Miao~+;Sun Weifeng;Xu Shen;Wang Yifeng; and Lu Shengli National ASIC System Engineering Research Center;Southeast University;Nanjing 210096;China
..............page:127-131
A novel model for a planar wideband Marchand balun
Xu Leijun~;Wang Zhigong~2;and Li Qin~2 1 School of Electrical and Information Engineering;Jiangsu University;Zhenjiang 212013;China 2 Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
Xu Leijun~;Wang Zhigong~2;and Li Qin~2 1 School of Electrical and Information Engineering;Jiangsu University;Zhenjiang 212013;China 2 Institute of RF- & OE-ICs;Southeast University;Nanjing 210096;China
..............page:122-126
A low reference spur quadrature phase-locked loop for UWB systems
Fu Haipeng~1;Cai Deyun~1;Ren Junyan~;Li Wei~; and Li Ning~1 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Micro-/Nano-Electronics Science and Technology Innovation Platform;Fudan University;Shanghai 201203;China
Fu Haipeng~1;Cai Deyun~1;Ren Junyan~;Li Wei~; and Li Ning~1 1 State Key Laboratory of ASIC & System;Fudan University;Shanghai 201203;China 2 Micro-/Nano-Electronics Science and Technology Innovation Platform;Fudan University;Shanghai 201203;China
..............page:132-138