Chinese Journal of Semiconductors 2010 Issue 9 In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser

In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser
Wen Feng Huang Lirong Jiang Bo Tong Liangzhu Xu Wei and Liu Deming

..............page:53-58

Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAs InP-based HEMT
Huang Jie Guo Tianyi Zhang Haiying Xu Jingbo Fu Xiaojun Yang Hao and Niu Jiebin

..............page:45-48

Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes
Ji Xiaoli Yang Fuhua Wang Junxi Duan Ruifei Ding Kai Zeng Yiping Wang Guohong and Li Jinmin

..............page:49-52

A 6-9 GHz ultra-wideband CMOS PA for China’s ultra-wideband standard
Gao Zhendong Li Zhiqiang and Zhang Haiying

..............page:104-107

A novel high voltage start up circuit for an integrated switched mode power supply
Hu Hao and Chen Xingbi

..............page:64-67

A dual-band frequency synthesizer for CMMB application with low phase noise
Yu Peng Yan Jun Shi Yin Dai Fa Foster

..............page:68-73

Soft error generation analysis in combinational logic circuits
Ding Qian Wang Yu Luo Rong Wang Hui and Yang Huazhong

..............page:141-146

Design and verification of a 10-bit 1.2-V 100-MSPS D/A IP core based on a 0.13-μm low power CMOS process
Xu Bulu Shao Bowen Lin Xia Yi Wei and Liu Yun

..............page:99-103

A 10-bit 100-Msps low power time-interleaved ADC using OTA sharing
Xu Lai Yin Xiumei and Yang Huazhong

..............page:123-128

Sigma-delta modulator modeling analysis and design
Ge Binjie Wang Xin’an Zhang Xing Feng Xiaoxing and Wang Qingqin

..............page:79-83

Two-dimensional pixel image lag simulation and optimization in a 4-T CMOS image sensor
Yu Junting Li Binqiao Yu Pingping Xu Jiangtao and Mou Cun

..............page:59-63

A reconfigurable OTA-C baseband filter with wide digital tuning for GNSS receivers
Pan Wenguang Ma Chengyan Gan Yebing and Ye Tianchun

..............page:94-98

A 1.25 Gb/s laser diode driver with pulse width optimization
Wang Huan Wang Zhigong Xu Jian Wang Rong Miao Peng and Luo Yin

..............page:84-87

A low power automatic gain control loop for a receiver
Li Guofeng Geng Zhiqing and Wu Nanjian

..............page:108-112

A 2-GS/s 6-bit self-calibrated flash ADC
Zhang Youtao Li Xiaopeng Zhang Min Liu Ao and Chen Chen

..............page:129-133

A Ga-doped ZnO transparent conduct layer for GaN-based LEDs
Liu Zhen Wang Xiaofeng Yang Hua Duan Yao and Zeng Yiping

..............page:17-20

Numerical study of the sub-threshold slope in T-CNFETs
Zhou Hailiang Hao Yue and Zhang Minxuan

..............page:32-36

Analytical charge control model for AlGaN/GaN MIS-HFETs including an undepleted barrier layer
Lu Shenghui Du Jiangfeng Luo Qian Yu Qi Zhou Wei Xia Jianxin and Yang Mohua

..............page:25-31

Phonon-induced magnetoresistance oscillations in a high-mobility quantum well
Zhou Qisheng Cao Juncheng Qi Ming and Lei Xiaolin

..............page:1-4

Frequency of the transition spectral line of an electron in quantum rods
Wang Guiwen and Xiao Jinglin

..............page:5-9

Deep submicron PDSOI thermal resistance extraction
Bu Jianhui Bi Jinshun Xi Linmao and Han Zhengsheng

..............page:14-16

Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices
Zhang Shifeng Ding Koubao Han Yan Han Chenggong Hu Jiaxian and Zhang Bin

..............page:37-40

A 1.2-V 19.2-mW 10-bit 30-MS/s pipelined ADC in 0.13-μm CMOS
Zhang Zhang Yuan Yudan Guo Yawei Cheng Xu and Zeng Xiaoyang

..............page:134-140

A high precision high PSRR bandgap reference with thermal hysteresis protection
Yang Yintang Li Yani and Zhu Zhangming

..............page:113-117

A 3-5 GHz BPSK transmitter for IR-UWB in 0.18μm CMOS
Fu Delong Huang Lu Cai Li and Lin Fujiang

..............page:88-93

Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology
Xu Yue Yan Feng Li Zhiguo Yang Fan Wang Yonggang and Chang Jianguang Corporation;Shanghai 201203;China)

..............page:21-24

Epitaxial growth of ZnO on GaN/sapphire substrate by radio-frequency magnetron sputtering
Yang Xiaoli Chen Nuofu Yin Zhigang Zhang Xingwang Li Yang You Jingbi Wang Yu Dong Jingjing Cui Min Gao Yun Huang Tianmao Chen Xiaofeng and Wang Yanshuo

..............page:10-13

Ultra high-speed InP/InGaAs SHBTs with f_t and f_max of 185 GHz
Zhou Lei Jin Zhi Su Yongbo Wang Xiantai Chang Hudong Xu Anhuai and Qi Ming

..............page:41-44

An 8-bit 180-kS/s differential SAR ADC with a time-domain comparator and 7.97-ENOB
Fan Hua Wei Qi Kobenge Sekedi Bomeh;Yin Xiumei and Yang Huazhong

..............page:118-122

A 0.5-1.7 GHz low phase noise ring-oscillator-based PLL for mixed-signal SoCs
Jiao Yishu Zhou Yumei Jiang Jianhua and Wu Bin

..............page:74-78